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Top Hotels in Kinki from $41 (FREE cancellation on select hotels) | Expedia
Kinki Travel GuideFlights to KinkiThings to do in KinkiCar Rentals in KinkiKinki Vacation Packages
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Find the best Kinki areas and neighborhoods for the activities you enjoy most. Learn more about Kinki
Ancient temples blend with modern architectural treasures while markets, museums, dining and shopping streets showcase thousands of years of Japanese traditions.
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Kinki hotels and places to stay
109.75 mi from city center
46.19 mi from city center
47.02 mi from city center
24.23 mi from city center
24.29 mi from city center
45.39 mi from city center
45.23 mi from city center
Visiting Kinki
History buffs will enjoy exploring Kinki, and visitors give high marks for the temples, shopping, and sightseeing tours. This culturally-rich city also attracts tourists with its restaurants and gardens. Top sights in the city include Kobe Tower, Port of Kobe, and Arima Hot Springs.
There are 6495 hotels and other accommodations in Kinki
The closest major airport is in Kobe (UKB), 8.5 mi (13.6 km) from the city center
The next closest is in Osaka (KIX-Kansai Intl.), 16.3 mi (26.3 km) away
Sightseeing and Staying in Kinki
Cultural venues in the city include Osaka Maritime Museum, Osaka Science Museum, and Open Air Museum of Old Farmhouses. Attractions like Kidzania Koshien Theme Park, Osaka Aquarium Kaiyukan, and Legoland Discovery Center are fun for kids of all ages. Its temples and historic sites are notable and landmarks include Kobe Tower, Umeda Sky Building, and Tsutenkaku Tower.
In Kinki, you'll be able to select from 6495 hotels and other lodging options so you'll have ample places to choose from for your holiday getaway. Here you'll find top ranked ones based on Expedia user reviews:
TSUKIJI HOSTEL Wakayama - Amenities at this 2.5-star guesthouse include free WiFi and a free area shuttle. It's a favorite with Expedia travelers for its location and clean, comfortable rooms.
Kamuro-an - Our customers like the family-friendly amenities and room size at this ryokan. Located in Sannenzaka Ninenzaka, this 3-star ryokan accommodation features free WiFi and an LCD TV.
NEST AT NISHIKI, KYOTO - This 3-star hotel in Central Kyoto features free WiFi and a 24-hour front desk. Expedia customers like its overall value and central location.
Other favorite sights in Kinki include Port of Kobe, Arima Hot Springs, and Hanshin Koshien Stadium.
Getting Around Kinki
With so many transportation options, seeing Kinki is a breeze. Take advantage of metro transit at Myodani Station, Myohoji Station, and Sogoundokoen Station. If you want to see more of the area, ride aboard a train from Kobe Shioya Station, Kobe Sanyoshioya Station, or Kobe Takino-chaya Station.
What's the best place for a stay in Kinki?
Hotel La Suite Kobe Harborland is a favorite with Expedia customers. This 4.5-star hotel offers 2 restaurants and free WiFi. It is located a short 6-minute walk from Kobe Tower. Reviews from our site also recommend Noborioji Hotel Nara and kyoto kamanza hotel as top choices for your visit.
If I need to cancel my hotel reservation in Kinki, will I receive a refund?
Yes! Most hotel reservations are refundable provided that you cancel before the hotel’s cancellation deadline, which often is within 24-48 hours of your check-in date. If you have a reservation that’s non-refundable, you might be able to cancel it and be given a refund within a 24-hour period of booking. Add dates, click “Search”, then filter by “free cancellation” to review the best deals available in Kinki.
Where can I learn more about changing or cancelling my trip to Kinki?
For additional details about rescheduling or cancelling your trip to Kinki, go to https://www.expedia.com/service/.
What are some accommodations with pools in Kinki?
RIHGA Royal Hotel Osaka: 4.5-star hotel, 3-minute walk from Osaka International Convention Center. Features 20 restaurants, an indoor pool, and 3 bars. Crowne Plaza ANA Kobe and Nanki-Shirahama Marriott Hotel are a couple of other choices that feature an onsite pool.
What's it like staying in Kinki?
History buffs will enjoy exploring Kinki, and visitors give high marks for the temples, shopping, and sightseeing tours. This culturally rich city also attracts tourists with its restaurants and gardens. Top sights in the city include Arima Hot Springs, Universal Studios Japan™, and Kyocera Dome Osaka. In Kinki, there are 9754 hotels and other accommodations to choose from.
What should I do while I'm visiting Kinki?
Cultural venues include Kobe Anpanman Children’s Museum & Mall, Osaka Science Museum, and Orix Theater. Attractions like Kidzania Koshien Theme Park, Osaka Aquarium Kaiyukan, and Universal Studios Japan™ are fun for kids of all ages. The temples and historic sites are notable and landmarks include Kobe Tower, Tsutenkaku Tower, and Osaka Castle.
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Mondi Lodge - 2017 Prices & Reviews (Curacao/Dorp Sint Michiel) - TripAdvisor
Mondi Lodge, Curacao/Dorp Sint Michiel
Caribbean Curacao Dorp Sint Michiel Dorp Sint Michiel Specialty Lodging Dorp Sint Michiel Lodges
We can't find prices for this accommodation From {rate_price} {rate_periodicity} Return to Map Mondi Lodge
#1 of 3 Specialty Lodging in Dorp Sint Michiel Klein Sint Michiel 1, Dorp Sint Michiel L7120, CuracaoKlein Sint Michiel 1, Dorp Sint Michiel L7120, Curacao
Savings alert: Best prices for your stay 07/09/2017 07/10/20171 room 1 room 2 adults 2 adults 0 children 0 children Ages of Children: change Please provide ages Child 1 Age Age Update Search No availability for your dates from these sites Orbitz.comHotels.comTravelocityExpedia.comHotwire.comCheapTicketsView all 10 dealsOrbitz.comHotels.comTravelocityExpedia.comHotwire.comCheapTicketsPricelineBooking.comHOTEL.INFOHRS.comPrices above are provided by partners for one room, with variable occupancy rules as provided by the property, and do not include all taxes and fees. Please see our partners for full details. All photos (145) Full view Certificate of Excellence What is Certificate of Excellence? TripAdvisor gives a Certificate of Excellence to accommodations, attractions and restaurants that consistently earn great reviews from travelers. Traveler (76)Room & Suite (44)Dining (11)
OverviewRoomsReviewsAboutPhotosNearbyQ&ARoom TipsMore Similar hotelsSee all 112 hotels in CuracaoBaoase Luxury Resort527 reviews#1 of 32 hotels in Willemstad Van der Valk Kontiki Beach Resort1,087 reviews#3 of 32 hotels in Willemstad Scuba Lodge & Suites621 reviews#2 of 32 hotels in Willemstad Santa Barbara Beach & Golf Resort, Curacao2,209 reviews#1 of 1 hotels in Nieuwpoort Overview 5.0 136 reviewsExcellent96%Very good4%Average0%Poor0%Terrible0%Travelers talk about“outdoor kitchen” (4 reviews)“every morning” (9 reviews)“mosquito net” (4 reviews)Free WifiFree ParkingBreakfast includedAir ConditioningPoolNon-Smoking RoomsAirport TransportationFamily RoomsKitchenetteConciergeStar rating provided by Expedia.2.5 Star HotelAll hotel details
Similar hotelsSee all 112 hotels in CuracaoBaoase Luxury Resort527 reviews#1 of 32 hotels in Willemstad Van der Valk Kontiki Beach Resort1,087 reviews#3 of 32 hotels in Willemstad Scuba Lodge & Suites621 reviews#2 of 32 hotels in Willemstad Santa Barbara Beach & Golf Resort, Curacao2,209 reviews#1 of 1 hotels in Nieuwpoort Rooms Jul 9Jul 10|Age1 room, 2 adults, 0 children1 room 1 room 2 adults 2 adults 0 children 0 children Ages of Children Age Age Update Search Update Standard Room Getting you more information on this room Free Cancellation Best Price per night Select Show available rooms for Mondi Lodge Sorry, this partner no longer has rooms available on TripAdvisor. Please visit one of our 0 partner sites to see rooms from .We're sorry, there are no rooms available on TripAdvisor. 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Traveler rating Excellent130Very good6Average0Poor0Terrible0Traveler typeFamiliesCouplesSoloBusinessFriendsTime of year Mar-MayJun-AugSep-NovDec-FebLanguage All languages English (75)Dutch (42)German (16)More languages Language English (75)Dutch (42)German (16)French (1)Italian (1)Portuguese (1)Spanish (1)
Mandy B6Reviewed May 15, 2017 Curacao EcolodgeThis was the perfect property for us, a group of friends who prefer the ecolodge kind of feel. The rooms were great, air conditioning and wifi worked well. The outdoor shower is beautiful. Amazing outdoor kitchen and excellent breakfast. The hosts were also unbelievable helpful....MoreThank Mandy B Response from DdeHaseth, Owner at Mondi LodgeResponded May 17, 2017Dear Mandy, Angela and Pritta,
Thank you for the beautiful review! Of course we did everything to help you out when we got your phone call. Your safety is our main concern! It was a small effort to move your stuff to a different room...More
OlgaAndOlafMainz, Germany1Reviewed April 6, 2017 a home away from homeWe were welcome by one of few lovely pets who live at mondi lodge - and oh my god - we love animals!
The owner and her staff brought us two unforgetable weeks at Curacao. The complete location is furnished with a lot attention on...MoreReview collected in partnership with this hotel This business uses tools provided by TripAdvisor (or one of its official Review Collection Partners) to encourage and collect guest reviews, including this one.Thank OlgaAndOlaf Response from DdeHaseth, Owner at Mondi LodgeResponded April 21, 2017Dear Olaf and Olga,
This review really puts a big smile on my face!! :-D
You experienced exactly what we try to transfer to our guests, which is feeling at home, close to nature, in company of animals, while enjoying eco-creative details and a great...More
campbelltasha1Reviewed April 4, 2017 via mobile Honeymooners but not reallyWe were so excited about staying here. All our expectations were met and then some.
From the moment we arrived we felt relaxed. The luxurious little bungalows are so perfect, I could live there.
The hostess Danita, is extremely welcoming and obviously loves this beautiful...MoreThank campbelltasha Response from DdeHaseth, Owner at Mondi LodgeResponded April 21, 2017Dear Tasha and Chris,
Thanks for the amazing review!! It was an honor having you over. And receiving all those exciting messages upfront was just the cherry on top ;-) It made us excited to have you here!
clabier714Hamburg, Germany1Reviewed March 28, 2017 Greatest hospitalityThis is a wonderful accomodation I can highly recommend. Warm-hearted staff will help you with all you need. Breakfast is excellence and the lodges are very comfortable, clean and allow to enjoy silence.Review collected in partnership with this hotel This business uses tools provided by TripAdvisor (or one of its official Review Collection Partners) to encourage and collect guest reviews, including this one.Thank clabier714 Response from DdeHaseth, Owner at Mondi LodgeResponded March 30, 2017Dear Claus & Robin,
Thank you for your lovely review!! Guests like you guys make it easy for us to be warm-hearted :-)
Much love, Danita & co
luisettem2017Willemstad, Curacao1Reviewed March 26, 2017 Jewel of St. MichielThis was our second getaway to Mondi Lodge. As locals we went to unwind and refuel. You feel very connected to nature.
The breakfast is aweaome and everyone around is friendly and service oriented. We will return shortly for a longer stay.Review collected in partnership with this hotel This business uses tools provided by TripAdvisor (or one of its official Review Collection Partners) to encourage and collect guest reviews, including this one.Thank luisettem2017 Response from DdeHaseth, Owner at Mondi LodgeResponded March 28, 2017Dear Luisette and Rafael,
Danki pa boso review! It's an honor to may have welcomed you here again!
Much love, Danita
Updating list... Similar hotelsSee all 112 hotels in CuracaoBaoase Luxury Resort527 reviews#1 of 32 hotels in Willemstad Van der Valk Kontiki Beach Resort1,087 reviews#3 of 32 hotels in Willemstad Scuba Lodge & Suites621 reviews#2 of 32 hotels in Willemstad Santa Barbara Beach & Golf Resort, Curacao2,209 reviews#1 of 1 hotels in Nieuwpoort About Awards & Recognition Certificate of ExcellenceWhat is Certificate of Excellence? TripAdvisor gives a Certificate of Excellence to accommodations, attractions and restaurants that consistently earn great reviews from travelers. Amenities Top amenitiesPoolFree ParkingFree High Speed Internet ( WiFi )Breakfast includedHotel AmenitiesFree ParkingConciergeAirport TransportationBreakfast includedMultilingual StaffBreakfast AvailableRoom amenitiesAir ConditioningRefrigerator in roomMinibarThings to doPoolDetails Price range$126 - $190 (Based on Average Rates for a Standard Room) Hotel classStar rating provided by Expedia.Room typesKitchenette ,Non-Smoking Rooms ,Family Rooms ,Smoking rooms available Number of rooms4 Reservation OptionsTripAdvisor is proud to partner with Orbitz, Hotels.com, Travelocity, Expedia, Hotwire, Cheap Tickets, Priceline, Booking.com, Hotel.de and HRS so you can book your Mondi Lodge reservations with confidence. We help millions of travelers each month to find the perfect hotel for both vacation and business trips, always with the best discounts and special offers. LocationCaribbean >Curacao >Dorp Sint Michiel Also Known AsMondi Lodge Curacao/Dorp Sint Michiel Show More Show Less Add Photo Photos All photos (145) Full view Traveler (76)Room & Suite (44)Dining (11)Pool & Beach (3)Hotel & Grounds (82)Bathroom (3)Family and Play Areas (2)
Nearby Sponsored by: Nearby HotelsSee all 36 hotels in CuracaoBayside Boutique Hotel68 reviews 1.09 miles away Hilton Curacao1,544 reviews 2.21 miles away Blue Bay Curacao432 reviews 1.11 miles away Floris Suite Hotel - Spa & Beach Club801 reviews 2.36 miles away Clarion Hotel & Suites Curacao103 reviews 2.57 miles away Nearby RestaurantsSunset Grill46 reviews 1.16 miles away De buurvrouw276 reviews 3.70 miles away Kokomo beach Curacao474 reviews 1.68 miles away Pirate Bay Beach Bar and Restaurant1,189 reviews 2.10 miles away Nearby AttractionsRed Snapper Diving15 reviews .39 miles away Handelskade622 reviews 2.13 miles away Hato Caves1,169 reviews 3.06 miles away Blue Bay Beach401 reviews 1.10 miles away Questions & AnswersGet quick answers from Mondi Lodge staff and past guests.Note: your question will be posted publicly on the Questions & Answers page.Posting guidelinesSubmitVerification: Room Tips "Ask for the outdoor shower!"ashlin317 months agoRead review "They're all great!"Molly Wover a year agoRead review "All rooms are excellent!"tanja75998over a year agoRead review "The Lodges with the Outdoor Shower (Twin Lodges) make a romantic stay even more exciting."ArubaPat_Catover a year agoRead review Show More Is This Your TripAdvisor Listing? Own or manage this property? Claim your listing for free to respond to reviews, update your profile and much more. Claim Your Listing Know better. Book better. Go better. © 2017 TripAdvisor LLC All rights reserved. Terms of Use | Privacy Policy | Site MapSome photos provided by VFM Leonardo.* TripAdvisor LLC is not a booking agent and does not charge any service fees to users of our site... (more) TripAdvisor LLC is not responsible for content on external web sites. Taxes, fees not included for deals content. EXPLOREAbout UsHelp CenterCURRENCY/COUNTRY$USDUnited States

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Old Set Bible Glass Slides Globe Magic Lantern | eBay Skip to main contenteBayShop by categoryEnter your search keywordAll CategoriesAdvanced or register':' style="margin-right:3px">Hi -User-!'.replace(/-User-/,escape(a)))+"")}catch(b){document.write("")}})();Hi (Sign in to bid or buy)Daily DealsGift CardsSellHelp & ContactMy eBayExpand My eBaySummaryBids/OffersWatch listWish listAll listsPurchase historySellingMy CollectionsFollowed searchesMessagesNotification Back to home page
Details about * old SET BIBLE glass SLIDES * GLOBE * MAGIC Lantern ?
* old SET BIBLE glass SLIDES * GLOBE * MAGIC Lantern ?
Lot of 11 Antique Magic Lantern Glass...
2 OLD KEYSTONE MAGIC LANTERN GLA...
Set of 5 Antique Magic Lantern Slides Glass...
Old Vintage Magic Lantern Glass Slides...
VICTORIAN MAGIC LANTERN GLASS...
Scenes from Old Testament, c.1250,...
(6) OLD CARTOON OR COMIC MAGIC LANTE...
Magic Lantern Glass Slides "Brains Will Tel...
* EASCO - HUGE - BOX END WRENCH 7/8 &...
** Royal Doulton * Miniature * JOHN PE...
** 1967 * FRANKLIN MINT * CHRISTMAS...
** ernormous, Vintage LOOKING * LOCK with...
* Royal Doulton - SMALL -1958 versio...
** Danbury Mint - ADMIRABLY Head...
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eBay item number:150638219299
Click to View Image Album Click to View Image Album Click to View Image Album Click to View Image Album Click to View Image Album Up for BID is this "SET" of these VERY OLD, ANTIQUE "GLASS SLIDES" -- I think these may be used in the Magic Lanterns but I'm not for sure -- Anyway, they are STILL QUITE COLLECTABLE -- these were MADE by the "GLOBE SLIDE & FILM COMPANY -- the "BIBLE" is the THEME of all these GLASS SLIDES -- they MEASURE about 3 1/4 by 4 inches -- the COLOR is QUITE NICE on them -- they are 24 DIFFERENT SLIDES and 23 are PERFECT and one has a crack (but still too good to throw away as it still oooks decent) -- ALL in the ORIGINAL BOX with seperators -- s/h INCLUDES INSURANCE *************** WHAT YOU SEE IN THE PICTURE IS WHAT YOU GET!! ++++++++ *******Please see our OTHER AUCTIONS for more UNIQUE and UNUSUAL ITEMS and combine to save on postage. **** My Business policies: NOTES: I do NOT prefer PayPal; payments made using PayPal MUST be shipped Priority Mail (Priority International for NON-US buyers) to CONFIRMED ADDRESSES ONLY (this "supports" PayPal policies; NOT mine BUT method of shipping is MY option)!! Also; please be aware that I have other things to do besides eBay; so IF you do make an "offer" (on "store" items); please be patient as I may be out-of-town. IF you purchase, PLEASE WAIT for my EMAIL to you with the TOTAL etc as soon as possible. THANK YOU!! Please ASK all questions prior to bidding as all sales are final. Buyer to pay s/h/i (if any amount is in the description, that amount is for USA shipping (more overseas). My "handling" amounts to about $2 to $4.00 on harder to pack items, which helps defray the cost of packing peanuts and bubble wrap. Pennsylvania (PA) residents MUST add 6% sales tax. *** **** Please DO NOT USE "checkout"; I will email WITHIN an HOUR or 2 of the auction ending with a "personal" email giving you the total cost INCLUDING s/h. If you DON'T SEE my email, check you "SPAM MAIL FILTERING CONTROLS" and/or deleted files and MY email should be there!!! If item shows a "s/h" cost for U.S. shipping, you can surely pay if you wish but you'll still receive my email so at least you know who we are!!! LASTLY, the MAJORITY of the items I sell are either ANTIQUES or USED MERCHANDISE, do not EXPECT antiques or used merchandise to be "out-of-the-box" brand new and perfect items. If I say they are new and perfect, they are!! Otherwise, they are USED ANTIQUES or USED merchandise!! Sorry, I gotta say that for those very few ebayers that don't seem to know what "good or very good, used" condition means. ** THANK YOU, Cheers!!! "leprechan2" jlP7070041-45(6) Payment
Magic Lantern Slide Projector,

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Patent US20050233599 - Method for producing material of electronic device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon,...http://www.google.com/patents/US20050233599?utm_source=gb-gplus-sharePatent US20050233599 - Method for producing material of electronic deviceAdvanced Patent SearchTry the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents.Publication numberUS20050233599 A1Publication typeApplicationApplication numberUS 11/153,551Publication dateOct 20, 2005Filing dateJun 16, 2005Priority dateJan 22, 2001Also published asCN1860596A, CN100477113C, CN101399198A, EP1361605A1, EP1361605A4, US20040142577, US20070224837, WO2002058130A1Publication number11153551, 153551, US 2005/0233599 A1, US 2005/233599 A1, US 20050233599 A1, US 20050233599A1, US 2005233599 A1, US 2005233599A1, US-A1-20050233599, US-A1-2005233599, US2005/0233599A1, US2005/233599A1, US20050233599 A1, US20050233599A1, US2005233599 A1, US2005233599A1InventorsTakuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide TadaOriginal AssigneeTokyo Electron Limited, Makoto AndoExport CitationBiBTeX, EndNote, RefManPatent Citations (7), Referenced by (21), Classifications (39) External Links: USPTO, USPTO Assignment, EspacenetMethod for producing material of electronic device
US 20050233599 A1Abstract
A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) it generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure. Images(11) Claims(26)
1. A process for producing electronic device material, wherein an oxide film (SiO2 film) is formed on the surface of a substrate to be processed comprising Si as a main component in the presence of a process gas comprising at least O2 and an inert gas, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits. 2. A process for producing electronic device material according to claim 1, wherein the electronic device is a semiconductor device. 3. A process for producing electronic device material according to claim 2, wherein the oxide film is a gate oxide film (SiO2 film) or an underlying oxide film (underlying SiO2 film) for a gate oxynitride film. 4. A process for producing electronic device material according to claim 1, wherein the oxide film has a thickness of 2.5 nm or less. 5. A process for producing electronic device material according to claim 1, wherein the inert gas is at least one selected from krypton, argon and helium. 6. A process for producing electronic device material according to claim 1, wherein the process gas comprises O2 at a flow rate of 5-500 sccm, and krypton, argon or helium at a flow rate of 500-3000 sccm. 7. A process for producing electronic device material according to claim 1, wherein the SiO2 film is formed at a temperature of room temperature to 700° C. 8. A process for producing electronic device material according to claim 1, wherein the SiO2 film is formed at a pressure of 20-5000 mTorr. 9. A process for producing electronic device material according to claim 1, wherein the plasma is generated by an output of 0.5-5 W/cm2. 10. A process for producing electronic device material, comprising: a step of forming an underlying oxide film (SiO2 film) in the presence of a process gas comprising at least O2 and an inert gas, on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits; and a step of nitriding the surface portion of the underlying SiO2 film, in the presence of a process gas comprising at least N2 and an inert gas, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits. 11. A process for producing electronic device material according to claim 10, wherein the electronic device is a semiconductor device. 12. A process for producing electronic device material according to claim 10 or 11, wherein the process gas further comprises H2. 13. A process for producing electronic device material according to claim 10 or 11, wherein the oxide film is a gate oxide film (SiO2 film) or an underlying oxide film (underlying SiO2 film) for a gate oxynitride film. 14. A process for producing electronic device material according to claim 10 or 11, wherein the oxide film has a thickness of 2.5 nm or less. 15. A process for producing electronic device material according to claim 10, wherein the inert gas is at least one selected from krypton, argon and helium. 16. A process for producing electronic device material according to claim 10, wherein the process gas comprises N2 at a flow rate of 2-500 sccm, and krypton, argon or helium at a flow rate of 200-2000 sccm; or comprises N2 at a flow rate of 2-500 sccm, and krypton, argon or helium at a flow rate of 200-2000 sccm, and H at a flow rate of 1-100 sccm. 17. A process for producing electronic device material according to claim 10, wherein the underlying SiO2 film is nitrided at a temperature of room temperature to 700° C. 18. A process for producing electronic device material according to claim 10, wherein the underlying SiO2 film is nitrided at a pressure of 10-3000 mTorr. 19. A process for producing electronic device material according to claim 10, wherein the nitriding plasma is generated by an output of 0.5-4 W/cm2. 20. A process for producing electronic device material, comprising: a step of forming an underlying oxide film (SiO2 film) in the presence of a process gas comprising at least O2 and an inert gas, on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits; a step of nitriding the surface portion of the underlying SiO2 film, in the presence of a process gas comprising at least N2 and an inert gas, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits; and a step of forming an electrode layer on the SiO2 film or the surface-nitrided underlying SiO2 film (SiON film) by heating the substrate to be processed having the SiO2 film or SiON film in the presence of a layer-forming gas. 21. A process for producing electronic device material according to claim 20, wherein the electrode layer comprises poly-silicon or amorphous-silicon or SiGe. 22. A process for producing electronic device material according to claim 20 or 21, wherein the electronic device is a semiconductor device. 23. A process for producing electronic device material according to claim 20 or 21, wherein the electrode layer is a gate electrode. 24. A process for producing electronic device material according to claim 20, wherein the layer-forming gas is SiH4, the pressure is 20.0-40 Pa (150-300 mTorr), and the temperature is 570-650° C., and the gate electrode to be formed comprises poly-silicon. 25. A process for producing electronic device material according to claim 20, wherein the layer-forming gas is SiH4, the pressure is 20.0-66.7 Pa (150-500 mTorr), and the temperature is 520-570° C., and the gate electrode to be formed comprises amorphous-silicon. 26. A process for producing electronic device material according to claim 20, wherein the layer-forming gas is a mixed gas of GeH4/SiH4=10/90-60/40%, the pressure is 20-60 Pa, the temperature is 460-560° C., the gate electrode to be formed comprises SiGe.
TECHNICAL FIELD [0001] The present invention relates to a process which is suitably usable for the production of materials to be used for electronic devices. The process for producing a material for electronic device according to the present invention may be used, for example, for forming a material to be used for a semiconductor or semiconductor device (for example, those having an MOS-type semiconductor structure). BACKGROUND ART [0002] In general, the production process according to the present invention is widely applicable to the production of materials for electronic device such as semiconductors or semiconductor devices, and liquid crystal devices. For the convenience of explanation, however, the background art relating to semiconductor devices as an example of the electronic devices, will be described here. [0003] Along with the requirement for the fabrication of finer patterns in semiconductor devices in recent years, the demand for a high-quality silicon oxide film (SiO2 film) has been increased remarkably. For example, with respect to the MOS-type semiconductor structure, as the most popular semiconductor device structure, in accordance with the so-called scaling rule, the demand for an extremely thin (e.g., the thickness on the order of 2.5 nm or less) and high-quality gate insulator (SiO2 film) becomes extremely high. [0004] Heretofore, as the materials for such gate insulators, there have industrially been used silicon oxide films (SiO2 films) which have been obtained by directly oxidizing a silicon substrate (or base material) by use of a high-temperature heating furnace of about 850° C. to 1000° C. [0005] However, when the conventional thin gate insulator is simply intended to be thinned so as to provide a thickness thereof of 2.5 nm or less, the leakage current passing through the gate insulator (gate leakage current) becomes strong, and it causes some problems such as increase in the electric power consumption and acceleration of the deterioration in the device characteristics. [0006] In addition, when the conventional thin gate insulator is used, boron atoms which have been incorporated into the gate electrode during the formation of a gate electrode, will penetrate through the SiO2 film to reach the silicon substrate as the material underlying the gate insulator, to thereby cause a problem of deteriorating the semiconductor device characteristic. As one means for solving such a problem, the use of an oxynitride film (SiON film) as the gate insulator material has been investigated. [0007] However, when such an SiON film is simply and directly formed by using a heat oxynitriding process, a large number of nitrogen atoms are incorporated in the interface thereof with the silicon substrate, whereby the resultant device characteristics is inevitably liable to be deteriorated. In addition, in the case of the SiO2/SiN stack structure which has been obtained by combining a thermal oxidation film with an SiN film formation due to CVD (chemical vapor deposition process), traps for carriers are generated in the SiO2/SiN interface, whereby the device characteristics are liable to be deteriorated. Therefore, in the case of such an SiON film formation, it is considered to be promising to nitride an SiO2 film by using plasma. In general, this is because the plasma nitridation (or nitriding) is liable to provide a high-quality gate oxynitride film having a small interface state and having a high nitrogen content (several percents) in the oxide film surface portion. In addition, the use of plasma is also advantageous because it is easy to conduct the nitridation at a low temperature. [0008] On the other hand, when an SiO2 film is intended to be nitrided by heating, a high temperature of 1000° C. or higher is usually required, and as a result, the dopant which has been injected into the silicon substrate is differentially diffused by this thermal step, whereby the device characteristics tend to deteriorate (such a process is disclosed in JP-A (KOKAI; Unexamined Patent Publication) 55-134937, JP-A 59-4059, etc.). [0009] As described above, the use of plasma has various advantages. On the other hand, however, when nitridation is conducted by using plasma, plasma damage can occur, and can deteriorate the device characteristics. DISCLOSURE OF INVENTION [0010] An object of the present invention is to provide a process for producing materials for electronic device which can solve the above-mentioned problem encountered in the prior art. [0011] Another object of the present invention is to provide a process which is capable of providing an electronic device structure comprising an extremely thin (e.g., having a film thickness of 2.5 nm or less) and high-quality oxide film and/or oxynitride film. [0012] A further object of the present invention is to provide a process for producing materials for electronic device which can form an MOS-type semiconductor structure having an extremely thin (e.g., having a film thickness of 2.5 nm or less) and high-quality oxide film and/or oxynitride film. [0013] According to the present invention, there is provided a process for producing electronic device material, wherein an oxide film (SiO2 film) is formed on the surface of a substrate to be processed comprising Si as a main component in the presence of a process gas comprising at least O2 and an inert gas, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits. [0014] The present invention also provides a process for producing electronic device material, comprising: a step of forming an underlying oxide film (SiO2 film) in the presence of a process gas comprising at least O2 and an inert gas, on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits; and a step of nitriding the surface portion of the underlying SiO2 film, in the presence of a process gas comprising at least N2 and an inert gas, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits. [0017] The present invention further provides a process for producing electronic device material, comprising: a step of forming an underlying oxide film (SiO2 film) in the presence of a process gas comprising at least O2 and an inert gas, on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits; a step of nitriding the surface portion of the underlying SiO2 film, in the presence of a process gas comprising at least N2 and an inert gas, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits; and a step of forming an electrode layer on the SiO2 film or the surface-nitrided underlying SiO2 film (SiON film) by heating the substrate to be processed having the SiO2 film or SiON film in the presence of a layer-forming gas. BRIEF DESCRIPTION OF DRAWINGS [0021] FIG. 1 is a schematic vertical sectional view showing an example of the semiconductor device which can be produced by a process for producing an electronic device material according to the present invention. [0022] FIG. 2 is a schematic plan view showing an example of the semiconductor manufacturing equipment for conducting a process for producing electronic device material according to the present invention. [0023] FIG. 3 is a schematic vertical sectional view showing an example of the plasma processing unit comprising a slit plane (or planar) antenna (hereinafter, referred to as “SPA”), which is usable in the process for producing electronic device material according to the present invention. [0024] FIG. 4 is a schematic plan view showing an example of the SPA which is usable in the apparatus for producing electronic device material according to the present invention. [0025] FIG. 5 is a schematic vertical sectional view showing an example of the heating reaction furnace unit which is usable for the process for producing electronic device material according to the present invention. [0026] FIG. 6 is a schematic process flow chart showing examples of the respective steps in the Production process according to the present invention. [0027] FIG. 7 is a schematic sectional view showing an example of the film formation by the production process according to the present invention. [0028] FIG. 8 is a graph showing a leak characteristic of an MOS semiconductor structure which has been provided by the production process according to the present invention. [0029] FIG. 9 is a graph showing a gate leakage current characteristic provided by a production process according to the present invention. [0030] FIG. 10 is a graph showing results of the SIMS analysis of an oxynitride film provided by a production process according to the present invention.
[0031] In the above-mentioned figures, the respective reference numerals have the following meanings: [0032] W: wafer (substrate to be processed), 60: SPA (plain antenna member), 2: oxide film, 2 a: nitrogen-containing layer, 32: plasma processing unit (process chamber), 33: plasma processing unit (process chamber), 47: heating reaction furnace. BEST MODE FOR CONDUCTING THE INVENTION [0033] Hereinbelow, the present invention will be described in detail with reference to the accompanying drawings as desired. In the following description, “%” and “part(s)” representing a quantitative proportion or ratio are those based on mass, unless otherwise noted specifically. [0000] (Formation of Oxide Film) [0034] In a preferred embodiment of the present invention, in the presence of a process gas (or a process gas atmosphere; this meaning is the same as in the description appearing hereinafter) comprising at least O2 and an inert gas, an oxide film (SiO2 film) can be formed on the surface of a substrate to be processed comprising Si as a main component, by use of plasma which is based on the microwave irradiation via (or through the medium of) a plane antenna member having a plurality of slits. [0035] The substrate to be processed which is usable in the present invention is not particularly limited, as long as it comprises Si as a main component, For example, it is preferred to use a known substrate for an electronic device such as silicon (e.g., single-crystal silicon), and glass. [0000] (Process Gas) [0036] In the present invention, at the time of forming an oxide film, the process gas may comprise at least O2 and an inert gas. The inert gas usable in this case is not particularly limited, but it is possible to use a gas (or a combination of two or more kinds of gases) which is appropriately selected from known inert gases. In view of the quality of a film, it is preferred to use an inert gas such as krypton, argon or helium. [0000] (Conditions for Oxide Film Formation) [0037] In an embodiment of the present invention wherein an oxide film is to be formed, in view of the characteristic of the oxide film to be formed, the following conditions may suitably be used: O2: 5-500 sccm, more preferably 50-500 sccm, Inert gas (for example, krypton, argon or helium): 500-3000 scem, more preferably 500-2000 sccm, particularly preferably 1000-2000 Scorn Temperature: room temperature (25° C.) to 700° C., more preferably 200-700° C., particularly preferably 200-500° C., Pressure: 20-5000 mTorr, more preferably 500-3000 mtorr, particularly preferably 1000-2000 mTorr, Microwave: 0.5-5 W/cm2, more preferably 0.5-4 W/cm2 (Examples of Suitable Conditions) [0041] In the present invention, in view of the characteristic of the oxide film to be formed, the following conditions may be raised as examples of the preferred conditions: [0042] A preferred example of process gas: Gas comprising O2 at a flow rate of 50-500 sccm, and krypton, argon or helium at a flow rate of 500-2000 sccm. [0043] A preferred example of temperature in the formation of SiO2 film: A temperature of 300-700° C. is exemplified. [0044] As a preferred example of pressure in the formation of SiO2 film, a pressure of 2.7-270 Pa (20-2000 mTorr) is exemplified. [0045] As a preferred example of plasma in the formation of Sio2 film, plasma which is formed by the output of 1-4 W/cm2 is exemplified. [0000] (Nitridation of SiO2 Oxide Film) [0046] In the present invention, it is preferred to nitride an SiO2 oxide film, as desired, by using nitriding plasma based on the microwave irradiation via a plane antenna member. The SiO2 oxide film to be nitrided in this case is not particularly limited. In view of the film quality and productivity, it is preferred to use an underlying oxide film (SiO2 film) which has been formed on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member in the presence of a process gas comprising an inert gas and O2. [0047] More specifically, in another preferred embodiment of the present invention, it is possible that an underlying oxide film (SiO2 film) is formed on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member in the presence of a process gas comprising an inert gas and O2; and then the surface of the above-mentioned underlying oxide film is nitrided by using plasma based on microwave irradiation via a plane antenna member in the presence of a process gas comprising at least an inert gas and N2. [0000] (Process Gas) [0048] In above embodiment of the present invention for nitriding the SiO2 oxide film, the process gas comprises at least N2 and an inert gas. The inert gas usable in this case is not particularly limited, but it is possible to use a gas (or a combination of two or more kinds of gases) which is appropriately selected from known inert gases. In view of the quality of a film, it is preferred to use an inert gas such as krypton, argon or helium. [0000] (Conditions for Nitriding Oxide Film) [0049] In an embodiment of the present invention wherein an oxide film is to be formed, in view of the characteristic of the surface-nitrided oxide film to be formed, the following conditions may suitably be used: N2; 2-500 sccm, more preferably 4-200 sccm Inert gas (for example, krypton, argon or helium): 200-2000 sccm, more preferably 500-2000 sccm, particularly preferably 1000-2000 sccm H2: 1-100 sccm, more preferably 2-50 accm, particularly preferably 5-30 sccm Temperature: room temperature (25° C.) to 700° C., more preferably 200-500° C. Pressure: 10-3000 mTorr, more preferably 20-1000 mTorr, particularly preferably 50-1000 mTorr Microwave: 0.5-4 W/cm2, more preferably 0.5-3 W/cm2 (Examples of Preferred Conditions) [0056] In the production process according to the present invention, in view of the characteristic of a surface-nitrided oxide film to be formed, the following conditions can be exemplified as preferred examples. [0057] A preferred example of process gas in the nitridation of SiO2 film a gas comprising N2 at a flow rate of 4-200 sccm, and krypton, argon or helium at a flow rate of 500-2000 sccm; or a gas comprising N2 at a flow rate of 4-200 scam, krypton, argon or helium at a flow rate of 500-2000 sccm, and H2 at a flow rate of 2-30 sccm. [0058] A preferred example of temperature in the nitridation of SiO2 films a temperature of room temperature to 700° C. is exemplified. [0059] A preferred example of pressure in the nitridation of SiO2 film: a pressure of 2.7-135 Pa (20-1000 mTorr) is exemplified. [0060] A preferred example of plasma in the nitridation of SiO2 film: plasma which is formed by the output of 0.5-3 w/cm2. [0000] (Embodiment of Formation of Electrode Layer) [0061] In the present invention, it is also possible to form an electrode layer on an SiO2 film or an SiON film, as desired. As the electrode layer, in view of the device characteristics, it is preferred to use an electrode layer comprising poly-silicon or amorphous-silicon or SiGe. The underlying SiO2 film or SiON film to be used for such a purpose is not particularly limited. In view of the film quality and productivity, it is preferred to use an underlying oxide film (SiO2 film) which has been formed on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member in the presence of a process gas comprising at least an inert gas and O2; or an SiON film which has been formed by using plasma based on microwave irradiation via a plane antenna member in the presence of a process gas comprising at least an inert gas and N2. [0062] More specifically, in a preferred embodiment of the present invention, it is possible that an underlying oxide film (SiO2 film) is formed on the surface of a substrate to be processed comprising Si as a main component, by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits, in the presence of a process gas comprising at least an inert gas and O2; the surface of the above-mentioned underlying SiO2 film is nitrided by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits, in the presence of a process gas comprising at least an inert gas and N2; and the substrate to be processed having the above-mentioned SiO2 film or surface-nitrided underlying SiO2 film (SiON film) is heated in the presence of a layer-forming gag, to thereby an electrode layer (for example, electrode layer comprising poly-silicon or amorphous-silicon or SiGe) on the above-mentioned SiO2 film or SiON film. (Electrode-Forming Gas) [0065] The electrode-forming gas which is usable in the present invention is not particularly limited. In accordance with the material and/or quality of an electrode layer to be formed, it is possible to use a gas by appropriately selecting either one of or a combination of at least two kinds of known electrode-forming gases. [0066] When the electrode to be formed comprises poly-silicon, in view of the device characteristics and productivity, the electrode-forming gas may preferably comprise SiH4. In this case, preferred electrode-forming conditions are as follows: Pressure; 20.0-40 Pa (150-300 mtorr), more preferably 26-33.3 Pa (200-250 mTorr) Temperature: 570-650° C., more preferably 600-630° C. [0069] When the electrode to be formed comprises amorphous-silicon, in view of the device characteristics and productivity, the electrode-forming gas may preferably comprise SiH4. In this case, preferred electrode-forming conditions are as follows: Pressure: 20.0-66.7 Pa (150-500 mtorr), Temperature: 520-570° C. [0072] When the electrode to be formed comprises SiGe, in view of the device characteristics, the electrode-forming gas may preferably comprise GeH4/SiH4. In this case, preferred electrode-forming conditions are as follows: Gas composition: Mixed gas of GeH4/SiH4=10/90-60/40%, Pressure: 20-60 Pa, Temperature: 460-560° C. (Plane Antenna Member) [0076] The present invention is characterized in that a high-density plasma having a low electron temperature is generated by irradiating microwave via a plane antenna member having a plurality of slits; and the surface of a substrate to be processed is oxidized (as desired, nitrided) by utilizing the generated plasma. As a result, the present invention can provide a process which accomplishes a light plasma damage, and a high reactivity at a substrate low temperature. [0077] For example, a paper (Ultra Clean Technology, vol. 10 Supplement 1, p. 32, 1998, published by Ultra Clean Society) may be referred to, with respect to the details of microwave plasma apparatus which has such a plane antenna having many slits and is capable of generating plasma having a low electron temperature, providing a light plasma damage, and a high plasma density. [0078] When the above new plasma apparatus is used, it can easily provide a plasma having an electron temperature of 1.5 eV or less, and plasma sheath voltage of several volts or less. Accordingly, in this case, the plasma damage can remarkably be reduced, as compared with that based on the conventional plasma (plasma sheath voltage of about 50V). A new plasma apparatus comprising this plane antenna is capable of providing high-density radicals even at a temperature of room temperature to about 700° C., it is considered that it can suppress the deterioration of device characteristics due to heating, and it can provide a process having a high reactivity even at a low temperature. [0079] On the other hand, even when plasma processing is used, the prior art has never provided a high-quality oxide film or oxynitride film having an extremely thin film thickness (erg., oxide film or oxynitride film having various characteristics at a high level, such as those which are required for the next-generations MOS-type semiconductor structure) yet. For example, as the next-generations MOS-type semiconductor structure, there is demanded an MOS-type semiconductor structure having an oxide film or oxynitride film having a film thickness of 2.5 nm or less. In this case, in view of device characteristics, it is considered to be suitable to adopt an MOs-type semiconductor structure having a gate electrode such as that comprising poly-silicon, amorphous-silicon, or SiGe. However, in the prior art, there has never been found a process for producing a semiconductor structure having an extremely thin and high-quality oxide film or oxynitride film. [0000] (Preferred Plasma) [0080] The characteristics of the plasma which may preferably be used in the present invention are as follows. Electron temperature; less than 2 eV Density: 1011-1013 Uniformity in plasma density; ±3% or less [0084] As described above, the process according to the present invention can form a high-quality oxide film and/or oxynitride film having a small film thickness. Therefore, when another layer (for example, electrode layer) is formed on such an oxide film and/or an oxynitride film, a semiconductor device structure which is excellent in the characteristic may easily be formed. [0085] In particular, the process according to the present invention can form a high-quality oxide film and/or oxynitride film having an extremely thin film thickness (for example, film thickness of 2.5 nm or less), Accordingly, for example, when poly-silicon or amorphous-silicon or SiGe is used as a gate electrode on this oxide film and/or oxynitride film, an MOS-type semiconductor structure having a high performance can be formed. [0000] (Preferred Characteristic of Oxide Film) [0086] The present invention can easily produce an oxide film having a preferred characteristic as descried below. [0087] Physical film thickness: 0.8 nm to an arbitrary film thickness, Leakage characteristic one which is comparable to that of Dry Ox, to 1/10 times that of Dry Ox, Film uniformity: t 6% or less (Preferred Characteristic of Oxynitride Film) [0090] The present invention can easily produce an oxynitride film having a preferred characteristic as descried below. Surface nitrogen concentration: at most 20% (as shown in FIG. 10) [0092] FIG. 10 shows results of SIMS analysis of an oxide film which has been subjected to SPA-nitridation. In this analysis, nitridation was conducted on the underlying oxide film 15A for 8 seconds and 25 seconds, respectively. As shown in this figure, high-density nitrogen atoms are incorporated in the surface region, and it is possible to conduct nitriding while avoiding the deterioration of device characteristics due to the mixing of nitrogen atoms into the interface. [0000] (Preferred Characteristic of MOS Semiconductor Structure) [0093] The extent or range to which the production process according to the present invention is applicable is not particularly limited. The extremely thin high-quality oxide film and/or oxynitride film which can be formed by the present invention may particularly preferably be utilized as an insulator constituting a semiconductor device (particularly, gate insulator of an MOS semiconductor structure). [0094] The present invention can easily produce an MOS semiconductor structure having a preferred characteristic as follows. When the characteristic of the oxide film and/or oxynitride film which has been formed by the present invention is evaluated, for example, instead of the evaluation of the physical property of the above-mentioned oxide film and/or oxynitride film per se, it is possible that a standard MOS semiconductor structure as described in a paper (OYO BUTURI (Applied Physics), Vol. 69, No. 9, pp. 1049-1059 (2000)) is formed, and the characteristic of the resultant MOS is evaluated. This is because, in such a standard MOB structure, the characteristic of the oxide film and/or oxynitride film constituting the structure has a strong influence on the resultant MOS characteristic. [0095] Electric film thickness (equivalent oxide film thickness) 1.0-2.5 nm [0096] Leakage characteristic: the leakage was reduced by a factor of a half to one digit, as compared with that of DryOx. [0097] Uniformity in film thickness ±2% or less [0000] (One Embodiment of Production Apparatus) [0098] Hereinbelow, a preferred embodiment of the production process according to the present invention is described. [0099] At first, as an example of the semiconductor device structure which can be produced by the process for producing electronic device material according to the present invention, there is described a semiconductor device having an MOS structure comprising a gate insulator as an insulating film with reference to FIG. 1. [0100] Referring to FIG. 1A, the reference numeral 1 denotes a silicon substrate, the reference numeral 11 denotes a field oxide film, the reference numeral 2 denotes a gate insulator, and the reference numeral 13 denotes a gate electrode in FIG. 1A. As describe hereinabove, the production process according to the present invention can form an extremely thin and high-quality gate insulator 2, The gate insulator 2 comprises or consisting of a high-quality insulating film which has been formed at the interface thereof with the silicon substrate 1, as shown in FIG. 1B. For example, the gate insulator 2 comprises an oxide film 2 having a thickness of about 2.5 nm. [0101] In this instance, the high-quality oxide film 2 may preferably comprise a silicon oxide film (hereinafter, referred to as “SiO2 film”) which has been produced by a method wherein a substrate to be processed comprising Si as a main component is irradiated with microwave via a plane antenna member having a plurality of slits in the presence of a process gas comprising O2 and an inert gas, to thereby generate plasma; and the SiO2 film is formed on the surface of the above-mentioned substrate to be processed, by using the thus generated plasma. The use of such an SiO2 film is, as described hereinafter, characterized in that interfacial quality (for example, interface state) between the respective films is good and it is easy to obtain a good gate leakage characteristic when an MOS structure having the SiO2 film is constituted. [0102] It is also possible to nitride the surface of the silicon oxide film 2, as desired. On the nitrided surface of the silicon oxide film 2, a gate electrode 13 comprising Si as a main component (poly-silicon or amorphous-silicon) is formed. [0000] (One Embodiment of Production Process) [0103] Next, there is described a process for producing an electronic device material which comprises such an silicon oxide film 2, a nitrided surface portion 2 a, and a gate electrode 13 disposed thereon. [0104] FIG. 2 is schematic view (schematic plan view) showing an example of the total arrangement of a semiconductor manufacturing equipment 30 for conducting the process for producing electronic device material according to the present invention. [0105] AS shown in FIG. 2, in a substantially central portion of the semiconductor manufacturing equipment 30, there is disposed a transportation chamber 31 for transporting a wafer W (FIG. 3). Around the transportation chamber 31, there are disposed: plasma processing units 32 and 33 for conducting various treatments on the wafer, two load lock units 34 and 35 for conducting the communication/cutoff between the respective processing chambers, a heating unit 36 for operating various heating treatments, and a heating reaction furnace 47 for conducting various heating treatments on the wafer. These units are disposed so as to surround the transportation chamber 31. Alternatively, it is also possible to provide the heating reaction furnace 47 independently and separately from the semiconductor manufacturing equipment 30. On the side of the load lock units 34 and 35, a preliminary cooling unit 45 and a cooling unit 46 for conducting various kinds of preliminary cooling and cooling treatments are disposed. [0106] In the inside of transportation chamber 31, transportation arms 37 and 38 are disposed, so as to transport the wafer W (FIG. 3) between the above-mentioned respective units 32-36. [0107] On the foreground side of the load lock units 34 and 35 in this figure, loader arms 41 and 42 are disposed. [0108] These loader arms 41 and 42 can put wafer W in and out with respect to four cassettes 44 which are set on the cassette stage 43, which is disposed on the foreground side of the loader arms 41 and 42. [0109] In FIG. 2, as the plasma processing units 32 and 33, two plasma processing units of the same type are disposed in parallel. [0110] Further, it is possible to exchange both of the plasma processing units 32 and 33 with a single-chamber type CVD process unit. It is possible to set one or two of such a single-chamber type CVD process unit in the position of plasma processing units 32 and 33. [0111] When two-plasma processing units 32 and 33 are used, it is possible that an SiO2 film is formed in the plasma processing unit 32, and the SiO2 film is surface-nitrided in the plasma processing unit 33. Alternatively, it is also possible that the formation of an SiO2 film and the surface-nitriding of the SiO2 film are conducted in parallel, in the plasma processing units 32 and 33. [0112] Further, it is also possible that an SiO2 film is formed in another apparatus, and the SiO2 film is surface-nitrided in parallel, in the plasma processing units 32 and 33. [0000] (One Embodiment of Film Formation of Gate Insulator) [0113] FIG. 3 is a schematic sectional view in the vertical direction showing a plasma processing unit 32 (or 33) which is usable in the film formation of the gate insulator 2. [0114] Referring to FIG. 3, reference numeral 50 denotes a vacuum container made of, e.g., aluminum. In the upper portion of the vacuum container 50, an opening portion 51 is formed so that the opening portion 51 is larger than a substrate (for example, wafer W). A top plate 54 in a flat cylindrical shape made of a dielectric such as quartz and aluminum nitride is provided so as to cover the opening portion 51. In the side wall of the upper portion of vacuum container 50 which is below the top plate 54, gas feed pipes 72 are disposed in the 16 positions, which are arranged along the circumferential direction so as to provide equal intervals therebetween. A process gas comprising at least one kind of gas selected from O2, inert gases, N2, H2, etc., can be supplied into the plasma region P in the vacuum container so from the gas feed pipes 72 evenly and uniformly. [0115] On the outside of the top plate 54, there is provided a radio-frequency power source, via a plane antenna member having a plurality of slits, which comprises e.g., a slit plane antenna (SPA) made from a copper plate, for example. As the radio-frequency power source, a waveguide 63 is disposed on the top plate 54 by the medium of the SPA 60, and the waveguide 63 is connected to a microwave power supply 61 for generating microwave of 2.45 GHz, for example. The waveguide 63 comprises a combination of: a flat circular waveguide 63A, of which lower end is connected to the SPA 60; a circular waveguide 63B, one end of which is connected to the upper surface side of the circular waveguide 63A; a coaxial waveguide converter 63C connected to the upper surface side of the circular waveguide 63B; and a rectangular waveguide 63D, one end of which is connected to the side surface of the coaxial waveguide converter 63C so as to provide a right angle therebetween, and the other end of which is connected to the microwave power supply 61. [0116] In the present invention, a frequency region including UHF and microwave is referred to as radio-frequency (or high-frequency) region. The radio-frequency power supplied from the radio-frequency power source may preferably have a frequency of not smaller than 300 MHz and not larger than 2500 MHz, which may include UHP having a frequency of not smaller than300 MHz and microwave having a frequency of not smaller than 1 GHz. In the present invention, the plasma generated by the radio-frequency power is referred to as a radio-frequency plasma. [0117] In the inside of the above-mentioned circular waveguide 63B, an axial portion 62 of an electroconductive material is coaxially provided, so that one end of the axial portion 62 is connected to the central (or nearly central) portion of the SPA 60 upper surface, and the other end of the axial portion 62 is connected to the upper surface of the circular waveguide 63B, whereby the circular waveguide 63B constitutes a coaxial structure. As a result, the circular waveguide 63B is constituted so as to function as a coaxial waveguide. [0118] In addition, in the vacuum container 50, a stage 52 for carrying the wafer W is provided so that the stage 52 is disposed opposite to the top plate 54. The stage 52 contains a temperature control unit (not shown) disposed therein, so that the stage can function as a hot plate. Further, one end of an exhaust pipe 53 is connected to the bottom portion of the vacuum container 50, and the other end of the exhaust pipe 53 is connected to a vacuum pump 55. [0000] (One Embodiment of SPA) [0119] FIG. 4 is a schematic plan view showing an example of SPA 60 which is usable in an apparatus for producing an electronic device material according to the present invention. [0120] As shown in this FIG. 4, on the surface of the SPA 60, a plurality of slots 60 a, 60 a, . . . . are provided in the form of concentric circles, Each slot 60 a is a substantially square penetration-type groove. The adjacent slots are disposed perpendicularly to each other and arranged so as to form a shape of alphabetical “T”-type character. The length and the interval of the slot 60 a arrangement are determined in accordance with the wavelength of the microwave supplied from the microwave power supply unit 61. [0000] (One Embodiment of Heating Reaction Furnace) [0121] FIG. 5 is schematic sectional view in the vertical direction showing an example of the heating reaction furnace 47 which is usable in an apparatus for producing an electronic device material according to the present invention. [0122] As shown in FIG. 5, a processing chamber 82 of the heating reaction furnace 47 chamber is formed into an air-tight structure by using aluminum, for example. A heating mechanism and a cooling mechanism are provided in the processing chamber 82, although these mechanisms are not shown in FIG. 5. [0123] As shown in FIG. 5, a gas introduction pipe 83 for introducing a gas into the processing chamber 82 is connected to the upper central portion of the processing chamber 82, the inside of the processing chamber 82 communicates with the inside of the gas introduction pipe 83. In addition, the gas introduction pipe 83 is connected to a gas supply source 84. A gas is supplied from the gas supply source 84 into the gas introduction pipe 83, and the gas is introduced into the processing chamber 82 through the gas introduction pipe 83. As the gas in this case, it is possible to use one of various gases such as raw material for forming a gate electrode (electrode-forming gas) such as silane, for example. As desired, it is also possible to use an inert gas as a carrier gas. [0124] A gas exhaust pipe 85 for exhausting the gas in the processing chamber 82 is connected to the lower portion of the processing chamber 82, and the gas exhaust pipe 85 is connected to exhaust means (not shown) such as vacuum pump. On the basis of the exhaust means, the gas in the processing chamber 82 is exhausted through the gas exhaust pipe 85, and the processing chamber 82 is maintained at a desired pressure. [0125] In addition, a stage 87 for carrying wafer w is provided in the lower portion of the processing chamber 82. [0126] In the embodiment as shown in FIG. 5, the wafer W is carried on the stage 87 by means of an electrostatic chuck (not shown) having a diameter which is substantially the same as that of the wafer W. The stage 87 contains a heat source means (not shown) disposed therein, to thereby constitute a structure wherein the surface of the wafer w to be processed which is carried on the stage 87 can be adjusted to a desired temperature. [0127] The stage 87 has a mechanism which is capable of rotating the wafer w carried on the stage 87, as desired. [0128] In FIG. 5, an opening portion 82 a for putting the wafer w in and out with respect to the processing chamber 82 is provided on the surface of the right side of the processing chamber 82 in this figure. The opening portion 82 a can be opened and closed by moving a gate valve 98 vertically (up and down direction) in this figure. In FIG. 5, a transportation arm (not shown) for transporting the wafer is provided adjacent to the right side of the gate valve 98. In FIG. 5, the wafer W can be carried on the stage 87, and the wafer W after the processing thereof is transported from the processing chamber 82, as the transportation arm enters the processing chamber 82 and goes out therefrom through the medium of the opening portion 82 a. [0129] Above the stage 87, a shower head 88 as a shower member is provided. The shower head 88 is constituted so as to define the space between the stage 87 and the gas introduction pipe 83, and the shower head 88 is formed from aluminum, for example. [0130] The shower head 88 is formed so that the gas exit 83 a of the gas introduction pipe 83 is positioned at the upper central portion of the shower head 88. The gas is introduced into the processing chamber 82 through gas feeding holes 89 provided in the lower portion of the shower head 88. [0000] (Embodiment of the Insulating Film Formation) [0131] Next, there is described a preferred embodiment of the process wherein an insulating film comprising a gate insulator 2 is formed on a wafer W by using the above-mentioned apparatus. [0132] FIG. 6 is a schematic production process flowchart showing an example of the flow of the respective steps constituting the production process according to the present invention. [0133] Referring to FIG. 6, in a preceding step, a field oxide film 11 (FIG. 1A) is formed on the surface of a wafer W. [0134] Subsequently, a gate valve (not shown) provided at the side wall of the vacuum container 50 in the plasma processing unit 32 (FIG. 2) is opened, and the above-mentioned wafer W comprising the silicon substrate 1, and the field oxide film 11 formed on the surface of the silicon substrate 1 is placed on the stage 52 (FIG. 3) by means of transportation arms 37 and 38. [0135] Next, the gate valve was closed so as to seal the inside of the vacuum container 50, and then the inner atmosphere therein is exhausted by the vacuum pump 55 through the exhaust pipe 53 so as to evacuate the vacuum container 50 to a predetermined degree of vacuum and a predetermined pressure in the container 50 is maintained. On the other hand, microwave (e.g., of 1.80 GHz and 2200 W) is generated by the microwave power supply 61, and the microwave is guided by the waveguide so that the microwave is introduced into the vacuum container 50 via the SPA 60 and the top plate 54, whereby radio-frequency plasma is generated in the plasma region P of an upper portion in the vacuum container 50. [0136] Herein, the microwave is transmitted in the rectangular waveguide 63D in a rectangular mode, and is converted from the rectangular mode into a circular mode by the coaxial waveguide converter 63C. The microwave is then transmitted in the cylindrical coaxial waveguide 63B in the circular mode, and transmitted in the circular waveguide 63A in the expanded state, and is emitted from the slots 60 a of the SPA 60, and penetrates the plate 54 and is introduced into the vacuum container 50. In this case, microwave is used, and accordingly high-density plasma can be generated. Further, the microwave is emitted from a large number of slots 60 a of the SPA 60, and accordingly the plasma is caused to have a high plasma density. [0137] Subsequently, while the wafer W is heated to 400° C., for example, by regulating the temperature of the stage 52, the first step (formation of oxide film) is conducted by introducing via the gas feed pipe 72 a process gas for an oxide film formation comprising an inert gas such as krypton and argon, and O2 gas at flow rates of 1000 sccm, and 20 sccm respectively. [0138] In this process, the introduced process gas is activated (converted into plasma) by plasma flux which has been generated in the plasma processing unit 32, and on the basis of the thus generated plasma, as shown in the schematic sectional view of FIG. 7A, the surface of the silicon substrate 1 is oxidized, to thereby form an oxide film (SiO2 film) 2. In this manner, the oxidation step is conducted for 40 seconds, for example, so that a gate oxide film or underlying oxide film form (underlying SiO2 film) for forming a gate oxynitride film having a thickness of 2.5 nm can be formed. [0139] Next, the gate valve (not shown) is opened, and the transportation arms 37 and 38 (FIG. 2) are caused to enter the vacuum container 50, so as to receive the wafer W on the stage 52. The transportation arms 37 and 38 take out the wafer W from the plasma processing unit 32, and then set the wafer W in the stage in the adjacent plasma processing unit 33 (step 2). Alternatively, depending on the application or usage of the wafer, it is also possible to transport the wafer to the heat reaction furnace 47 without nitriding the gate oxide film. [0000] (Embodiment of Nitride-Containing Layer Formation) [0140] Subsequently, the wafer w is surface-nitrided in the plasma processing unit 33, and a nitride-containing layer 2 a (FIG. 7B) is formed on a surface portion of the underlying oxide (underlying SiO2) film 2 which has been formed in advance. [0141] At the time of the surface nitriding, for example, it is possible that argon gas and N2 gas are introduced into the container 50 from the gas introduction pipe at flow rates of 1000 sccm and 20 sccm, respectively, in a state where the wafer temperature is 400° C., for example, and the process pressure is 66.7 Pa (500 mTorr), for example, in the vacuum container 50. [0142] On the other hand, microwave, e.g., of 2 W/cm2 is generated from the microwave power supply 61, and the microwave is guided by the waveguide so that the microwave is introduced into the vacuum container 50 via the SPA 60 and the top plate 54, whereby radio-frequency plasma is generated in the plasma region P of an upper portion in the vacuum container 50. [0143] In this process (surface nitriding), the introduced gas is converted into plasma, and nitrogen radicals are formed. These nitrogen radicals are reacted on the SiO2 film disposed on the wafer W surface, to thereby nitride the SiO2 film surface in a relatively short period. In this way, as shown in FIG. 7B, a nitrogen-containing layer 2 a is formed on the surface of the underlying oxide film (underlying SiO2 film) 2 on the wafer W. [0144] It is possible that a gate oxynitride film (SiON film) having a thickness of about 2 nm in terms of the equivalent film thickness by conducting this nitriding treatment for 20 seconds, for example. [0000] (Embodiment of Gate Electrode Formation) [0145] Next, a gate electrode 13 (FIG. 1A) is formed on the SiO2 film on the wafer W, or on the SiON film which has been formed by nitriding the underlying SiO2 film on the wafer W. In order to form the gate electrode 13, the wafer w on which the gate oxide film or gate oxynitride film has been formed is taken out from each of the plasma processing unit 32 or 33, so as to once accommodate the wafer w in the transportation chamber 31 (FIG. 2) side, and then the wafer W is accommodated into the heating reaction furnace 47 (step 4). In the heating reaction furnace 47, the wafer W is heated under a predetermined processing condition to thereby form a predetermined gate electrode 13 on the gate oxide film or gate oxynitride film. [0146] At this time, it is possible to select the processing condition depending on the kind of the gate electrode 13 to be formed. [0147] More specifically, when the gate electrode 13 comprising poly-silicon is intended to be formed, the step is conducted under conditions such that SiH4 is used as the process gas (electrode-forming gas), the pressure is 20.0-33.3 Pa (150-250 mTorr), and the temperature is 570-630° C. [0148] On the other hand, when the gate electrode 13 comprising amorphous-silicon is intended to be formed, the step is conducted under conditions such that SiH4 is used as the process gas (electrode-forming gas), the pressure is 20.066.7 Pa (150-500 mTorr), and the temperature is 520-570° C. [0149] Further, when the gate electrode 13 comprising SiGe is intended to be formed, the step is conducted under conditions such that, a mixture gas of GeH4/SiH4=10/90-60/40% is used, the pressure is 20-60 Pa, and the temperature is 460-560′C. [0000] (Quality of Oxide Film) [0150] In the above-mentioned first step, at the time of forming the gate oxide film or the underlying oxide film for gate oxynitride film, the wafer w comprising Si as a main component is irradiated with microwave in the presence of a process gas via a plane antenna member (SPA) having a plurality of slits, so as to form plasma comprising oxygen (O2) and an inert gas, to thereby form the oxide film on the surface of the above-mentioned substrate to be processed. As a result, a high-quality film can be provided, and the control of the film quality can successfully be conducted. [0151] The quality of the oxide film in the first process is high as shown in the graph of FIG. 8. [0152] The FIG. 8 shows the leakage characteristic of an MOS-type semiconductor structure which has been formed on a silicon wafer W by the process for producing the electronic device material regarding the above-mentioned embodiment. In this graph, the ordinate is the value of the leakage current, and the abscissa is the electric film thickness (equivalent film thickness). [0153] In FIG. 8, the graph (1) shown by a solid line denotes the leakage characteristic of the thermal oxide film (Dryox) which has been formed by the conventional thermal oxidation process (Dry thermal oxidation process), for the purpose of comparison, and the graph (2) denotes the leakage characteristic of the oxide film (SPAOX) which has been obtained by the plasma processing by use of SPA in the presence of O2 and argon as an inert gas. [0154] As clearly understood from the graph of FIG. 8, the value of the leakage of the oxide film (2) which has been formed by the process for producing electronic device material according to the present invention is low, as compared with the leakage characteristic (1) of the thermal oxidation film which has been formed by the conventional thermal oxidation process. Therefore, a low power consumption is realized and good device characteristic can be obtained by using the oxide film formed by the present invention, [0000] (Presumed Mechanism for High-Quality Oxide Film) [0155] As described above, as compared with those of the thermal oxide film, a high-quality oxide film (gate oxide film, for example) having a low interface state could be obtained by a process for producing electronic device material according to the present invention. [0156] According to the present inventor's knowledge and investigations, the reason for the improvement in the film quality of the oxide film which has been formed by the above-mentioned process may be presumed as follows. [0157] Thus, the plasma which has been formed by irradiating a process gas with microwave by use of an SPA is one having a relatively low electron temperature. Therefore, the bias between the plasma and the surface of the substrate to be processed can be suppressed to a relatively low value, and the plasma damage is light. Therefore, it is considered that an SiO2 film having a good interfacial quality can be formed as shown in FIG. 8. [0000] (Presumed Mechanism for High-Quality Oxynitride Film) [0158] In addition, the oxynitride film which has been obtained by the surface nitriding in the above-mentioned second step has an excellent quality. According to the present inventor's knowledge and investigations, the reason for such a film quality may be presumed as follow. [0159] Thus, the nitrogen radicals which have been generated on the oxide film surface on the basis of the above-mentioned SPA have a high density, and therefore they can introduce nitrogen atoms in a surface portion of the oxide film, to thereby mix the nitrogen radicals therein at a concentration of several percents. In addition, as compared with the generation of nitrogen radicals by heat, high-density radicals can be generated even at a low temperature (around room temperature)! whereby the deterioration in the device characteristic due to heat (represented by those due to the diffusion of a dopant) can be suppressed. Further, the nitrogen atoms in the film are incorporated in the surface portion of the oxide film, and accordingly, they can improve the dielectric constant and further can exhibit a certain performance (such as effect of preventing the penetration of boron atoms), without deteriorating the interfacial quality. [0000] (Presumed Mechanism for Preferred Mos Characteristic) [0160] Further, when the gate electrode is formed by the heat treatment under a specific condition in the above-mentioned third step, the resultant MOS-type semiconductor structure has an excellent characteristic. According to the present inventors' knowledge and investigations, the reason therefor may be presumed as follows. [0161] In the present invention, as described above, an extremely thin high-quality gate insulator can be formed. Based on a combination of the high-quality gate insulator (gate oxide film and/or gate oxynitride film) and the gate electrode (for example, SiGe, amorphous-silicon, poly-silicon by CVD) which has been formed on the high-quality gate insulator, it is possible to realize a good transistor characteristic (such as good leakage characteristic). [0162] Further, when a cluster-type apparatus as shown in FIG. 2 is used, the exposure of the gate insulator to the atmosphere can be avoided during a period between the formation of the gate oxide film or gate oxynitride film, and the formation of the gate electrode, to thereby further improve the yield and device characteristic. EXAMPLES [0163] Hereinbelow, the present invention will be described in more detail with reference to Examples. [0164] By a process for producing electronic device material according to the present invention, an underlying SiO2 film having a film thickness of 1.8 nm was formed on an N-type silicon substrate which had been subjected to element-isolation formation, by means of an appratus shown in FIG. 2 by using SPA plasma in the process unit 32. The resultant total thickness was 1.8 nm in terms of oxide film thickness (equivalent film thickness). The conditions for the underlying SiO2 film formation were: O2/Ar2=200 scam/2000 sccm, a pressure of 2000 mTorr, a microwave power of 3 W/cm2, and a temperature of 400° C. [0165] The conditions for nitriding the underlying SiO2 film were: N2/Ar2 flow rate=40 sccm/1000 sccm, a pressure of 7 Pa (50 mTorr), a microwave of 2 W/cm2, and a temperature of 400° C. The nitridation time was changed so as to provide values of 10 seconds, 20 seconds, and 40 seconds. A throughput of 25 sheets/hour per one chamber was achieved, and it was confirmed that such a throughput was sufficiently applicable to an industrial use. [0166] Subsequently to the gate insulator formation, a P-type poly-silicon gate electrode was formed, and the equivalent film thickness was determined from the resultant C-V characteristic. As a result, the equivalent film thickness was decreased to about 1.4 nm, and the uniformity in the film thickness was 4% in terms of three-sigma, whereby good results were provided. [0167] Further, the gate leakage current characteristic was measured. In FIG. 9, the ordinate is the leakage current characteristic, and the abscissa is the electric film thickness (equivalent film thickness), The graph (1) shown by a straight line denotes the leakage characteristic of a normal (or standard) thermal oxide film, and the graph (2) shown by points denotes the leakage characteristic of a film which had been obtained by nitridation after the SPA oxidation. As shown by the graph (2), a reduction in the equivalent film thickness was observed along with an increase in the nitridation period. In addition, under the nitridation condition of 40 seconds, the leakage current was decreased by a factor of about one digit, at most, as compared with that of the normal thermal oxide film. [0168] As described hereinabove, the process for producing electronic device material according to the present invention could provide a high-performance MOS-type semiconductor structure having a good electric characteristic at a throughput which is sufficiently applicable to an industrial use. INDUSTRIAL APPLICABILITY [0169] As described hereinabove, by use of a process for producing an electronic device according to the present invention, a substrate to be processed comprising Si as a main component is irradiated in the presence of a process gas with microwave via a plane antenna member having a plurality of slits (so-called SPA antenna), whereby plasma is directly supplied to the silicon-containing substrate to form an oxide film (SiO2 film). As a result, the present invention can preferably control the characteristic of the interface (or boundary) between the silicon-containing substrate and the oxide film (SiO2 film) to be foomed thereon. [0170] Further, by use of another embodiment of the process for producing an electronic device according to the present invention, an underlying oxide film (SiO2 film) is subjected to surface-nitriding by using a so-called SPA antenna, to thereby form a high-quality oxynitride film (SiON film). [0171] Further, when a gate electrode (for example, gate electrode comprising polysilicon or amorphous-silicon or SiGe) is formed on the thus formed high-quality oxide film and/or oxynitride film, whereby an semiconductor structure (for example, MOS-type semiconductor structure) having a good electric characteristic can be formed, Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5254503 *Jun 2, 1992Oct 19, 1993International Business Machines CorporationProcess of making and using micro maskUS6214681 *Jan 26, 2000Apr 10, 2001Advanced Micro Devices, Inc.Process for forming polysilicon/germanium thin films without germanium outgassingUS6255731 *Jul 28, 1998Jul 3, 2001Canon Kabushiki KaishaSOI bonding structureUS6383299 *May 21, 1998May 7, 2002Nec CorporationSilicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide filmUS6399520 *Mar 9, 2000Jun 4, 2002Tokyo Electron LimitedSemiconductor manufacturing method and 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H01L21/28E2C2N, H01L21/02K2E2B2B2, H01L21/28E2C2D, H01L21/02K2C1L5, C23C8/34, C23C8/36, H01L21/314B1, H01L21/316C2B2, C23C8/02, C23C16/455K2RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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