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N-3 polyunsaturated fatty acids reduce atrial fibrillation following coronary artery bypass graft surgery. Commentary. - PubMed - NCBI
Format: AbstractFormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListApplySend toChoose DestinationFileClipboardCollectionsE-mailOrderMy BibliographyCitation managerFormatSummary (text)Abstract (text)MEDLINEXMLPMID ListCSVCreate File1 selected item: 16380068FormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListMeSH and Other DataE-mailSubjectAdditional textE-mailDidn't get the message? Find out why...Add to ClipboardAdd to CollectionsOrder articlesAdd to My BibliographyGenerate a file for use with external citation management software.Create File
See comment in PubMed Commons belowEvid Based Cardiovasc Med. 2005 Dec;9(4):334-6. Epub 2005 Nov 2.N-3 polyunsaturated fatty acids reduce atrial fibrillation following coronary artery bypass graft surgery. Commentary.Forlani S1.Author information1Divisione di Cardiochirurgia, Policlinico Universitario Tor Vergata, Rome, Italy.Comment onN-3 Fatty acids for the prevention of atrial fibrillation after coronary artery bypass surgery: a randomized, controlled trial. [J Am Coll Cardiol. 2005]PMID: 16380068 DOI: 10.1016/j.ebcm.2005.09.012 [PubMed] SharePublication TypesPublication TypesCommentLinkOut - more resourcesFull Text SourcesElsevier SciencePubMed Commons home


text:
The ability of asymmetric dimethylarginine (ADMA) or monomethylarginine (L-NMMA) to block endothelium-dependent, nitric oxide-mediated relaxation in rat aorta is inversely related to the efficacy of the relaxant stimulus. - Semantic Scholar
The ability of asymmetric dimethylarginine (ADMA) or monomethylarginine (L-NMMA) to block endothelium-dependent, nitric oxide-mediated relaxation in rat aorta is inversely related to the efficacy of the relaxant stimulus.
Mohammed J Al-Zobaidy, William Martin
Previous work on rat aorta has shown that L-NMMA and ADMA each enhance vasoconstrictor-induced tone, consistent with blockade of basal nitric oxide activity, whereas they exert little inhibitory effect on acetylcholine-induced relaxation when tone is matched carefully to that of control tissues. The aim of this study was to determine if the ability of L… (More)
DOI: 10.1016/j.ejphar.2014.08.002
@article{AlZobaidy2014TheAO, title={The ability of asymmetric dimethylarginine (ADMA) or monomethylarginine (L-NMMA) to block endothelium-dependent, nitric oxide-mediated relaxation in rat aorta is inversely related to the efficacy of the relaxant stimulus.}, author={Mohammed J Al-Zobaidy and William Martin}, journal={European journal of pharmacology}, year={2014}, volume={741}, pages={171-7} }

type: global

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text:
Thousands of UK's poor in court over non-payment of council tax | Money | The Guardian
Thousands of UK's poor in court over non-payment of council tax
Courts across country fill up with people on lowest incomes as introduction of new council tax charges in April begins to bite
Southwark council has issued court summons for council tax arrears to 9,000 people. Photograph: Martin Godwin for the Guardian
Friday 18 October 2013 13.34 EDT
Last modified on Friday 18 October 2013 14.06 EDT
Hundreds of London's poorest and lowest-paid inhabitants attended a mass court hearing in south London on Friday, hoping to challenge non-payment of council tax orders issued by Southwark council, which had summonsed 5,800 people to attend.
The mass summons was one of a number of similarly large summonses issued nationwide over the past few weeks, as legal proceedings begin against unemployed and low-income people who have been unable to pay new council tax payments, introduced in April.
Around 400 attended court on Friday, most of them responding to a court summons for the first time, many of them anxious and angry about the process. Although the weekly payments appear low, averaging at around £2.50, those who attended gave detailed accounts of how this was a difficult sum to pay out of a minimum wage income, or out of benefit payments. All faced the additional £65 cost of the court summons, in addition to the council tax arrears.
Lisa Whitman, 33, a single mother who worked as a nursery nurse before her daughter was born, said: "I am short every week, after I've paid the bills and fed and clothed my daughter. This means I can't afford after-school activities for my daughter."
Until April, millions of people on low incomes in England paid no council tax, but this dispensation was removed as part of a package of cost-saving welfare reforms when the government cut the amount given to councils to reduce council tax liability for their poorest residents. Councils were given discretion to decide how much to charge low-income residents. In Southwark, previously exempt residents are now required to pay 15% of their council tax bill.
Duane Derby, 37, an unemployed painter and decorator, said he owed about £200, including the court costs. "How can I pay without the money?" he asked, waiting in line at Camberwell magistrates court to have his case processed by one of 22 council officials, who had set up makeshift desks in the waiting area. He is looking for work, but for the past six months has had his benefits sanctioned (cut), in punishment for failing to attend a job centre meeting. For the first two months, he received nothing, and is now receiving only about half the normal jobseeker's allowance rate. He says he missed the appointment because he did not have enough money for the bus fare. "The money goes on the first day – on gas, electricity, food, obviously, an arm and a leg for the launderette. It's not possible to save money to pay this."
Daniel Peters, 29, a pizza delivery man, owes a similar amount. He earns £120 a week and cannot see a way to pay the money he owes out of his wages. "I'm just trying to survive," he said. Ray Malone, 68, who lives in sheltered housing and was one of many who suspected he had mistakenly been sent the summons (the tax is not payable by pensioners), said: "I'm not paying anything. I'll go to jail before I pay. I'll do bread and water."
Many were muddled by the summons letter, which told them on page one that they should appear at 9.30am at the magistrates court, before informing them in huge block capitals on the third page that they did "not need to actually attend the court".
Sczerina Perot, a volunteer lawyer advising people on how to challenge the summons, said this was a "well-crafted" attempt to discourage thousands of people from turning up at the court. "But if you don't attend court, you automatically have a judgment made against you. It is an irritant for the court when people turn up," she said.
Joanna Kennedy, chief executive of Zacchaeus 2000, a poverty charity helping many of those in arrears to negotiate discretionary relief from payments, said: "Most people on a means-tested benefit haven't got enough to live on as it is, because benefits are set at the lowest level needed for survival, and now that benefit is being taxed. The poorest are bearing the brunt of government's policy to restrict welfare payments." Many of the people who came in to challenge the summons were unwell or had disabilities, she said. "It is very, very stressful to receive a court summons. Once a court order is obtained, the threat of the bailiffs follows."
At least 157,000 people have already have already been summonsed across the country, according to figures published by Labour this week, based on freedom of information requests to councils. The shadow secretary of state for communities and local government, Hilary Benn, described this as a "new poll tax": "Those affected – including tens of thousands of disabled people, war veterans, war widows and carers – are receiving court summonses that could ultimately result in some of them being sent to prison."
Alan Sandiford, 57, a former warehouse worker, currently unemployed because of ill health, attended court with his friend Gloria Bell for support. He owes £106.32 in unpaid council tax and a further £65 in court costs. He had a letter informing him that back payments would be deducted from his benefits payments at a rate of about £30 a month. He calculates that after rent, electricity and food, that will leave him with about £6 a week. "There's no money left from week to week," he said.
Bell said her friend had been very distressed to receive a court summons. "It is frightening to get a summons. He is lucky he has friends helping him. You can't sit there watching a man starve," she said.
Defending the decision to impose the charge, Richard Livingstone, the cabinet member for finance and resources for Southwark council, said: "Court action is a last resort for us and not something we relish, but relatively small missed payments for individuals of as little as £2.50 per week would add up to a big hole in the council's budgets for the coming years if we did nothing about this."
More than 270,000 poorest households in England face £80 council tax rise
Dozens more local authorities say they are reducing protection for vulnerable residents, research finds
Thousands in court for council tax arrears as benefit cuts hit home
Councils' bailiff use over tax arrears a concern, says Citizens Advice
The Tories cut funding for the poor – and won't rule out tax cuts for the rich

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POWER GENERATION, INC.;REEL/FRAME:022482/0740Effective date: 20081001Owner name: SIEMENS ENERGY, INC.,FLORIDAFree format text: CHANGE OF NAME;ASSIGNOR:SIEMENS POWER GENERATION, INC.;US-ASSIGNMENT DATABASE UPDATED:20100225;REEL/FRAME:22482/740Effective date: 20081001May 4, 2006ASAssignmentOwner name: SIEMENS POWER GENERATION, INC., FLORIDAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BRUMMEL, HANS-GERD;REEL/FRAME:017872/0434Effective date: 20060419RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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text:
Bosch Car & Truck Engines & Components for Volkswagen for sale | eBay
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BOSCH DRIVE BELT SET FOR Volkswagen Crafter 03.2007-1.2012 2.5L Turbo Diesel BJL
Pre-stretched polyester tension cords, fibre reinforced belt back and standard glass fibre tension cords ensure low maintenance and lateral stiffness. BOSCH DRIVE BELT SET. Belt Alt, P/S & W/P X 1. A/C BELT (ELASTIC FITTED LENGTH) X 1.
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2009 - 2014 Volkswagen Polo 1.2 TSI (6R) 81kw Hatchback Petrol 81. WA, SA, NT, and regional or remote areas may take longer.X CLOSE. 2005 - 2009 Volkswagen Polo 1.4 TDI (9N) 59kw Hatchback Diesel 59. 2005 - 2009 Volkswagen Polo 1.8 GTI (9N) 110kw Hatchback Petrol 110.
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Transporter 11.91 - 12.93 2.5 AAF. Caravelle 11.91 - 12.93 2.5 AAF. 11.92 - 12.93 2.5 AAF. VW (VOLKSWAGEN). IF YOU ARE UNABLE TO FIND YOUR TIMING BELT NUMBER OR ANY OTHER PART. BOSCH TIMING. Bosch Timing Belts .
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text:
+ £6.95 postage	Leighton Buzzard Through Time, New, Colin Ashby Book
+ £3.50 postage	Landranger 165: Aylesbury and Leighton Buzzard
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+ £0.40 postage	Aylesbury + Leighton Buzzard: Ordnance Survey Landranger Map 1:50000 #165 (M11)
Ordnance Survey OS Landranger Map 165 - Aylesbury & Leighton Buzzard
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2 1/2" Ordnance survey map SP92 LEIGHTON BUZZARD 1960
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Where?My current locationSearchSign In•JoinWrite a ReviewHomeDry Cleaners & Laundries near San Jose, CAOasis Laundry & Dry CleaningIn mybook® : Services Collection (edit)Added to your services collection.Removed from mybook!We took this business out of your services collection.Oasis Laundry & Dry CleaningAdd a PhotoView in gallery1380 N Winchester Blvd, San Jose, CA 95128(408) 243-0371OPEN NOWToday: 7:00 am - 10:00 pm26YEARS IN BUSINESSAdd to mybookThis listing has been added to mybook.This listing has been removed from mybook.ShareFACEBOOKGOOGLE +TWITTERemailsend to phoneSend to PhoneOasis Laundry & Dry Cleaning1380 N Winchester Blvd, San Jose, CA 95128(408) 243-0371Send this business listing as a text message to a mobile phone.I agree to the Terms and ConditionsCancelSendYour text message was sent.To opt out at anytime, send the word STOP to YP411.To get a help message, send the word HELP to YP411.There was an error sending your text.Please try again.Terms: The recipient of this text message may incur charges depending on their wireless carrier. Not all carriers are currently supported.E-MailOasis Laundry & Dry Cleaning1380 N Winchester Blvd, San Jose, CA 95128(408) 243-0371Send this business details to yourself or up to 5 friends.Up to 5 email addresses, separate addresses with a commaSend Yourself a CopyCancelSendVisit WebsiteEmail BusinessSuggest an EditBusiness DetailsCouponsGallery (1)Same Day ServiceBusiness Description* Specialized Commercial Laundry * Commercial Laundry * Service Available * Free Delivery * Same Day Service * Over 90 Machines * 60 / 35 Lb WashersHoursRegular HoursMon - Sun7:00 am - 10:00 pmServices/ProductsWhen It Comes to Clothing We Do It All: * Coin Laundry * Dry Cleaning * Full Service Wash-N-Fold * Pressing * Tailoring * Alterations Plus: * Big Screen TV * Snacks & Drinks * Large & Clean * Games & Pool TablePayment methodall major credit cardsNeighborhoodsCentral San Jose, CoryOther Linkhttps://www.mapquest.com/.../oasis-laundry-dry-cleaning-12035550CategoriesCommercial Laundries, Dry Cleaners & Laundries, Laundromats Other InformationWi-Fi: NoBike Parking: YesPrice Range : AverageCouponsNo coupons available at this time.GalleryView all (1)Photos (1)Map & DirectionsAboutAbout UsSite FeedbackContact UsAdvertise with UsCareers - We're HiringCorporate BlogEngineering BlogLegal

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Del Potro beats Gulbis to advance to quarterfinals of tennis event in Rotterdam | Fox News
Del Potro beats Gulbis to advance to quarterfinals of tennis event in Rotterdam
Print Juan Martin del Potro of Argentina returns a shot to Ernests Gulbis of Latvia at the ABN AMRO world tennis tournament at Ahoy Arena in Rotterdam, Netherlands, Thursday Feb. 14, 2013. (AP Photo/Ermindo Armino)
Juan Martin del Potro had 12 aces in a 7-6 (5), 6-3 win over Ernests Gulbis of Latvia, reaching his first quarterfinals of the year at the ABN AMRO tournament on Thursday.	The second-seeded Argentine will face Jarkko Nieminen, who beat Matthias Bachinger of Germany 6-3, 5-7, 6-3 at the Ahoy arena.	Marcos Baghdatis beat fourth-seeded Richard Gasquet 6-4, 6-4 to reach the quarterfinals. The unseeded Cypriot saved three break points and broke Gasquet once to take the first set.	He'll play Grigor Dimitrov of Bulgaria.	Advertisement

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Best Price on Holiday home Lærkealle F- 2562 in Ringkobing + Reviews!
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Holiday home Lærkealle F- 2562Kryle, Ringkobing, Denmark - View on mapExceptional9.2Based on1reviewHoliday home Lærkealle F- 2562See more photosSee more photosSee all 24 photos7.5 Very good locationView on map7.5LocationFeatures you'll loveFree Wi-Fi in all roomsSaunaCar park
See photosFour-Bedroom Holiday Home120 sq.m.4 bedroomsEnter dates to see prices
More about Holiday home Lærkealle F- 2562An overviewSet in Søndervig in the Midtjylland Region, this holiday home is 38 km from Holstebro. The unit is 10 km from Ringkøbing. Free WiFi is available throughout the property.
A dishwasher and a microwave can be found in the kitchen and there is a private bathroom. A TV and DVD player is offered. Other facilities at Holiday home Lærkealle F- 2562 include a sauna.
Billund Airport is 77 km from the property.Show moreWhat they offerInternet accessFree Wi-Fi in all roomsWi-Fi in public areas Getting aroundCar park Things to do, ways to relaxSauna Services and conveniencesSmoking area AccessPets allowed Available in all roomsComplimentary bottled waterHeatingWashing machineDishwasherMicrowave DVD/CD playerTV Show lessGuest policiesExtra beds are dependent on the room you choose. Please check the individual room capacity for more details.When booking more than 5 rooms, different policies and additional supplements may apply.Show moreAnnouncementsPlease note that:

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Patent US8008188 - Method of forming solid blind vias through the dielectric coating on high ... - Google Patents
A method is provided comprising: coating an electrically conductive core with a first removable material, creating openings in the first removable material to expose portions of the electrically conductive core, plating a conductive material onto the exposed portions of the electrically conductive core,...http://www.google.com/patents/US8008188?utm_source=gb-gplus-sharePatent US8008188 - Method of forming solid blind vias through the dielectric coating on high density interconnect substrate materials
Publication number US8008188 B2
Application number US 11/760,804
Also published as CN101743786A, CN101743786B, EP2163147A2, EP2496062A1, US8409982, US20080305626, US20110266156, WO2008154123A2, WO2008154123A3
Publication number 11760804, 760804, US 8008188 B2, US 8008188B2, US-B2-8008188, US8008188 B2, US8008188B2
Patent Citations (22), Referenced by (1), Classifications (29), Legal Events (5)
US 8008188 B2
US20020124398 May 9, 2001 Sep 12, 2002 Sturni Lance C. Multi-layer circuit assembly and process for preparing the same
US20020125040 Jul 9, 2001 Sep 12, 2002 Sturni Lance C. Multi-layer circuit assembly and process for preparing the same
US20020127494 Mar 8, 2001 Sep 12, 2002 Sturni Lance C. Process for preparing a multi-layer circuit assembly
US20030140490 Nov 8, 2002 Jul 31, 2003 Olson Kevin C. Multi-layer circuit assembly and process for preparing the same
US20050124196 Nov 11, 2004 Jun 9, 2005 Olson Kevin C. Single or multi-layer printed circuit board with improved via design
US20060141143 Nov 16, 2005 Jun 29, 2006 J Mccollum Gregory Method for creating circuit assemblies
WO2004004428A1 Jun 27, 2003 Jan 8, 2004 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
WO2004045262A1 Nov 7, 2003 May 27, 2004 Ppg Industries Ohio, Inc. Multi-layer circuit assembly and process for preparing the same
US8409982 * Jul 14, 2011 Apr 2, 2013 Ppg Industries Ohio, Inc. Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials
U.S. Classification 438/637, 257/E21.007, 257/E21.006, 257/E21.231, 438/618, 257/E21.058, 257/E21.347, 257/E21.134, 257/E21.329, 257/E21.17, 257/E21.077, 257/E21.32, 257/E21.278, 257/E21.293, 257/E21.027, 257/E21.267, 438/678
Cooperative Classification H05K3/44, H05K3/445, H05K3/4647, H05K2203/0733, H05K3/108, H05K2203/0582, H05K2201/09554, H05K3/388, H05K2203/135
European Classification H05K3/44, H05K3/44B


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Psc Jobs, Employment in Cohoes, NY
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Academia Brasileira de Letras Over the next quarter century Machado produced the five somewhat interlinked novels that made his reputation. Though foreign critics tend to regard the exuberantly nihilistic “Posthumous Memoirs of Brás Cubas,” published in 1881, as his masterpiece, many Brazilians prefer the more melancholy “Dom Casmurro” (1899), which focuses on the corrosive effect of sexual jealousy.
“As an English friend of mine said to me, he’s the best,” Roberto Schwarz, one of Brazil’s foremost experts on Machado, said in a telephone interview from São Paulo. “What you see in the five novels and his short stories from that period is a writer without illusions, courageous and cynical, who is highly civilized but at the same time implacable in exposing the hypocrisy of modern man accommodating himself to conditions that are intolerable.”From the time of silent movies, Machado’s work has been a favorite source for Brazilian filmmakers. The director Nelson Pereira dos Santos recently organized screenings of film adaptations of Machado’s work at the Brazilian Academy of Letters in Rio de Janeiro, which Machado helped found in 1897, and counts 25 such movies, 11 of which still have usable prints.
“When you first read Machado in school, you quickly realize that he is the master of our language, our Shakespeare, a real wizard with words,” Mr. Pereira dos Santos, who is 80, said. “And he is so up to date and psychologically astute. Even with the huge changes Brazilian society has experienced in my lifetime, Machado’s ability to grasp the essence of social relations and behavior, many of which are archaic but persist into the 21st century, makes him extremely relevant.”This week’s commemorations include the screening of two films at Lincoln Center as part of the Latinbeat festival, both of them directed by Mr. Pereira dos Santos. “Azyllo Muito Louco” is based on the short story “The Alienist,” while “Missa do Galo” is an adaptation of another tale, “Midnight Mass.”
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“He is a great ironist, a tragic comedian,” Mr. Roth said in an interview with the Brazilian newspaper Folha de S. Paulo. “In his books, in their most comic moments, he underlines the suffering by making us laugh. Like Beckett, he is ironic about suffering.”Others find parallels to Swift and Laurence Sterne. “He’s funny as hell, with an enormous debt to Sterne,” Mr. Bloom said of Machado in a phone interview. “In fact, he is so hilarious at times that when I go and re-read ‘Tristram Shandy,’ I can swear that Sterne has read Machado.”
Critics have wondered why it took so long for the English-speaking world to appreciate Machado. Mr. Bloom said he believed some early translations were “inadequate.” New versions appeared only in the 1990s, including several by Gregory Rabassa, who has also translated Gabriel García Márquez, Mario Vargas Llosa and Julio Cortázar from the Spanish.Translating Machado “was a lot of fun,” Mr. Rabassa said. “His Portuguese is fluent and fluid and classical, probably the best Portuguese prose ever done. But he had a sensibility that was ahead of his time, and maybe even ahead of our time; skeptical and not an idealist by any means.”Sontag, who wrote the introduction to Mr. Rabassa’s translation of “Brás Cubas,” argued that other handicaps also slowed Machado’s acceptance — including his writing from the “periphery” of Western culture in a language unjustly considered “minor.”For the most part, Brazilians have been delighted to see Machado’s prestige rising, though they too question why it took so long. And a few dissenters complain that the Machado now celebrated in the English-speaking world is a misrepresentation.Enthusiasts in the United States and Britain “are making Machado appear less and less like Machado,” the critic and author Antônio Gonçalves Filho argued last month at a symposium in São Paulo. “Actually, they are making the writer white, like Michael Jackson. All of a sudden, he’s become ‘universal.’ ”

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Patent US7119361 - Luminescence stabilization of anodically oxidized porous silicon layers - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface...http://www.google.com/patents/US7119361?utm_source=gb-gplus-sharePatent US7119361 - Luminescence stabilization of anodically oxidized porous silicon layersAdvanced Patent SearchTry the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents.Publication numberUS7119361 B2Publication typeGrantApplication numberUS 10/972,550Publication dateOct 10, 2006Filing dateOct 25, 2004Priority dateDec 10, 2001Fee statusLapsedAlso published asCA2413704A1, CA2413704C, US6814849, US20030106801, US20050085001Publication number10972550, 972550, US 7119361 B2, US 7119361B2, US-B2-7119361, US7119361 B2, US7119361B2InventorsDavid John Lockwood, Rabah Boukherroub, Danial D. M. Wayner, Nobuyoshi KoshidaOriginal AssigneeNational Research CouncilExport CitationBiBTeX, EndNote, RefManPatent Citations (6), Non-Patent Citations (11), Classifications (7), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetLuminescence stabilization of anodically oxidized porous silicon layers
US 7119361 B2Abstract
a porous silicon with region formed within said substrate, said porous silicon substrate having an anodically oxidized surface with oxidized and non-oxidized regions;
an organic stabilization layer attached to said anodically oxidized surface; and
an electrical contact layer over said porous silicon region.
2. An optoelectronic device as claimed in claim 1, wherein said organic layer is a monolayer.
3. An optoelectronic device as claimed in claim 2, wherein said organic monolayer is attached to said surface by Si—C, Si—O—C and Si—S—C bonds.
4. An optoelectronic device as claimed in claim 2, wherein said organic monolayer is a mixture of different organic molecules.
5. An optoelectronic device as claimed in claim 2, wherein said organic monolayer is a mixture of saturated and conducting molecules.
6. An optoelectronic device as claimed in claim 1, wherein said porous regions comprises a superficial layer overlying an active layer, and said organic layer is formed on said superficial and active layers.
7. An optoelectronic device as claimed in claim 1, wherein said electrical contact layer is an ITO contact electrode deposited on said superficial layer.
8. An optical, electronic, or optoelectronic sensor comprising a porous silicon structure having an anodically oxidized surface with oxidized and non-oxidized regions; and an organic layer attached to said anodically oxidized surface.
9. An optical, electronic, or optoelectronic sensor as claimed in claim 8, wherein said organic layer is a monolayer.
10. An optical, electronic, or optoelectronic sensor as claimed in claim 9, wherein said organic monolayer is attached to said surface by Si—C, Si—O—C and Si—S—C bonds.
11. An optical, electronic, or optoelectronic sensor as claimed in claim 9, wherein said organic monolayer is a mixture of different organic molecules.
12. An optical, electronic, or optoelectronic sensor as claimed in claim 9, wherein organic said monolayer is a mixture of saturated and conducting molecules.
13. In a method of sensing chemical and biological species, the improvement wherein said sensing is carried out with the aid of a sensor as claimed in claim 8.
This application is a division of U.S. patent application No. 10/012,943 filed Dec. 10, 2001 now Pat. No. 6,814,849.
Thermal oxidation of the PSi surface is one of the most widely studied reactions to achieve a high PL stability, but this method destroys the porous layer integrity. A. Bsiesy et al. Surf Sci. 254, 195 (1991) have found that post-anodization of freshly prepared PSi layers in KNO3 or H2SO4 followed by chemical dissolution in HF solutions can be used for thinning the PSi walls. They have also shown that partially oxidized porous layers exhibit a large increase in the PL and EL intensities. The electrochemical oxidation of PSi surfaces is a very convenient and cheap method and can easily be used for mass production. The rate of the oxidation can be readily controlled because the amount of the oxide formed on the surface is proportional to the exchanged charge.
Electrochemical anodization of the freshly prepared PSi surface is a method of passivation that retains the porous integrity of the layer. This approach has been successfiully used for building electroluminescent devices with a high external efficiency (>1%). The electrochemical reaction requires hole consumption. Upon anodic polarization, a supply of holes from the substrate allows the electrochemical oxidation to occur at both the PSi walls and the bottom of the porous layer. Oxidation of the bottom part of the porous layer, however, breaks the electrical contact with the substrate and causes the end of the oxidation reaction. During this process, only the Si—Si back-bonds are oxidized and the Si—H bonds are not affected. This reaction leads to a surface that contains oxidized regions and non-oxidized ones. Even though growing an oxide film on the PSi layer offers a good surface passivation, PL quenching still occurs over time.
According to the present invention there is provided a method of stabilizing a luminescent porous silicon structure comprising passivating said porous silicon structure by subiecting said porous silicon structure to anodic oxidation to form a passivated structure, said anodic oxidation leaving residual exposed Si—Hz bonds on said passivated structure in non-oxidized regions; and subsequently chemically modifying said passivated structure with an organic agent to consume at least some of said residual Si—Hg bonds and thereby protect said non-oxidized regions.
The chemical modification preferably takes place in the presence of 1-decene or an analog, such as functional alkenes and aldehydes, and at a temperature of the order of 90 to 120� C for about 1 to 24 hours, although the temperature and time can be varied. The EL stability is significantly improved by chemical modification even after short treatment of one hour. As the treatment time increases more, the stabilizing effect tends to saturate. Taking the associated reduction of the EL efficiency into account, the optimum chemical modification time exists in the range from 1 to 2 hours. Other suitable chemical reagents include alcohols, thiols, functional alkenes, and aldehydes. This step replaces the remaining silicon-hydrogen bonds, which are not oxidized during the electrochemical post anodization, with more stable silicon-carbon bonds.
Electrochemical oxidation of porous silicon (PSi) produces a surface that is not completely oxidized but in fact which is covered with native silicon-hydrogen (Si—Hz) bonds and regions with oxidized Si—Si back-bonds (OSi—Hx). These unprotected Si—Hg bonds remaining between islands of oxidized silicon may oxidize slowly at room temperature when exposed to ambient air and thus introduce surface defects responsible for PL quenching. In accordance with the invention the anodically oxidized PSi layers are chemically modified with an organic layer, preferably using 1-decene under thermal conditions, such that the monolayer is preferably attached by Si—C, Si—O—C, and Si—S—C bonds. The protected PSi layers have much greater stability than oxidized layers that have not been subjected to the chemical functionalization treatment.
FIGS. 1 a and 1 b show the transmission infrared Fourier-transform spectra of freshly prepared and anodized PSi in 1M H2SO4 for 5 min at 3 mA/cm2 a) before derivatization and b) after chemical modification with 1-decene;
FIG. 3 shows the photoluminescence spectrum of the PSi surface etched at 5 mA/cm2 in HF/EtOH=1/1 for 8 min a) before electrochemical anodization, and anodized in 1 M H2 SO 4 at 3 mA/cm2 for 5 min b) before derivatization and c) after chemical modification with 1-decene;
FIG. 4 shows the photoluminescence spectrum of the PSi surface etched at 5 mA/cm2 in HF/EtOH=1/1 for 8 min and anodized in 1M H2SO 4 at 5 mA/cm2 for 5 min a) before derivatization and b) after chemical modification with 1-decene;
The structure shown in FIG. 7 comprises a substrate 10 in which is formed a porous silicon region with an anodically oxidized surface comprising an active layer 12 and a superficial layer 14 of porous silicon. An organic monolayer 15 is attached to the surface of the porous silicon region. An ITO electrical contact layer 16 is deposited on the superficial layer 14. The active layer 12 serves as a light emitting layer.
In order to demonstrate the principles of the invention PSi layers were formed on Si(100) Boron p-type (1.48–1.84 ohm-cm) silicon wafers by electrochemical etching in HF/EtOH=1/1 for 8 min at a current density of 5 mA/cm2. The porosity was estimated to be 70% by an X-ray reflectivity technique and the porous layer thickness was about 2 μm (determined by cross-sectional SEM). After rinsing with ethanol, the freshly prepared PSi sample was anodically oxidized in 1M H2SO4 for 5 minutes at different current densities (1, 3, and 5 mA/cm2), rinsed with ethanol and dried under a stream of dry nitrogen.
The chemical modification of the PSi layers was achieved by immersing the freshly anodized sample in a deoxygenated solution of 1-decene and heating the solution for 24 hours at 120� C. The modified sample was then rinsed with heptane and 1,1, 1-trichloroethane to remove the unreacted 1-decene.
FIG. 1 a displays the IR spectrum of a freshly prepared sample after anodic oxidation in 1M H2SO4 for 5 min at 3 mA/cm2. Two types of Si—Hx vibrations can be observed: (Si)3−xSi—Hx+1 centered at 2125 cm−1 and (Si—O)3−xSi—Hx+1 (x=0—2) centered at 2252 cm−1.
The frequency shift of the second peak from 2125 cm−1 to 2252 cm−1 is caused by the oxidation of the Si—Si back-bonds. The PSi samples oxidized for 5 min at current densities of 1 or 5 mA/cm2 showed different degrees of oxidation. The first sample exhibited a very small peak at 2252 cm2 while the latter showed an intense peak. After reaction with 1-decene at 120� C. for 24 hours, new peaks due to the C—H vibrations and methylene bending modes of the alkyl chain at 2925 and 1463 cm−1 appear as shown in FIG. 1 b. The absence of the C═C double bond stretching at 1640 cm−1 and the decrease of the Si—H intensity is in agreement with a covalent attachment (not physi-absorption) of the organic molecules to the surface through Si—C bonds.
When the surfaces (oxidized for 3 or 5 min at 3 mA/cm2) modified with 1-decene were boiled in CCI4 and in ultra-pure water for one hour, there was no change in the Si—Hx IR intensity. This result shows the high stability of the modified surfaces.
This large increase of the PL intensity is assigned to an improvement of the barrier efficiency towards the non-radiative leaks. After reaction with 1-decene at 120� C. for 24 h, the PL intensity decreases by 25% (trace c). A similar effect was observed during the thermal modification with 1-decene of freshly prepared PSi samples that were not subjected to further electrochemical oxidation in sulfuric acid. When the surface was anodically oxidized at the same current density (3 mA/cm2) for 3 min, the PL intensity was not as bright as the one observed for the sample etched for 5 min. A similar but weaker effect was observed for the PSi sample anodized at 1 mA/cm2 for 5 min in 1M H2SO4. Only an increase by a factor of 1.6 of the original PL intensity (before anodization) was obtained. This insignificant increase may be attributed to the presence of small amounts of oxygen in the silicon back-bonds and incomplete oxidation of the narrower regions of the silicon nanocrystal.
A substrate in the form of an n+-Si (111) wafer with a resistivity of 0.018 Ωcm was cleaned in a solution of HNO3: HF:CH3CO2H in the ratio 1:1:1 for five minutes.
A superficial layer (200 nm thick) was then formed on the surface of the substrate by anodization in the dark in the presence of a solution of 10% of hydrofluoric acid at a current of 5 mA/cm2 for 30 s. Next an active layer (800 nm thick) was formed in the presence of a 40% solution of hydrofluoric acid (at 0� C.) at a current density of 3 mA/cm2 for 10 min under illumination at 1 W/cm2 with a tungsten lamp.
An electrochemical oxidation was then carried out with 1 M H2SO4 at a current density of 3 mA/cm2 for 3 min.
Next chemical modification of the surface was carried out with 1-decene [CH3(CH2)7CH: CH2 ] at 90� C. for one hour.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5644156 *Apr 12, 1995Jul 1, 1997Kabushiki Kaisha ToshibaPorous silicon photo-device capable of photoelectric conversionUS5834378 *Oct 1, 1996Nov 10, 1998Kulite Semiconductor Products, Inc.Passivation of porous semiconductors for improved optoelectronic device performance and fabrication of light-emitting diode bases on sameUS6225647 *Jul 27, 1998May 1, 2001Kulite Semiconductor Products, Inc.Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on sameUS6485986 *Nov 20, 2000Nov 26, 2002Purdue Research FoundationFunctionalized silicon surfacesUS20040198054 *Apr 23, 2004Oct 7, 2004National Research Council Of CanadaPassivation of porous semiconductorsJPH03198668A Title not available* Cited by examinerNon-Patent CitationsReference1"Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode", Bernard Gelloz et al., Journal of Applied Physics, vol. 88, No. 7, Oct. 2000, pp. 4319-4324.2"Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation", B. Gelloz et al., Appl.Phys.Lett, vol. 73, No. 14, Oct. 5, 1998, pp. 2021-2023.3"Fourier transform IR monitoring of porous silicon passivation during post-treatments such as anodic oxidation and contact with organic solvents", M.A. Hory et al., Thin Solid Films, 255, 1995 pp. 200-203.4"Photoluminescence and electroluminescence from electrochemically oxidized porous silicon layers", F. Muller et al., Journal of Luminescence, 57, 1993, pp. 283-292.5"Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers", A. Bsiesy et al., Surface Society, 254, 1991, pp. 195-200.6"Stabilization of porous silicon electroluminescence by surface capping with silicon dioxide films", N. Koshida et al., Mat. Res. Soc. Symp. Proc., vol. 638, 2001, F18.3.1-F18.3.6.7"Surface passivation: a critical parameter for the visible luminescence of electrooxidised porous silicon", L. Mihalcescu et al., Journal of Luninescence, 57, 1993, pp. 111-115.8"Visible electroluminescence from porous silicon", Nobuyoshi Koshida et al., Apply.Phys.Lett., vol. 60, No. 3, Jan. 20, 1992, pp. 347-349.9Enhancing efficiency and stability of porous silicon electroluminescence using electrochemical techniques:, B. Gelloz et al., Electrochemical Society Proceedings, vol. 99-22, pp. 27-34.10Enhancing the external quantum efficiency of porous silicon leds beyond 1% by a post-anodization electrochemical oxidation, B.Gelloz et al., Mat.Res.Soc.Symp-Proc., vol. 536, 1999, pp. 15-20.11Ideal passivation of luminescent porous silicon by thermal, noncatalytic reaction with alkenes and aldehydes:, R. Boukherroub et al., Chem. Mater, vol. 13, No. 6, 2001, pp. 2002-2011.Classifications U.S. Classification257/40, 257/103, 257/3International ClassificationH01L29/08, C25D11/32Cooperative ClassificationC25D11/32European ClassificationC25D11/32Legal EventsDateCodeEventDescriptionApr 8, 2010FPAYFee paymentYear of fee payment: 4May 23, 2014REMIMaintenance fee reminder mailedOct 10, 2014LAPSLapse for failure to pay maintenance feesDec 2, 2014FPExpired due to failure to pay maintenance feeEffective date: 20141010RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services


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floral dress 22 | eBay
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Ugandan Super League - Wikipedia, the free encyclopedia
(Redirected from Ugandan Premier League)
2009 Ugandan Super League logo
Villa SC (16)
2014-15 Uganda Super League
The Ugandan Super League is the top division of the Federation of Uganda Football Associations.[1] The league's roots date back to 1968 when the National First Division League was established.[2]
1.2 Super League advent
1.3 Match-fixing
2 FUFA Super League
2.1 Participants and locations
The genesis of club football in Uganda was an idea copied from England by Balamaze Lwanga and Polycarp Kakooza. The objective was to improve Uganda's performances in the Africa Cup of Nations after disappointing results in the finals in 1962 (fourth place finish) and 1968 (lost all three group stage matches), both held in Ethiopia. The intention was to start a Uganda National League (the forerunner of the Uganda Super League) to create the foundation for a strong national team. At the same time, the identification of players from the grassroots would be made easier and systematic. [3]
Because there were no clubs to form a league, institutions and districts were contacted to form teams. The 1968 inaugural top flight league was composed of Prisons, Army, Coffee, Express, Jinja, Masaka, Mbarara, and Mbale. There were three institutions and four districts and one club.[3] The league was known as the National First Division League, and the first league champions were Prisons FC Kampala (now known as Maroons FC).[2]
After four seasons, the political turbulence in Uganda impacted on the league. The 1972 and 1973 championship were not completed because of civil unrest. In 1974, the league became known as the National Football League and this title was used until 1982 when the league was trimmed to ten teams and was renamed the Super League (shortened to Super Ten in that inaugural season).[2]
Super League advent[edit]
The emergence of the Super League in 1982 saw the development of Sports Club Villa as the country's leading club. Through the 1980s and a good part of the 1990s, competition between Express FC, Kampala City Council FC (KCC) and SC Villa lit up the league and fans attended in hoards.[4]
SC Villa won the league for the first time in 1982 and over the next 22 years totalled 16 league titles. Kampala City Council FC and Express FC won the championship title in the intervening years.
In 2003, football in Uganda hit its lowest ebb as Villa put 22 goals past Akol FC when the league title went down to goal difference with Express. This was one of the biggest scandals in Ugandan football and thereafter, there was a complete media shutdown in all matters pertaining to local football.[4] Fans became increasingly disillusioned and deserted the stadia thus affecting the teams financially. [5]The episode represented one of many that has plagued Ugandan football.[6]
FUFA Super League[edit]
The 2014-15 FUFA Super League is being contested by 16 teams, including Sadolin Paints FC, Lweza FC and KJT-Rwenshama FC who were promoted from the Ugandan Big League at the end of the 2013/14 season.
Participants and locations[edit]
Capacityhsj

value: This website is the English-language edition of the free online encyclopedia Wikipedia. It was founded on 15 January 2001 as Wikipedia's first edition and, as of October 2021, has the most articles of any edition, at 6,412,521.


text:
Patent US7408338 - Handler for testing semiconductor devices - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsA handler for testing semiconductor devices is disclosed which is capable of simplifying the process carried out in an exchanging station, namely, the process of loading/unloading semiconductor devices in/from test trays, and greatly increasing the number of simultaneously testable semiconductor devices....http://www.google.com/patents/US7408338?utm_source=gb-gplus-sharePatent US7408338 - Handler for testing semiconductor devicesAdvanced Patent SearchPublication numberUS7408338 B2Publication typeGrantApplication numberUS 11/713,683Publication dateAug 5, 2008Filing dateMar 5, 2007Priority dateMar 22, 2005Fee statusLapsedAlso published asDE102005036977A1, US7196508, US20060214655, US20070152655Publication number11713683, 713683, US 7408338 B2, US 7408338B2, US-B2-7408338, US7408338 B2, US7408338B2InventorsChul Ho Ham, Ho Keun Song, Young Geun Park, Woo Young Lim, Jae Bong SeoOriginal AssigneeMirae CorporationExport CitationBiBTeX, EndNote, RefManPatent Citations (4), Referenced by (7), Classifications (7), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetHandler for testing semiconductor devices
US 7408338 B2Abstract
an exchanging station comprising a vertical moving unit for vertically moving a selected one of the test trays between a standby place and a working place respectively defined at lower and upper positions in the exchanging station, and a horizontal moving unit for horizontally moving the test tray by a predetermined pitch at the working place, the exchanging station performing a process for loading the semiconductor devices in the carriers of the test tray or unloading the semiconductor devices from the carriers of the test tray while moving the test tray by the predetermined pitch;
a test station in which at least one test board having a plurality of test sockets to be electrically connected with semiconductor devices is mounted, the test station performing a test while connecting the semiconductor devices in one of the test trays, which is fed from the exchanging station to the test station, to the test sockets;
a plurality of buffers arranged between the loading station and the exchanging station and between the exchanging station and the unloading station, and adapted to receive the semiconductor devices to be tested and the tested semiconductor devices to allow the received semiconductor devices to be in a temporal standby state;
at least one first picker which is movable between the loading station and loading ones of the buffers and between unloading ones of the buffers and the unloading station, to transfer the semiconductor devices to be tested and the tested semiconductor devices; and
at least one second picker which is movable between the loading buffers and the exchanging station and between the exchanging station and the unloading buffers, to transfer the semiconductor devices to be tested and the tested semiconductor devices;
first and second tray buffers arranged at opposite sides of the standby place of the exchanging station, respectively;
tray shifters each adapted to horizontally transfer the test tray between the exchanging station and an associated one of the first and second tray buffers; and
2. The handler according to claim 1, wherein the tray transfer unit comprises:
3. The handler according to claim 1, wherein the tray transfer unit comprises:
a first rotator arranged between the first tray buffer and a preheating chamber of the test station such that the rotator is pivotable through an angle of 90� to transfer the test tray arranged in a horizontal state on the first tray buffer to the test station after changing the test tray from the horizontal state to a vertical state; and
a second rotator arranged between the second tray buffer and a defrosting chamber of the test station such that the rotator is pivotable through an angle of 90� to transfer the test tray arranged in the vertical state in the test station to the second tray buffer after changing the test tray from the vertical state to the horizontal state.
4. The handler according to claim 1, wherein the at least one first picker comprises a plurality of pickers adapted to transfer the semiconductor devices while moving independently.
5. The handler according to claim 1, wherein the at least second picker comprises:
at least one first short picker which is reciprocally movable between the loading buffers and the exchanging station, to transfer the semiconductor devices to be tested; and
at least one second short picker which is reciprocally movable between the unloading buffers and the exchanging station, to transfer the tested semiconductor devices.
6. The handler according to claim 5, wherein:
the at least one first short picker comprises two pickers which are independently horizontally movable; and
the at least one second short picker comprises two pickers which are independently horizontally movable.
7. The handler according to claim 1, wherein the first picker has a semiconductor device pitch variable between a semiconductor device pitch in the loading station and a semiconductor device pitch in the buffers.
8. The handler according to claim 1, wherein the test station comprises:
a defrosting chamber for returning the semiconductor devices tested in the test chamber to a room temperature state, the defrosting chamber including a heating or cooling atmosphere forming unit adapted to heat or cool the interior, of the defrosting chamber to a predetermined temperature.
9. The handler according to claim 8, wherein the at least one test board comprises two test boards arranged in two layers at the rear portion of the test chamber, respectively, to enable the semiconductor devices of two test trays to be tested.
10. The handler according to claim 1, wherein each of the test trays comprises:
11. The handler according to claim 9, wherein each of the test trays comprises:
12. The handler according to claim 11, wherein the carrier absent region of each test tray supplied to an upper one of the two layers in the test chamber and the carrier absent region of each test tray supplied to a lower one of the two layers in the test chamber are arranged at different positions, respectively.
13. The handler according to claim 12, wherein the carrier region and carrier absent region of each test tray supplied to the upper layer in the test chamber are arranged opposite to the carrier region and carrier absent region of each test tray supplied to the lower layer in the test chamber.
14. The handler according to claim 13, wherein the carrier absent region of each test tray supplied to the upper layer in the test chamber is arranged at an upper portion of the upper-layer test tray, and the carrier absent region of each test tray supplied to the lower layer in the test chamber is arranged at a lower portion of the lower-layer test tray.
This application claims priority to the filing dates of Korea Patent Application Nos. 2005-23621 and 2005-23622, both filed on Mar. 22, 2005, which are hereby incorporated by reference as if fully set forth herein. This application is also a divisional of U.S. application Ser. No. 11/196,266, which was filed Aug. 4, 2005 now U.S Pat. No. 7,196,508.
Since the test trays Tn1 and Tn2 are provided with carriers C only at regions thereof corresponding to the reduced test region S2, respectively, carrier absent regions A1 and A2 where no carriers are mounted are formed at the remaining regions of the test tray Tn1 and Tn2, respectively.
In this embodiment, in the test tray Tn1 to be fed to the upper test board 74U (FIG. 4), the carrier absent regions A1 are formed at the upper portion of the test tray Tn1. On the other hand, in the test tray Tn2 to be fed to the lower test board 74L (FIG. 4), the carrier absent regions A2 are formed at the upper portion of the test tray Tn2.
That is, the carrier absent regions A1 and A2 of the test trays Tn1 and Tn2, which are fed to the upper and lower test boards 74U and 74L, respectively, are arranged opposite to each other.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS6259247Sep 25, 2000Jul 10, 2001Advantest Corp.Method of transferring IC devices on test handlerUS6522125May 11, 1999Feb 18, 2003Advantest CorporationTray transfer arm, electronic component testing apparatus and tray transfer methodUS6590383 *Aug 7, 2002Jul 8, 2003Advantest CorporationContact arm and electronic device testing apparatus using the sameUS6882141 *Jan 9, 2004Apr 19, 2005Mirae CorporationSorting handler for burn-in tester* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS7696745 *Mar 20, 2008Apr 13, 2010Techwing Co., Ltd.Operating method of test handlerUS7876117 *Feb 2, 2010Jan 25, 2011Techwing., Co. LtdOperating method of test handlerUS7898271 *Apr 20, 2009Mar 1, 2011TechWing., Co., Ltd.Position changing apparatus for test handler and power transferring apparatusUS8793008 *Feb 9, 2010Jul 29, 2014Siemens AktiengesellschaftMethod for determining fittings for constant tables of automatic placement machinesUS20120004762 *Feb 9, 2010Jan 5, 2012Petra BauerMethod for determining fittings for constant tables of automatic placement machinesUS20120076631 *Jul 20, 2011Mar 29, 2012Hon Hai Precision Industry Co., Ltd.Feeding deviceUS20120194214 *Jan 31, 2012Aug 2, 2012Samsung Electronics Co., Ltd.Equipment and method to classify semiconductor packages* Cited by examinerClassifications U.S. Classification324/757.01, 324/762.01, 324/756.02International ClassificationG01R31/28Cooperative ClassificationG01R31/2893, G01R31/2867European ClassificationG01R31/28G6Legal EventsDateCodeEventDescriptionSep 25, 2012FPExpired due to failure to pay maintenance feeEffective date: 20120805Aug 5, 2012LAPSLapse for failure to pay maintenance feesMar 19, 2012REMIMaintenance fee reminder mailedRotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services


text:
Paje Beach - 19.5 miles
Slave Market - 37.6 miles
Nestled on the beach, this Kizimkazi lodge is 1.5 mi (2.4 km) from Kizimkazi Beach and 12.3 mi (19.7 km) from Jambiani Beach. Paje Beach and Jozani Forest Reserve are also within 20 mi (32 km).

value: This website is an online travel agency owned by Expedia Group, an American online travel shopping company based in Seattle.


text:
jarek leo • Contributing Member • Posts: 958
Sony a6000 Sony Alpha a7R II Nikon D850
fabbui • Regular Member • Posts: 146
In reply to jarek leo • 8 months ago
No, my only issue is that I am using a slow SD card (waiting for the XQD) and when the buffer is filled, it stops taking any picture, so I have to wait some time to get more pictures.. would that be your issue ? (and I am not using the 7 fps speed but saving full size raw)
fabbui's gear list:fabbui's gear list
Nikon D5000 Nikon D850 Tamron 15-30mm F2.8 Tamron SP 150-600mm F5-6.3 Di VC USD G2 Tamron SP 24-70mm F2.8 G2
Laci55 • Senior Member • Posts: 2,015
Absolutely no problem with mine.
www.imaginestudio.smugmug.com
Canon EOS-1D X Canon EOS-1D Mark IV Nikon D5 Canon EOS 5DS R Canon EOS-1D X Mark II +19 more
xGumbyx • Regular Member • Posts: 172
In reply to Laci55 • 8 months ago
Have not seen that issue here using the same Lexar XQD as you as well as a 128GB Sony G series
baker21 • New Member • Posts: 9
I own the nikon D750 and I am having a similar issue. I sent it in to get fixed however, the camera would simply freeze while shooting... I would try changing modes, turning it off and on and it still would stay frozen..
I hope they are able to fix this issue with the recall but its scary to hear that same thing is now happening with the d850, which is something i was seriously considering investing in..
With the D750 getting repaired as we speak now, I jsut got off the phone with a nikon rep to further elaborate the issue..
Seems like nikons email support, ticket support, and any type of support is completely down and has been for weeks.. Only way is to call them and then I dont know if she even is going to update what I said to the order.. No confirmation or anything like that..
She said they test the cameras before sending back but I explained to her and doesnt happen all the time... but if they shot enough it would happen..
the screen just freezes, youc ant AF or do anything.. u try changing modes, an turning on and off its still frozen... take out batteries and then change modes and maybe after 5 - 10 tries it will work again..
I just shot a wedding and had so many issues with this camera I literally had to shoot with something else... just ridiculous to be honest b/c nikon is suppose to be superior QUALITY... I am interested to know if this happening on the d850 also as I can confirm it is happening on the d750 also..
Sony RX10 III Sony Alpha a7S Nikon D5500 Nikon D750 Tamron SP 24-70mm F2.8 Di VC USD +11 more
In reply to baker21 • 8 months ago
baker21 wrote:
There is no reason for this statement, it has happened to ONE person as of this time. No need to overreact.
DWM • Forum Member • Posts: 89
In reply to xGumbyx • 8 months ago
Troll with only one post.
DWM's gear list:DWM's gear list
Sony RX100 II Panasonic Lumix DMC-G7 Nikon D800E Panasonic G85
Over 6000 frames on my 850 and not one glitch or problem. My first thought after reading your post was a card issue, but since you are having problem with another XQD card, then that doesn't sound likely. Have you tried swapping the battery for another ?? Also, which lens are you using. Problem with other lenses also ??
ASMP Professional Member, APA National Member
Instructor, Santa Fe Photographic Workshops
Laslo Varadi • Veteran Member • Posts: 5,012
Ignore the troll with one post who does not even have a D850. If there was an known issue you would have seen many posts by now.
Nikon D850 Sony Alpha a7 III Nikon D750 Nikon AF-S Nikkor 50mm f/1.8G Nikon 85mm F1.8G +8 more
clickclack • Regular Member • Posts: 433
It is probably in vain, but you could try the "Two-Button Reset" to restore the default settings?
If it is a rental, you also never know what happened to the camera before?...
As the troll used the word recall for this problem: No there haven't been any for this - ever...
OP jarek leo • Contributing Member • Posts: 958
In reply to fabbui • 8 months ago
Definitely not. This happens with the fastest XQD card and not in bursts but in single drive mode from time to time.
fabbui wrote:
In reply to Tony Bonanno • 8 months ago
I thought this was a card issue, as I used old SD card - which has never given me any problem in Nikon Df, Nikon D810 and Sony A7R II - but now the issue happens with a fast XQD card. I was only given one battery with the loaned camera but I will ask for another one and try what you have suggested. I have tested three lenses so far and this happens with all of them - Sigma 50mm f/1.4 ART, Nikkor 85mm f/1.4 AF-D and AF-S Nikkor 70-200mm f/2.8G VRII. The issue is not related to whether I take single shots or bursts,
In reply to clickclack • 8 months ago
I will try the "Two-Button Reset". No history before me as I was loaned a brand new camera for the test. I absolutely love the camera and the problem is so rare that the first impressions review I did at my blog does not even mention the issue because I discovered it later. It is intermittent as I wrote in the original post and I only discovered it when trying to review a shot I have taken. When the camera works it works perfectly. And then after one shot it freezes completely but just the flip of the on-off switch to "illuminate" position wakes it up. Someone suggested something I find hard to believe - and issue with spring-loaded power on-off switch mechanism. Has anybody heard about such issue wiith other Nikons? I have had a lot Nikon DSLRs - from D2X, D80, through D3, D3s, to Df, D800 and D810 and have never had a single issue.
Re: No problem here either
In reply to Laslo Varadi • 8 months ago
I am at a loss as to who you are calling a troll: me or some other poster. Anyway, to prove that I am using the D850 I am posting some images taken with it resized for the web. I think it is a fabulous camera; I am surprised to find any glitch at all as I have had none with any Nikon camera in 12 years.
I am at a loss as to who you are calling a troll
Don't worry - it is the guy with one post (baker21).
OK, got it! And thanks.
d750guy • Contributing Member • Posts: 985
Test it without a card.
In reply to d750guy • 8 months ago
I had the same problem with my D500 and the Lexar XQD card. I removed the card and used only the ultra fast SD card and no more problems. Lexar replaced the XQD card and it works fine. I have switched to buying only Sony G series XQD cards.
Which SD card would you recommend?
You never mentioned the lens

value: This website is a website about digital cameras and digital photography, established in November 1998. The website provides comprehensive reviews of digital cameras, lenses and accessories, buying guides, user reviews, and forums for individual cameras, as well as general photography forums.


text:
Words containing chargeda | Words that contain chargeda
https://www.thefreedictionary.com/words-containing-chargeda
Dictionary, Encyclopedia and Thesaurus - The Free Dictionary 10,836,256,297 visitors served
Found 1 words containing chargeda. Browse our Scrabble Word Finder, Words With Friends cheat dictionary, and WordHub word solver to find words that contain chargeda. Or use our Unscramble word solver to find your best possible play! Related: Words that start with chargeda
15 letter words containing chargedaSee also
15 letter words containing chargeda

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text:
No. 2 Man at F.B.I., Important Manager, Retires This Month - The New York Times
U.S.|No. 2 Man at F.B.I., Important Manager, Retires This Month
No. 2 Man at F.B.I., Important Manager, Retires This Month
September 11, 1997, Section A, Page 29Buy Reprints
The Director of the Federal Bureau of Investigation, Louis J. Freeh, said today that his second in command, William J. Esposito, was retiring from the bureau after playing an important managerial role in some of its most prominent recent cases.
Mr. Esposito helped direct the investigation into the Unabom serial pipe bombing case; the capture of Mir Amil Kansi, who is accused of killing two people outside the Central Intelligence Agency 1993, and the manhunt for the fugitive Andrew Cunanan.
Mr. Esposito is leaving at the end of the month to become a senior vice president and corporate security director of MBNA America, a financial institution and subsidiary of the MBNA Corporation based in Wilmington, Del.
Mr. Esposito, who has had a 33-year career at the F.B.I., worked as an agent in field offices in Detroit, New Orleans and Cleveland, where he was awarded a medal of valor for disarming a bank robber carrying explosives.
After being appointed to head the F.B.I.'s office in San Diego in 1992, Mr. Esposito became a leading figure in the bureau's efforts to combat drug smuggling in the Southwest.
Later, he returned to the F.B.I.'s headquarters, supervising some of the bureau's core enforcement efforts against organized crime, health care fraud, white-collar crime, violent crime and narcotics trafficking.
Mr. Esposito, who was born and reared in New York City, grew into a powerful force in the internecine struggles that grip the F.B.I. from time to time. As Mr. Freeh's fourth deputy director, Mr. Esposito became a force for greater openness after the Director's initial efforts to lower the bureau's profile.


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See comment in PubMed Commons belowJ Allergy Clin Immunol. 2011 Mar;127(3):654-60. doi: 10.1016/j.jaci.2010.12.1111.A randomized controlled study of peanut oral immunotherapy: clinical desensitization and modulation of the allergic response.Varshney P1, Jones SM, Scurlock AM, Perry TT, Kemper A, Steele P, Hiegel A, Kamilaris J, Carlisle S, Yue X, Kulis M, Pons L, Vickery B, Burks AW.Author information1Department of Pediatrics, Division of Allergy and Immunology, Duke University Medical Center, Durham, NC, USA.AbstractBACKGROUND: Open-label oral immunotherapy (OIT) protocols have been used to treat small numbers of patients with peanut allergy. Peanut OIT has not been evaluated in double-blind, placebo-controlled trials.OBJECTIVE: To investigate the safety and effectiveness of OIT for peanut allergy in a double-blind, placebo-controlled study.METHODS: In this multicenter study, children ages 1 to 16 years with peanut allergy received OIT with peanut flour or placebo. Initial escalation, build-up, and maintenance phases were followed by an oral food challenge (OFC) at approximately 1 year. Titrated skin prick tests (SPTs) and laboratory studies were performed at regular intervals.RESULTS: Twenty-eight subjects were enrolled in the study. Three peanut OIT subjects withdrew early in the study because of allergic side effects. During the double-blind, placebo-controlled food challenge, all remaining peanut OIT subjects (n = 16) ingested the maximum cumulative dose of 5000 mg (approximately 20 peanuts), whereas placebo subjects (n = 9) ingested a median cumulative dose of 280 mg (range, 0-1900 mg; P < .001). In contrast with the placebo group, the peanut OIT group showed reductions in SPT size (P < .001), IL-5 (P = .01), and IL-13 (P = .02) and increases in peanut-specific IgG(4) (P < .001). Peanut OIT subjects had initial increases in peanut-specific IgE (P < .01) but did not show significant change from baseline by the time of OFC. The ratio of forkhead box protein 3 (FoxP3)(hi): FoxP3(intermediate) CD4+ CD25+ T cells increased at the time of OFC (P = .04) in peanut OIT subjects.CONCLUSION: These results conclusively demonstrate that peanut OIT induces desensitization and concurrent immune modulation. The current study continues and is evaluating the hypothesis that peanut OIT causes long-term immune tolerance.Copyright © 2011 American Academy of Allergy, Asthma & Immunology. Published by Mosby, Inc. All rights reserved.PMID: 21377034 [PubMed - indexed for MEDLINE] PMCID: PMC3060783 Free PMC ArticleShareImages from this publication.See all images (5)Free textFigure 1Cumulative amount of peanut protein ingested at OFC by peanut OIT and placebo subjects (*p<0.001) following 12 months of therapyIndividual subjects are shown as diamonds (peanut OIT) or squares (placebo); lines designate median values.A randomized controlled study of peanut oral immunotherapy (OIT): clinical desensitization and modulation of the allergic responseJ Allergy Clin Immunol. ;127(3):654-660.Figure 2Titrated skin prick testingChange in median wheal size from baseline to time of OFC in peanut OIT and placebo subjects (*p<0·001). Boxes represent 25-75% quartiles; whiskers represent range. Lines designate median values.A randomized controlled study of peanut oral immunotherapy (OIT): clinical desensitization and modulation of the allergic responseJ Allergy Clin Immunol. ;127(3):654-660.Figure 3Changes in serum immunoglobulin levels during treatment with peanut OIT and placebo(a) Peanut-specific IgE. (*p≤0.01). (b) Peanut-specific IgG. (*p<0.05). (c) Peanut-specific IgG4. (*p≤0.001). Boxes represent 25-75% quartiles; whiskers represent range. Lines designate median values.A randomized controlled study of peanut oral immunotherapy (OIT): clinical desensitization and modulation of the allergic responseJ Allergy Clin Immunol. ;127(3):654-660.Figure 4Changes in secreted cytokine responses for subjects receiving peanut OIT and placeboPBMCs were cultured with peanut protein for 72 hours; cytokines were measured via ELISA. (a) IL-5. (*p≤0·02). (b) IL-13. (*p≤0·03).A randomized controlled study of peanut oral immunotherapy (OIT): clinical desensitization and modulation of the allergic responseJ Allergy Clin Immunol. ;127(3):654-660.Figure 5Change in FoxP3 hi: FoxP3 intermediate CD4+CD25+ T cells from baseline to time of OFCPBMCs were stimulated with crude peanut extract and tetanus toxin for 7 days, and then stained for Treg markers. Individual subjects are shown for (a) peanut OIT and (b) placebo groups. *p=0.04.A randomized controlled study of peanut oral immunotherapy (OIT): clinical desensitization and modulation of the allergic responseJ Allergy Clin Immunol. ;127(3):654-660.Publication Types, MeSH Terms, Grant SupportPublication TypesClinical TrialRandomized Controlled TrialResearch Support, N.I.H., ExtramuralResearch Support, Non-U.S. Gov'tMeSH TermsAdministration, OralAdolescentChildChild, PreschoolDesensitization, ImmunologicFemaleHumansHypersensitivity/immunology*Hypersensitivity/therapy*Immunotherapy*InfantMalePeanut Hypersensitivity/immunology*Peanut Hypersensitivity/therapy*Grant Support1 R01-AI06874-01A1/AI/NIAID NIH HHS/United States1 UL1 RR024128-01/RR/NCRR NIH HHS/United StatesK08 AI077932/AI/NIAID NIH HHS/United StatesR01 AI068074/AI/NIAID NIH HHS/United StatesR01 AI068074-01A1/AI/NIAID NIH HHS/United StatesT32 AI007062/AI/NIAID NIH HHS/United StatesT32 AI007062-28A2/AI/NIAID NIH HHS/United StatesLinkOut - more resourcesFull Text SourcesElsevier ScienceClinical KeyEurope PubMed Central - Author ManuscriptOvid Technologies, Inc.ProQuestPubMed Central - Author ManuscriptPubMed Central Canada - Author ManuscriptOther Literature SourcesCOS Scholar UniverseAccess more work from the authors - ResearchGateCited by Patents in - The LensMedicalClinicalTrials.govAllergy - MedlinePlus Health InformationMiscellaneousSee the articles recommended by F1000Prime's Faculty of more than 5,000 expert scientists and clinical researchers. - Faculty of 1000PubMed Commons home

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