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Patent USD634290 - Handset - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Advanced Patent Search | Sign inAdvanced Patent SearchPatentswww.google.comhttp://www.google.com/patents/USD634290?utm_source=gb-gplus-sharePatent USD634290 - HandsetPublication numberUSD634290 S1Publication typeGrantApplication numberUS 29/353,564Publication dateMar 15, 2011Filing dateJan 11, 2010Priority dateJan 11, 2010Also published asUSD645442Publication number29353564, 353564, US D634290 S1, US D634290S1, US-S1-D634290, USD634290 S1, USD634290S1InventorsBoris LandwehrOriginal AssigneeNokia CorporationNon-Patent Citations (9), Classifications (1) External Links: USPTO, USPTO Assignment, EspacenetHandsetUS D634290 S1Images(6) Claims(1) The ornamental design for a handset, as shown and described.
Non-Patent CitationsReference1 *LG GC900 Viewty Smart telephone, announced Apr. 2009, [online], [site visited Sep. 22, 2010]. Available from Internet, <URL: http://www.gsmarena.com>.2Nokia 5800 Xpress Music, Nokia Corporation, 1 color sheet of photographs, disclosed on or about Oct. 2008.3 *Nokia E7 telephone, announced Sep. 2010, [online], [site visited Sep. 22, 2010]. Available from Internet, <URL: http://www.gsmarena.com>.4 *Nokia N8 telephone, announced Apr. 2010, [online], [site visited Sep. 22, 2010]. Available from Internet, <URL: http://www.gsmarena.com>.5Nokia N810 WiMax, Nokia Corporation, 1 color sheet of photographs, disclosed on or about Jun. 2008.6Nokia N95, Nokia Corporation, 1 color sheet of photographs, disclosed on or about Aug. 2007.7 *Nokia X6 telephone, announced Sep. 2009, [online], [site visited Sep. 22, 2010]. Available from Internet, <URL: http://www.gsmarena.com>.8 *Sony Ericsson XPERIA X10 telephone, announced Nov. 2009, [online], [site visited Sep. 22, 2010]. Available from Internet, <URL: http://www.gsmarena.com>.9 *Sony Ericsson XPERIA X2 telephone, announced Sep. 2009, [online], [site visited Sep. 22, 2010]. Available from Internet, <URL: http://www.gsmarena.com>.* Cited by examinerClassifications U.S. ClassificationD14/138.00GRotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

type: global


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Earthquake Location.pptx
Ahava Vogelstein
Example BHA Tally Directional Drilling 8.5 Section
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Sleep-dependent activity of T cells and regulatory T cells. - PubMed - NCBI
1 selected item: 19040608
Clin Exp Immunol. 2009 Feb;155(2):231-8. doi: 10.1111/j.1365-2249.2008.03822.x. Epub 2008 Nov 24.
Sleep-dependent activity of T cells and regulatory T cells.
Bollinger T1, Bollinger A, Skrum L, Dimitrov S, Lange T, Solbach W.
Institute of Medical Microbiology and Hygiene, University of Luebeck, Luebeck, Germany. Thomas.Bollinger@uk-sh.de
A number of immunological functions are dependent on circadian rhythms and regular sleep. This has impact on the type and magnitude of immune responses following antigenic challenge, for example in vaccination. Little is known about the underlying mechanisms. One possibility may be the circadian and sleep-dependent modulation of CD4(+)CD25(-) T cell responses by CD4(+)CD25(+) natural regulatory T cells (nT(reg)). In a variety of studies, nT(reg) have been shown to regulate T cell responses negatively. Thus, we investigated the influence of sleep and circadian rhythm on the number and function of nT(reg) as well as on the function of CD4(+)CD25(-) T cells. Seven healthy young men were examined under defined conditions on two occasions, i.e. during sleep and sleep deprivation. Venous blood was drawn periodically; numbers of nT(reg), suppressive activity of nT(reg), interleukin-2 production and proliferation of CD4(+)CD25(-) T cells were explored in vitro. nT(reg) counts revealed a significant circadian rhythm with highest levels during the night (mean 95 nT(reg)/microl) and lowest levels during the day (mean 55 nT(reg)/microl). During normal sleep, the suppressive activity of nT(reg) was highest at 02.00 h and somewhat lower at 15.00 h. Surprisingly, almost no suppressive activity was present at 07.00 h. Deprivation of sleep abrogated this rhythm. CD4(+)CD25(-) T cell proliferation was dampened significantly by sleep deprivation. This is the first study in human cells to show that nT(reg) number and function follow a rhythm across the 24-h period. Furthermore, sleep deprivation severely disturbs the functional rhythm of nT(reg) and CD4(+)CD25(-) T cells.
19040608
PMC2675254
10.1111/j.1365-2249.2008.03822.x
T cell and natural T regulatory (nTreg) cell purity and fluorescence activated cell sorter (FACS) analysis of CD4+CD25− T cell proliferation. (a) CD4+CD25− T cells (left panel) and CD4+CD25+ regulatory T cells (middle and right panel) were isolated from peripheral blood mononuclear cells (PBMC) applying magnetic affinity cell sorter (MACS®) technology. Purified T cells were stained with αCD4-monoclonal antibody (mAb) labelled with allophycocyanin and αCD25-mAb labelled with phycoerythrin or with αCD4-mAb labelled with fluorescein and αforkhead box P3 (FoxP3)-mAb labelled with allophycocyanin and were then analysed by flow cytometry. Mean purity of CD4+CD25− T cells was 96·8% ± 0·6% and mean purity of CD4+CD25+ nTreg was 79·4% ± 7·1%. (b) CD4+CD25−carboxyfluorescein diacetate (CFDA)+ T cells were cultured with nTreg (middle panel) or without nTreg (left panel) in the presence of irradiated adherent cells and αCD3-mAb. Proliferation of CD4+CD25−CFDA+ T cells was measured as the reduction in CFDA fluorescence. M2 represents the percentage of proliferated CD4+CD25− T cells. Control cultures were performed without αCD3-mAb (right panel). Data are from one representative experiment of 70.
Sleep-dependent activity of T cells and regulatory T cells
Clin Exp Immunol. 2009 Feb;155(2):231-238.
Absolute counts of natural T regulatory (nTreg) and suppression of CD4+ T cell proliferation through nTreg. (a) To analyse the number of CD4+CD25+ regulatory T cells in peripheral blood we quantified the CD4+CD25high cells indicated by the circle. The percentage of forkhead box P3+ (FoxP3+) cells within the CD4+CD25high population did not differ over the 24-h period or between the sleep and sleep deprivation condition; 91·5% ± 1% of the CD4+CD25high cells were positive for FoxP3 (data not shown). (b) CD4+CD25+ regulatory T cells were counted in peripheral blood from healthy men during sleep (closed circles) or sleep deprivation (open circles). (c) CD4+CD25− T cells and nTreg were isolated from peripheral blood of healthy young men with sleep (closed circles) and without nocturnal sleep (open circles). CD4+CD25− T cells were stimulated polyclonally either in the presence or absence of nTreg. The inhibition of CD4+CD25− T cell proliferation by nTreg was calculated (for detailed information see Material and methods). (d) Peripheral blood mononuclear cells (PBMC) and PBMC depleted of nTreg were stimulated polyclonally and the inhibition of CD4+ T cell proliferation through the presence of nTreg was quantified in cells isolated from healthy young men with sleep (closed circles) or sleep deprivation (open circles). Shaded area indicates bedtime. Mean values ± standard error of the mean (n = 7).
Proliferation and interleukin (IL)-2 production of CD4+CD25− T cells in vitro and forkhead box P3 (FoxP3) expression in natural T regulatory (nTreg) cells. (a) CD4+CD25− T cells were isolated from peripheral blood of healthy young men with sleep (closed circles) or sleep deprivation (open circles), labelled with carboxyfluorescein diacetate (CFDA) and polyclonally stimulated. The percentage of proliferated T cell was measured through the reduction in CFDA fluorescence. (b, d) IL-2 was measured in the supernatants of polyclonally stimulated CD4+CD25− T cells in the absence (b) or presence (d) of nTreg. (c) FoxP3 expression levels in nTreg (CD4+CD25high) were measured as ‘Geo Mean’ applying flow cytometry. Cells were isolated from peripheral blood of healthy young men with sleep or sleep deprivation. Shaded area indicates bedtime. Mean values ± standard error of the mean (n = 7).
Circadian Rhythm/immunology
Sleep/immunology*

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Julie Creswell Julie Creswell is a reporter based in The Time's New York office where she has written features about businesses and profiles of key leaders on Wall Street and in health care and retail. More
Julie Creswell is a reporter based in The Time's New York office where she has written features about businesses and profiles of key leaders on Wall Street and in health care and retail.
At The New York Times, Julie has covered banks, private equity, hedge funds and health care. Before the Times, she worked for several years at Fortune Magazine and, before that, wrote about debt, monetary policy and mutual funds for several years at Dow Jones.
After attending high school in her small hometown in Western Iowa, she graduated from the University of Iowa with a degree in journalism. Latest
American Girl’s New Doll: It’s a Boy! For the first time in its 31-year history, the maker of pricey 18-inch dolls is introducing a young male. His name is Logan Everett. He plays drums.

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P. 1Asian Development Outlook 2010 HighlightsAsian Development Outlook 2010 HighlightsRatings: (0)|Views: 26
|Likes: 0Published by Asian Development BankDeveloping Asia can look ahead to a robust recovery in the next 2 years. Growth is forecast to rise to 7.5% in 2010 and moderate to 7.3% in 2011, marking a healthy rebound from the 2009 slowdown. Shifting the drivers of growth from the support of monetary and fiscal expansion to robust private sources is now the key challenge for sustaining the recovery, both globally and regionally. Inflation pressures are increasing but still manageable in most developing Asian economies. Beyond the crisis, developing Asia faces the challenge of adjusting its monetary, exchange rate, and fiscal policies to foster macroeconomic stability and sustained growth within the broader direction of a return to prudence and discipline.Developing Asia can look ahead to a robust recovery in the next 2 years. Growth is forecast to rise to 7.5% in 2010 and moderate to 7.3% in 2011, marking a healthy rebound from the 2009 slowdown. Shifting the drivers of growth from the support of monetary and fiscal expansion to robust private sources is now the key challenge for sustaining the recovery, both globally and regionally. Inflation pressures are increasing but still manageable in most developing Asian economies. Beyond the crisis, developing Asia faces the challenge of adjusting its monetary, exchange rate, and fiscal policies to foster macroeconomic stability and sustained growth within the broader direction of a return to prudence and discipline.More info:Categories:Types, Business/LawPublished by: Asian Development Bank on Feb 24, 2011Copyright:Attribution Non-commercialAvailability:Read on Scribd mobile: iPhone, iPad and Android.download as PDF, TXT or read online from ScribdFlag for inappropriate content|Add to collectionSee moreSee lesshttp://www.scribd.com/doc/49453168/Asian-Development-Outlook-2010-Highlights02/11/2013pdftextoriginal Highlights
ADO 2010 Developing Asia can look ahead to a robust recovery in the next  years. Growth is orecast to rise to 7.5% in  and moderate to7.3% in , marking a healthy rebound rom the 9 slowdown.Shiting the drivers o growth rom the support o monetary and scal expansion to robust private sources is now the key challengeor sustaining the recovery, both globally and regionally. Infationpressures are increasing but still manageable in most developingAsian economies. Beyond the crisis, developing Asia aces thechallenge o adjusting its monetary, exchange rate, and scal policiesto oster macroeconomic stability and sustained growth within thebroader direction o a return to prudence and discipline.
Developing Asia weathered the harsh global environment in 2009 well. It was the z
rst region to emerge rom the global turmoil, helped by decisive policy responses.Supported by improving global prospects, the
) projects developing Asia’s growth to rebound to 7.5% in 2010, a strongacceleration rom 5.2% in 2009, though still well below the record 9.6% growth o 2007. The region aces the challenge nonetheless o maintaining momentum againstthe backdrop o a gradual unwinding o expansionary measures and a slow pickupin external demand. The projection or 2011 is a moderate 7.3%.As recovery takes hold, ination pressures, particularly in asset prices, may well z
start to mount in the region.
projects that ination will increase, but toa still moderate 4.0% in 2010, conditional on the implementation o appropriatepolicy measures. Unusually easy monetary policy throughout the region cannotbe kept or too long, and there is a need to revert to a normal stance. The surplusin developing Asia’s current account balance narrowed or a second consecutiveyear to 4.9% o gross domestic product (GDP) in 2009 rom a recent peak o 6.5%in 2007. It is orecast to narrow urther to 4.1% in 2010 and 3.6% in 2011.Several downside risks to the global outlooka slower global recovery, mistimed z
withdrawal o macroeconomic stimulus measures, a sharp increase in internationalcommodity prices, deteriorating scal positions, and the persistence o globalimbalancescould derail developing Asia’s growth momentum. In addition,the region’s stronger recovery and higher interest rates relative to those in themajor industrial countries are already attracting potentially volatile capitalows, complicating macroeconomic management. Rising ood prices, whichdisproportionately impact the poor, also pose a risk.Beyond the global crisis, the region’s policy makers ace the challenge o adapting z
monetary, exchange rate, and scal policies to oster stable and sustainable growth.A long-standing tradition o scal and monetary prudence served the region wellduring the crisis. For example, ample scal space built up over years o sustainedscal discipline enabled the unleashing o decisive and large scal stimulusprograms. Part 2 o ADO 2010
calls or the region to remain aithul to sound andresponsible scal and monetary policy, while adapting those policies appropriatelyas recovery takes hold and the economic crisis recedes.There is plenty o scope or improving and strengthening Asia’s monetary, exchange z
rate, and scal policy rameworks. As Part 2 lays out, such adjustments will enablethe region to better adapt to the postcrisis world. For example, while price stabilitymust remain the overriding objective o monetary policy, the global crisis highlightsthe need to prevent asset price bubbles, suggesting a need to improve coordinationbetween nancial regulation and monetary policy. In scal policy, while it is o paramount importance to saeguard sustainability with strong medium-term scalpolicy rameworks, a wide range o measures can contribute to more balancedgrowth by removing structural impediments to domestic demand. Finally, moreexible exchange rate systems are in the region’s own interest, and careullydesigned capital controls that mitigate disruptive capital inows may be desirableduring the transition to greater exibility, at least in the short run.
Perormance in 2009
At 5.2% in 2009, developing Asia’s growth was its lowest in 8 years. Economies z
decelerated across the region, with only South Asia perorming marginally betterthan in 2008. The larger economies, such as the People’s Republic o China (PRC)and India, ared better. But or many economies, slower growth resulted rom asharp decline in exports to the industrialized world.Ination in developing Asia was subdued at 1.5%, held down by depressed economic z
activity and lower international commodity prices. In some economies, such as thePRC; Taipei,China; and Thailand, consumer prices even declined on average duringthe year as deation pressures persisted. Current account surpluses ell marginally.Although demand or the region’s exports slowed sharply, imports also weakened,leaving the surplus in developing Asia at 4.9% o GDP, down rom 5.4% the previousyear. Surpluses in East Asia, Central Asia, and the Pacic declined in 2009.Though most economies in East Asia contracted in 2009, solid growth in the PRC z
buoyed the aggregate perormance. Overall GDP expanded by 5.9%, almost entirelya result o 8.7% growth in the PRC, which was based heavily on exceptional scaland monetary stimulus adopted to combat the impact o the global recession.The Republic o Korea grew marginally, also helped by scal stimulus, but globalheadwinds battered Hong Kong, China; Mongolia; and Taipei,China, all o whichcontracted in 2009. Consumer prices ell slightly in the PRC and Taipei,China, andwere at on a subregional basis.Southeast Asia’s growth slowed sharply to just 1.2% in 2009, the weakest outcome z
since the 1997–98 Asian nancial crisis. Aggregate GDP would have declined i it had not been or relatively high growth o 4.5% in Indonesia, the subregion’sbiggest economy. Indeed, hal the 10 economies contracted (Brunei Darussalam,Cambodia, Malaysia, Singapore, and Thailand), as the global recession cut intoexports and investment ows. In many economies, imports ell even more steeplythan exports, such that the subregional current account surplus rose. Aggregateination decelerated to 2.7%.South Asian growth edged up to 6.5% in 2009 rom 6.4% in 2008, but only India and z
Aghanistan saw gains. India experienced a strong rebound to an estimated 7.2% orthe year, despite the impact o a drought on crops. Continued scal stimulus andmonetary easing in India over the year, alongside an improving global environment,prompted large capital inows as investor and consumer condence strengthened.Aghanistan recovered rom a drought, posting 15.1% growth. But the Pakistanieconomy again slowed, though macroeconomic imbalances narrowed, as worseningsecurity and power shortages obstructed any meaningul improvement in economicperormance. GDP growth also slipped in Bangladesh, Bhutan, Maldives, and SriLanka, although Sri Lanka revived markedly rom May, ater the end o its long civilconict. Ination in South Asia was back to around precrisis levels, at 5.6%.
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Greek Bank Faces Charges - The New York Times
Archives|Greek Bank Faces Charges
https://nyti.ms/29jO1My
Greek Bank Faces Charges
March 15, 1990, Page 00006 The New York Times Archives
A leading Greek bank and 13 of its employees were indicted in Brooklyn yesterday on Federal charges of carrying out a money-laundering scheme that enabled clients to evade taxes on millions of dollars.
Federal authorities said the bank, the National Mortgage Bank of Greece, illegally processed $700 million through branches in the United States since 1983. It operated branches in Brooklyn, Queens, Hicksville, L.I., and in the suburbs of Boston, Philadelphia and Chicago.
The scheme was brought to light last June when the individual defendants were arrested after a nine-month undercover investigation.
Andrew J. Maloney, the United States Attorney in Brooklyn, said that the bank was authorized to act in this country only as a representative bank, which is prohibited from accepting deposits or opening accounts, but that it flagrantly violated the restrictions for thousands of clients.
The clients brought large amounts of cash to storefront offices of the bank, the charges said, and employees divided the cash into amounts of $10,000 or less to buy draft checks at legitimate local banks.
The draft checks were made out to the Greek bank, which held the money in accounts in the United States or wired it to Greece for the clients, concealing the money from the Internal Revenue Service, the charges said. The I.R.S. said it was investigating the clients, described as Greek-Americans, including doctors and business executives.
If convicted on all of the charges, the bank could be fined about $10 million, and the employees could face long prison sentences, as well as fines.
Lawyers for the bank said the institution and the indicted employees intended to plead not guilty and establish
A version of this article appears in print on March 15, 1990, on Page D00006 of the National edition with the headline: Greek Bank Faces Charges. Order Reprints| Today's Paper|Subscribe


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8pcs Tibetan Silver Basketball Pendants Charms 22mm | eBay Please enable JavaScript Our new search experience requires JavaScript to be enabled. Please enable JavaScript on your browser, then try again.
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Patent US6906912 - Solid electrolytic capacitor and method of producing the same - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA solid electrolytic capacitor is provided in which non-conductive particles are made to be present between a dielectric layer and an electrolyte layer. A second electrolyte layer is formed of a conductive polymer including graphite particles and non-conductive particles....http://www.google.com/patents/US6906912?utm_source=gb-gplus-sharePatent US6906912 - Solid electrolytic capacitor and method of producing the sameAdvanced Patent SearchPublication numberUS6906912 B2Publication typeGrantApplication numberUS 10/620,084Publication dateJun 14, 2005Filing dateJul 14, 2003Priority dateJul 15, 2002Fee statusPaidAlso published asCN1503286A, CN100557743C, US20040104450Publication number10620084, 620084, US 6906912 B2, US 6906912B2, US-B2-6906912, US6906912 B2, US6906912B2InventorsShinji Arai, Masahiko Tanaka, Kenji ArakiOriginal AssigneeNec Tokin Corporation, Nec Tokin Toyama, Ltd.Export CitationBiBTeX, EndNote, RefManPatent Citations (5), Referenced by (12), Classifications (16), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetSolid electrolytic capacitor and method of producing the same
US 6906912 B2Abstract
A solid electrolytic capacitor is provided in which non-conductive particles are made to be present between a dielectric layer and an electrolyte layer. A second electrolyte layer is formed of a conductive polymer including graphite particles and non-conductive particles.
a lead wire; an anode member by comprising a sintered member of a valve-action metal powder having the lead wire embedded therein; a dielectric layer formed on a surface of the anode member; a first electrolyte element in an electrolyte layer formed on the dielectric layer and defining a plurality of cavities; non-conductive particles dispersed in the cavities defined by the first electrolyte element; a second electrolyte element provided in the electrolyte layer so as to surround the non-conductive particles; a cathode member formed on the first electrolyte layer such that particles of a material of the cathode member are dispersed in the electrolyte layer; a silver paste layer formed on the cathode member; external terminals respectively connected to the lead wire and the silver paste layer; and a resin package molded so as to expose the external terminals. 2. The solid electrolytic capacitor according to claim 1, wherein said non-conductive particles have an average size which is smaller than an average size of the particles of the material of said cathode member.
3. The solid electrolytic capacitor according to claim 1, wherein said valve action metal is one of Nb, Al, Ta, Ti, Hf and Zr.
4. The solid electrolytic capacitor according to claim 1, wherein said first electrolyte element includes at least one of a conductive polymer formed by polymerizing pyrrole and a conductive polymer formed by polymerizing thiophene.
5. The solid electrolytic capacitor according to claim 4, wherein said electrolyte layer includes a conductive powder comprising at least one of SnO2 powder, ZnO powder, and a carbon-based conductive filler comprising at least one of carbon black, graphite and carbon fibers.
6. The solid electrolytic capacitor according to claim 5, wherein said conductive powder comprises the at least one of the SnO2 powder and the ZnO powder covering at least one of TiO2 and a BaSO4.
7. The solid electrolytic capacitor according to claim 4, wherein said electrolyte layer includes a carbon-based conductive filler comprising at least one of carbon black, graphite and carbon fibers.
8. The solid electrolytic capacitor according to claim 1, wherein said second electrolyte element comprises a conductive polymer which surrounds the non-conductive particles, and wherein said second electrolyte element is provided between (i) a surface of at least one of said dielectric layer and said cathode member, and (ii) the particles of the material of the cathode member which are dispersed in the electrolyte layer.
9. A The solid electrolytic capacitor according to claim 1, wherein said cathode member comprises graphite.
10. A solid electrolytic capacitor comprising:
a lead wire; an anode member comprising a sintered member of a valve-action metal powder having the lead wire embedded therein; a dielectric layer formed on a surface of the anode member; a first electrolyte element in an electrolyte layer formed on the dielectric layer and defining a plurality of cavities; non-conductive particles dispersed in the cavities defined by the first electrolyte element; a second electrolyte element provided in the electrolyte layer so as to surround the non-conductive particles; a cathode member formed on the electrolyte layer such that particles of a material of the cathode member are dispersed in the electrolyte layer; a silver paste layer formed on the cathode member; and external terminals respectively connected to the lead wire and the silver paste layer; wherein the non-conductive particles are also positioned in an area defined by a recess in the dielectric layer, and said second electrolyte element is provided in the electrolyte layer after said non-conductive particles are positioned in the area defined by the recess in said dielectric layer. 11. The solid electrolytic capacitor according to claim 10, wherein said non-conductive particles are also positioned on a surface of said dielectric layer, and said second electrolyte element is provided so as to prevent said cathode member from contacting said non-conductive particles.
12. A solid electrolytic capacitor comprising:
a lead wire; an anode member comprising a sintered member of a valve-action metal powder having the lead wire embedded therein; a dielectric layer formed on a surface of the anode member; a first electrolyte element in an electrolyte layer formed on the dielectric layer and defining a plurality of cavities; non-conductive particles dispersed in the cavities defined by the first electrolyte element; a second electrolyte element provided in the electrolyte layer so as to surround the non-conductive particles; a cathode member formed on the electrolyte layer such that particles of a material of the cathode member are dispersed in the electrolyte layer; a silver paste layer formed on the cathode member; and external terminals respectively connected to the lead wire and the silver paste layer; wherein said second electrolyte element is provided in the electrolyte layer after said non-conductive particles are positioned; and wherein a distance from an interface between said electrolyte layer and said dielectric layer to a surface of said anode member is smaller than an average thickness of said electrolyte layer. 13. The solid electrolytic capacitor according to claim 12, wherein said non-conductive particles are also positioned on a surface of said dielectric layer, and said second electrolyte element is provided so as to prevent said cathode member from contacting said non-conductive particles.
14. A method of producing a solid electrolytic capacitor, said method comprising:
sintering a valve-action metal powder while embedding a lead wire therein to form an anode member; forming a dielectric layer on a surface of said anode member; forming an electrolyte layer, including a first electrolyte element, on said dielectric layer of said anode member; immersing said anode member having the electrolyte layer formed thereon in a colloid solution in which non-conductive colloid particles are dispersed, and then drying said anode member; providing a second electrolyte element in the electrolyte layer; forming a cathode member so as to sandwich said electrolyte layer between said cathode layer and said dielectric layer, forming a silver paste layer on said cathode member, and connecting external terminals respectively with said lead wire and said silver paste layer and applying a resin mold so as to expose said external terminals. 15. The method according to claim 14, wherein said immersion of the anode member in the colloid solution causes the non-conductive particles to be present between said dielectric layer and said first electrolyte element.
16. The method according to claim 14, wherein said immersion of the anode member in the colloid solution causes the non-conductive particles to be present in an area defined by a recess on a surface of said dielectric layer.
17. The method according to claim 14, wherein said immersion is carried out under a pressure such that the non-conductive particles are present in an area on a surface of said dielectric layer where a distance from an interface between said first electrolyte layer and said dielectric layer to a surface of said anode member is smaller than an average thickness of said dielectric layer.
18. The method according to claim 14, wherein said non-conductive particles have an average size which is smaller than an average size of particles of a material of said cathode member.
19. The method according to claim 14, wherein at least one of said first electrolyte element and said second electrolyte element comprise at least one of a conductive polymer polymerized from pyrrole, and a conductive polymer polymerized from thiophene.
The present application claims priority to prior application JP 2002-205679, the disclosure of which is incorporated herein by reference.
The present invention relates to a solid electrolytic capacitor and a method of producing the same.
An already known solid electrolytic capacitor has a configuration constituted by an anode, a dielectric layer, an electrolyte layer and a cathode, and is generally obtained by forming, on a metal having a valve action (valve-action metal) and constituting an anode, an oxide film as a dielectric layer (hereinafter called a dielectric layer), then forming thereon a solid electrolyte layer as a semiconductor layer and further forming a cathode member of, for example, graphite.
The valve-action metal is a metal capable of forming an oxide film of a controllable thickness by anodizing, and can be Nb, Al, Ta, Ti, Hf, Zr etc., among which Al and Ta are principally utilized for the practical purposes.
Of these, Al is employed as the anode in a form of an etched foil, while Ta is employed as the anode in a form of a porous material formed by powder sintering.
An electrolytic capacitor of the porous sintered type can be with a particularly small size and a large capacity relative to other solid electrolyte capacitors, and is in strong demand as a component capable of enabling reduction in size of a mobile telephone a portable information terminal equipment etc.
For example, a known solid electrolytic capacitor utilizing Ta is obtained by forming a dielectric layer on a surface of an anode member formed by sintering a powder mixture in which a lead wire is embedded, and then forming, on the aforementioned dielectric layer, a conductive polymer layer, containing for example carbon powder, as a solid electrolyte layer.
On the electrolyte layer formed as a semiconductor layer, a graphite paste layer and an Ag paste layer are formed which function as a cathode.
Then lead frames are connected respectively to the lead wire of the anode member and the Ag paste layer, and the entire structure is resin molded so as to expose these lead frames.
In such a known solid electrolytic capacitor, the electrolyte layer includes many cavities, into which conductive particles constituting the cathode member formed on the electrolyte layer penetrate.
Such a phenomenon, when present extensively, provides an advantage of lowering an equivalent serial resistance (ESR) of the solid electrolytic capacitor itself, and also provides an advantageous effect of securing a capacitance even at a high frequency.
However, in case the cathode-constituting material (conductive material) penetrating into the cavities of the electrolyte layer reaches a defect on the dielectric layer, a concentration of an electric field takes place in the area of the defect so as to cause heat generation or crystallization of the dielectric layer, thereby eventually leading to a breakdown of the dielectric layer.
For this reason it has been desired, in a solid electrolytic capacitor, to reduce a leak current by preventing a dielectric breakdown resulting from the deposition of the aforementioned cathode-constituting particles to a defect formed in the dielectric layer, without hindering the penetration of the cathode-constituting particles into the electrolyte layer (hereinafter called a first electrolyte layer).
In order to meet such a requirement, Japanese Patent Application No. 2001-359779 (hereinafter called prior technology 1) proposes a solid electrolytic capacitor including an anode member which is formed by sintering powder of a valve-action metal and in which a lead wire is embedded, a dielectric layer formed on a surface thereof, an electrolyte layer formed on the dielectric layer, a cathode member formed on such first electrolyte layer, and a silver paste layer formed on the cathode member. The solid electrolytic capacitor is completed by respectively connecting external terminals with the lead wire and the silver paste layer, and resin molding the entire configuration so as to expose such external terminals. The electrolyte layer includes particles constituting the cathode member, and non-conductive particles are made to be present between the dielectric layer and the electrolyte layer.
Such prior technology 1 is proposed to solve the aforementioned drawbacks, but is confirmed to elevate the ESR considerably by the aforementioned process and is therefore difficult to apply to a solid electrolytic capacitor requiring a lower ESR property.
In consideration of the foregoing, it is an object of the present invention to provide a solid electrolytic capacitor capable of suppressing an increase in the ESR which has been a drawback in the prior technology 1, and also capable, without hindering penetration of the particles constituting the cathode into the electrolyte layer, of preventing a dielectric breakdown resulting from a deposition of the cathode-constituting particles to a defect generated in the dielectric layer, thereby reducing a leak current and realizing a satisfactory performance.
It is another object of the invention to provide a method for producing the aforementioned solid electrolytic capacitor.
According to one aspect of the present invention, there is provided a solid electrolytic capacitor which includes a lead wire, an anode member formed by a sintered member of a valve-action metal powder and embedding therein the lead wire, a dielectric layer formed on a surface of the anode member, a first electrolyte layer formed on the dielectric layer, a cathode member formed on the first electrolyte layer, a silver paste layer formed on the cathode member, external terminals respectively connected to the lead wire and the silver paste layer, and a resin package molded so as to expose the external terminals, in which the first electrolyte layer includes particles constituting the cathode member. The solid electrolytic capacitor further comprises non-conductive particles between the dielectric layer and the first electrolyte layer, and a second electrolyte layer formed between the dielectric layer and the cathode member. According to the present invention, the second electrolyte layer is formed after non-conductive particles are made to be present between the dielectric layer and the first electrolyte layer.
According to the present invention, a drawback in the prior technology 1 that the ESR increases since a direct contact between the non-conductive particles and the cathode member causes increase in the electrical resistance at a contact interface of the two, can be avoided by providing an additional electrolyte layer between the non-conductive particles and the cathode member to avoid a contact between the cathode member and the non-conductive particles but to cause a contact between the latter electrolyte layer and the cathode member, and it is also possible to prevent the conductive particles, constituting the cathode member and being present in the electrolyte layer, from contacting in an unnecessary level with the dielectric layer by a thermal expansion or a thermal contraction in a resin molding operation or in a soldering operation, thereby generating a concentration of the electric field. It is consequently possible to prevent a short-circuit defect resulting from a breakdown in the dielectric layer and to improve the product yield without increasing a defect in the ESR.
According to the present invention, it is preferred to position the non-conductive particles in areas constituting recesses in the dielectric layer, and then to form the second electrolyte layer. Such a configuration allows a severe concentration of the electric field generated in areas of an uneven thickness on the dielectric layer to be prevented.
According to the present invention, an area of an uneven thickness means an area having a locally reduced thickness because of an unavoidable situation, such as (i) a contamination of Ta with an impurity, (ii) an uneven current in an anodizing process or (iii) a mechanical stress from the exterior.
Such an area is more likely to cause concentration of the electric field than an area formed with a planned thickness, and prevention of the concentration of the electric field in such an area allows the product yield to be improved, without increasing the ESR.
Also according to the present invention, it is also preferred to position the aforementioned non-conductive particles in such a continuous manner that a distance from an interface between the first electrolyte layer and the dielectric layer to the surface of the anode member is smaller than an average thickness of the first dielectric layer, and then to form the second electrolyte layer. Such configuration allows a severe concentration of the electric field generated in areas of an uneven thickness on the dielectric layer to be prevented, and still allows an increase in the ESR to be prevented.
Also according to the present invention, it is preferred that the non-conductive particles are positioned on the surface of the dielectric layer and in the first electrolyte layer, and the second electrolyte layer is further provided, whereby the cathode member and the non-conductive particles do not come into a direct contact. Such a configuration in the first embodiment prevents a direct deposition of the conductive particles (cathode-constituting particles) in an incomplete area on the surface of the dielectric layer, thereby avoiding a breakdown of the dielectric layer and improving the product yield without increasing an ESR defect.
Also according to the present invention, it is preferred that an average size of the non-conductive particles is smaller than an average size of the particles constituting the cathode member. Such a configuration in the first embodiment allows the non-conductive particles to deposit onto the dielectric layer efficiently.
According to another aspect of the present invention, a method is provided for producing a solid electrolytic capacitor, which includes the steps of sintering a valve-action metal powder while embedding a lead wire therein to form an anode member, forming a dielectric layer on a surface of the anode member, forming a first electrolyte layer on the dielectric layer of the anode member, immersing the anode member having the first electrolyte layer in a colloid solution in which non-conductive colloid particles are dispersed, followed by drying, forming a second electrolyte layer; and forming a cathode member so as to sandwich the first electrolyte layer and the second electrolyte layer with the dielectric layer, then forming a silver paste layer on the cathode member, then connecting external terminals respectively with the lead wire and the silver paste layer and applying a resin mold so as to expose the external terminals. In the aspect of the present invention, it is preferred that the immersion step causes the non-conductive particles to be present between the dielectric layer and the first electrolyte layer.
Such a method allows prevention of concentration of an electric field resulting from contact, in an unnecessary level, of the conductive particles, constituting the cathode member and being present in the electrolyte layer, with the dielectric layer by a thermal expansion or a thermal contraction in a resin molding operation or in a soldering operation. It is thus possible to prevent a shortcircuit defect resulting from a breakdown in the dielectric layer and to improve the product yield without elevating the ESR. According to the present invention, it is preferred that the immersion step causes the non-conductive particles to be present in an area constituting a recess on the surface of the dielectric layer.
Such a method allows a severe concentration of the electric field on the dielectric layer formed with an uneven thickness to be avoided, without an increase in the ESR.
According to the present invention, it is preferred that the immersion step is carried out under a reduced pressure, and causes the non-conductive particles to be present in an area on the surface of the dielectric layer where a distance from an interface between the first electrolyte layer and the dielectric layer to the surface of the anode member is smaller than an average thickness of the dielectric layer.
According to the present invention, it is preferred that the non-conductive particles have an average size which is smaller than an average size of particles constituting the cathode member.
Also according to the present invention, it is preferred that in at least one of the steps of forming the first and the second electrolyte layers, use is made of at least one of conductive polymers polymerized from at least one of pyrrole, thiophene, and derivatives thereof.
FIG. 1 is a cross-sectional view showing a configuration of a known solid electrolytic capacitor;
FIG. 2 is a flow chart showing a method of producing a known solid electrolytic capacitor;
FIG. 3 is a cross-sectional view showing a configuration of a solid electrolytic capacitor of an embodiment of the present invention;
FIG. 4 is a partial cross-sectional view schematically showing a configuration of the solid electrolytic capacitor shown in FIG. 3; and
FIG. 5 is a flow chart showing a method for producing a solid electrolytic capacitor of an embodiment of the present invention.
In order to facilitate understanding of the present invention, description will be made as regards a configuration of a Ta solid electrolytic capacitor by a known technology and a producing method thereof with reference to the accompanying drawings.
As shown in FIG. 1, a known solid electrolytic capacitor 7 utilizing Ta includes a dielectric layer 13 on a surface of an anode member 11 which is formed by sintering a Ta-mixed powder and in which a lead wire 9 is embedded, and a solid electrolyte layer 15 formed by a conductive polymer layer containing carbon powder etc. on the surface of the dielectric layer 13.
On the electrolyte layer 15 formed as a semiconductor layer, a graphite paste layer 17 and an Ag paste layer 19 are formed which serve as a cathode.
Lead frames 21 are connected respectively to the lead wire 9 of the anode member 11 and the Ag paste layer 19, and the entire structure is molded with a resin 23 so as to exposure the lead frames 21.
Next, a description will be made below, with reference to FIG. 2, as regards a prior method of producing the Ta solid electrolytic capacitor.
As a first step, a Ta porous member is formed (step S101). In this step, (i) preparation of Ta powder, and (ii) pressing and sintering are executed.
In the (i) preparation of Ta powder, a binder is added to and mixed with Ta powder in order to improve a press molding property. In the (ii) pressing and sintering, an anode lead wire is inserted into the aforementioned Ta mixed powder, and such powder is press molded into a cylindrical shape or a rectangular parallelepiped shape. Then, the press molded member is sintered by heating to 1300 to 2000(C under a high vacuum (10−4 Pa or less) to form a Ta porous member or an anode member 11.
In a second step, a dielectric layer 13 is formed (step S102). An anodizing process (step S102 a) is executed by immersing the Ta porous member as an anode, together with a counter electrode, in an electrolyte solution such as phosphoric acid and applying an anodizing voltage to form a Ta oxide film constituting a dielectric layer on the surface of the Ta porous member (anodic oxidation). In this operation, an anodizing voltage condition (vf (formation voltage)) determines a thickness of the dielectric layer (Ta oxide film) 13, thereby determining the characteristics of the capacitor. For the electrolyte solution, there is employed for example an aqueous solution of phosphoric acid of a concentration of 0.6 vol. %.
Then, as a third step, an electrolyte layer 15 is formed (step S103). On the oxide film, formed in the preceding step, of the Ta porous member, a solid electrolyte layer is formed as a semiconductor layer (step S103 a). As the solid electrolyte, there is employed manganese dioxide, pyrrole, thiophene or a conductive polymer formed by polymerizing derivatives thereof. For example, in the case in which a pyrrole polymer is employed as the solid electrolyte, the solid electrolyte layer can be formed by subjecting the anode member, bearing the dielectric layer on the surface thereof, to a chemical polymerization or an electrolytic polymerization utilizing a monomer solution. Also in the case in which manganese is employed as the solid electrolyte, the solid electrolyte layer can be formed by immersing the anode member, bearing the dielectric layer on the surface thereof, in manganese nitrate, followed by heating.
Then, as a fourth step, a re-anodizing step (step S104) is executed. In the foregoing step for forming the solid electrolyte layer, particularly in the case in which manganese is selected as a component of the solid electrolyte layer, the dielectric layer 13 may be locally damaged by a thermal process executing during such step. In order to repair such a damaged part of the dielectric layer 13, the anode member, on which the dielectric layer 13 and the solid electrolyte layer 15 are formed in succession, is immersed again in the anodizing solution.
Then, as a fifth step, a cathode member 17 is formed (step S105). In this step, a graphite paste layer is formed (step S105 a), and a next sixth step executes formation of an Ag paste layer (step S106). More specifically, on the solid electrolyte layer 15, a graphite layer is formed which serves as a cathode member 17, and a silver (Ag) paste layer 19 is further formed thereon.
In the seventh and eighth steps, a lead frame joining (step S107) and a mold packaging (step S108) are respectively executed. More specifically, an anode part of the lead frame is adjoined by spot welding to the lead wire of the anode, and a cathode part of the lead frame 21 is adjoined with a conductive adhesive 25 to the Ag paste layer 19.
Finally, the entire configuration is resin molded as an external package 23, whereby a solid electrolytic capacitor (Ta solid electrolytic capacitor) 7 of a configuration as shown in FIG. 1 is completed.
As shown in FIG. 1, in the prior solid electrolytic capacitor 7, the electrolyte layer 15 has many cavities, in which the conductive particles constituting the cathode member 17, formed on the electrolyte layer 15 are penetrated.
When such a phenomenon is extensive, an advantage of lowering an equivalent serial resistance (ESR) of the solid electrolytic capacitor itself, and also an advantageous effect of securing a capacitance even at a high frequency are provided.
However, if the material (dielectric material) constituting the cathode member 17 and penetrating into the cavities of the electrolyte layer 15 reaches a defective part on the dielectric layer 13, concentration of an electric field takes place in such a defective part to cause heat generation and a crystallization of the dielectric layer 13, thereby eventually leading to a breakdown of the dielectric layer.
Such a defective part on the dielectric layer 13 generally means an area of a thickness significantly different from an initially intended thickness of the dielectric layer, and such part is unavoidable in the current method for producing the solid electrolytic capacitor.
Now, description will be made as regards an embodiment of the solid electrolytic capacitor of the present invention and a producing method thereof with reference to the accompanying drawings.
As shown in FIG. 3, the solid electrolytic capacitor 31 of the present invention is constituted by a capacitor element 33, of which an anode part and a cathode part are respectively connected either directly or indirectly to a lead frame 35 and which is sealed in a molding resin 37.
The capacitor element 33 is constituted by forming a dielectric layer 41 on a surface of an anode member 39 formed by sintering a Ta mixture powder in which a lead wire 37 is embedded, and further forming an electrolyte layer (hereinafter first electrolyte layer) 43 and a cathode member 47 on the surface of the dielectric layer 41.
The first electrolyte layer 43 is constituted by a conductive polymer 45 formed on the surface of the dielectric layer 41. Also a graphite paste layer is formed as the cathode member 47 so as to surround the first electrolyte layer 43, and an Ag paste layer 49 is formed on the cathode member 47.
The anode part indicates the lead wire 37 inserted at the formation of the anode member 39. The surface of the lead wire 37 is not subjected to the aforementioned formation of the dielectric layer 41 in order to secure conductivity to the lead frame 35 to be adjoined thereto.
Also the cathode part indicates an outermost shell part (or layer) which is formed by adjoining of the lead frame 35 with the Ag paste layer 49 and which is rendered conductive with the cathode member 47 of the capacitor element 33.
Thus, the lead frame 35 is respectively connected, as an anode terminal and a cathode terminal, to the lead wire 37 constituting the anode part and the Ag paste layer 49 constituting the cathode part.
The lead frame 35 at the cathode terminal and the Ag paste layer 49 are adjoined by a conductive adhesive 51.
Since the anode member 39 is a sintered member, the dielectric layer 41 and the cathode member 43 formed thereon are not formed in a state shown in FIG. 3, which figure merely illustrates the configuration thereof in a schematic manner.
In the following, there will be explained, with reference to FIG. 4, a configuration of the solid electrolytic capacitor of the present invention, particularly that of the capacitor element.
FIG. 4 is a cross-sectional view of the capacitor element in the solid electrolytic capacitor shown in FIG. 3. Referring to FIG. 4, the capacitor element 33 of the solid electrolytic capacitor of the present invention is constituted by an anode member 39 having a plurality of irregularities on the surface and in the interior, a dielectric layer 41 formed on the surface of the anode member 39, a first electrolyte layer 43 formed on the surface of such dielectric layer 41, a cathode member 47 (graphite paste layer) so as to surround these components, and an Ag paste layer 49.
The first electrolyte layer 43 is formed by a conductive polymer 45, formed so as to be filled on the surface and in the cavities of the dielectric layer 41.
In order to achieve a further enhancement in the conductivity of the first electrolyte layer 43 composed of the conductive polymer 45, it is possible to add powder of SnO2 or ZnO, inorganic particles (TiO2, BaSO4 etc.) covered with such substances, or a carbon-based conductive filler such as carbon black, graphite or carbon fibers.
An amount of addition of such additive is not particularly limited, but is preferably 4000 parts by weight or less with respect to 100 parts by weight of the conductive polymer. An amount exceeding 4000 parts by weight may increase a viscosity of the conductive layer, thus eventually resulting in an uneven coating.
Also in the first electrolyte layer 43, there are formed many cavities, and the conductive particles, such as graphite particles, are present in an appropriate amount in such cavities so as to cause the first electrolyte layer to function as a semiconductor layer and also serving to reduce the ESR.
In the solid electrolytic capacitor of the invention, the graphite particles 59 are deposited in an area 53 where a surface of the dielectric layer 41 (at the side of the first electrolyte layer 43) is recessed, namely where a thickness is significantly smaller than an average thickness of the dielectric layer 41, across the aforementioned non-conductive particles 55 and the conductive polymer 57 formed so as to surround the non-conductive particles 55.
Such a configuration is one in which, among the graphite particles 59 present in the first electrolyte layer 43, some of the graphite particles 59 a present in the recess 53 on the surface of the dielectric layer 41 are prevented from contacting the dielectric layer 41, and the concentration of the electric field can be avoided by a fact that the non-conductive particles 55 and the conductive polymer 57 formed so as to surround the non-conductive particles 55 prevent the contact of the graphite particles 59 a with the dielectric layer 41, while the contact resistance does not increase because of the contact between the conductive polymer 57 with the graphite particles 59 a. The above-mentioned conductive polymer 57 means a conductive polymer obtained, by forming an additional electrolyte layer (hereinafter called second electrolyte layer) after positioning the non-conductive particles 55.
Also in order to avoid as far as possible a contact of the graphite particles 59 in the second electrolyte layer with the dielectric layer 41, the size of the graphite particles 59 is made larger than the size of the non-conductive particles 55.
Next, there will be explained below, with reference to the accompanying drawings, a method for producing a solid electrolytic capacitor constituting an embodiment of the present invention.
In the description of the embodiments of the present invention, concentration of a solution is represented in a percentage by volume unless otherwise specified.
First, as shown in FIG. 5, a first step executes formation of a Ta porous member (anode member 39) (step S1). In this step, (i) preparation of Ta powder, and (ii) pressing and sintering are executed.
In the (i) preparation of Ta powder, a binder is added to and mixed with Ta powder in order to improve a press molding property of the mixed powder with respect to the Ta powder. In the (ii) pressing and sintering, an anode lead wire is inserted into the aforementioned Ta mixed powder, and such powder is press molded into a cylindrical shape or a rectangular parallelepiped shape. Then, the press molded member is sintered by heating to 1400 to 2000(C under a high vacuum (10−4 Pa or less) to form a Ta porous member (anode member 39).
In a second step, a dielectric layer 41 is formed (step S2). An anodizing process (step S2 a) is executed by immersing the Ta porous member as an anode, together with a counter electrode, in an electrolyte solution such as phosphoric acid and applying an anodizing voltage to form a Ta oxide film constituting a dielectric layer 41 on the surface of the Ta porous member (anodic oxidation). In this operation, an anodizing voltage condition (vf (formation voltage)) determines a thickness of the dielectric layer (Ta oxide film) 43, thereby determining the characteristics of the capacitor. For the electrolyte solution, an aqueous solution of phosphoric acid is employed for example in a concentration of 0.6%. Also in the following description, the anode member 39 bearing thus formed dielectric layer 41 on its surface is explained as an anodized member.
Then, as a third step, a first electrolyte layer 43 is formed (step S3). In the present invention, the first electrolyte layer 43 is constituted by a conductive polymer 45.
First, a conductive polymer layer is formed (step S3 a). For forming the first electrolyte layer 43, which is a major component serving as a semiconductor layer in the present invention, a conductive polymer 45 is employed. For such conductive polymer materials, a conductive polymer can be used which is formed by polymerizing pyrrole, thiophene or derivatives thereof. Therefore, such a first electrolyte layer 43 is formed, by immersing the anode member in an oxidant, drying and immersing in a monomer solution after the formation of the dielectric layer 41.
Then, as a fourth step, a re-anodizing step (step S4) is executed. This step executes the foregoing anodizing process (step S2 a) for the purpose of restoration of the dielectric layer 41.
Then, as a fifth step, a step of positioning the non-conductive particles is executed (step S5). For depositing (positioning) non-conductive particles 61 on the dielectric layer 41, non-conductive particles 55 are prepared as colloid particles and are dispersed in a solvent to obtain a colloid solution. A colloid solution was employed which is constituted by a silica solution with a concentration of 0.1 to 5 wt. %. The anodized member, subjected to the re-anodizing step, is immersed in the thus prepared colloid solution. Thereafter, the immersed anodized member is dried at 100 to 150(C whereby the solvent is evaporated and the non-conductive particles 55 dispersed in the solvent are made to penetrate in the cavities in the first electrolyte layer 43 and in fine structure of the recess 53.
Then, as a sixth step, a second electrolyte layer is formed (step S6). In this step, a conductive polymer layer is formed (step S6 a), in a manner similar to the formation of the first electrolyte layer 43 (step S3). The second electrolyte layer is also formed on or in contact with a surface of the first electrolyte layer 43.
Then, as a seventh step, a re-anodizing step is executed (step S7) in a manner similar to the foregoing re-anodizing step (step S4).
Then, as an eighth step, a cathode member 47 is formed (step S8). In this step, a graphite layer is formed (step S8a). More specifically, a cathode member 47 of graphite is formed so as to surround the electrolyte layer 43.
Then, as a ninth step, an Ag paste layer is formed (step S109). More specifically, after the formation of the cathode member 47, an Ag paste layer 49 is formed thereon in order to achieve a satisfactory junction between the cathode member 47 and the cathode terminal.
In a tenth step, a lead frame 35 is adjoined (step S10). More specifically, an anode part of the lead frame 35 is adjoined by spot welding to the lead wire 37 of the anode, and a cathode part of the lead frame 35 is adjoined with a conductive adhesive 51 to the Ag paste layer 49.
Finally, as an eleventh step, a mold packaging is executed (S11). More specifically, the entire configuration is resin molded as an external package 60, whereby a solid electrolytic capacitor (Ta solid electrolytic capacitor) 31 of a configuration as shown in FIG. 3 is completed.
Following Table 1 shows the result of a comparison of an LC defect rate in the course of the production process and an LC defect rate after the molding, between a solid electrolytic capacitor embodying the present invention and a solid electrolytic capacitor obtained by a known production method.
The colloid particles (non-conductive particles) employed in the present invention have an average size (diameter) of 1.0�10−9 to 1.0�10−7 m, while the conductive particles (graphite particles) constituting the cathode member have an average size (diameter) of 5.0�10−6 to 2.0�10−5 m and the cavities of the electrolyte layer have an average size (diameter) of 1.0�10−6 to 1.0�10−4 m.
Japanese Patent Appln.
No. 2001-359779
LC defect rate
in the process (%)
LC defect rate after
packaging (ppm)
ESR defect rate (%)
As will be understood from Table 1, the LC defect rate in the course of the production process and after the packaging is significantly lowered while the ESR defect does not increase, by depositing the non-conductive particles in recesses (generally called defects) on the dielectric layer so as to hinder the deposition of the conductive particles and then forming the electrolyte layer again.
As explained in the foregoing, in the solid electrolytic capacitor and the producing method thereof according to the present invention, the non-conductive particles are present at a predetermined concentration between the dielectric layer and the electrolyte layer, particularly between the defective part of the dielectric layer and the electrolyte layer while the electrolyte is present so as to surround such non-conductive particles, whereby the conductive particles constituting the cathode member can be prevented from depositing on such defective part without an increase in the ESR.
Thus, the present invention provides a solid electrolytic capacitor and a producing method therefor, capable of preventing concentration of an electric field resulting from a direct deposition of a conductive material such as the conductive particles directly onto the defective part, thereby avoiding a breakdown in the dielectric layer.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5473503 *Jul 27, 1994Dec 5, 1995Nec CorporationSolid electrolytic capacitor and method for manufacturing the sameUS5621608 *Nov 24, 1995Apr 15, 1997Nec CorporationSolid electrolytic capacitor having two solid electrolyte layers and method of manufacturing the sameUS6430033 *Jun 24, 1999Aug 6, 2002Nichicon CorporationSolid electrolytic capacitor and method of making sameUS20030111247Nov 21, 2002Jun 19, 2003Nec Tokin Toyama, LtdSolid electrolytic capacitor, and method for preparing the sameJP2003163138A Title not available* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS7233483 *Mar 9, 2006Jun 19, 2007Sanyo Electric Co., Ltd.Solid electrolytic capacitorUS7724502 *Sep 4, 2007May 25, 2010Avx CorporationLaser-welded solid electrolytic capacitorUS7867291May 21, 2010Jan 11, 2011Avx CorporationLaser-welded solid electrolytic capacitorUS8004825 *Sep 18, 2008Aug 23, 2011Sanyo Electric Co., Ltd.Solid electrolyte capacitorUS8050014 *Nov 1, 2011Sanyo Electric Co., Ltd.Solid electrolytic capacitor and method for production thereofUS8355242Nov 12, 2010Jan 15, 2013Avx CorporationSolid electrolytic capacitor elementUS20080204975 *Feb 7, 2008Aug 28, 2008Sanyo Electric Co., LtdSolid electrolytic capacitor and method for production thereofUS20090059477 *Sep 4, 2007Mar 5, 2009Avx CorporationLaser-Welded Solid Electrolytic CapacitorUS20090080143 *Sep 18, 2008Mar 26, 2009Sanyo Electric Co., Ltd.Solid electrolyte capacitorUS20100229361 *May 21, 2010Sep 16, 2010Avx CorporationLaser-Welded Solid Electrolytic CapacitorUS20140160633 *Feb 18, 2014Jun 12, 2014Kemet Electronics CorporationSolid Electrolytic Capacitor and Method of Manufacturing a Solid Electrolytic CapacitorCN101383230BSep 3, 2008Mar 21, 2012Avx公司Laser-geschweisster kondensator mit festem elektrolyten* Cited by examinerClassifications U.S. Classification361/525, 29/25.03, 361/528International ClassificationH01G9/032, H01G9/02, H01G9/028, H01G9/00, H01G9/04, H01G9/14, H01G9/025, H01G9/15Cooperative ClassificationH01G9/0036, H01G9/025, Y10T29/417European ClassificationH01G9/025, H01G9/00M4Legal EventsDateCodeEventDescriptionJul 14, 2003ASAssignmentOwner name: NEC TOKIN CORPORATION, JAPANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ARAI, SHINJI;TANAKA, MASAHIKO;ARAKI, KENJI;REEL/FRAME:014291/0399Effective date: 20030708Owner name: NEC TOKIN TOYAMA, LTD., JAPANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ARAI, SHINJI;TANAKA, MASAHIKO;ARAKI, KENJI;REEL/FRAME:014291/0399Effective date: 20030708Nov 13, 2008FPAYFee paymentYear of fee payment: 4Nov 14, 2012FPAYFee paymentYear of fee payment: 8RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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My Wife Is Rad sticker decal | Etsy
Height: 2.25 Inches; Width: 9 Inches
MY WIFE IS RAD bumper sticker/decal
This rad sticker is 2/C screen-printed on CLEAR all-weather vinyl. Stick 'em anywhere.
The image on glass shows how the clear looks. Rad!
Large 80's style
McVeyalltrade

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iGoogle style web portal | AJAX | Django | Google App Engine | Javascript | Website Design
iGoogle style web portal
We are looking for someone (preferably an individual) to create a web portal closely similar to iGoogle and Netvibes, to be run on Google App Engine. The site does *not* need to support customisable widgets and does *not* need an API for widget and theme development at this point. The implementation of widget containers and other related components should be based on YUI 3. You will need to implement and design the entire site, including the user login/registration pages, tabs, and appropriate databases on App Engine. Since the individual widgets, themes and APIs are not needed, your main focus is to get the widget containers working and the integrity and design of the site.
Skills: AJAX, Django, Google App Engine, Javascript, Website Design
See more: igoogle engine, igoogle portal, igoogle yui, igoogle web engine, igoogle style web site, portal google style, igoogle portal design, igoogle style portal, portal igoogle, igoogle portal development, web site themes, web development works, web development widget, web development themes, web development portal, web design implementation, themes design web, planning develop website, other experiences, javascript based web development, google web app development, google app engine registration, develop databases, design web style, containers c
( 2 reviews ) Gold Coast, United Kingdom
Project ID: #573573
SpringMonkeys are specialist in design and functional program. We have experience with google technology from mobile android platform to google app engine. We understand what tools need to make a standout web 2.0 porta More
I have experience working django, app engine, and the jquery libraries required to do the draggable portal interface needed to look and feel like google ig, so I'm confident I can handle this project :) But, althoug More
Though i am new to free lancer i have experience in web development and i am willing to show you sample widgets if you accept me
Firefox addon for selecting text of webpages ($30-250 USD)
iGoogle type web portal ($750-1500 USD)

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Tags:Cincinnati Bengals, Cincinnati Bengals, Geno Atkins, Carlos Dunlap, Michael Johnson, margus hunt, wallace gilberry, mike nugent
December 2014 (121)November 2014 (134)October 2014 (157)September 2014 (136)August 2014 (145)July 2014 (93)June 2014 (80)May 2014 (96)April 2014 (86)March 2014 (78)February 2014 (66)January 2014 (105)December 2013 (137)November 2013 (100)October 2013 (138)September 2013 (132)August 2013 (18)
ColeyHarvey Coley Harvey.@guypbenson @MedillSchool Thanks for watching, Guy. You've been doing a GREAT job for a good while. Been fun to track. #PurpleMafia #GoUNU4 minutes ago ColeyHarvey Coley HarveyJust punching a few numbers here. Fifteen percent of the #Bengals' active roster has been sick this week. That's incredibly high.42 minutes ago ColeyHarvey Coley HarveyMike Nugent also is Probable. Andy Dalton is so well from his illness that he's not even on the injury report anymore. #Bengalsabout an hour ago ColeyHarvey Coley Harvey...Terence Newman, James Wright also are Questionable. PROBABLE: A.J. Green, Clint Boling, Chris Carter, Darqueze Dennard, Wallace Gilberryabout an hour ago ColeyHarvey Coley HarveyA little late posting, but here's the #Bengals injury report: QUESTIONABLE: Adam Jones, Emmanuel Lamur, Chris Lewis-Harris, Reggie Nelson...about an hour ago pauldehnerjr Paul Dehner Jr.Amazing, there are six players officially battling an illness via injury report. Practicing, playing in rain not helping. #Bubbleabout an hour ago pauldehnerjr Paul Dehner Jr.Best news for #Bengals is A.J. Green listed as probable with his biceps bruise.about an hour ago pauldehnerjr Paul Dehner Jr.#Bengals injury report. Six questionable. http://t.co/652DPiyIFjabout an hour ago pauldehnerjr Paul Dehner Jr.Impromptu poll question. Which of three would you prefer for playoffs? #Bengals play 1) at Indy 2) home vs San Diego 3) home vs Baltimore?about an hour ago pauldehnerjr Paul Dehner Jr.RT @jschroeder011: @pauldehnerjr Any idea when playoff matchup times will be released? Wedding on Saturday the 3rd. #HELP // Sunday night.about an hour ago pauldehnerjr Paul Dehner Jr.RT @Christa4: @pauldehnerjr Why wait so long to do surgery? // Were hopeful could return from elbow prior. Shoulder dinged before season.about 2 hours ago pauldehnerjr Paul Dehner Jr.To be clear for all to never ask me about this again: Tyler Eifert will NOT play again at any point this season. #EndOfDiscussionabout 2 hours ago pauldehnerjr Paul Dehner Jr.Marvin finally confirms what we've been saying for more than a month. Tyler Eifert done, had shoulder surgery two weeks back.about 2 hours ago ColeyHarvey Coley HarveyLewis also confirms Adam Jones was sick today. Lewis was sick this week, too. Says: "I'm past the hard part." #Bengalsabout 2 hours ago ColeyHarvey Coley HarveyMarvin Lewis confirms Tyler Eifert is done for the year.Had left shoulder surgery about two weeks ago. The elbow took longer to heal,ML saysabout 2 hours ago pauldehnerjr Paul Dehner Jr.RT @AceRockefeller: @pauldehnerjr what's league average? // The mean is 35.about 2 hours ago pauldehnerjr Paul Dehner Jr.In case you hadn't hear yet, old friend Guns will be in house Sunday night. Ed Hochuli head referee for Bengals-Steelers.about 2 hours ago pauldehnerjr Paul Dehner Jr.The Hue Jackson Effect, otherwise known as, I'm not letting Andy Dalton define this team.about 2 hours ago pauldehnerjr Paul Dehner Jr.Related Hue Jackson Effect: Here's Dalton's percentage of passes 20+ yards -- 2011: 11.7%, 2012: 12.7%, 2013: 14.7%, 2014: 11.7%about 3 hours ago pauldehnerjr Paul Dehner Jr.Those interested in the Hue Jackson Effect, here's Andy Dalton's career attempts per game: 2011: 32.3, 2012: 33.0, 2013: 36.6, 2014: 29.6about 3 hours ago Latest on the Cincinnati Bengals »

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10 Best Tuolumne Pet Friendly Vacation Rentals - TripAdvisor - Book Pet Friendly Vacation Rentals in Tuolumne
Pet Friendly Tuolumne Vacation Rentals
Elder Access Tuolumne Vacation Rentals
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Vacation Rentals near Mountain Springs Golf Club
Pet Friendly Rentals and Dog Friendly Rentals in Tuolumne, CA Vacation Rentals USA California (CA) Tuolumne Pet Friendly Rentals in Tuolumne
We can't find prices for this accommodation From {rate_price} {rate_periodicity} Return to Map Clear all filters Any BedroomsAny GuestsPet friendlyKid friendlyWheelchair access1+ BathroomsGrillOther outdoor spaceGymInternetFireplaceParkingWi-FiAir ConditioningWasher/DryerAll poolsGarden or YardPrivate poolGame RoomPublic poolShared Tennis CourtCabin Vacation RentalCondominium/ApartmentPrivate RoomResort Vacation RentalSpecialty Vacation RentalVacation Rental HouseVillaHousekeeping IncludedMountain ViewsPrivate Fishing Lake/RiverWater ViewsWaterfront
SuitabilityPet friendly(11)Kid friendly(2)Wheelchair access(2)
More filters AmenitiesGrill(11)Other outdoor space(11)Gym(8)Internet(7)Fireplace(6)Parking(4)Wi-Fi(3)Air Conditioning(2)Washer/Dryer(2)All pools(1)Garden or Yard(1)Private pool(1)Game Room(0)Public pool(0)Shared Tennis Court(0)More AmenitiesGrill(11)Other outdoor space(11)Gym(8)Internet(7)Fireplace(6)Parking(4)Wi-Fi(3)Air Conditioning(2)Washer/Dryer(2)All pools(1)Garden or Yard(1)Private pool(1)Game Room(0)Public pool(0)Shared Tennis Court(0)Select None Property typeCabin Vacation Rental(11)Condominium/Apartment(0)Private Room(0)Resort Vacation Rental(0)Specialty Vacation Rental(0)Vacation Rental House(0)Villa(0)More Property typeCabin Vacation Rental(11)Condominium/Apartment(0)Private Room(0)Resort Vacation Rental(0)Specialty Vacation Rental(0)Vacation Rental House(0)Villa(0)Select None Distinctive FeaturesHousekeeping Included(0)Mountain Views(0)Private Fishing Lake/River(0)Water Views(0)Waterfront(0)More Distinctive FeaturesHousekeeping Included(0)Mountain Views(0)Private Fishing Lake/River(0)Water Views(0)Waterfront(0)Select None Don't let other travelers get your favorite Tuolumne area vacation rental. You're so close to securing your perfect getaway. Book today.
11 Matching Rentals in the Tuolumne AreaView all 25 rentals
1 / 182 BR / 2 BA with Loft, Sleeps 8-10 Near town...Twain Harte2 Bedrooms, 2 Bathrooms, Sleeps 11 Quick View UmtoXzNfWXVzother travelers have booked this property Check in Check out Show Prices Amenities & Details Private Outdoor Pool (Unheated)Satellite TVDVD PlayerParkingGrillWasherCentral HeatingInternet AccessSuitability Pet friendlyKid friendlySmoking allowedAbout this property You'll be coming back to this one! Pretty much every amenity you can want - including Pet-Friendly! Beautiful kitchen with granite countertops; overhead fans; flat screen TV. Note: Very steep stairs to Loft area where roof is pitched, so probably best to plan on older children for this area....View all property information Location Information Twain Harte, California 95383Cabin - 2 Bedrooms, 2 Bathrooms, Sleeps 11Make Inquiry 1 / 21(12)Very goodTwain Harte Vacation Rentals & Dodge Ridge LodgingTwain Harte4 Bedrooms, 2 Bathrooms, Sleeps 12 Quick View VVpGXzI0X0s3aQ==other travelers have booked this property Check in Check out Show Prices Payment Protection Amenities & Details Central HeatingSatellite TVWi-FiGrillBalconyPatioDVD PlayerWasherSuitability Pet friendlyKid friendlySmoking allowedQuiet, cozy CabinReviewed May 23, 2017Clean Cabin with comfortable queen size beds. Stairs required to get to the Bedroom upstairs with two twin size beds is somewhat dangerous to use. Entry is from one of the...Beautiful welcoming cabinReviewed January 13, 2017It was easy to find, and had a very welcoming vibe. You can often look out the kitchen window and see the deer eatingSee all reviews About this property Free Wifi – Twain Harte Lake Access – Four Bedroom/ Two Bath – Sleeps 8 Comfortably, Sleeps 10 With Sofa Bed – Big Screen HD Cable TV – Large Driveway – Yosemite – Dodge Ridge Ski Area – No Smoking
Our mission at Twain Harte Cabin Rentals is to provide exceptional service and high quality lodging,...View all property information Location Information Twain Harte, California 95383Cabin - 4 Bedrooms, 2 Bathrooms, Sleeps 12Make Inquiry 1 / 10(19)Very goodSpacious home- garage, deck, gourmet kitchen...Twain Harte3 Bedrooms, 3 Bathrooms, Sleeps 14 Quick View UUlxXzFfcElwother traveler has booked this property Check in Check out Show Prices Amenities & Details GrillSatellite TVDVD PlayerSuitability Pet friendlyKid friendlySmoking allowedTwain Harte large houseReviewed February 15, 2017This was very spacious and the kitchen had enough appliances and dishes. The decor was from the 70's or 80's. Hot water only available for one shower at a time. The heater...See all reviews About this property 3 Bedroom, 2.5 Bath, Sleeps 12-14. 2400 square feet - roomy and quiet. Large corner lot in Brentwood Park subdivision of Twain Harte; paved, level access with room to park a boat. Two-car Garage and wraparound deck; extra large common area for group gatherings. Gourmet kitchen; open/airy floor...View all property information Location Information Twain Harte, California 95383Cabin - 3 Bedrooms, 3 Bathrooms, Sleeps 14Make Inquiry 1 / 15(23)Very goodNice family home- near lake, fenced backyard...Twain Harte3 Bedrooms, 2 Bathrooms, Sleeps 10 Quick View UlNzXzJfNm9yother travelers have booked this property Check in Check out Show Prices Amenities & Details DVD PlayerGrillInternet AccessPatioParkingSuitability Pet friendlyKid friendlySmoking allowedKid and dog paradiseReviewed August 8, 2015Our 3 day stay with 1,6 and 8 year old grandkids, along with our 2 dogs was fabulous. The cabin is clean, nicely decorated, and roomy with lots of amenities and upgrades. The...See all reviews About this property 2200 s.f. of spacious living; easy access. Rare 1/2 acre in wooded setting with completely fenced backyard; large kitchen; new flooring; 10-in-1 game table and lots of children's toys. Horseshoe pit for outdoor fun! Two great decks; secluded & private, yet just a short walk to Downtown Twain...View all property information Location Information Twain Harte, California 95383Cabin - 3 Bedrooms, 2 Bathrooms, Sleeps 10Make Inquiry 1 / 15(13)Very goodVintage Twain Harte cabin- deck, picture window...Twain Harte2 Bedrooms, 1 Bathroom, Sleeps 8 Quick View Check in Check out Show Prices Amenities & Details DVD PlayerSatellite TVWi-FiGrillSuitability Pet friendlyKid friendlySmoking allowedAbout this property Top-of-the-Line vintage cabin. Walk to downtown Twain Harte; nice new wraparound deck with built-in seating; living room window seat in front of picture window is quaint. Open beam ceiling; outdoor wooded area great for pets. Lots of rustic charm; knotty pine throughout; furnishings are...View all property information Location Information Twain Harte, California 95383Cabin - 2 Bedrooms, 1 Bathroom, Sleeps 8Make Inquiry 1 / 16(1)Average3 BR / 2 BA / Family Room; Sleeps 6-8. Secluded!Twain Harte3 Bedrooms, 2 Bathrooms, Sleeps 8 Quick View c0dXXzFfV3Vaother traveler has booked this property Check in Check out Show Prices Amenities & Details Satellite TVDVD PlayerAir ConditioningGrillSuitability Pet friendlyKid friendlySmoking allowedAbout this property Look no further for that mountain experience - quiet and serene on 1.5 acres with all the amenities, including satellite TV. Built almost 40 years ago, this beautiful cabin has been lovingly refurbished with up-to-date furnishings. A small private nearby lake (Lakewood Park Lake) is available for...View all property information Location Information Twain Harte, California 95383Cabin - 3 Bedrooms, 2 Bathrooms, Sleeps 8Make Inquiry 1 / 17(3)ExcellentBRAND NEW! 3BR/2BA, Walk to Town, Lake...Twain Harte3 Bedrooms, 2 Bathrooms, Sleeps 8 Quick View UWVFXzFfeGVIother traveler has booked this property Check in Check out Show Prices Amenities & Details Central HeatingInternet AccessGrillDVD PlayerSatellite TVSuitability Pet friendlyKid friendlySmoking allowedAbout this property You won't want to leave this one! And you will definitely be back! Lovely shaded back deck with wooded view. Fans throughout . Your every comfort has been anticipated, including wireless internet! Close to Twain Harte Golf and the shopping and restaurants in quaint downtown Twain Harte. Short...View all property information Location Information Twain Harte, California 95383Cabin - 3 Bedrooms, 2 Bathrooms, Sleeps 8Make Inquiry 1 / 15(18)ExcellentGreat family home + studio - a/c, deck, pool...Twain Harte4 Bedrooms, 3 Bathrooms, Sleeps 14 Quick View SXM3XzFfd09Zother traveler has booked this property Check in Check out Show Prices Amenities & Details GrillDVD PlayerInternet AccessSatellite TVPatioAir ConditioningSuitability Pet friendlyKid friendlySmoking allowedAbout this property Got Teens? Two separate units on same lot! In main house: Large open floor plan; two decks (one covered); fans throughout; air conditioning in main living area with fans provided for other areas. Nicely decorated and comfortable. Tasteful country appointments. Separate unit: Large studio...View all property information Location Information Twain Harte, California 95383Cabin - 4 Bedrooms, 3 Bathrooms, Sleeps 14Make Inquiry 1 / 13(20)Very goodCharming lake cabin- pets ok, Twain Harte Lake...Twain Harte4 Bedrooms, 3 Bathrooms, Sleeps 12 Quick View Check in Check out Show Prices Amenities & Details Wi-FiGrillSatellite TVDVD PlayerParkingSuitability Pet friendlyKid friendlySmoking allowedAbout this property Lots of rustic charm and local memorabilia in one of Twain Harte's first lake cabins. Approx. 1500 sq. ft. Breathtaking forest/sunset view! Child/pet-safe deck; large screen porch; hiking trails right on the property; quiet and secluded at the very end of Golf Club Drive. Handicapped...View all property information Location Information Twain Harte, California 95383Cabin - 4 Bedrooms, 3 Bathrooms, Sleeps 12Make Inquiry 1 / 12(20)Very goodGreat home- near downtown & lake, handicapped...Twain Harte3 Bedrooms, 2 Bathrooms, Sleeps 10 Quick View UUlkXzJfRlhNother travelers have booked this property Check in Check out Show Prices Amenities & Details Internet AccessDVD PlayerSatellite TVGrillSuitability Pet friendlyKid friendlySmoking allowedAbout this property Great location; walk to town. Approx. 1500 s.f. Back and front child-safe decks; yard totally fenced; handicapped accessible. Large common area; cozy and comfortable with every amenity. You'll feel right at home! High Speed Internet line a big PLUS!
Additional $100.00 deposit required for Pets...View all property information Location Information Twain Harte, California 95383Cabin - 3 Bedrooms, 2 Bathrooms, Sleeps 10Make Inquiry List your property for free! List your vacation rental where TripAdvisor travelers can find it. Add a Listing 1 / 12(13)Very good2 BR / 1 BA Bungalow Near Twain Harte Lake!Twain Harte2 Bedrooms, 1 Bathroom, Sleeps 7 Quick View dkhFXzFfN1c2other traveler has booked this property Check in Check out Show Prices Amenities & Details PatioGrillSatellite TVDVD PlayerSuitability Pet friendlyKid friendlySmoking allowedAbout this property You'll be charmed by this completely remodeled 800 square foot bungalow close to Twain Harte Lake. It's quiet, secluded setting with shady front deck and small private back deck will keep you coming back for sure. Great knotty pine interior; ceiling fans; new carpet & flooring. Pet-friendly &...View all property information Location Information Twain Harte, California 95383Cabin - 2 Bedrooms, 1 Bathroom, Sleeps 7Make Inquiry Tuolumne Flight and Weather Info Low airfares recently found by TripAdvisor travelers
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BBB Business Profile | The T45 Source
Home > Ohio > Bay Village > Not Elsewhere Classified > The T45 Source
The T45 Source
(567) 525-8450
40544 PO Box

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text:
Nu-Chrome Restoration has had their Business Review viewed 24 time(s) over the last 30 days. Click to view where these inquiries originated.
Nu-Chrome Restoration has received 0 out of 5 stars based on 0 Customer Reviews and a BBB Rating of NR.
Complaint: I have sent some very rare 1937 Dodge Coupe parts to be chromed. I also sent a $1000 deposit. Don or anyone else will not answer the phone. I have sent emails and left messages. No reply. I need my parts done or not and my money back if not. I have been trying for over 3 months to get ahold of anyone. Nothing.Desired Settlement: These parts are not replaceable. I want my parts back done or not and my money if they are not done. MAIN THING IS THE PARTS!
Complaint: Originally mailed two items to be chromed. Found out the business was not good. Informed them that all I wanted was parts returned. No work was needed,all they had to do was mail the items back. Over a week to mail something back??? Just want my parts back.Desired Settlement: Return parts that were mailed to them. At my cost.
Complaint: I sent a rare car part to be restored to Nu-Chrome. It was received by them on December 4th. Shortly afterwards I sent an email requesting confirmation of receipt and an estimate of when I could expect to have the work completed. Numerous messages and phone calls to obtain the status were unanswered by Nu-Chrome. In the first week of January, I received a call back from "***** who indicated that he had "found" my part and that it would be put in the line for repair and that it would be completed in a couple of weeks. Subsequently I called back two weeks later, and continued to call and send messages with no response. I finally received a response from "**** the first week in February, in which he stated I my part would be completed in the "next couple of weeks." Three weeks later I again left voicemail and email messages requesting status. On March 15th I received an email from *** stating that their shop had been closed for a couple of weeks due to a "legal issue" and that my part would be done by the end of the month. I have sense requested that no work be done on my part, to return it overnight air with insurance. I have not received a response from the March 15th request to return my part.Desired Settlement: Return my part via over night air, insured.
Complaint: On Dec 10, 2013 I sent a 1965 Pontiac GTO rear panel to be repaired and rechromed. I was told I would have my panel in one month. I have called over and over again asking for a response on the status of my piece. I was finally contacted one month ago in Feb. that the piece was to be completed and sent the following week. Here we are again a month later and still no product. Tried to contact Nu-Chrome once again and still no response. The piece cost me $400 and I paid Nu-Chrome $400 to do the work. I am out $88 plus shipping.Desired Settlement: I would like to have my 1965 GTO rear piece either completed and delivered or my money refunded and the piece returned.