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Top 10 Hotels in Ascoli Piceno, Italy | Hotels.comEnglish (United States)Book online or call 800-246-8357This call is free. 24 hours a day; 7 days a week.Hotel DealsPackages & FlightsGroup BookingsGift CardsHelpWebsite feedbackSign in & AccountSign inCreate an accountYour bookingsTrip PlannerReview a hotelHotels.com® RewardsYour bookings18 properties in Ascoli PicenoEnter your datesHotelsHotels in ItalyAscoli Piceno HotelsHotels in Ascoli Piceno, ItalySearch & Compare Ascoli Piceno HotelsCity, landmark, hotel name, address or zip codeCheck inCheck out Rooms123456789+Room 1:Adults12345678Aged 18+Children01230-17Age at check in:Child 1:-?-<11234567891011121314151617Show dealsGet Secret Prices on select hotelsThese prices aren’t available to everyone.Unlock nowRecently bookedOfficina del Solefrom $220Residenza Scorcio sul marefrom $82B&B In Centrofrom $72Smeraldo Suites & Spa4 starsfrom $163Pay now or later on most roomsFree cancellation on most roomsPrice GuaranteeMap of Ascoli Piceno hotelsBest hotels in Ascoli PicenoWith hotels.com we help you find the best hotels in Ascoli Piceno, Italy.
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Ibrahim M. Elhassan - Semantic Scholar
Ibrahim M. Elhassan
Thor G Theander34
Lars Hviid28
Haider A Giha23
David E. Arnot23
Gwiria M H Satti18
42Thor G. Theander
38Lars Hviid
33David E. Arnot
30David R. Cavanagh
23Bartholomew Dicky Akanmori
David R. Cavanagh, Ibrahim M. Elhassan, +7 authors Jana S. McBride
Merozoite surface protein-1 (MSP-1) of Plasmodium falciparum is a malaria vaccine candidate Ag. Immunity to MSP-1 has been implicated in protection against infection in animal models. However, MSP-1… (More)
Chloroquine-resistant Plasmodium vivax malaria in Debre Zeit, Ethiopia
Hiwot Teka, Beyene Petros, +6 authors Howard Engers
Plasmodium vivax accounts for about 40% of all malaria infection in Ethiopia. Chloroquine (CQ) is the first line treatment for confirmed P. vivax malaria in the country. The first report of CQ… (More)
The natural history of Sudanese post-kala-azar dermal leishmaniasis: clinical, immunological and prognostic features.
A. M. Musa, Eltahir Awad Gasim Khalil, +5 authors Ahmed Mohammed El Hassan
In an exploration of the natural history of post-kala-azar dermal leishmaniasis (PKDL), 134 residents of Sudan who had recently been diagnosed as cases of the disease were investigated. In each case,… (More)
Dichotomy of protective cellular immune responses to human visceral leishmaniasis.
Eltahir Awad Gasim Khalil, Noureddine Ben Ayed, +10 authors Ahmed Mohamed Elhassan
Healing/protective responses in human visceral leishmaniasis (VL) are associated with stimulation/production of Th1 cytokines, such as interferon IFN-gamma, and conversion in the leishmanin skin test… (More)
David R. Cavanagh, Carlota Dobaño, +7 authors Jana S. McBride
Comparisons of immunoglobulin G (IgG) subclass responses to the major polymorphic region and to a conserved region of MSP-1 in three cohorts of African villagers exposed to Plasmodium falciparum… (More)
Peter N. Fonjungo, Ibrahim M. Elhassan, +5 authors Jana S. McBride
Rhoptry-associated protein 1 (RAP1) of Plasmodium falciparum is a nonpolymorphic merozoite antigen that is considered a potential candidate for a malaria vaccine against asexual blood stages. In this… (More)
Ibrahim M. Elhassan, Lars Hviid, +4 authors Thor G. Theander
To explain the observation that acute Plasmodium falciparum malaria is associated with a transient inability of peripheral blood cells to respond to antigenic stimulation in vitro, we have postulated… (More)
Cally Roper, Ibrahim M. Elhassan, +6 authors David E. Arnot
We have used the nested polymerase chain reaction (PCR) to assay for low level Plasmodium falciparum infections that were below the threshold of detection of blood film examination. This revealed a… (More)
Lars Hviid, Thor G. Theander, Ibrahim M. Elhassan, James E. Jensen
Acute P. falciparum malaria is associated with a loss of antigen-responsiveness of peripheral T cells, depletion of T cells characterized by high surface expression of the adhesion molecule LFA-1,… (More)
Pattern of malaria transmission along the Rahad River basin, Eastern Sudan
Yousif El Safi Himeidan, Mervet M Elzaki, Eliningaya J Kweka, Muntasir Eltayeb Ibrahim, Ibrahim M. Elhassan
Understanding malaria vector mosquitoes and their infectivity dynamics is of importance in setting up intervention and control programmes. Patterns of malaria transmission have been shown to differ… (More)

type: global

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text:
Carol L Winter - Semantic Scholar
Namal C Warshakoon2
Shengde Wu2
Artem G Evdokimov2
Matthew Pokross2
Sean Renock2
10Natalya Smirnova
10Irina Gazaryan
10Dmitry Hushpulian
10Rajiv Ratan
Niketa C Shah, J. Ted Gerstle, Mary Stuart, Carol L Winter, Alberto S. Pappo
BACKGROUND Melanoma comprises less than 3% of all cancers seen in children. Sentinel lymph node biopsy (SLNBX) is an important predictor of outcome in adult melanoma and has not been widely used in… (More)
[Anesthesia in the aged].
Annick Steib, V P Balabaud, Carol L Winter, P Plobner, J. P. Dupeyron
The molecular basis of insulin resistance, a major risk factor for development of Type II diabetes, involves defective insulin signaling. Insulin-mediated signal transduction is negatively regulated… (More)


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Elevated amniotic fluid C-reactive protein at the time of genetic amniocentesis is a marker for preterm delivery. - PubMed - NCBI
Format: AbstractFormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListApplySend toChoose DestinationFileClipboardCollectionsE-mailOrderMy BibliographyCitation managerFormatSummary (text)Abstract (text)MEDLINEXMLPMID ListCSVCreate File1 selected item: 11854648FormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListMeSH and Other DataE-mailSubjectAdditional textE-mailDidn't get the message? Find out why...Add to ClipboardAdd to CollectionsOrder articlesAdd to My BibliographyGenerate a file for use with external citation management software.Create File
See comment in PubMed Commons belowAm J Obstet Gynecol. 2002 Feb;186(2):268-73.Elevated amniotic fluid C-reactive protein at the time of genetic amniocentesis is a marker for preterm delivery.Ghezzi F1, Franchi M, Raio L, Di Naro E, Bossi G, D'Eril GV, Bolis P.Author information1Department of Obstetrics and Gynecology, University of Insubria, Circolo Hospital, Varese, Italy. Fabio.ghezzi@uinsubria.itAbstractOBJECTIVE: A pre-existing intrauterine inflammation in the first half of gestation has been proposed as a possible condition that leads to preterm delivery. Indeed, elevated levels of inflammatory mediators (eg, interleukin-6, tumor necrosis factor) in midtrimester amniotic fluid have been found in cases of preterm delivery and/or spontaneous abortion. The objective of this study was to investigate whether the amniotic fluid C-reactive protein level at the time of genetic amniocentesis is a marker for spontaneous preterm delivery before 34 and 37 weeks of gestation.STUDY DESIGN: Women who underwent genetic amniocentesis between 15 and 18 weeks of gestation with (1) singleton gestation, (2) uneventful pregnancy course before the amniocentesis, and (3) absence of fetal abnormalities were included in the study. Patients with abnormal karyotype were excluded. C-reactive protein concentration was measured in amniotic fluid and in maternal blood immediately after genetic amniocentesis. All patients were followed until delivery for the occurrence of pregnancy complications. Nonparametric tests and receiver-operating characteristic curve analysis were used for statistical purposes.RESULTS: The prevalence of spontaneous preterm delivery before 34 and 37 weeks was 3.3% (10 of 306 pregnancies) and 8.5% (26 of 306 pregnancies), respectively. Women with preterm delivery at <37 weeks had a higher median (range) of amniotic fluid C-reactive protein concentration than those women who delivered at term (median, 113.3 ng/mL [range, 16-623 ng/mL] vs median, 57.8 ng/mL [range, 0-808.9 ng/mL]; P <.005). Women with preterm delivery at <34 weeks had a higher median (range) amniotic fluid C-reactive protein concentration than those women who delivered at term (median, 183.8 ng/mL [range, 46.5-447 ng/mL] vs median, 57.8 ng/mL [range, 0-808.9 ng/mL]; P <.005]. No correlation was found between amniotic fluid C-reactive protein and maternal blood C-reactive protein concentrations. No relationship was found between maternal blood C-reactive protein concentration and preterm delivery before either 34 or 37 weeks. Amniotic fluid C-reactive protein concentration of >110 ng/mL had a sensitivity of 80.8% and a specificity of 69.5% in the prediction of spontaneous preterm delivery at <34 weeks.CONCLUSION: This study supports the theory that a subclinical intrauterine/fetal inflammatory process early in gestation may be important for the occurrence of preterm delivery in the second half of gestation.PMID: 11854648 [PubMed - indexed for MEDLINE] ShareMeSH Terms, SubstancesMeSH TermsAdultAmniocentesis*Amniotic Fluid/metabolism*BiomarkersC-Reactive Protein/metabolism*FemaleGestational AgeHumansObstetric Labor, Premature*/epidemiologyPregnancyPregnancy Trimester, ThirdPrevalenceSensitivity and SpecificitySubstancesBiomarkersC-Reactive ProteinLinkOut - more resourcesFull Text SourcesElsevier ScienceOvid Technologies, Inc.MedicalPreterm Labor - MedlinePlus Health InformationMiscellaneousNCI CPTC Antibody Characterization ProgramPubMed Commons home

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Sign Up	Nichole Loiacono DesignInterior Designers & Decorators	Email	Save to Ideabook871Ask a QuestionPrint	Nichole Loiacono
Photo c/o Nichole Loiacono	URL
Vanessa Brunner added this to DIY: Fluffy White Paper LanternThese standard paper lanterns can be found at many home goods stores — from Cost Plus World Market to Pier 1. Any size can be purchased, depending on the type of effect you're going for. Loiacono purchased an extra-large 38" diameter paper lantern, which took over 1200 coffee filters to cover completely. The lantern was about $30 and the coffee filters $10, putting the total cost just a little over $40. What Houzzers are commenting on:
meeshelle62 added this to DecorNovember 27, 2014coffee filters added to a paper lanternhooochiema added this to hooochie'sNovember 10, 2014huge lampcatzbeadz added this to BEST CREATIVE IDEASOctober 27, 2014Coffee filters! That's right, Loiacono bought a huge stack of coffee filters, and using her hot glue gun, she crumpled them up and placed them very closely together on the paper lantern. As she went along, she realized that it was less about how crumpled the pieces were, and more about how close she put them together on the lantern. takes abt 1500 for a large lanternmiacorradi added this to Mia hus!October 5, 2014Make it with coffee filters and hot glue gunnafnafnaf added this to lightApril 21, 2014These standard paper lanterns can be found at many home goods stores — from Cost Plus World Market to Pier 1. Any size can be purchased, depending on the type of effect you're going for. Loiacono purchased an extra-large 38" diameter paper lantern, which took over 1200 coffee filters to cover completely. The lantern was about $30 and the coffee filters $10, putting the total cost just a little over $40.kstrong added this to comfy room curved sofaFebruary 16, 2014crumpled coffee filters on paper lanternMélissa Costanzo added this to Home Office IdeasOctober 30, 2013filter coffee lampkrismontgomery added this to chloes bedroomOctober 28, 2013Coffee filtersbbdaisy added this to bbdaisy's IdeasOctober 24, 2013It is elegant!Marissa Lee added this to marissa_lee's IdeasOctober 24, 2013Lantern love the idea of the coffee filtersharrirusch added this to DIY TipsSeptember 29, 2013Coffee filter lanterndesp666 added this to desp666's ideasSeptember 28, 2013Brits showerkarenkelly1 added this to karenkelly1's ideasSeptember 23, 2013Coffee papers glues on lamp shadeereiner1 added this to ereiner1's IdeasSeptember 13, 2013Coffee filter light - how cool!terriuskim added this to terriuskim's IdeasSeptember 4, 2013Coffee filters hot glued on paper lanternidealady added this to idealady's ideasAugust 25, 2013Love this, and will be doing it over my bedEdi He added this to edi_he's IdeasAugust 16, 2013Cooljuancazares added this to juancazares's IdeasAugust 10, 2013CoolSally Renfro added this to sallyrenfro's ideasAugust 6, 2013oooh!anitamota added this to crafting ideasJuly 28, 2013lamp shadebohemianlil added this to LightingJuly 26, 2013lanterncrystal_joy added this to crystal_joy's ideasJuly 20, 2013better than pompom?paulinedickes added this to paulinedickes's ideasJune 28, 2013Coffee filterlethjo added this to yoyojoJune 19, 2013So simple to do....adaizy added this to DIY ideasMay 20, 2013Lantern0927fouss added this to Party ideasMay 19, 2013Coffee filters on Pom pomBobbi Otto Hills added this to webuser_75853's IdeasApril 29, 2013Coffee filter lanternagapanthus1 added this to Living Room IdeasApril 20, 2013Light made out of coffee filtersmkamelia9 added this to mkamelia9's ideasMarch 24, 2013Love it!!!!!!Deborah Haggett added this to deborah_haggett's IdeasMarch 14, 2013great look easy diyalle293 added this to alle293's ideasMarch 6, 2013Paper decor' lightLeslie Galligan added this to leslie_galligan's ideasMarch 4, 2013great idea! wedding?neringag added this to rankdarbiaiFebruary 12, 2013laternaBrandy Smith added this to decorating ideasFebruary 6, 2013made with coffee filterssimba716 added this to simba716's IdeasJanuary 30, 2013WeddingKimberly Lynch added this to kimberly_lynch983's IdeasJanuary 19, 2013Whimsical lightingmallorizzle added this to mallorizzle's ideasDecember 26, 2012Very creative and decorative, on a budget!kashihy added this to kashihy's ideasDecember 21, 2012lamp paper decoreCloud9 Smarthome added this to craftsOctober 11, 2012So simple and the outcome is stunning!nokweth added this to life's goodOctober 11, 2012White Paper Lanternelsamary added this to elsamary's ideasSeptember 30, 2012Lámparas coffee filteranikaboni added this to DIYSeptember 26, 2012Coffee Filter Lanternlegacystudios added this to legacystudios's IdeasSeptember 26, 2012Light fixturececidsr added this to cecidsr's IdeasSeptember 14, 2012Coffe filter on chinese lpaper lampLinda White added this to Make - Lamps/ChandeliersAugust 19, 2012paper covered lanternvictoria710 added this to victoria710's ideasAugust 17, 2012Peony-like chandelierenfantterrible added this to Living roomAugust 2, 2012Great DIY idea!avril2012 added this to BedroomJuly 28, 2012Way coolnewtonleung added this to newtonleung's FavoritesJuly 22, 2012Lantern made of coffee filtres and hot glue gun
vibri added this to vibri's ideasJuly 19, 2012Lampe papier customisée avec filtres à café !aliciadc added this to aliciadc's IdeasJune 20, 2012Lampara filtros cafejlb731 added this to Jess favsJune 12, 2012DIY light shade oddre added this to LightingJune 8, 2012Large globe931winki added this to 931winki's FavoritesMay 27, 2012DIy coffee filter lanternNatalie added this to DIY ideasMay 27, 2012Paper lanterzilivili added this to my favApril 11, 2012:) living roomrelefordcd added this to relefordcd's FavoritesApril 4, 2012beautiful simplicity ivete added this to Nova Vida!March 28, 2012Filtro de café!mizshanky added this to mizshanky's FavoritesMarch 25, 2012Coffee filtervirgingenie added this to virgingenie's FavoritesMarch 22, 2012idea
nmathis added this to nmathis's ideasMarch 21, 2012Love this!Natalie added this to kids' room ideasMarch 20, 2012use paper lantern and hot-glue coffee filters for the texture!
sun in kids' rm?ashley2415 added this to ashley2415's FavoritesMarch 15, 2012Coffee filterssaevans added this to saevans's ideasMarch 15, 2012jadeperlesta added this to perlesta's FavoritesMarch 6, 2012So cool! carriefetterolf added this to carriefetterolf's FavoritesMarch 5, 2012Paper lanternwilm23sth added this to wilm23sth's FavoritesFebruary 24, 2012Use coffee filters and get a big lantern and glue them all in (1200) coffee thingswinterspinach added this to winterspinach's FavoritesFebruary 8, 2012Texture, taking it to the next level creativelydannisha added this to dannisha's ideasJanuary 31, 2012DIY coffee filter lantern. I would "coffee" stain them to make the a cream/brown color!jessica gluck added this to atlgluck's ideasJanuary 30, 2012an extra-large 38" diameter paper lantern, which took over 1200 coffee filters to cover completely. The lantern was about $30 and the coffee filters $10, putting the total cost just a little over $40. aliciamaria added this to aliciamaria's ideasJanuary 25, 2012ideastuegelart added this to craft paper projectsJanuary 25, 2012These standard paper lanterns can be found at many home goods stores — from Cost Plus World Market to Pier 1. Any size can be purchased, depending on the type of effect you're going for. Loiacono purchased an extra-large 38" diameter paper lantern, which took over 1200 coffee filters to cover completely. The lantern was about $30 and the coffee filters $10, putting the total cost just a little over $40. lynnalc added this to lynnalc's ideasJanuary 25, 2012pompom chinese lantern DIY coolctwalk_lala added this to ctwalk_lala's ideasJanuary 24, 2012cool idea for a wedding
aosorio added this to aosorio's FavoritesJanuary 17, 2012Coffee flitersawee001 added this to DIYJanuary 12, 2012coffee filters for a fluffly light bulb!angiebennett added this to angiebennett's ideasJanuary 11, 2012Lamp for dining room Or living room.sydgee added this to sydgee's FavoritesJanuary 9, 2012I want it!!!!!!nands added this to nands's FavoritesJanuary 7, 2012Coffee filter lampiloveyanni added this to iloveyanni's FavoritesJanuary 2, 2012Coffee filter paper lanternblovse added this to decorationDecember 26, 2011Lamp made with cofee filters
hsiler added this to hsiler's FavoritesDecember 26, 2011Wedding!!eviero added this to Sam's roomDecember 10, 2011This would make a beautiful light fixture!
keremelkitten added this to keremelkitten's FavoritesDecember 5, 2011Coffee filtershanan101 added this to hanan101's FavoritesDecember 2, 2011Coffee filtershesmith14 added this to hesmith14's ideasDecember 1, 2011coffee filter lightskimberlybeenc added this to kimberlybeenc's FavoritesNovember 30, 2011Lanternflott home design added this to hajdugabi's ideasNovember 30, 2011ideanonna1954 added this to diyNovember 22, 2011Coffee filterssahar_nt added this to sahar's otherNovember 13, 2011Using coffee filters
38" paper lantern, and 1200 coffee filterskurthiggins added this to kurthiggins's FavoritesNovember 7, 2011Light. Coffee filters. Diyklund4149 added this to klund4149's FavoritesNovember 6, 2011Coffee filtersGloria Mills added this to Sewing/Craft projectsNovember 6, 2011Coffee Filter globechelsea_eason added this to chelsea_eason's FavoritesNovember 3, 2011Easy! minkus84 added this to minkus84's ideasNovember 2, 2011http://www.houzz.com/ideabooks/827640?utm_source=Houzz&utm_campaign=updates&utm_medium=email&utm_content=gallery5&d=0&w=93764crum added this to projectsNovember 2, 201138" dia paper lantern 1200 coffee filters= $40.ryandell added this to ryandell's ideasNovember 2, 2011Coffee filter lightcottagedream added this to cottagedream's ideasNovember 1, 2011Lamp how tokkmac531 added this to things to make and sellNovember 1, 2011find these lanterns anywhere... pier one, cost plus world market...deboso added this to deboso's ideasOctober 31, 2011Crafty! Lantern & coffee filters
mmckimm added this to San ClementeOctober 31, 2011dining roomdoreenam added this to doreenam's ideasOctober 31, 2011DirectionsRemy Stressenger added this to remycc's ideasOctober 31, 2011How to - light fixturegise1919 added this to gise1919's ideasOctober 30, 2011cofee filters 1200cocoonproperties added this to cocoonproperties's ideasOctober 30, 20111200 coffee filters on 38" lanternchughes1974 added this to 2766 ideasOctober 30, 2011Light fixture made from hot glue gun and coffee filters. Lantern can be found at Cost Plus World Market.moimoimemeetje added this to moimoimemeetje's FavoritesOctober 30, 2011peut etre a faire mais un peu plus petit vchalliwell added this to vchalliwell's ideasOctober 30, 2011lanternLoretta Champagne added this to mrschampagne1's ideasOctober 30, 2011How Easy!C.W.Pottery added this to cwpottery's ideasOctober 30, 2011light fixturebabcisue added this to babcisue's ideasOctober 30, 2011cool ideaTiffany Mueller added this to tiffanymueller's ideasOctober 30, 2011Coffee filters on paper lantern. Hot glue close together.donnae added this to donnae's ideasOctober 30, 2011these are coffee filters placed very closely together so its not necessarily about how you scrunch them its about their closeness tigerlina added this to tigerlina's FavoritesOctober 29, 2011paper lampcarwinbruin added this to carwinbruin's FavoritesOctober 27, 2011DIYmusubihouse added this to Artistic InspirationsOctober 27, 2011Paper lanternskamaria added this to kamaria's FavoritesOctober 26, 2011You can create this by putting many coffee filters on a per lantern (keep them close together)Regina added this to great ideas to attempt at home ;)October 26, 2011LOVE IT!!! :)amaya_tiuri added this to amaya_tiuri's FavoritesOctober 26, 2011Lamp from coffee filters Browse over 5 million home design photos on houzz	People who liked this photo also liked
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don camillo products for sale | eBay
Good - Comrade Don Camillo and Don Camillo and the Devil - Guareschi, Giovanni 1
AUTHOR: Guareschi, Giovanni. TITLE: Comrade Don Camillo and Don Camillo and the Devil. The hinges are in good condition. The page edges are clean. CONDITION: Good. Acceptable - Very well read. Reading copy only.
The Don Camillo Omnibus: The Little World of Don Camillo; Don Camillo and the Pr
Title: The Don Camillo Omnibus: The Little World of Don Camillo; Don Camillo and the Prodigal Son; Don Camillo's Dilemma. Title : The Don Camillo Omnibus: The Little World of Don Camillo; Don Camillo and the Prodigal Son; Don Camillo's Dilemma.
The Little World of Don Camillo by Giovanni Guareschi, Penguin Paperback Book
Don Camillo's Dilemma by Giovanni Guareschi, Penguin Paperback Book
The little world of Don Camillo - Giovanni Guareschi - Good - Hardcover
Author: Giovanni Guareschi. Title: The little world of Don Camillo. This date is supplied from the publishers data and can be inaccurate. Item Condition: Used; Good.
New listingDon Camillo and the Devil : Giovanni Guareschi
Don Camillo and the Devil : Giovanni Guareschi.
Acceptable - The Don Camillo Omnibus: The Little World of Don Camillo; Don Camil
TITLE: The Don Camillo Omnibus: The Little World of Don Camillo; Don Camillo and the Prodigal Son; Don Camillo's Dilemma. CONDITION: Acceptable. The text to the spine is clear and bright. Acceptable - Very well read.
The Little World of Don Camillo : Giovanni Guareschi
The Little World of Don Camillo : Giovanni Guareschi.
DON CAMILLO AND COMPANY, Guareschi, Giovanni
Authors: Guareschi, Giovanni. Publication Date: 28 June 2018. Weight: 280 grams. Length: 132mm.
Comrade Don Camillo and Don Camillo and the Devil by Guareschi, Giovanni, Hardco
Author(s): Guareschi, Giovanni. Title: Comrade Don Camillo and Don Camillo and the Devil. Wear/marking to binding. Publication Date: 1965-01-01. Condition: Good. Pagination: 303.
Don Camillo & the Devil - Giovanni Guareschi - Acceptable - Hardcover
Author: Giovanni Guareschi. Title: Don Camillo & the Devil. Jacket has been clipped. Item Condition: Used; Acceptable. This date is supplied from the publishers data and can be inaccurate. Published date: 1957.
Comrade Don Camillo, Guareschi, Giovanni, Good Condition Book, ISBN
Authors : Guareschi, Giovanni. Title: Comrade Don Camillo. Title : Comrade Don Camillo. Binding : Hardcover. Product Category : Books. Condition : Good. Publication Date : 1964-01-01. Signed : False.
Don Camillo Meets Hell's Angels by Giovanni Guareschi, Penguin Paperback Book
Don Camillo & His Flock (No. 2 in the Don Camillo Series) (Paperb...
MPN: line illustrations. QUICK DESPATCH. Language: English. Length: 132mm. Width: 196mm. Height: 30mm.
18 new & refurbished from £8.16
COMRADE DON CAMILLO, Guareschi, Giovanni
Authors: Guareschi, Giovanni. COMRADE DON CAMILLO. Publication Date: 28 April 2017. About Speedyhen. QUICK DESPATCH.
The Little World of Don Camillo (No. 1 in the Don Camillo series)...
Number Of Pages: 272. Height: 31mm.
3 product ratings3 product ratings - The Little World of Don Camillo (No. 1 in the Don Camillo series)...
THE WORLD OF DON CAMILLO - Terence Hill,..Dvd..
THE WORLD OF DON CAMILLO. Note to USA + Canada: This is a PAL format DVD which will not be viewable on standard NTSC DVD players. SEALED DVD. WILL PLAY FINE ON A UK DVD PLAYER !
Comrade Don Camillo by Giovanni Guareschi - Giovanni Guareschi - Acceptable -...
Title: Comrade Don Camillo by Giovanni Guareschi (1976-11-08). Author: Giovanni Guareschi. Item Condition: Used; Acceptable. Published date: 1966. This date is supplied from the publishers data and can be inaccurate.
Comrade Don Camillo, Guareschi, G., Very Good Book
Authors : Guareschi, G. Comrade Don Camillo. Title : Comrade Don Camillo. Binding : Hardcover. Product Category : Books. Books, Comics & Magazines Other Fiction Books Other Non-Fiction Books Childrens & Young Adult Books General Fiction Books Children's Fiction Books.
The World of Don Camillo (Omnibus volume comprising The Little World of Don Cami
Binding: Hardcover. Edition: 1st Edition. SKU: 4919278. Condition: Used; Good.
Good - Don Camillo and the Prodigal Son - Guareschi, Giovanni 1952-01-01 The hin
AUTHOR: Guareschi, Giovanni. TITLE: Don Camillo and the Prodigal Son. CONDITION: Good. Acceptable - Very well read. Reading copy only. May have significant wear and tear and contain notes & highlighting.
Don Camillo and Peppone (The Don Camillo Series) by Guareschi, Dudgeon New..
Title: Don Camillo and Peppone (The Don Camillo Series) Item Condition: New. Author: Giovanni Guareschi,Piers Dudgeon ISBN 10: 190006426X. Edition: 2nd Revised edition List Price: -. Used-like N : The book pretty much look like a new book.
Acceptable - Don Camillo's dilemma - Guareschi, Giovanni 1954-01-01 The hinges a
AUTHOR: Guareschi, Giovanni. TITLE: Don Camillo's dilemma. The page edges are clean. CONDITION: Acceptable. Acceptable - Very well read. Reading copy only. May have significant wear and tear and contain notes & highlighting.
Don Camillo in Antiquarian and Collectable Books
Don Camillo in Dvds & Blu-Rays

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Spintronics technical paper
by shishu pal
by shailendrauce
TECHNICAL SEMINAR ON SPINTRONIC TECHNOLOGY Submitted in Partial Fulfillment of the requirement For the award of degree of Bachelor of Technology InELECTRONICS AND COMMUNICATION ENGINEERING Submitted by A. DIVYAJYOTHI 096L1A0405 Under the Esteemed coordinator of D.V.RAJESHWAR RAJU (Assistant Professor) PRASAD ENGINEERING COLLEGE (Approved by AICTE and Affiliated to JNTU Hyderabad) JANGAON, WARANGAL, 506167(AP) 1
Certificate This is to certify that the mini project report entitled SPINTRONIC TECHNOLOGY isbeing submitted by A. DIVYAJYOTHI in partial fulfillment of the requirement for the award ofdegree in Bachelor of Technology in Electronics and Communication Engineering during theperiod 2009-2013. This is a record of students own work carried out by them under oursupervision and guidance. The matter enclosed in this project report has not been submitted for the award of anyother Degree. D.V.RAJESHWAR RAJU. B.SWAMY. Coordinator Head of the Department ACKNOWLEDGEMENT 2
My special thanks to Mrs.D.RAMADEVI, Principal and management forproviding all the facilities required for completing this seminar. We are very grateful to Mr.B.SWAMY, Head of the department, andELECTRONICS AND COMMUNICATION ENGINEERING for his inspiring guidanceand advice throughout the project. We owe our deep depth of gratitude to our coordinator D.V.RAJESHWAR RAJU,Assistant professor for his valuable guidance and constant encouragement at eachstage of this project work. ABSTRACT 3
Keywords:(GMR) “Spintronics” is an emergent NANO technology, which uses the spin of an electroninstead of or in addition to the charge of an electron. Electron spin has two states either “up” or“down”. Aligning spins in material creates magnetism. Moreover, magnetic field affects thepassage of spin-up and spin-down electrons differently the paper starts with the detail descriptionof the fundamentals and properties of the spin of the electrons. It proceeds with a note onmagneto resistance, the development of Giant Magneto resistance (GMR) and devices likeMagneto Random Access Memory, which are the new version of the traditional RAMs. Itdescribe how this new version of RAMs which can revolutionize the memory industry. There isalso detailed explanation of the way, how this revolution can increase the data density in ourmemory systems. It is followed by an account of new Spin Field Effect Transistors. It alsospecifies the differences between electronic devices and spintronic devices. It also gives thehurdles due to the presence of holes. This paper also discusses about a quantum computer, whichuses qubits rather than normal binary digits for computations. It also gives the hurdles due to thepresence of holes. Finally it ends with a note on why we should switch on this technology. Ranroad track and conveyor belts kept the Ford’s assemble line running. At that time, his method ofproduction was lauded and was considered most efficient. But that ford’s assembly plant, whichwas only eulogized in his time, will look strange to those who were born and raised up in the21st century. Because the machines in the next 50 years will get increasingly smaller – so smallthat thousands of machines will fit into the full stop at the end of this line. This branch ofengineering which deals with things smaller than 100 nanometers is termed as Nanotechnology.Eric Dexler first coined it in his book “engine of creation”. In this paper we will discuss about a field of Nanotechnology, which is believed toreplace conventional electronics in the near future, i.e. “spintronics”. Chapter-1 INTRODUCTION 4
1.1 SPINTRONICS Imagine a data storage device of the size of an atom working at a speed of light. Imaginea microprocessor whose circuits could be changed on the fly. One minute is could be optimizedfor data base access. The next for transaction processing and the next for scientific numbercrunching. Finally, imagine a computer memory thousands of times denser and faster thantoday’s memories. The above-mentioned things can be made possible with the help of an exploding science– “spintronics”. Spintronics is a NANO technology which deals with spin dependent propertiesof an electron instead of or in addition to its charge dependent properties, Conventionalelectronics devices rely on the transport of electric charge carries electrons. But there is otherdimension of an electron other than its charge and mass i.e. spins. This dimension can beexploited to create a remarkable generation of spintronic devices. It is believed that in the nearfuture spintronics could be more revolutionary than any other thing that nanotechnology hasstirred up so far.1.2 WHY IS IT GOING TO BE ONE OF THE RAPIDLY EMERGINGFIELDS? As there is rapid progress in the miniaturization of semiconductor electronic devicesleads to a chip features smaller than 100 nanometers in size, device engineers and physists are 5
inevitable faced with a looming presence of a quantum property of an electron known as spin,which is closely related to magnetism. Devices that rely on an electron spin to perform theirfunctions from the foundations of spintronics. Information-processing technology has thus farrelied on purely charge based devices ranging from the now quantum, vaccume tube today’smillion transistor microchips. Those conventional electronic devices move electronic chargesaround, ignoring the spin that tags along that side on each electron. CHAPTER-2 ELECTRON SPIN2.1 FUNDAMENTALS OF SPIN 6
1. In addition to their mass and electric charge, electrons have an intrinsic quantity of angularmomentum called spin, almost of if they were tiny spinning balls.2. Associated with the spin is magnetic field like that of a tiny bar magnet lined up with the spinaxis.3. Scientists represent the spin with a vector. For a sphere spinning “west to east”, the vectorpoints “north” or “up”. It points “down” for the opposite spin.4. In a magnetic field, electrons with “spin up” and “spin down” have different energies.5. In an ordinary electronic circuit the spins are oriented at random and have no effect on currentlow.6. Spintronic devices create spin-polarized currents and use the spin to control current flow.Electrons like all fundamental particles have a property called spin, which can be oriented in onedirection, or the other called spin-up or spin-down. Magnetism is an intrinsic Physical propertyassociated with the spins. An intuitive notion of how an electron spins is suggested below. Imagine a small electronically charged sphere spinning rapidly. The circulating chargesin the sphere amount to tiny loops of electric current which creates a magnetic field.. a spinningsphere in an external magnetic field changes its total energy according to how its spin vector isaligned with the spin. In some ways, an electron is just like a spinning sphere of charge, anelectron has a quantity of angular momentum (spin) an associated magnetism. In an ambient 7
magnetic field and the spin changing this magnetic field can change orientation. Its energy isdependent on how its spin vector is oriented. The bottom line is that the spin along with massand charge is defining characteristics of an electron,. In an ordinary electric current, the spinpoints at random and plays no role in determining the resistance of a wire or the amplification ofa transistor circuit. Spintronic devices in contrast rely on the differences in the transport of spin-up and spindown electrons. CHAPTER-3 GMR3.1 GIANT MAGNETO RESISTANCE 8
Magnetism is the integral part of the present day’s data storage techniques. Right fromthe Gramophone disks to the hard disks of the super computer magnetism plays an importantrole. Data is recorded and stored as tiny areas of magnetized iron or chromium oxide. To accessthe information, a read head detects the minute changes in magnetic field as the disk spinsunderneath it. In this way the read heads detect the data and sent it to the various succeedingcircuits. The magneto resistant devices can sense the changes in the magnetic field only to asmall extent, which is appropriate to the existing memory devices. When we reduce the size andincrease data storage density, we reduce the bits, so our sensor also has to be small and maintainvery, very high sensitivity. The thought gave rise to the powerful effect called “GIANTMAGNETORESISTANCE” OR (GMR). Giant magneto resistance (GMR) came into picture in1988, which lead the rise of spintronics. It results from subtle electron-spin effects in ultra-thin‘multilayer’ of magnetic materials, which cause huge changes in their electrical resistance whena magnetic field is applied. GMR is 200 times stronger than ordinary magneto resistance. It wassoon realized that read heads incorporating GMR materials would be able to sense much smallermagnetic fields, allowing the storage capacity of a hard disk to increase from 1 to 20 gigabits.3.2 CONSTRUCTION OF GMR The basic GMR device consists of a three-layer sandwich of a magnetic metal such ascobalt with a nonmagnetic metal filling such as silver. Current passes through the layersconsisting of spin-up and spin-down electrons. Those oriented in the same direction as theelectron spins in a magnetic layer pass through quite easily while those oriented in the oppositedirection are scattered. If the orientation of one of the magnetic layers can easily be changed bythe presence of a magnetic field then the device will act as a filter, or ‘spin valve’, letting throughmore electrons when the spin orientations in the two layers are the same and fewer whenorientations are oppositely aligned. The electrical resistance of the device can therefore bechanged dramatically. In an ordinary electric Current, the spin points at random and plays no role in determining the resistance of a wire or the amplification of a transistor circuit. Spintronicdevices, in contrast, rely on differences in the transport of “spin up” and “spin down” electrons.When a current passes through the Ferro magnet, electrons of one spin direction tend to beobstructed. 9
A ferromagnetic can even affect the flow of a current in a nearby nonmagnetic metal. Forexample, in the present-day read heads in computer hard drives, wherein a layer of anonmagnetic metal is sandwiched between two ferromagnetic metallic layers, the magnetizationof the first layer is fixed, or pinned, but the second ferromagnetic layer is not. As the read headtravels along a track of data on a computer disk, the small magnetic fields of the recorded 1’s and0`s change the second layer’s magnetization back and forth parallel or anti parallel to themagnetization of the pinned layer. In the parallel case, only electrons that are oriented in thefavored direction flow through the conductor easily. In the anti parallel case, all electrons areimpeded. The resulting changes in the current allow GMR read heads to detect weaker fieldsthan their predecessors; so that data can be stored using more tightly packaged magnetized spotson a disk. CHAPTER-4 SPINTRONIC DEVICES4.1 MRAM (MAGNETORESISTIVE RANDOM ACCESS 10
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Consumer Product Safety: testmessage | Safety | Laboratories
Consumer Product Safety: testmessage
CPSC Staff Conformity Assessment Message for China* Manufacturer/Brand Owner Message 1.
For Those Products Where a Certification Program Exists, Certification of Products is Recommended • You may take advantage of various product certification programs associated with certain industries, such as ** a) Juvenile Products Manufacturing Association for “juvenile products,” b) American Fireworks Standards Laboratory for fireworks, c) An OSHA (Occupational Safety and Health Administration) NRTL (Nationally Recognized Testing Laboratory) for certification of electrical and life-safety products, such as fire sprinklers, carbon monoxide and smoke alarms, fire extinguishers, seasonal/decorative products, and electrical outlet strips for which the laboratory is accredited. A list of current NRTLs and their respective scopes of accreditation may be found at: http://www.osha.gov/dts/otpca/nrtl . Important elements of certification programs (ISO/IEC Guide 65) include surveillance services such as: a) Factory inspections b) Pre-market production sample testing, and c) Post-market surveillance.
2. Get Product Tested • CPSC staff recommends product testing, internally or externally, by an accredited test laboratory: a) accredited to the ISO/IEC 17025 standard by a recognized accreditation body b) with the appropriate scope to ensure the laboratory’s technical competence for the specific product safety standards. Tested products should be representative of production. Employ appropriate quality control systems for product characteristics that impact safety. Sampling of production runs should be done to ensure continued quality and compliance.
3. Standards and Training are Recommended • For manufacturers whose activities involve design: a) identify appropriate safety standards b) translate those standards when necessary c) incorporate safety standards into product design, and d) consider product safety engineering courses for key staff in design, manufacturing and marketing/sales.
* These suggestions are those of CPSC staff, have not been reviewed or approved by, and may not necessarily reflect the views of, the Commission. ** Views of the Associations or the Laboratories mentioned may not reflect the views of the Commission.
U.S. Retailer/Importer Message 1. Internal or External Testing is Recommended • CPSC staff recommends that U.S. retailers/importers expect that all products bound for the U.S. market meet appropriate product safety standards and be tested to these standards by an accredited laboratory, either internally or externally. Tested products should be representative of production. Retailers/importers should undertake or arrange for inspection activities to insure that marketed products continue to meet the standards to which the sample products were tested. Recommended inspection activities may include, but are not limited to: a) Review of test/certification reports b) Verification of certification mark (if applicable) with certification agency/laboratory c) Auditing of manufacturing facilities d) Independent verification or testing of the product
2. Standards and Training are Recommended • CPSC staff recommends that U.S. retailers/importers expect and encourage their manufacturers/suppliers/vendors to: a) Identify or develop appropriate testing and/or certification resources to demonstrate compliance with appropriate safety standards. Employ appropriate quality control systems for product characteristics that impact safety. For manufacturers whose activities involve design: • identify appropriate safety standards, • translate those standards when necessary, • incorporate safety standards into product design, and • consider product safety engineering courses for key staff in design, manufacturing and marketing/sales.
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"Surgery Simulator" (X/post from r/gaming by /u/alo81) : emsjump to contentmy subredditsannouncementsArtAskRedditaskscienceawwblogbookscreepydataisbeautifulDIYDocumentariesEarthPornexplainlikeimfivefoodfunnyFuturologygadgetsgamingGetMotivatedgifshistoryIAmAInternetIsBeautifulJokesLifeProTipslistentothismildlyinterestingmoviesMusicnewsnosleepnottheonionOldSchoolCoolpersonalfinancephilosophyphotoshopbattlespicsscienceShowerthoughtsspacesportstelevisiontifutodayilearnedTwoXChromosomesUpliftingNewsvideosworldnewsWritingPromptsedit subscriptionspopular-all-random | AskReddit-funny-pics-worldnews-gaming-news-gifs-videos-todayilearned-aww-movies-Showerthoughts-mildlyinteresting-OldSchoolCool-Jokes-television-LifeProTips-TwoXChromosomes-Futurology-IAmA-nottheonion-dataisbeautiful-UpliftingNews-explainlikeimfive-science-books-photoshopbattles-tifu-food-Documentaries-WritingPrompts-EarthPorn-sports-history-personalfinance-GetMotivated-Art-space-Music-askscience-DIY-creepy-nosleep-gadgets-philosophy-listentothis-InternetIsBeautiful-announcements-blogmore » emscommentsother discussions (5)Want to join? Log in or sign up in seconds.|Englishlimit my search to r/emsuse the following search parameters to narrow your results:subreddit:subredditfind submissions in "subreddit"author:usernamefind submissions by "username"site:example.comfind submissions from "example.com"url:textsearch for "text" in urlselftext:textsearch for "text" in self post contentsself:yes (or self:no)include (or exclude) self postsnsfw:yes (or nsfw:no)include (or exclude) results marked as NSFWe.g. subreddit:aww site:imgur.com dogsee the search faq for details.advanced search: by author, subreddit...this post was submitted on 29 Jan 201316 points (80% upvoted)shortlink: remember mereset passwordloginSubmit a new linkSubmit a new text postemssubscribeunsubscribe25,626 readers94 users here nowRules
created by jhraAB - Ex Band-Aid jockeya community for 7 yearsmessage the moderatorsMODERATORSjhraAB - Ex Band-Aid jockeyAceRockolaIL CCEMT-P/ER Techdrmedic09TX LPThe_Space_CowboyJIBC Studentmedicaid_driverNY ParamagicianadenocardAutoModeratorTrauMedic__ Spine poke test masterabout moderation team »discussions in r/ems<>X133 · 9 comments [Shitpost] Another meme for a midnight call68 · 7 comments Some of you may remember my post about a month ago regarding my father going into vfib arrest with about 15-20 minutes before achieving ROSC, well here he is thanking 4 of the men who saved his life!186 · 14 comments Tree of life, NY State EMS Memorial in Albany.10 · 1 comment Anglia Ruskin sent me an ambulance stress toy in my prospectus.14 · 1 comment Pilot killed in PennSTAR medical helicopter crash in Del.28 · 21 comments Overwhelming media fear of fentanyl leads to man refusing to do paramedic guided CPR on patient.3 · 3 comments Interesting article on work related stress.3 · 6 comments "Even if you swan dive down a staircase you can't fracture your cervical spine" - Baywatch 2017.90 · 11 comments Excuse me... This isn't the late 1900s.14 · 29 comments Interesting debates going on about this. The hospital agency in question has ambulances both in the 911 system and their own interfacility system.This is an archived post. You won't be able to vote or comment.
151617"Surgery Simulator" (X/post from r/gaming by /u/alo81) (i.minus.com)submitted 4 years ago by The-Cure5 commentsshareall 5 commentssorted by: besttopnewcontroversialoldrandomq&alive (beta)[–]TakeyoMedicineIL - EMT-P 7 points8 points9 points 4 years ago (0 children)I don't know about anyone else, but that looks like a perfectly normal procedure to me
permalinkembedsavegive gold[–]PushEpiAssholeFL_Paramedic 2 points3 points4 points 4 years ago (0 children)This man needs a bypass! Get me my hammer, stat!!!
permalinkembedsavegive gold[–]Combatmed101AR NREMT/ArmyNG 68W/ EMT-P Student 0 points1 point2 points 4 years ago (0 children)Yea that looks about standard. permalinkembedsavegive gold[–][deleted] 0 points1 point2 points 4 years ago (1 child)Saw a tv show like this recently, some British drama paramedic show. It was cringeworthy.
Correct me if I'm wrong, but how many of you guys cut open a patients chest, and squeeze their heart with your fist to restart it in the back of your bus...in the darkness I may add....nobody? didn't think so. permalinkembedsave[–]IrunongamesNJ/PA EMT - EM Enthusiast 2 points3 points4 points 4 years ago (0 children)What's wrong with that? When I do that I always ask the patient if they refuse, by this point they are unconscious so implied consent allows it. amiright?
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Fashion Dressmaking Burnout Silk Fabric 2 YARDS Black | eBay Please enable JavaScript Our new search experience requires JavaScript to be enabled. Please enable JavaScript on your browser, then try again.
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Patent US6514827 - Method for fabricating a dual metal gate for a semiconductor device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsA method for fabricating a dual metal gate structure for a semiconductor device including deposition of a semiconductor substrate having PMOS and NMOS regions, a first gate having a first insulating layer and a first metal layer is formed in a first region. The first region is either the PMOS or NMOS...http://www.google.com/patents/US6514827?utm_source=gb-gplus-sharePatent US6514827 - Method for fabricating a dual metal gate for a semiconductor deviceAdvanced Patent SearchPublication numberUS6514827 B2Publication typeGrantApplication numberUS 10/034,529Publication dateFeb 4, 2003Filing dateDec 28, 2001Priority dateDec 29, 2000Fee statusPaidAlso published asUS20020086445Publication number034529, 10034529, US 6514827 B2, US 6514827B2, US-B2-6514827, US6514827 B2, US6514827B2InventorsTae Kyun Kim, Se Aug Jang, Tae Ho Cha, In Seok YeoOriginal AssigneeHynix Semiconductor Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (17), Referenced by (19), Classifications (18), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetMethod for fabricating a dual metal gate for a semiconductor deviceUS 6514827 B2Abstract A method for fabricating a dual metal gate structure for a semiconductor device including deposition of a semiconductor substrate having PMOS and NMOS regions, a first gate having a first insulating layer and a first metal layer is formed in a first region. The first region is either the PMOS or NMOS region, and the remaining region becomes a second region. A dummy gate is formed in the second region. A spacer and a source/drain region are formed for each of the first and dummy gates. The dummy gate, however, is removed to expose a portion of the substrate in the second region. A second gate constructed of a second gate insulating layer and a second metal layer is then formed on the exposed portion of the substrate in the second region.
What is claimed is: 1. A method for fabricating a dual metal gate structure for a semiconductor device, comprising the steps of:
providing a semiconductor substrate having a PMOS region and an NMOS region formed therein; sequentially depositing a first gate insulating layer and a first metal layer having a work function value of 4.2 eV or less on the semiconductor substrate; sequentially patterning the first metal layer and the first gate insulating layer, so that a first gate is formed in a first region, the first region being either the PMOS region or the NMOS region, and a dummy gate is formed in a second region, the second region being the other of the PMOS and NMOS regions; forming a spacer on each lateral sidewall of the first gate and the dummy gate; forming a source/drain region in the semiconductor substrate adjacent each side of the first gate and the dummy gate; depositing an interlayer dielectric layer on the resultant structure to a thickness between 4,000 and 6,000 Å, including over the source/drain region; polishing the interlayer dielectric layer so as to expose the patterned first metal layer; removing the dummy gate so as to expose a portion of the semiconductor substrate in the second region; sequentially depositing a second gate insulating layer and a second metal layer having a work function value of 4.8 eV or greater on a portion of the semiconductor substrate exposed due to removal of the dummy gate and the interlayer dielectric layer; and polishing the second metal layer and the second gate insulating layer so as to expose the interlayer dielectric layer, thereby establishing a second gate in the second region. 2. The method of claim 1, wherein the first metal layer is used for NMOS, there by defining the first region, and the second metal layer is used for PMOS, thereby defining the second region.
3. The method of claim 1, wherein the first metal layer is used for PMOS, thereby defining the first region, and the second metal layer is used for NMOS, thereby defining the second region.
4. A method for fabricating a dual metal gate structure for a semiconductor device, comprising the steps of:
providing a semiconductor substrate having a PMOS region and an NMOS region formed therein; sequentially depositing a first gate insulating layer, a first metal layer having a work function value of 4.2 eV or less, and a first mask layer on the semiconductor substrate; patterning the first mask layer; sequentially etching the first metal layer and the first gate insulating layer by using the patterned first mask layer as an etch barrier, so that a first structure is formed respectively in the PMOS region and the NMOS region; forming a spacer on each lateral sidewall the gate structure; forming a source/drain region in the semiconductor substrate adjacent a side of the gate structure; depositing an interlayer dielectric layer to a thickness between 4,000 and 6,000 Å on the resultant structure having the source/drain region; polishing the interlayer dielectric layer and the first mask layer so as to expose the etched first metal layer; partially depositing a second mask layer on the resultant structure so as to cover the exposed first metal layer in one region selected from either the PMOS region or the NMOS region, thereby defining a first region; sequentially etching the first metal layer and the first gate insulating layer by using the second mask layer as an etch barrier, so that a portion of the semiconductor substrate is exposed in the region not selected in the previous step, thereby defining a second region; sequentially depositing a second gate insulating layer and a second metal layer having a work function value of 4.8 eV or greater on the exposed portion of the semiconductor substrate, the interlayer dielectric layer, and the second mask layer; and polishing the second metal layer, the second gate insulating layer, and the second mask layer so as to expose the interlayer dielectric layer, thereby completing formation of the dual gate structure. 5. The method of claim 4, wherein the first metal layer is deposited to a thickness of between 1000 and 3000 Å.
6. The method of claim 4, wherein the first metal layer is used for NMOS, thereby defining the NMOS region as the first region and the second metal layer is used for PMOS, thereby defining the PMOS region as the second region.
7. The method of claim 4, wherein the first metal layer is used for PMOS, thereby defining the PMOS region as the first region, and the second metal layer is used for NMOS, thereby defining the NMOS region as the second region.
8. The method of claim 4, wherein the first gate insulating layer and the second insulating layer are respectively made of a material selected from a group comprising oxide, oxy-nitride, and a material having a high dielectric constant.
9. The method of claim 4, wherein the first mask layer and the second mask layer are deposited respectively to a thickness between 800 and 1000 Å.
10. The method of claim 4, wherein the etching of the first metal layer and the first gate insulating layer is performed by using either a dry etch or a wet etch.
The present invention relates generally to a method for forming a gate structure of a semiconductor device, and more particularly, the present invention relates to a method for fabricating a dual metal gate by using a damascene process.
Recently, as development of semiconductor devices on the level of sub-0.1 micron has begun in earnest, a conventional gate electrode made of polysilicon or metal silicide has reached several physical limits.
For example, the polysilicon gate has problems, such as an increase in effective thickness of a gate insulating layer due to a gate depletion phenomenon, penetration of dopants from the p+ or n+ polysilicon gate to a substrate, and variation in the threshold voltage caused by a change of dopant distribution. In addition, the polysilicon gate is not suitable for realizing low resistance levels required for reductions in line width.
Thus, there has arisen a need for a new gate electrode with a new material or a new structure as an alternative to conventional gates. To meet such need, a metal gate electrode has been introduced and developed in the field. Since no dopant is basically required for the metal gate electrode, the above-noted problems existing in conventional gates are solved naturally.
Furthermore, the conventional metal gate electrode permits formation of a single metal gate in which a threshold voltage is symmetrically formed in the NMOS and PMOS regions by using metal with a value of the work function at an intermediate band gap of silicon. The metal gate electrode may be made of various metal, such as W, WN, Ti, TiN, Mo, MoN, Ta, TaN, Ti3Al and Ti3AlN.
Unfortunately, when a single metal gate is employed for a CMOSFET device, a flat band voltage is decreased in the NMOS and PMOS regions and consequently, the threshold voltage is increased. In order to reduce the threshold voltage, a buried channel is formed through counter doping. However, this gives rise to increases of a short channel effect and a leakage current in the CMOSFET device.
Accordingly, a new attempt to form a dual metal gate has been made by separately using different kinds of metal gates with different values of the work function in the respective NMOS and PMOS regions, based upon the operational principle of an existing dual polysilicon gate.
FIGS. 1A to 1E show the steps of a method for fabricating a conventional dual metal gate of the semiconductor device according to the prior art.
Referring to FIG. 1A, after a field oxide layer 2 is formed on a semiconductor substrate 1, an NMOS region 3 a and a PMOS region 3 b are separately formed in the semiconductor substrate 1 by using masking and ion-implanting processes well known in the art. Next, a thin screen oxide layer (not shown) is formed on the semiconductor substrate 1, and proper ions for adjusting a threshold voltage are implanted respectively into the NMOS and PMOS regions 3 a and 3 b by a photo masking process.
Then, after the screen oxide layer is removed, as shown in FIG. 1B, a gate insulating layer 4, a metal layer 5 for NMOS and a barrier metal layer 6 are sequentially formed over the entire semiconductor substrate 1. The metal layer 5, used for NMOS, comprises a metal having a Fermi energy near a conduction band of silicon.
Next, an appropriate first etch mask (not shown) is formed on the NMOS region 3 a. Then, referring to FIG. 1C, the barrier metal layer 6 and the NMOS metal layer 5 are removed in sequence from the PMOS region 3 b by a photo etching process using the first etch mask.
Thereafter, as shown in FIG. 1D, a metal layer 7, used for PMOS, is deposited over the entire resultant structure on the semiconductor substrate 1.
Then, an appropriate second etch mask (not shown) is formed on the PMOS metal layer 7. Next, referring to FIG. 1E, dual metal gates 8 a and 8 b are separately formed in the NMOS and PMOS regions 3 a and 3 b by a photo etching process using the second etch mask.
Subsequently, a spacer nitride is deposited over an entire resultant structure and then subjected to a blanket etching process. Therefore, a spacer 9 is formed on the lateral sidewalls of the dual metal gates 8 a and 8 b. Next, a source/drain region 10 a and 10 b is formed in each of the NMOS and PMOS regions 3 a and 3 b by a source/drain ion implantation process, so that fabrication of a CMOSFET device having dual metal gates is completed.
Unfortunately, the above-described conventional dual metal gate structure has several disadvantages. For example, when the NMOS and PMOS metal layers are patterned to form the metal gate, it is difficult to institute an etch recipe for the metal gate. Additionally, an etching process or an ion implantation process may create plasma damage, and a thermal process performed after formation of the metal gate may create thermal damage.
Furthermore, since the metal gate of the NMOS region is different from that of the PMOS region in height and material thereof, it is hard to reliably establish the etching process capable of preventing the semiconductor substrate from being damaged.
SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an improved method for fabricating a dual metal gate structure for a semiconductor device while allowing simplified, stable and reliable process.
It is another object of the present invention to provide an improved method for fabricating a dual metal gate structure for a semiconductor device while minimizing damage of the gate caused by plasma or thermal ambience and thereby enhancing the profile and operating characteristics of the gate.
It is still another object of the present invention to provide an improved method for fabricating a dual metal gate structure for a semiconductor device while attaining a high degree of integration of the device.
These and other objects in accordance with the present invention are attained by a method using a damascene process to form a dual metal gate structure.
The method according to the present invention comprises providing a semiconductor substrate having a PMOS region and an NMOS region formed therein, and sequentially depositing a first gate insulating layer and a first metal layer over the semiconductor substrate. The first metal layer and the first gate insulating layer are then sequentially patterned, so that a first gate is formed in a first region, the first region being selected between either the PMOS region and the NMOS region, and a dummy gate is formed in the second region not selected as the first region. Next, a spacer is formed on each lateral sidewall of the first gate and the dummy gate, and a source/drain region is formed in the semiconductor substrate adjacent each side of the first gate and the dummy gate. Thereafter, an interlayer dielectric layer is deposited on the resultant structure, including over the source/drain region, and polished so as to expose the patterned first metal layer. The dummy gate is then removed so as to expose a portion of the semiconductor substrate in the second region. Next, a second gate insulating layer and a second metal layer are sequentially deposited on the exposed portion of the semiconductor substrate and the interlayer dielectric layer. Subsequently, the second metal layer and the second gate insulating layer are polished so as to expose the interlayer dielectric layer. Thereby, a second gate is established in the second region.
In the method, first and second metal layers may be used for NMOS and PMOS, respectively. The first metal layer for NMOS is preferably made of a metal having a work function value of 4.2 eV or less, while the second metal layer used for PMOS is preferably made of a metal having a work function value of 4.8 eV or greater. Alternatively, the first and second metal layers may be used for PMOS and NMOS, respectively, so that the definition of the first and second regions are reversed. In this case, the second metal layer for NMOS is preferably made of a metal having a work function value of 4.2 eV or less, and the first metal layer for PMOS is preferably made of metal having a work functional value of 4.8 eV or more.
According to an alternate embodiment of the present invention, another method for fabricating a dual metal gate structure for a semiconductor device is described. The alternate embodiment method comprises providing a semiconductor substrate having a PMOS region and an NMOS region formed therein, and sequentially depositing a first gate insulating layer, a first metal layer and a first mask layer on the semiconductor substrate. Next, after the first mask layer is patterned, the first metal layer and the first gate insulating layer are sequentially etched by using the patterned first mask layer as an etch barrier, so that a gate structure is formed respectively in the PMOS region and the NMOS region. A spacer is then formed on a lateral sidewall of the gate structure, and a source/drain region is formed in the semiconductor substrate adjacent appropriate sides of the gate structure. Thereafter, an interlayer dielectric layer is deposited on the resultant structure having the source/drain region, and this is polished together with the first mask layer so as to expose the etched first metal layer. Next, a second mask layer is partially deposited on the resultant structure so as to cover the exposed first metal layer in one region selected from either the PMOS region or the NMOS region, thereby defining a first region. The first metal layer and the first gate insulating layer are then sequentially etched by using the second mask layer as an etch barrier, so that a portion of the semiconductor substrate is exposed in the region not selected in the previous steps thereby defining a second region. A second gate insulating layer and a second metal layer are sequentially deposited over the exposed portion of the second region of the semiconductor substrate, the interlayer dielectric layer, and the second mask layer. Subsequently, the second metal layer, the second gate insulating layer, and the second mask layer are polished so as to expose the interlayer dielectric layer, thereby, completing formation of the dual gate structure.
Preferably, the first metal layer may be deposited with a thickness of between, 1000 and 3000 Å. The first and second metal layers may be used for NMOS and PMOS, so that the NMOS is defined as the first region and the PMOS is defined as the second region or alternatively for PMOS and NMOS, respectively, so that the definitions of the first and second regions are reversed. The metal layer for NMOS is preferably made of a metal having a work function value of 4.2 eV or less, while the metal layer for PMOS is preferably made of a metal having a work function value of 4.8 eV or greater.
In addition, the first gate insulating layer and the second insulating layer may be respectively made of a material selected from a group comprising oxide, oxy-nitride, and other materials having a high dielectric constant. Furthermore, the first mask layer and the second mask layer may be deposited respectively to a thickness of between 800 and 1000 Å, and the interlayer dielectric layer may be deposited to a thickness of between 4000 and 6000 Å. Etching of the first metal layer and the first gate insulating layer may be performed by a dry etch or a wet etch.
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1E are cross-sectional views showing in sequence the steps of a method for fabricating a conventional dual metal gate structure for a semiconductor device according to the prior art.
FIGS. 2A to 2I are cross-sectional views showing in sequence the steps of a method for fabricating a dual metal gate structure for a semiconductor device according to an embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION The present invention will now be described more fully below with reference to accompanying drawings, in which preferred embodiments of the invention are shown. This invention, however, may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
FIGS. 2A to 2I show in sequence the steps of a method for fabricating a dual metal gate structure for a semiconductor device, particularly by using a damascene process according to an embodiment of the present invention.
Referring to FIG. 2A, a semiconductor substrate 11 in which an active area and a field area are defined is provided, and thereafter a field oxide layer 12 is formed in the field area. Next, an n-well 13 a and a p-well 13 b are formed in the semiconductor substrate 11 by using masking and ion-implanting processes well known in the art. Hereinafter, the n-well 13 a and the p-well 13 b will be called a PMOS region and an NMOS region, respectively.
Next, as shown in FIG. 2B, a screen oxide layer 14 is formed on the semiconductor substrate 11 including over the PMOS and NMOS regions 13 a and 13 b. The screen oxide layer 14 preferably has a thickness of between 50 and 100 Å. The PMOS and NMOS regions 13 a and 13 b are then subjected to a photo masking process and an ion implantation process for adjusting threshold voltage. The screen oxide layer 14 is then removed. Preferably, arsenic (As) or phosphorus (P) are used as dopants for the PMOS region 13 a, while boron (B) or boron difluoride (BF2) are used as dopants for the NMOS region 13 b. Next, as shown in FIG. 2C, a first gate insulating layer 15 and a first metal layer 16 are sequentially deposited over the entire semiconductor substrate 11, including over the PMOS and NMOS regions 13 a and 13 b. Preferably, the first gate insulating layer 15 is made of a material selected from a group including oxide, oxy-nitride, and other materials having a high dielectric constant.
The first metal layer 16 is used for NMOS in the present embodiment, but may be used for PMOS (not shown) in alternative embodiments. The NMOS metal layer 16 is preferably made of a metal having a Fermi energy near a conduction band of silicon. That is, the metal used for the NMOS metal layer 16 has a work functional value of 4.2 eV or below. In addition, the first metal layer 16 may be deposited to a thickness of between 1000 and 3000 Å.
Next, referring to FIG. 2D, a first mask layer 17 is deposited over the first metal layer 16 on the PMOS and NMOS regions 13 a and 13 b. Preferably, the first mask layer 17 has a thickness of from 800 to 1000 Å. Then, the first mask layer 17 is patterned by etching through an appropriate etch mask (not shown) formed thereon.
Next, after the etch mask is removed, the first metal layer 16 and the first gate insulating layer 15 are sequentially etched by using the patterned first mask layer 17 as an etch barrier. Therefore, gate structures 40 and 50 are formed over the PMOS and NMOS regions 13 a and 13 b, respectively. The gate structure 40 in the PMOS region 13 a acts as a dummy gate, while the gate structure 50 in the NMOS region 13 b acts as a first gate of the dual gate structure.
Thereafter, while the dummy gate 40 and the first gate 50 are used as an implant barrier, an appropriate impurity with low doping concentration is implanted into the semiconductor substrate 11 so as to form a lightly doped source/drain region. Next, a nitride layer is deposited over the entire resultant structure and blanket-etched. Therefore, as depicted in FIG. 2E, a spacer 18 is formed on each lateral sidewall of the dummy gate 40 and the first gate 50.
Then, with the spacer 18 being used as an implant barrier, an appropriate impurity with high doping concentration is implanted into the semiconductor substrate 11, so that heavily doped source/drain regions 19 a and 19 b are formed in the semiconductor substrate 11 at each side of the dummy gate 40 and the first gate 50.
Next, referring to FIG. 2F, an interlayer dielectric layer 20 is deposited over the entire resultant structure, including the source/drain regions 19 a and 19 b. Preferably, the interlayer dielectric layer 20 has a thickness of from 4000 to 6000 Å. Then, the interlayer dielectric layer 20 is polished, together with the first mask layer, until the top surface of the etched first metal layer 16 is exposed.
Next, one region, either the PMOS region 13 a or NMOS region 13 b, is masked. In the present embodiment, the NMOS region 13 b, having the first gate 50 is covered with a second mask layer 21 as illustrated in FIG. 2G. That is, the second mask layer 21 is deposited to cover the exposed first metal layer 16 of the first gate 50. Preferably, the second mask layer 21 is deposited with a thickness of between 800 and 1000 Å.
Next, the first metal layer 16 and the first gate insulating layer 15 are wholly removed from the PMOS region 13 a by a dry etch or a wet etch using the second mask layer 21 as an etch barrier. Accordingly, an opening 60 is formed in place of the removed dummy gate, and thereby a portion of the semiconductor substrate 11 is exposed by the opening 60 in the PMOS region 13 a. Then, as shown in FIG. 2H, a second gate insulating layer 22 and a second metal layer 23 are sequentially deposited on the exposed portion of the semiconductor substrate 11, the interlayer dielectric layer 20, and the second mask layer 21. Preferably, the second gate insulating layer 22 is made of a material selected from a group comprising oxide, oxy-nitride, and other materials with high dielectric constant.
The second metal layer 23 is used for PMOS in the present embodiment. The PMOS metal layer 23 is preferably made of metal having a Fermi energy near a valence band of silicon. That is, metal for the PMOS metal layer 23 has a work function value of 4.8 eV or greater.
Referring now to FIG. 2I, the second metal layer 23, the second gate insulating layer 22, and the second mask layer 21 are polished until a top surface of the interlayer dielectric layer 20 is exposed. As a result, the second mask layer 21 is completely removed, and the second metal layer 23 and the second gate insulating layer 22 remain only in the opening 60 over the PMOS region 13 a, thereby establishing a second gate 70 of the dual gate structure.
Though the first and second metal layers 16 and 23 are preferably used for NMOS and PMOS, respectively, in the present embodiment, the first and second metal layers may be used for PMOS and NMOS in alternative embodiments.
As described above in the example, the present invention provides a fabrication method of a dual metal gate structure by performing a damascene process so as to form the second gate of the dual metal gate in addition to a single gate fabrication process for forming the first gate of the dual metal gate structure. As a result, the entire fabrication process becomes simplified and stable.
Furthermore, since the damascene process allows a reduction in damage caused to the gate due to plasma or thermal ambience, the dual metal gate structure according to the present invention can have an excellent profile and improved operational characteristics.
Moreover, an effective solution or approach in the present invention to solve the unsatisfactory problems arising in the prior art may contribute to higher integration of the device.
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ClassificationH01L21/823842, H01L29/66545European ClassificationH01L29/66M6T6F8, H01L21/8238G4Legal EventsDateCodeEventDescriptionSep 12, 2014REMIMaintenance fee reminder mailedJul 28, 2010FPAYFee paymentYear of fee payment: 8Jul 7, 2006FPAYFee paymentYear of fee payment: 4Dec 28, 2001ASAssignmentOwner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OFFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, TAE KYUN;JANG, SE AUG;CHA, TAE HO;AND OTHERS;REEL/FRAME:012433/0754Effective date: 20011227Owner name: HYNIX SEMICONDUCTOR INC. SAN 136-1, AMI-RI, BUBAL-Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, TAE KYUN /AR;REEL/FRAME:012433/0754RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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Lok Sabha elections 2019: Congress’ NYAY scheme struggles with outreach | lok sabha elections | Hindustan Times
Lok Sabha elections 2019: Congress’ NYAY scheme struggles with outreach
People in all corners of the country have heard of the Nyuntam Aay Yojana (Nyay), Congress president Rahul Gandhi said on Saturday.
lok-sabha-elections Updated: May 05, 2019 12:41 IST
Congress President Rahul Gandhi addresses a public meeting(HT file photo)
“Nyay kone kone tak pahunch chuki hai,” he said at a press conference when asked if the minimum income guarantee scheme, with which the Congress proposes to fire up the economy if voted to power, had got any traction. Under the scheme, ~ 72,000 a year would be transferred to bank accounts of women members of the country’s 20% poorest families.
Gandhi’s confidence is, however, belied by what HT discovered in late April on a trip from Meerut in west Uttar Pradesh to Varanasi in the eastern part of the state. Not only was there a general lack of awareness about the scheme, it didn’t appear to have resonated with the few who had heard about it.
In Khatauli, a small town in Muzaffarnagar district about 100 km from Delhi, Chandrashekar Kumar is a daily-wage earner at a brick kiln. “What is Nyay?” he asked. When told about the scheme, he said, “~72,000? I don’t think it is possible to implement such a scheme. The current government said ~6000 per year will be given, some have received ~2000 in their accounts. I haven’t even got that.” Many others in the same area, too, had not heard about Nyay.
In Congress bastion Rae Bareli, from where Sonia Gandhi has filed her nomination, Jatin Yadav runs a small food stall near the party karyalaya (office) on Kutchery Road. “I have not heard of Nyay, but an entire generation of my family has voted for the Congress,” he said.
A huge board with the face of the Congress’s local unit chief, Jagdish Shukla, greets visitors at the office entrance along with a collage of party stalwarts Rahul Gandhi, Priyanka Gandhi Vadra, Sonia Gandhi, Indira Gandhi and Rajiv Gandhi. But there was not much publicity for the scheme.
About 1 km away, at the party’s main office Tilak Bhawan, there was little publicity for Nyay. There was a small board with the Congress symbol at the main door. The district president of the party, VK Shukla, said, “We are conducting multiple meetings and allotting areas among ourselves to do door-to-door campaigning on Nyay. Rahul ji has waived farmers’ loans in three states. People know he does what he says.”
In Sultanpur, about two hours away, 18-year-old Rihan Yasir, a first time voter, had a different view. “Where will they get the kind of money to give Rs 72,000 to everyone? They have said only 20% of the poorest families but there are more people who come below the poverty line. Such promises are only made for elections,” he said.
In Amethi constituency, the party’s main office in Gauriganj too didn’t promote the scheme. On its wall was painted the slogan – “Amethi ka MP, 2019 ka PM” (Amethi’s MP, 2019’s PM).
The Congress data analytics head, Praveen Chakravarthy, said there was no mass campaign for Nyay. “As a programme, Nyay is a targeted one. The party is reaching out to potential beneficiaries directly,” he said.
In Uttar Pradesh’s Fatehpur Sikri, Rahul Gandhi and party general secretary Priyanka Gandhi Vadra had launched a plan to publicise the scheme calling it “Nyay Yatra”.
The Congress planned to deploy buses equipped with state-of-the-art communication equipment phase by phase to tom-tom its achievements.
Along the Grand Trunk Road, the national highway towards Aligarh, an e-rickshaw equipped with loud speakers announces details of the scheme. Soni Verma, a roadside vendor selling corn, said, “This began from yesterday. Before this, not many were aware of it. Let’s see what happens. It will be hard to get traction now.”
In Chandapur village, which lies next to the Prime Minister’s adopted village Jayapur in Varanasi district, Vanita Kumari, a 20-year-old labourer at the local brick kiln said she had not heard of Nyay. “We need pukka makaan, water and good roads,” she said.
“Outreach has not been good,” a senior Congress leader in the party’s Lucknow headquarters said, requesting not to be named.
“It could have been our Brahmastra (trump card) but it was not used properly. We are running TV ads and jingles but the ~72,000 per year bit, which was the main substance, got lost somewhere. We are trying to create some buzz with the advertising,” he said.
At the launch of the party manifesto, the Congress had said that its 2019 Lok Sabha campaign would be a “360-degree cross platform campaign”, involving cinema spots, radio jingles, out-ofhome hoardings and digital screens, print advertisements and social media campaigns.
“Nyay Yatra’s concept was that we will send the buses phase wise. So we load it with 100-150 workers and send it across constituencies. The other idea was to make big leaders sit in those buses and send them to battlegrounds or swing assembly constituencies. Where they go and distribute pamphlets with prominent Congress promises on one side and details about Nyay on the other. The issue is that it is a bit late for the outreach and the problem is we do not have enough human and financial resources,” the leader quoted above said.
According to Sanjay Kumar, director of the Centre for the Study of Developing Societies, the Congress has not been able to get the kind of traction it had expected from the scheme.
“One issue is that it came a little late and Congress did not have sufficient time to campaign for it. There is a constant problem for the party that they do not have the kind of communication skills their opponents BJP have to be able to woo the voters. When you rule the country for a long time, trust deficit is another factor that you face with schemes like these,” he said.
First Published: May 05, 2019 08:19 IST
https://www.hindustantimes.com/lok-sabha-elections/lok-sabha-elections-2019-congress-plans-mega-outreach-on-nyay-scheme/story-7bJUQyFeiP1UtrcuaGFI2J.html
Congress’ NYAY scheme struggles with outreach

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A Beginner's Tutorial for Understanding WCF Instance Management - CodeProject 12,999,010 members (35,731 online)
C#WCFBeginner Stats
22K views504 downloads31 bookmarked
Getting same output shacha1-Sep-13 22:16
shacha1-Sep-13 22:16 I have tried your example but i am getting the same output for percall and persession i dont know why??
Re: Getting same output vipin580512-Feb-14 17:41
vipin580512-Feb-14 17:41 change the basichttp binding use sessionmode.allowed
Stuff Anurag Sinha V2-Apr-13 22:03
Anurag Sinha V2-Apr-13 22:03 Your articles are pretty good and easy to get along with...5 from me..

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Bent molecular geometry - Wikipedia
(Redirected from Bent (chemistry))
In chemistry, the term "bent" can be applied to certain molecules to describe their molecular geometry. Certain atoms, such as oxygen, will almost always set their two (or more) covalent bonds in non-collinear directions due to their electron configuration. Water (H2O) is an example of a bent molecule, as well as its analogues. The bond angle between the two hydrogen atoms is approximately 104.45°.[1] Nonlinear geometry is commonly observed for other triatomic molecules and ions containing only main group elements, prominent examples being nitrogen dioxide (NO2), sulfur dichloride (SCl2), and methylene (CH2).
This geometry is almost always consistent with VSEPR theory, which usually explains non-collinearity of atoms with a presence of lone pairs. There are several variants of bending, where the most common is AX2E2 where two covalent bonds and two lone pairs of the central atom (A) form a complete 8-electron shell. They have central angles from 104° to 109.5°, where the latter is consistent with a simplistic theory which predicts the tetrahedral symmetry of four sp3 hybridised orbitals. The most common actual angles are 105°, 107°, and 109°: they vary because of the different properties of the peripheral atoms (X).
Other cases also experience orbital hybridisation, but in different degrees. AX2E1 molecules, such as SnCl2, have only one lone pair and the central angle about 120° (the centre and two vertices of an equilateral triangle). They have three sp2 orbitals. There exist also sd-hybridised AX2 compounds of transition metals without lone pairs: they have the central angle about 90° and are also classified as bent.
3D Chem: Chemistry, Structures, and 3D Molecules
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This page was last edited on 14 September 2018, at 17:19 (UTC).

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