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Patent US6869848 - Method of manufacturing flash memory device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA method of manufacturing a flash memory device, in which a spike annealing is performed after an ion implantation for controlling a threshold voltage. Therefore, it is possible to obtain a uniform and stabilized doping profile for controlling a threshold voltage, to use BF2 ions as a dose for controlling...http://www.google.com/patents/US6869848?utm_source=gb-gplus-sharePatent US6869848 - Method of manufacturing flash memory deviceAdvanced Patent SearchTry the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents.Publication numberUS6869848 B2Publication typeGrantApplication numberUS 10/727,470Publication dateMar 22, 2005Filing dateDec 4, 2003Priority dateJun 5, 2003Fee statusPaidAlso published asUS20040248366Publication number10727470, 727470, US 6869848 B2, US 6869848B2, US-B2-6869848, US6869848 B2, US6869848B2InventorsNoh Yeal KwakOriginal AssigneeHynix Semiconductor Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (3), Referenced by (37), Classifications (35), Legal Events (7) External Links: USPTO, USPTO Assignment, EspacenetMethod of manufacturing flash memory device
US 6869848 B2Abstract
A method of manufacturing a flash memory device, in which a spike annealing is performed after an ion implantation for controlling a threshold voltage. Therefore, it is possible to obtain a uniform and stabilized doping profile for controlling a threshold voltage, to use BF2 ions as a dose for controlling a threshold voltage to obtain a shallow channel junction, to obtain different doping profiles in the channel junction depending on the process conditions and the atmosphere in the spike annealing equipment, and to control a doping profile for controlling a threshold voltage.
performing an ion implantation for controlling a threshold voltage on a semiconductor substrate; performing a spike annealing for controlling a doping concentration and a doping profile of an implanted dopant, wherein the spike annealing is performed under NH3, H2, or N2 atmosphere at a temperature in the range of 900° C. to 1,100° C. with a heating rate of 100° C./sec to 250° C./sec; forming a device isolation film for isolating an active area and a field area on the semiconductor substrate; forming a gate electrode in which a tunnel oxide film, a floating gate electrode, a dielectric film, and a control gate electrode are deposited on the active area; and performing an ion implantation for forming junctions on the semiconductor substrate in both sides of the gate electrode to form a DDD junction structure. 2. The method of manufacturing a flash memory device according to claim 1, wherein the ion implantation for controlling a threshold voltage is performed by using a p-type dopant with an ion implantation energy of 5 KeV to 50 KeV and a dose of 1E11 ion/cm2 to 1E13 ion/cm2.
3. The method of manufacturing a flash memory device according to claim 2, wherein BF2 is used as the p-type dopant.
performing an ion implantation for controlling a threshold voltage on a semiconductor substrate; performing a spike annealing for controlling a doping concentration and a doping profile of an implanted dopant, wherein the spike annealing is performed under NH3, H2, or N2 atmosphere; forming a device isolation film for isolating an active area and a field area on the semiconductor substrate; forming a gate electrode in which a tunnel oxide film, a floating gate electrode, a dielectric film, and a control gate electrode are deposited on the active area; and performing an ion implantation for forming junctions on the semiconductor substrate in both sides of the gate electrode to form a DDD junction structure. 5. The method of manufacturing a flash memory device according to claim 4, wherein the ion implantation for controlling a threshold voltage is performed by using a p-type dopant with an ion implantation energy of 5 KeV to 50 KeV and a dose of 1E11 ion/cm2 to 1E13 ion/cm2.
6. The method of manufacturing a flash memory device according to claim 5, wherein BF2 is used as the p-type dopant.
Methods of manufacturing a flash memory devices are disclosed, and more particularly, a manufacturing method is disclosed that is capable of stabilizing a threshold voltage of a flash memory device which uses a high voltage.
Recently, for an implementation of a flash memory device, a self-aligned shallow trench isolation (SA-STI) has been adapted to form device isolation films to prevent damages on a tunnel oxide film and improve poor device characteristics. Meanwhile, for applying a high voltage to a well area and a junction area of the transistors which are formed according to the aforementioned method, the junction between a source and a drain has been formed as a double doped drain (DDD) junction instead of a pulse junction by using a plug implantation method. However, the number of the DDD junctions is inevitably limited to improve a breakdown voltage in preparation for application of a high voltage. In this case, the lowered ion concentration in the source area and the drain area makes an operating voltage of 1.0V or less which is normally used in a typical transistor appear to be relatively high. In addition, with a p-type dopant injected by the ion implantation to control a threshold voltage of a channel area, it is difficult to obtain an operating voltage less than 1.0V even by the implantation with a minimum quantity of ions. Typically, in order to improve a breakdown voltage, the ion implantation is performed with B11 ions instead of BF2 ions, which have a possibility of remnants in the junction area. However, even if the ion implantation is performed with boron B11, the boron may react in the subsequent heat treatments so that the injected dopant may be susceptible to a transient enhanced diffusion (TED).
Methods of manufacturing a flash memory device are capable of obtaining a uniform and stabilized doping profile for controlling a threshold voltage.
One disclosed method comprises: performing an ion implantation for controlling a threshold voltage on a semiconductor substrate; performing a spike annealing for controlling a doping concentration and a doping profile of an implanted dopant; forming a device isolation film for isolating an active area and a field area on the semiconductor substrate; forming a gate electrode in which a tunnel oxide film, a floating gate electrode, a dielectric film, and a control gate electrode are deposited on the active area; and performing an ion implantation for forming junctions on the semiconductor substrate in both sides of the gate electrode to form a DDD junction structure.
In another embodiment, the ion implantation for controlling a threshold voltage is performed by using a p-type dopant with an ion implantation energy of 5 KeV to 50 KeV and a dose of 1E11 ion/cm2 to 1E13 ion/cm.
In another embodiment, BF2 is used as the p-type dopant.
In another embodiment, the spike annealing is performed under NH3, H2, or N2 atmosphere at a temperature in the range of 900° C. to 1,100° C. with a heating rate of 100° C./sec to 250° C./sec.
The aforementioned aspects and other features will be explained in the following description, taken in conjunction with the accompanying drawings, wherein:
FIGS. 1A to 1D are cross-sectional views for explaining a disclosed method of manufacturing a flash memory device; and
FIG. 2 is a graph showing changes of concentrations of boron ions and fluorine ions as a result of the spike annealing.
The disclosed methods will be described in detail by way of a preferred embodiment with reference to the accompanying drawings, in which like reference numerals are used to identify the same or similar parts.
According to an embodiment, the DDD junction is used as a junction for a high voltage NMOS in an X-decoder transistor or a cell transistor of an NAND flash device. This is because a high voltage is applied to a p-well area and a junction area of the aforementioned transistors. In order to increase a breakdown voltage in preparation for application of the high voltage, a post thermal treatment is performed by a BF2 ion implantation and a spike annealing. This allows a flash memory device to be electrically stable due to decrease of concentration of the dopant remaining in the channel junction area.
FIGS. 1A to 1D are cross-sectional views for explaining a disclosed method of manufacturing a flash memory device.
Referring to FIG. 1A, an ion implantation is performed to adjust a threshold voltage of the device on a semiconductor substrate 10. A screen oxide (not shown) may be formed on the semiconductor substrate 10 to protect it before the ion implantation.
Specifically, in order to clean the semiconductor substrate 10 before the screen oxide is formed, a pre-cleaning process is performed by using a diluted HF (DHF) in which H2O and HF are mixed at a 50:1 rate and a standard cleaning −1 (SC-1) solution including NH4OH, H2O2, and H2O. Otherwise, it is possible to use a buffered oxide etchant (BOE) in which NH4F and HF are mixed at a rate of 100:1 to 300:1 and a SC-1 solution including NH4OH, H2O2, and H2O. Then, a wet or dry etching is performed at a temperature of 750° C. to 800° C. to form a screen oxide having a thickness of 30 to 120 Å. In this case, a p-type semiconductor substrate is used.
In order to control a threshold voltage, a p-type dopant is injected into a surface channel with an ion implanting energy of 5 KeV to 50 KeV and a dose of 1E11 ion/cm2 to 1E13 ion/cm2 to form an ion layer 12 for controlling a threshold voltage. Preferably, a dose of 5E12 to 5E13 ion/cm2 is injected. Also, 49BF2 is used as the p-type dopant and the ion implantation is performed with a tilt of 3° to 13° to prevent channeling as much as possible. The aforementioned conditions for the ion implantation are not limited to the things that have been described but can be anything which can create junctions on the surface of the semiconductor substrate and does not cause any other leakage currents and generate leakage between the well area and the junction area. In addition, the ion implantation can be directly performed without any screen oxide.
Referring to FIGS. 1B and 1C, the injected ions are stabilized by the spike annealing. Then, a tunnel oxide film 16 and a first poly-silicon film 18 are formed on the semiconductor substrate 10 in a sequential manner.
Specifically, an out-diffusion is performed for F19 ions injected with the p-type dopant by the spike annealing in H2 or N2 atmosphere. At the same time, an out-gassing of the dopant for controlling a threshold voltage is performed. Then, the spike annealing is performed at a temperature of 900° C. to 1,100° C. A ramp-up rate (heating rate) of the spike annealing is set to 100° C./sec to 250° C./sec. The spike annealing is performed in N2 atmosphere in order to prevent growth of native oxides during the heat treatment of a high temperature and in H2 or NH3 atmosphere in order to improve an out-diffusion capability of the F19 ion. While the out-gassing of the fluorine ions (F19) is performed, the out-gassing of the boron ions (B) injected together with the F19 is also performed.
FIG. 2 is a graph showing changes of concentrations of the boron ions and the fluorine ions caused by the spike annealing.
A dotted line in FIG. 2 corresponds to changes of concentration of the fluorine ions, and a solid line in FIG. 2 corresponds to changes of concentration of the boron ions. Also, the lines (A) show changes of concentration of BF2 ions injected to control a threshold voltage depending on depth, and the lines (B) show changes of concentrations of the boron ions and fluorine ions after the spike annealing depending on depth. As shown in FIG. 2, once the spike annealing is performed after the ion implantation for controlling a threshold voltage, the out-gassing is performed for the boron ions as well as the fluorine ions as described above so that a boron ion layer can be formed on a substrate with a low concentration.
By the aforementioned spike annealing using the BF2 ions, it is possible to obtain a uniform profile of the dopant for controlling a threshold voltage, which is difficult to obtain by the ion implantation with a minimum dose. In other words, the ion implantation for controlling a threshold voltage can be performed with the BF2 ions, which have not been used in the conventional method due to degradation of film quality caused by the F19. For this reason, it is possible to obtain the operating voltage less than 1.0V. In addition, it is possible to obtain a doping profile for controlling a threshold voltage with a steep incline, thereby preventing degradation of the oxide film quality caused by a haul effect in an NAND flash device, which utilizes FN tunneling. Also, it is possible to obtain a uniform doping profile and to control and stabilize a threshold voltage because the concentration of the remaining B11 dose, which has been injected into the channel junction area, is decreased due to the out-gassing of F19 during the spike annealing. It is possible to obtain different doping results in the channel junction area and to control the doping profile for controlling a threshold voltage depending on the atmosphere in the spike annealing equipment and the process conditions such as an annealing temperature, a heating rate, gases, and a processing time. Furthermore, the implanted dopant can be thermally stabilized by the spike annealing.
After the out-gassing by the spike annealing, a tunnel oxide film 16 is formed by an oxidation process. The oxidation process is performed by a wet oxidation at a temperature in the range of 750 to 800° C. and an annealing is performed by using N2 at a temperature of 900 to 910° C. for a period of 20 to 30 minutes. A chemical vapor deposition (CVD), a low pressure CVD (LP-CVD), a plasma enhanced CVD (PE-CVD), or an atmospheric pressure CVD (AP-CVD) is performed at a temperature of 580° C. to 620° C. with a pressure of 0.1 torr to 3.0 torr to deposit a poly-silicon film 18 on the tunnel oxide film 16. The first poly-silicon film 18 is an amorphous silicon film having a thickness of 250 to 500 Å doped by SiH4 or Si2H6 and PH3 gases with a p-type material having a concentration of approximately 1.5E20 atoms/cc to 3.0E20 atoms/cc. As a result, a particle size of the first poly-silicon film 18 is minimized to prevent an electric field convergence. The first poly-silicon film 18 acts as a buffer layer during the device isolation films are formed and as a part of the floating gate to be formed by the subsequent processes.
Referring to FIG. 1D, device isolation films 20 are formed by a patterning process, and then a second poly-silicon film 22 is deposited. A floating gate electrode 24 is formed by a planarizing process or a patterning process. A dielectric film 26 is formed along with the steps on a top surface of a whole semiconductor structure, and a film for a control gate electrode is deposited thereon. Then, a control gate electrode 32 is formed by a patterning process and a junction area 34 is formed by an ion implantation.
Specifically, a pad nitride film (not shown) is deposited on the first poly-silicon film 18 and an SA-STI process is applied to form trenches of a STI structure (not shown) on the semiconductor substrate 10 so that the semiconductor substrate 10 is divided into an active area in which devices are to be formed and a field area by which the devices are isolated. The trenches of the STI structure are buried with a high-density plasma (HDP) oxide film and then the first poly-silicon film 18 is exposed by a planarizing process and a nitride film strip process. On a top surface of the whole structure, a second poly-silicon film 22 is deposited and then a patterning process or a planarizing process is performed to form a floating gate electrode 24 including the first and second poly-silicon films 18 and 22. The second poly-silicon film 22 is formed by depositing a silicon film made of the same material as the first poly-silicon film 18 to have a thickness of 400 to 1,000 Å. In addition, the pad nitride film is formed by the LP-CVD method to have a thickness of 900 to 2,000 Å.
On a top surface of the whole structure, a dielectric film 26 including a first oxide film, a nitride film, and a second oxide film is deposited along with the step thereon so as to constitute an ONO structure (SiO2—Si3N4—SiO2). In the deposition of the dielectric film 26 having an ONO structure, the first and second oxide films (not shown) are formed by depositing a hot temperature oxide where dichloro silane (DCS; SiH2Cl2) and N2O gases are used for a source due to its high dielectric voltage level and an excellent time dependent dielectric breakdown (TDDB) characteristics. In addition, the nitride film (not shown) between the first oxide film and the second oxide film is deposited by a CVD, a PE-CVD, an LP-CVD, or an AP-CVD of which process conditions can bring about a good step coverage where the DCS and NH3 gases are used in a low pressure of 1 to 3 torr at a temperature of 650 to 800° C. As a result of the aforementioned deposition processes, the first oxide film is grown to a thickness of 35 to 100 Å, the nitride film is grown to a thickness of 50 to 100 Å, and the second oxide film is grown to a thickness of 35 to 150 Å. In order to improve film quality of the ONO structure and reinforce the interfaces between respective layers after the ONO process, a steam annealing may be performed to oxidize it to a thickness of 150 to 300 Å based on a monitoring wafer by a wet oxidation method at a temperature of 750 to 800° C. Furthermore, during the ONO process and the steam annealing, each process may be performed without any delay or within very short delay, thereby preventing growth of native oxides and contamination by pollutants.
The film for a control gate electrode includes a third poly-silicon film 28 and a tungsten silicide film 30. Preferably, a deposition of the third poly-silicon film 28 is performed by a CVD, a PE-CVD, an LP-CVD, or an AP-CVD to form an amorphous silicon film at a temperature of 510 to 550° C. under a pressure of 1.0 to 3.0 torr and to form a dual film structure having a doped film and an undoped film in order to prevent diffusion of the fluoric acid which is probably substituted into the dielectric film 26 and raises a thickness of the oxide film and creation of WPx layer formed by the bonds between tungsten (W) and phosphorous (P). As a result, it is possible to prevent blowing-up phenomena of a tungsten silicide film 30 which will be formed thereon. A proportion between the doped film and the undoped film is set to 1:2 to 6:1, and an amorphous silicon film having a thickness of 500 to 1,500 Å is formed to bury the space between the second poly-silicon films 22, whereby it is possible to prevent a gap formation when a tungsten silicide film 30 is deposited and reduce a resistance of the word line. Also, in order to form the third poly-silicon film 28 having a dual film structure, it is preferable that SiH4 or Si2H6 and PH3 gases are used for forming the doped film, the PH3 gas is cut off, and then the undoped film is formed in a sequential manner. Advantageously, the tungsten silicide film 30 is formed to have a proper step coverage at a temperature of 300 to 500° C. by the reaction of WF6 and DCS (SiH2CL2) or MS (SiH4) which contains a small quantity of fluorine and has a low post annealed stress and a high bonding stress, and the film is grown with a stoichiometric ratio of 2.0 to 2.8 which corresponds to the number capable of minimizing the word line resistance Rs. An ARC layer (not shown) is deposited on the tungsten silicide film 30 by using SiOxNy or Si3N4. Then, an etching process with a gate mask and another etching process with a self-aligned mask are performed to form a control gate electrode 32. The source/drain junction area is formed as a DDD junction in order to improve a breakdown voltage in preparation for application of a high voltage to constitute a flash memory device. Such a DDD junction requires a lower positive type doping level in its channel junction area.
As described above, it is possible to obtain a uniform doping profile for controlling a threshold voltage and stabilize it by the spike annealing after the ion implantation for controlling a threshold voltage.
In addition, it is possible to use BF2 ions as a dose for controlling a threshold voltage, thereby obtaining a shallow channel junction.
In addition, it is possible to obtain different doping results in the channel junction and to control the doping profile for controlling a threshold voltage depending on the process conditions and the atmosphere in the spike annealing equipment.
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Classification438/289, 257/E29.129, 257/E29.055, 438/259, 257/E21.422, 257/E21.336, 257/E21.324, 257/E29.304, 438/268, 438/270, 257/E21.209International ClassificationH01L21/8247, H01L21/28, H01L27/115, H01L29/423, H01L29/10, H01L21/265, H01L29/788, H01L21/336, H01L21/324, H01L29/792Cooperative ClassificationH01L29/66825, H01L21/28273, H01L21/26513, H01L29/7883, H01L29/105, H01L21/324, H01L29/42324European ClassificationH01L29/66M6T6F17, H01L21/28F, H01L21/265A2, H01L21/324, H01L29/10D2B3, H01L29/788B4, H01L29/423D2B2Legal EventsDateCodeEventDescriptionMar 22, 2004ASAssignmentOwner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OFFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KWAK, NOH YEAL;REEL/FRAME:015112/0618Effective date: 20030825Aug 23, 2005CCCertificate of correctionSep 6, 2006ASAssignmentOwner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OFFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HYNIX SEMICONDUCTOR INC.;REEL/FRAME:018207/0057Effective date: 20050905Owner name: STMICROELECTRONICS S.R.L., ITALYFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HYNIX SEMICONDUCTOR INC.;REEL/FRAME:018207/0057Effective date: 20050905Sep 17, 2008FPAYFee paymentYear of fee payment: 4Jul 30, 2012FPAYFee paymentYear of fee payment: 8Aug 10, 2015ASAssignmentOwner name: SK HYNIX INC., KOREA, REPUBLIC OFFree format text: CHANGE OF NAME;ASSIGNOR:HYNIX SEMICONDUCTOR INC.;REEL/FRAME:036319/0271Effective date: 20120323Owner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OFFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NUMONYX B. V.;REEL/FRAME:036319/0139Effective date: 20090522Sep 9, 2016FPAYFee paymentYear of fee payment: 12RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services


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recommended that you rely on product packaging or manufacturer information. Features: -The motor is mounted inside the roller on special vibration insulators..-With control options, this projection screen can be operated from any remote location..-NTSC, HDTV and WideScreen format projection screens have black borders on all four sides..-Warranted for one year against defects in materials and workmanship. Options: -Depending on surface, available in sizes through 12' x 12' and 15' NTSC..-Custom sizes available. Color/Finish: -Motor-in-roller with automatic ceiling closure that can easily be finished to match ceiling.. Envoy electrically operated projection screen. Designed for recessed installation above ceiling in conference and meeting rooms, executive facilities and training centers. Motor-in-roller with automatic ceiling closure that can easily be finished to match ceiling. Projector Projectors Rear Screens Theater Home Projection AV 10 161 169 180 Aspect BoardroomOffice Boardrooms Ceiling Classroom Classrooms Gain Hardwired HDTV169 Offices Ratio mothers day gifts About this item Important Made in USA Origin Disclaimer: For certain items sold by Walmart on Walmart.com, the displayed country of origin
recommended that you rely on product packaging or manufacturer information. Features: -The motor is mounted inside the roller on special vibration insulators..-With control options, this projection screen can be operated from any remote location..-NTSC, HDTV and WideScreen format projection screens have black borders on all four sides..-Warranted for one year against defects in materials and workmanship. Options: -Depending on surface, available in sizes through 12' x 12' and 15' NTSC..-Custom sizes available. Color/Finish: -Motor-in-roller with automatic ceiling closure that can easily be finished to match ceiling.. Envoy electrically operated projection screen. Designed for recessed installation above ceiling in conference and meeting rooms, executive facilities and training centers. Motor-in-roller with automatic ceiling closure that can easily be finished to match ceiling. Projector Projectors Rear Screens Theater Home Projection AV 10 161 169 180 Aspect BoardroomOffice Boardrooms Ceiling Classroom Classrooms Gain Hardwired HDTV169 Offices Ratio mothers day gifts DR3241
The motor is mounted inside the roller on special vibration insulators. With control options, this projection screen can be operated from any remote location. NTSC, HDTV and WideScreen format projection screens have black borders on all four sides. Warranted for one year against defects in materials and workmanship
Depending on surface, available in sizes through 12' x 12' and 15' NTSC. Custom sizes available
Specifications Manufacturer Part Number: 112051 Finish: Glass Beaded Model: 112051 Mount Type: Ceiling Recessed Brand: Draper Show Customer Reviews Write a review Be the first to review this item. Share your rating and review so that other customers can decide if this is the right item for them.
About our prices We’re committed to providing low prices every day, on everything. So if you find a current lower price from an online retailer on an identical, in-stock product, tell us and we’ll match it. See more details at Online Price Match. Compute- app-4983792-2-50901764, DC- prod-dal1, ENV- prod-a, Ver- 46.0.0, SHA- c9b416a71f091f079f265e67f72e1fe193237f49, Log- 9246ea68-78b2-156b99bc288000 Site Information Be the first to save! Email Address Sign up Privacy Policy Stay connected Mobile apps Help Feedback MoneyCenter Privacy & Security CA Privacy Rights Terms of Use Walmart services See All Services Walmart MoneyCenter Walmart Credit Card Product Care Plans Walmart Pay Get to know us About Walmart.com Corporate Suppliers Marketplace Careers @WalmartLabs Walmart.com Terms of Use About Our Ads Affiliate Program CA Privacy Rights Privacy & Security Customer service Returns Policy Product Recalls Int’l Customers Tax Exempt Program Contact Us Feedback Store Pickup In the spotlight Expand Baby Cribs Strollers Diapers Baby Feeding Car Seats Expand Electronics Cut the Cable Computers TVs iPads & Tablets Expand Fitness Exercise Machines Vitamins Ellipticals Treadmills Fitbit Expand Keep Cool Air Conditioners Fans Swimming Pools Pool Toys Popular Products Expand International Sites Argentina Brazil Canada Chile China Japan Mexico United Kingdom © Walmart Stores, Inc. To ensure we’re able to help you as best we can, please include your reference number: Ref:

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text:
5,3611547
@physicsmichael "there should be one, and preferably only one, obvious way to do it." import this
@Jeff Your first way. and has higher precedence than or.
5,70611733
if not len(a) & 1 and not len(b) & 1:
share|improve this answer answered Aug 24 at 13:21
201384 times

value: This website is a question and answer website for professional and enthusiast programmers. It is the flagship site of the Stack Exchange Network, created in 2008 by Jeff Atwood and Joel Spolsky.


text:
ALCOHOL COMPANY HAS RECORD PROFIT; The American Commercial Earns $924,813 in First 9 Months; Its Best Yet. EQUAL TO $3.54 A SHARE Results of Operations Announced by Other Corporations With Comparative Figures. - The New York Times
Archives|ALCOHOL COMPANY HAS RECORD PROFIT; The American Commercial Earns $924,813 in First 9 Months; Its Best Yet. EQUAL TO $3.54 A SHARE Results of Operations Announced by Other Corporations With Comparative Figures.
https://nyti.ms/1Y4SjFM
ALCOHOL COMPANY HAS RECORD PROFIT; The American Commercial Earns $924,813 in First 9 Months; Its Best Yet. EQUAL TO $3.54 A SHARE Results of Operations Announced by Other Corporations With Comparative Figures.
November 15, 1936, Section F, Page 5Buy Reprints
In announcing the result of operations of the American Commercial Alcohol Company, Russell R. Brown, president, said that business and profits during the nine months ended on Sept. 30 were the greatest the corporation has known. View Full Article in Timesmachine »

value: This website is an American daily newspaper based in New York City with a worldwide readership. Founded in 1851, the Times has since won 132 Pulitzer Prizes, the most of any newspaper, and has long been regarded within the industry as a national "newspaper of record".


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3 bedroom terraced house for sale in 6 Grace Street, Carlisle, Cumbria, CA1
www.rightmove.co.uk/property/56155081
Beautifully presented 3 bed mid terraced house with UPVC double glazing and gas C/H, fully refurbished to an excellent standard and briefly comp:- ent hall, sitting room, dining room, fitted kitchen and four piece bathroom, 3 bedrooms to first floor, rear yard with ample sitting area, gate to rear.
DirectionsFrom Greystone Road, Turn up Tullie Street then take second on the left to Grace Street.LocationLocated to the East of the city centre within walking distance, close to local amenities and with good road and bus links.ServicesMains electric, gas, water and drainage are connected but have not been tested.
Entrance Hall With porch. Understairs cupboard. Radiator.
Dining Room 3.3m x 2.97m
With Karndean flooring. Coving to the ceiling. Picture rail. Radiator. UPVC sealed unit double glazing. Blinds. Meter cupboard.
Sitting Room 4.04m x 3.56m
With TV point. Door off stairs. Feature radiator. UPVC sealed unit double glazing. Glass panelled door to kitchen.
Kitchen 5.3m x 2.18m
With a range of fitted floor and wall units. Worksurfaces with tiled splashbacks. 1 ½ bowl single drainer sink unit with mixer tap. Plumbing for washing machine. Space for a fridge/freezer. Extractor fan. Spotlights. Karndean flooring. UPVC door to rear. Door to bathroom.
With a fitted three piece suite comprising of low suite WC, wash hand basin and panelled bath with mains shower with oversized head over. Tiled walls and floor. Heated towel rail. Spotlights. UPVC sealed unit double glazing.
Stairs Leading from the Sitting Room to the first floor.
Bedroom 3.73m x 2.26m
With coving. Radiator. New UPVC sealed unit double glazing.
Outside With rear yard.
To view this media, please visit the on-line version of this page at www.rightmove.co.uk/property-for-sale/property-56155081.html?premiumA=true
Property reference CAR160261.
13 Grace Street, CA1
9 Grace Street, CA1
1 Grace Street, CA1

value: This website is a UK-based company that runs rightmove.co.uk, the UK's largest online real estate portal and property website. It is listed on the London Stock Exchange and is a constituent of the FTSE 100 Index.


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Monster's Ball 2: Chicago's #1 The Halloween Day Party ft. B 96'S J Nice
AMFM Presents: The Jazz Series at Silent Funny
About Chicago’s Finest Tours
Currently, our tours are ranked 5th best activity (out of 182) in Chicago according to Tripadvisor.com

value: This website is an American event management and ticketing website. The service allows users to browse, create, and promote local events.


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Khloe Kardashian uploads somber self-portrait hours after husband Lamar Odom's DUI arrest | Mail Online
'Smile and no one will notice': Khloe Kardashian uploads somber self-portrait hours after husband Lamar Odom's DUI arrest By
21:01 EST, 30 August 2013
Her husband Lamar Odom was arrested on suspicion of driving under the influence in the early hours of Friday morning.And Khloe Kardashian has alluded to his current struggles and their alleged marriage trouble in a new tweet.The 29-year-old uploaded a somber self-portrait to her Instagram account before tweeting, 'Smile and no one will notice.' 'Smile and no one will notice': Khloe Kardashian uploaded a somber self-portrait to Instagram on Friday hours after husband Lamar Odom's DUI arrest
Troubled times: The image follows weeks of allegations about her husband's drug abuse and the pair's serious marriage issues, culminating in his DUI arrest on Friday, pictured in LA in May The reality star is seen staring at the camera with a penetrating gaze, her lips pouted and her highlighted hair covering half her face.She wears a white hoodie over her head, which, along with the diffused light, lends an angelic feel to the image.Khloe's message to 'smile and no one will notice' is clearly contradictory to the serious tone of her picture. The Keeping Up With The Kardashians star
- who has so far not commented on her alleged marriage troubles - has now posted two self-portraits to Instagram in the past few days.The images follow weeks of troubling allegations about her husband's drug abuse and the pair's serious marriage issues, culminating in his DUI arrest on Friday.The NBA star was pulled over just before 4am for driving too slow at 50mph on the 101 Freeway in the San Fernando Valley.He did not immediately respond to police, passing three exits and driving erratically, TMZ reports.He then allegedly failed numerous field sobriety checks but refused all chemical tests, according to police.He was then taken into custody at Van Nuys police station on $15,000 bail but was released from custody at 8.30am.According to Radar Online Lamar was making his way to his bachelor pad in downtown Los Angeles at the time.Meanwhile, new reports reveal that less than a week before Lamar's DUI arrest, he was involved in a three-car collision on the exact same freeway.
The crash was not reported to authorities, however a journalist for the Los Angeles Times has claimed that his car was rear-ended by another vehicle hit by Lamar's white Mercedes on Saturday.
The LA Times claims the incident took
place around 6pm and the journalist named Adolfo Flores alleges that Odom became reluctant to hand his insurance details over. In
custody: Lamar was released this morning after spending more than three
hours at the Van Nuys Community Police Station after his DUI arrest It is the latest twist in a worrying time for the basketball player, who has allegedly battled an addiction to 'Oxycontin and crack cocaine' for two years.
He has also been accused of cheating with two different women while on the road as a basketball player.Loyal wife Khloe is apparently desperate to 'save' her husband from his alleged drug problems and work through their marital woes.
A source has said: 'She is in love and does not want a divorce.' Both have been pictured with their wedding rings on separate outings this week. Khloe reportedly staged an intervention earlier this month, but the meeting didn't go as planned and Lamar vanished, but was later tracked down to a hotel in Los Angeles. He returned to his L.A. home on Monday after staying away for several days.Khloe
apparently kept the details of her marital problems a secret from most members of family, and insiders say they were 'shocked' to learn of the extent of the issues. (Sources tell Radar Khloe's brother Rob, who lives
with the couple, has been aware of Lamar's alleged drug problems for over a year.) Happier Kardashian: Khloe's sister Kourtney twetd a picture of herself posing with photographer Terry Richardson Share or comment on this article

value: This website is the website of the Daily Mail, a newspaper in the United Kingdom, and of its sister paper The Mail on Sunday. MailOnline is a division of dmg media, which is owned by Daily Mail and General Trust plc.


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Graves Into Gardens CD: Elevation Worship - Christianbook.com
Music× (16)
The worship ministry of Pastor Steven Furtick's Elevation Church showcases the top-notch songcraft and passioniate performances that have made the collective an industry favorite. This nine-song set of modern worship anthems includes "Have My Heart," "There Is A King," "Graves Into Gardens," and more.
Title: Graves Into Gardens CD
Vendor: Elevation Worship Records
I'm the author/artist and I want to review Graves Into Gardens CD.

value:
This website is a Christian catalog and internet retailer.
Christian Book Distributors was started in 1978 by Stephen Hendrickson, 19 years old and a sophomore at Central Bible College in Springfield, Missouri, out of his parents’ home in Lynn, Massachusetts.


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From 'Kick' to 'Happy New Year': Why B-Town producers are in love with English titles | Daily Mail Online
From 'Kick' to 'Happy New Year': Why B-Town producers are in love with English titles
Published: 20:32 EDT, 31 August 2014 | Updated: 20:32 EDT, 31 August 2014
Blame it on Bollywood's trademark herd mentality or perhaps plain business logic, but biggies lined up over the next few months reveal the slant towards English titles is growing.
Almost every A-list star is working on or has recently finished a film with an English name.
Following a trend is synonymous with our film-makers, and the rise in films with English names could just be a reflection of that copycat mindset. The fad gained ground post-globalisation in the late '90s with the advent of the multiplex culture, which has only become commonplace now.
The multiplex culture could be a reason why industry moneybags are seeing moolah sense in the trend.
In a scenario where the single screen is dying out and Bollywood is driving almost 50 per cent of its trade from big city multiplexes lately, the young urban cinegoers are fast emerging as the average big producer's target audience.
Salman Khan just had a box-office hit with Kick this Eid, and Akshay Kumar, after Holiday and Entertainment, gets going with Singh Is Bling.
Shah Rukh Khan and Deepika Padukone star in Happy New Year this Diwali, and Deepika teams up with Naseeruddin Shah and Arjun Kapoor in Hinglish crossover flick Finding Fanny before that.
Hrithik Roshan and Katrina Kaif co-star once again, in Bang Bang this time, while Katrina joins Saif Ali Khan in Kabir Khan's Phantom.
Ranbir Kapoor's ambitious film with Anurag Kashyap is called Bombay Velvet, while Creature-featuring Bipasha Basu - and Welcome Back, sequel to the 2007 hit comedy, are other biggies flaunting English titles.
Not surprisingly, almost everything including the casting credits and posters of our Hindi films have eternally been in English. The title trick is in just in sync.


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Malvern Vacations 2018: Package & Save up to $603 | Expedia
Malvern Vacation Deals
No matter if you are looking for brief break or planning a vacation, Malvern is a terrific destination.
Booking both your flights and accommodation is really quite easy with Expedia. Few things are easier than pairing your lodging and flight packages for additional savings. During your stay in Malvern, spoil yourself with your extra cash.
Save up to $603 when you book your Malvern package deal.
Take advantage of the super savings at Expedia and indulge in the vacation you've been dreaming of. You'll be glad you did.
It sits 3 miles west of Guarlford and about 100 miles northwest of London, the national capital.
There's nothing like spending a day out among nature to recharge a travel-weary soul. When you get the urge to escape the hustle and bustle, make your way over to Herefordshire Beacon.
For a taste of something more cultural, head to the Malvern Museum or the Morgan Motor Company. Ask the staff about available tours or one-off events. If you luck out and there isn't anything on, simply enjoy a stroll through the contemplative halls.
Step back in time at Great Malvern Priory, one of the most popular snapshots of history in this area.
One of the most visited performing arts houses in town is the Malvern Theatres. After the show, head off for supper at one of the nearby restaurants or bars and enjoy the region's culinary specialties.
Since there is only a small number of Expedia places to stay in Malvern itself, you should book ahead if you are intent on staying a while.
In Malvern's more desirable top-end accommodation range you'll find The Malvern, Grovewood Road, and The Abbey Great Malvern, Abbey Road. Alternatively, if you're trying not to break the bank, you might want to consider staying at the BW Premier Collection Bank House Hotel, Spa & Golf, at A4103, or the Holdfast Cottage Hotel, at Marlbank Road.
See all 338 Hotels in Malvern
This family-friendly Malvern hotel is located in a shopping district, steps from Malvern Museum, Great Malvern Priory, and Malvern Theatres. Worcester Racecourse is 8.5 mi (13.7 km) away.
Situated in Malvern, this inn is within 2 mi (3 km) of Malvern Museum, Great Malvern Priory, and Malvern Theatres. Worcester Racecourse is 9.9 mi (15.9 km) away.
Located in the heart of Malvern, this spa hotel is within 3 mi (5 km) of Malvern Theatres, Great Malvern Priory, and Malvern Museum. Worcester Racecourse is 6.8 mi (10.9 km) away.
Located in Little Malvern, this hotel is within 3 mi (5 km) of Great Malvern Priory, Malvern Museum, and Malvern Theatres. Worcester Racecourse is 10.6 mi (17 km) away.
Situated in Cradley, this bed & breakfast is within 6 mi (10 km) of Malvern Museum, Malvern Theatres, and Great Malvern Priory. Worcester Racecourse and Kingfisher Trout Lake are also within 12 mi (20 km).
Situated in a regional park, this bed & breakfast is within 1 mi (2 km) of Malvern Theatres, Great Malvern Priory, and Malvern Museum. Worcester Racecourse is 9 mi (14.5 km) away.
Destinations in Malvern
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Amazon.com: Hume on Motivation and Virtue: New Essays (Philosophers in Depth) (9780230205277): Charles Pigden: Books
ISBN-13: 978-0230205277
ISBN-10: 0230205275
17 New from $87.79
14 Used from $73.10
Amazon Best Sellers Rank: #3,908,254 in Books (See Top 100 in Books)

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text:
The legal services program--accomplishments of and problems faced by its grantees : report to the Congress [on the] Office of Economic Opportunity (Kniha, 1973) [WorldCat.org]
Název: The legal services program--accomplishments of and problems faced by its grantees : report to the Congress [on the] Office of Economic Opportunity
Vydavatel: Washington, DC : U.S. General Accounting Office, 1973.
Přidat štítky pro "The legal services program--accomplishments of and problems faced by its grantees : report to the Congress [on the] Office of Economic Opportunity".

value: This website is a union catalog that itemizes the collections of 15,637 libraries in 107 countries that participate in the OCLC global cooperative. It is operated by OCLC, Inc.


text:
Double Bathroom Vanities - Traditional - los angeles - by Vanities for Bathrooms
Vanities for BathroomsKitchen & Bath Designers	Email	Save to Ideabook56Ask a QuestionPrint	Double Bathroom Vanities
If your bathroom needs two sinks and extra storage space, one fitting that could advantage your needs is a double bathroom vanity. Usually, a bathroom sink vanity cabinet has a bowl sink maintained by a wooden bath cabinet and a stone or glass countertop, if additional than three folks live in your home, a double sink bathroom vanities are often more reasonable for use and time used up in the bath. With modern and traditional wood styles on the marketplace, most double bathroom vanities are designed in traditional styles, with two ceramic sinks, an extended marble countertop and wooden bathroom cabinets. Storing space is significant for all sorts of double sink vanities give you two options. For one, the big room under two basins is storage for all items, including cleaning goods, any toiletries, and bathroom space can be shared by two persons using the vanity in a time. URL
http://www.listvanities.com/double-sink-vanities.html
jrstevens1002 added this to bathroom ideasOctober 3, 2013Vanitytristlynn added this to bathroomsJuly 15, 2013vanity sinks in dark brownkimberlyconrad added this to kimberlyconrad's ideasJuly 14, 2013love idea but middle looks like after thoughtmkmtn added this to mkmtn's ideasFebruary 23, 2013Diff level sinktopjodigallagher added this to jodigallagher's ideasFebruary 13, 2013Wood	Browse over 5 million home design photos on houzz	Photos in Double Bathroom Vanities
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a bathroom sink cabinet · bathroom sink vanity cabinet · bathroom sinks vanity · bathroom vanity double sink · bathroom vanity designs · hardware · Ontario Custom Bath Designers	United StatesUnited KingdomAustraliaDeutschlandFrance COMPANY

value: This website is an American website, online community and software for architecture; interior design and decorating; landscape design and home improvement. It was founded in 2009 and is based in Palo Alto, California.


text:
Page Springs Living Cornville, AZ 86325 - YP.comFind People•Advertise With UsBrowseAttorneysHome ServicesMedical & DentalRestaurantsAutomotiveInsuranceBeauty & SpaPetsTop SubcategoriesDivorce AttorneysFamily Law AttorneysReal Estate AttorneysCriminal Law AttorneysChild Custody AttorneysPeople also searched for...LouisTop SubcategoriesPlumbersGeneral ContractorsRoofing ContractorsLocksmithAir Conditioning Service RepairPeople also searched for...Carpet CleanersArizona ConstructionGuenther ElectricRoofing RepairTop SubcategoriesDentistsDoctorsHospitalsMedical ClinicsEye DoctorPeople also searched for...Urgent CareCvsTop SubcategoriesChinese RestaurantsMexican RestaurantsFast Food RestaurantsItalian RestaurantsSeafood RestaurantsPeople also searched for...Pizza DeliveryPizzaRestaurantCreole Cajun RestaurantsHome Cooking RestaurantsChinese Food DeliveryDominos PizzaTop SubcategoriesAuto Repair ServiceAuto PartsAuto Salvage YardsAuto Glass RepairAuto DetailingPeople also searched for...TowingThe ShopJunkyardTop SubcategoriesAuto InsuranceHomeowners InsuranceHealth InsuranceDental InsuranceInsurance AdjustersPeople also searched for...Top SubcategoriesNail SalonsHair SalonMassage TherapistsTanning SalonsDay SpasPeople also searched for...NunnBeauty SalonsIsland ReflexologyClare Marie Massage TherapyPerfumaniaSalon WestTop SubcategoriesPet StoresPet GroomingPet Boarding KennelsMobile Pet GroomingVeterinariansPeople also searched for...Veterinary ClinicsCornville Pet ClinicPet FoodPet StorePeople also searched for...Rv ParksHouses For RentTaxi ServiceTobaccoWineriesInternet Service Providers IspHead ShopCampgroundsPizza DeliveryCampgrounds Recreational Vehicle ParksBeekeepersHoliday Inn ExpressHorse BoardingTowingBreakfast Brunch Lunch RestaurantsAre you a local business owner?Advertise with YPor call 888-367-2194Start your search by typing in the business name below.
Where?My current locationSearchSign In•JoinWrite a ReviewHomeAssisted Living Facilities near Cornville, AZPage Springs LivingIn mybook® : Health Collection (edit)Added to your health collection.Removed from mybook!We took this business out of your health collection.Page Springs LivingWrite a ReviewAdd a PhotoView all 2(1 Review)995 S Page Springs Rd, Cornville, AZ 86325(928) 649-0588Add to mybookThis listing has been added to mybook.This listing has been removed from mybook.ShareFACEBOOKGOOGLE +TWITTERemailsend to phoneSend to PhonePage Springs Living995 S Page Springs Rd, Cornville, AZ 86325(928) 649-0588Send this business listing as a text message to a mobile phone.I agree to the Terms and ConditionsCancelSendYour text message was sent.To opt out at anytime, send the word STOP to YP411.To get a help message, send the word HELP to YP411.There was an error sending your text.Please try again.Terms: The recipient of this text message may incur charges depending on their wireless carrier. Not all carriers are currently supported.E-MailPage Springs Living995 S Page Springs Rd, Cornville, AZ 86325(928) 649-0588Send this business details to yourself or up to 5 friends.Up to 5 email addresses, separate addresses with a commaSend Yourself a CopyCancelSendVisit WebsiteSuggest an EditIs this your business? Customize this page.Claim this businessBusiness DetailsCouponsGallery (2)Reviews (1)Senior Assisted LivingCaring.com is your leading assistedliving advisor for senior care.www.call-caring.comA Place for MomThe Best Communities Near YouGet Pricing, Feedback and Guidancewww.aplaceformom.comFight Alzheimer'sSpeak to an AdvisorSee ReviewsGet Community PricingHoursRegular Hours24 HoursLocation1/4 mile north of the Cornville Rd.Other Linkhttp://www.pagespringsliving.comCategoryAssisted Living Facilities Other InformationParking: Lot, FreeWheelchair Accessible: YesCouponsNo deals available. Claim this business to add deals.Claim this businessGalleryView all (2)Photos (2)ReviewsHi there!Rate this business!5First-class4Better than most3About what I expected2Not the worst...1DisappointingClick to RateShare ReviewLike this review? Share it on your social network to get the word out!ShareTweetShareWant to just link to it instead? Copy URL above and paste away!dione.cozens11/11/2012OverallThis is the best assisted livi...This is the best assisted living home I've seen! It has a warm, welcoming feeling the moment you walk in the front door. The animals are a plus. The views are spectacular! Just visit their website and see if you agree. I would definitely recommend Page Springs Living to my mom!Helpful(0)ShareFlagMap & DirectionsPeople Also ViewedAustin House195 S Willard St, Cottonwood, AZVerde Valley Manor Retirement3400 E Godard Rd, Cottonwood, AZResCare HomeCare - Cottonwood709 E Mingus Ave Suite 201, Cottonwood, AZCountry Care Assisted Living Homes3940 E Cassie Ln, Cottonwood, AZMingus Terrace Assisted Living Home1236 S Pioneer Dr, Cottonwood, AZPaid AdvertisementAboutAbout UsSite FeedbackContact UsAdvertise with UsCareers - We're HiringCorporate BlogEngineering BlogLegal

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text:
Patent US4922686 - Vacuum packaging method - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsA vacuum packaging process and apparatus employ the novel step of deliberately at least partially re-pressurizing the exterior of a packaging receptacle after commencement of the evacuation of the exterior and interior of the receptacle in a chamber. Preferably two separate gas pressure restoration phases...http://www.google.com/patents/US4922686?utm_source=gb-gplus-sharePatent US4922686 - Vacuum packaging methodAdvanced Patent SearchPublication numberUS4922686 APublication typeGrantApplication numberUS 06/747,400Publication dateMay 8, 1990Filing dateJun 21, 1985Priority dateOct 16, 1981Fee statusLapsedAlso published asDE3268294D1, EP0077458A1, EP0077458B1Publication number06747400, 747400, US 4922686 A, US 4922686A, US-A-4922686, US4922686 A, US4922686AInventorsPietro SegotaOriginal AssigneeW. R. Grace & Co.Export CitationBiBTeX, EndNote, RefManPatent Citations (16), Referenced by (15), Classifications (5), Legal Events (7) External Links: USPTO, USPTO Assignment, EspacenetVacuum packaging methodUS 4922686 AAbstract A vacuum packaging process and apparatus employ the novel step of deliberately at least partially re-pressurizing the exterior of a packaging receptacle after commencement of the evacuation of the exterior and interior of the receptacle in a chamber. Preferably two separate gas pressure restoration phases are employed, separated by a resumption of the gas extraction, and the receptacle is closed during the second of these gas pressure restoration phases.
I claim: 1. In the process of vacuum packaging articles in flexible receptacles by placing the filled, unsealed receptacle in a vacuum chamber, lowering the pressure below atmospheric thereby ballooning the receptacle away from the article, and, subsequently, raising the pressure in the chamber to collapse the receptacle onto the article and sealing the receptacle, the improvement which comprises after the pressure has been lowered and raised in a first cycle and before the receptacle is sealed the additional steps of lowering and raising the pressure through at least one additional cycle of lowered and raised pressure to cause the receptacle to alternately balloon away from and collapse upon the article thereby pumping residual air from within the receptacle and, thereafter, sealing the receptacle.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS3491504 *Oct 2, 1967Jan 27, 1970Young William EMethod and apparatus for vacuum skin packagingUS3714754 *Dec 14, 1970Feb 6, 1973Grace W R & CoVacuumizing systemUS3832824 *Jun 29, 1973Sep 3, 1974Grace W R & CoApparatus and method for evacuating packagesUS3851437 *Dec 10, 1973Dec 3, 1974Grace W R & CoReceptacle evacuation apparatus and methodUS3895475 *Apr 18, 1974Jul 22, 1975Young William EMethod and apparatus for vacuum skin packaging of soft meat and the likeUS3965646 *Feb 26, 1975Jun 29, 1976W. R. Grace & Co.Adjustable sealing deviceUS4132048 *Mar 28, 1977Jan 2, 1979Day Timothy TVacuum packaging bulk commoditiesUS4164111 *Nov 17, 1977Aug 14, 1979Pietro Di BernardoVacuum-packing method and apparatusUS4182095 *May 16, 1978Jan 8, 1980Day Timothy TPackaging bulk commoditiesUS4457122 *Aug 21, 1981Jul 3, 1984W. R. Grace & Co., Cryovac Div.Vacuum packaging goods in heat shrinkable plastic bags using flexible diaphragmsDE2161608A1 *Dec 11, 1971Jun 29, 1972 Title not availableDE2247452A1 *Sep 27, 1972Apr 4, 1974Hagedorn Kg Technopack EwaldVerfahren und vorrichtung zum evakuieren und verschliessen eines verpackungsbeutelsDE2409716A1 *Mar 1, 1974Sep 11, 1975Kodjo Dipl Ing KudiaborImplosionskammerverfahren und vorrichtung zum evakuieren von verpackungsfolienbeutelnDE2750934A1 *Nov 15, 1977May 24, 1978Bernardo P DiVerfahren und vorrichtung zum vakuumverpacken von warenGB2078658A * Title not availableNL173097C * Title not available* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS5528880 *May 14, 1993Jun 25, 1996Inauen Maschinen AgProcess for the packaging of product under vacuum and vacuum-packaging machineUS5655357 *May 2, 1995Aug 12, 1997Tilia International, Inc.Exhaust flow rate vacuum sensorUS6321513 *Sep 26, 1997Nov 27, 2001Pi-Patente Gesellschaft Mit Beschr�nkter Haftung (Gmbh) Entwicklung Und VerwertungMethod for packing articles in an elastic packing material and device to carry out said methodUS6889487 *Mar 12, 2004May 10, 2005Ibaraki Seiki Machinery Co., Ltd.Apparatus for continuously forming vacuum packaged bodyUS7204067Feb 26, 2004Apr 17, 2007Sunbeam Products, Inc.Vacuum packaging appliance with removable troughUS7464522Jun 5, 2006Dec 16, 2008Sunbeam Products, Inc.Vacuum packaging applianceUS7478516Mar 20, 2006Jan 20, 2009Sunbeam Products, Inc.Vacuum packaging applianceUS7484346Feb 15, 2007Feb 3, 2009Sunbeam Products, Inc.Vacuum packaging appliance with removable troughUS7726104Jun 21, 2007Jun 1, 2010Cp Packaging, Inc.Vacuum packaging system with end cutterUS8308881 *Nov 1, 2011Nov 13, 2012Rovema GmbhUltrasonic hot sealing method with regulation of sealing pressureUS8349107 *Nov 1, 2011Jan 8, 2013Rovema GmbhMethod for energy-efficient sealing of tubular bagsUS20120125521 *Nov 1, 2011May 24, 2012Rovema GmbhUltrasonic hot sealing method with regulation of sealing pressureUS20120167531 *Nov 1, 2011Jul 5, 2012Rovema GmbhMethod for energy-efficient sealing of tubular bagsDE102010055438A1 *Dec 21, 2010Jun 21, 2012Multivac Sepp Haggenm�ller Gmbh & Co. KgVerpackungsmaschine und Verfahren zum Erzeugen einer VakuumverpackungEP1564147A1 *Feb 13, 2004Aug 17, 2005Cryovac, Inc.Vacuum packaging apparatus and process* Cited by examinerClassifications U.S. Classification53/434, 53/512International ClassificationB65B31/02Cooperative ClassificationB65B31/024European ClassificationB65B31/02ELegal EventsDateCodeEventDescriptionJul 2, 2002FPExpired due to failure to pay maintenance feeEffective date: 20020508May 8, 2002LAPSLapse for failure to pay maintenance feesNov 27, 2001REMIMaintenance fee reminder mailedAug 17, 1998ASAssignmentOwner name: CRYOVAC, INC., SOUTH CAROLINAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:W.R. GRACE & CO.-CONN.;REEL/FRAME:009405/0001Effective date: 19980814Sep 22, 1997FPAYFee paymentYear of fee payment: 8Oct 25, 1993FPAYFee paymentYear of fee payment: 4Sep 5, 1989ASAssignmentOwner name: W.R. GRACE & CO.-CONN, A CORP. OF CTFree format text: MERGER;ASSIGNORS:W.R. GRACE & CO.;GRACE MERGER CORPORATION;REEL/FRAME:005169/0141Effective date: 19880525RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

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text:
Nucleotide (Weighted) Links for PubMed (Select 15564505) - Nucleotide - NCBI
SpeciesClearViruses(5)Customize ...Molecule typesCleargenomic DNA/RNA(5)mRNA(1)Customize ...Source databasesClearINSDC (GenBank)(10)RefSeq(1)Customize ...Sequence lengthclear
Select item 10319618971.Dengue virus 2 strain 16681, complete genome10,723 bp linear RNA Accession: KU725663.1 GI: 1031961897 GenBankFASTAGraphicsSelect item 7567658022.Synthetic construct strain NS5hmin polyprotein gene, complete cds10,723 bp linear other-genetic Accession: KP161067.1 GI: 756765802 GenBankFASTAGraphicsSelect item 7567658003.Synthetic construct strain NS3hmin polyprotein gene, complete cds10,723 bp linear other-genetic Accession: KP161066.1 GI: 756765800 GenBankFASTAGraphicsSelect item 7567657984.Synthetic construct strain Ehmin polyprotein gene, complete cds10,723 bp linear other-genetic Accession: KP161065.1 GI: 756765798 GenBankFASTAGraphicsSelect item 7567657965.Synthetic construct strain D2syn polyprotein gene, complete cds10,723 bp linear other-genetic Accession: KP161064.1 GI: 756765796 GenBankFASTAGraphicsSelect item 3905385146.Dengue virus 2 strain 16681 capsid gene, partial cds342 bp linear RNA Accession: JQ846016.1 GI: 390538514 GenBankFASTAGraphicsSelect item 3275152707.Sequence 13 from Patent EP227801210,723 bp linear other Accession: JA012871.1 GI: 327515270 GenBankFASTAGraphicsSelect item 1589769838.Dengue virus 2, complete genome10,723 bp linear RNA Accession: NC_001474.2 GI: 158976983 GenBankFASTAGraphicsSelect item 155544739.Sequence 13 from Patent WO016084710,723 bp linear DNA Accession: AX224221.1 GI: 15554473 GenBankFASTAGraphicsSelect item 215525710.Dengue virus type 2 (strain 16681) polyprotein mRNA, complete cds10,723 bp linear mRNA Accession: U87411.1 GI: 2155257 GenBankFASTAGraphicsSelect item 32345111.Dengue virus type 2 non-structural protein 1 (NS1) gene, partial cds1,056 bp linear RNA Accession: M58486.1 GI: 323451 GenBankFASTAGraphics
db=nuccore|term=|query=1|qty=3|blobid=NCID_1_221671566_130.14.22.215_9001_1472091016_202334297_0MetA0_S_MegaStore_F_1|ismultiple=false|min_list=5|max_list=20|def_tree=20|def_list=|def_view=|url=/Taxonomy/backend/subset.cgi?|trace_url=/stat?
Turn Off Turn On Nucleotide (Weighted) Links for PubMed (Select 15564505) (11)

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Janey G. - Make new friends in Stockholm (Stockholm)
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Badminton, Volleyball, Skating, Skiing, Tennis
I would love to organizing after I know more about the city.
Hey Guys, I'm Janey from China who's been here for one month in Stockholm. I'd like to meet more friends here and I like the feeling of refreshing myself after sports. Hope we can have a good time here.
2,872 Fika enthusiasts

value: This website is a service used to organize online groups that host in-person and virtual events for people with similar interests. It was founded in 2002 by Chairman Scott Heiferman and four co-founders.


text:
Aayush Tripathi_Senior Security Con...
by Aayush Tripathi |...
ActiveInsight offers real-time, value-based detection and reaction to complex event patterns and online behavior. In this presentation we review a use-case from the logistics industry utilizing Activeinsight for improved customer service, account management and sales.see http://www.activeinsight.net for more information.
Case Study: Online CRM and BI
ActiveInsight Delivers Real-time Behavioral
Detection that Improves Customer
Relationship Management and Business
A leading express & logistics company has deployed ActiveInsight
to detect and react to customer behavior on their self-service
portal in order to:
Offer superior business intelligence
Logistics firms usually offer similar services and compete by
providing better service and customer management
Reacting to customer according to his/her needs is critical
As the online channel gains momentum as the premier channel for
service and sales, the following abilities are crucial:
Detect relevant customer behavior in real-time
Correlate it with existing customer data and
Online behavior data is also required to improve user profiling and
segmentation using BI and CRM applications.
Most organizations are happy to move more and more customer
interactions to the web, offering convenience and cutting costs
The online channel is quite static as relevant customer behavior is
not leveraged and the human touch is lost.
Most organizations have CRM, BI and other similar applications BUT
These apps do not collect online behavior & cannot react in real-time
Relying on web-server logs is futile as they hold irrelevant technical
information, are not user-centric and cannot be utilized to react in
Trying to change application code will result in maintenance and
performance issues as well as long deployment cycles
Organizations can leverage online customer behavior to
Minimize customer desertion
Provide segmented service
Detect and react to up-sell and cross-sell opportunities
Detecting relevant events and behavior in real-time, out of millions of
events, without harming application performance and availability
Reacting to relevant events by feeding various backend applications
(CRM, BI, Security, etc.) and/or interacting directly with the user
Providing a simple, flexible and embeddable solution that can be
deployed with existing infrastructure and applications
De-coupling runtime processing for flexibility and scalability
ActiveInsight’s event processing engine has been deployed to detect
and react to online user behavior in the web self-service application.
Deployed non-intrusively along-side the application, ActiveInsight is
Detect specific customer behavior
React to the online customer
Send focused, actionable business events to the organizations BI and
The Solution – Cont.
All of the web interactions are monitored and filtered, leaving only
the relevant ones to be reacted upon.
Relevant and valuable behavior results in dynamic user responses
including responses that:
Offer online assistance when relevant (for VIP customers) or
Offer appropriate products for those customers that demonstrate
In some cases, the relevant reaction is based both on the actual online
behavior and existing data regarding the specific customer or active
marketing campaigns. This was achieved by storing back-end data in-
memory and using ActiveInsight's context manager and the real-time
aggregation and correlation capabilities.
Relevant behavioral data is formatted and sent to the appropriate
back-end application: CRM or BI.
Business events are formatted per application and may include
different data items.
The data sent to the CRM application serves the customer service
center by documenting relevant online customer interactions,
potential service issues and customer interests.
The data that is fed to the BI helps in more accurate customer profiling
ACTIVE INSIGHT BI
Application Detect React Fraud
After deploying ActiveInsight the organization has enjoyed several
benefits on both the short and medium term:
Improved Customer satisfaction - As the self-service portal became
adaptive to customer's needs including initiating human interaction
Lowered operational costs - As more customers use the portal
Better customer segmentation and account management - Utilizing
the addition of behavioral data to the BI system helped marketing and
sales efforts and improved the bottom line.
Lead generation - Correlated responses resulted in higher numbers of
leads for cross-sells generated in the self-service site.
ActiveInsight’s Unique Value Proposition
Embeddable, Real-time data stream processing
Flexible and dynamic pattern definition/detection
SpringSource development platform interoperability
Real-time, pattern-based logic invocation
Business driven behavior detection
User-centric actionable events
Real-time, value-based event feeds & user interactions
Support for extreme transaction rates
“With ActiveInsight organizations can identify up-sell and cross-sell opportunities, react to potential customer
churn in time to prevent it, improve online self-service to customers and detect potential fraudulent activity in
real-time “
Online Sales, Use behavioral targeting to detect
Marketing and up-sell/ cross-sell opportunities.
Campaign Mgmt Detect customer touch-points for
real-time proposal delivery.
CRM, Customer Detect customer experience
Experience and problems and offer VIP assistance.
React to potential customer churn
Security Provide application level visibility.
Offload application logging and
Event Mgmt (SIEM)
provide real-time formatted events
to SIEM or compliance applications.
Fraud Detection Detect and feed application events
and Adaptive in real-time.
Use behavioral targeting to detect
fraudulent activity and patterns.
Extreme Offer real-time event and pattern
Transactions processing in extreme transaction
Complex Event rates.Provide Low-latency event
Processing (CEP) correlation and service initiation.
http://www.activeinsight.net
info@activeinsight.net
Aayush Tripathi_Senior Security Consultant
Aayush Tripathi | CEH v 7, AESA
Growth hacking 2014 - Account Based Marketing

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