text:
DaleRojo comments on Thank you ArenaNet for not overpricing such awesome feature.jump to contentmy subredditsannouncementsArtAskRedditaskscienceawwblogbookscreepydataisbeautifulDIYDocumentariesEarthPornexplainlikeimfiveFitnessfoodfunnyFuturologygadgetsgamingGetMotivatedgifshistoryIAmAInternetIsBeautifulJokesLifeProTipslistentothismildlyinterestingmoviesMusicnewsnosleepnottheonionOldSchoolCoolpersonalfinancephilosophyphotoshopbattlespicsscienceShowerthoughtsspacesportstelevisiontifutodayilearnedTwoXChromosomesUpliftingNewsvideosworldnewsWritingPromptsedit subscriptionsfront-all-random | nosleep-Fitness-Jokes-television-tifu-gadgets-explainlikeimfive-mildlyinteresting-personalfinance-IAmA-OldSchoolCool-space-todayilearned-creepy-LifeProTips-books-funny-videos-aww-WritingPrompts-food-AskReddit-philosophy-UpliftingNews-sports-DIY-nottheonion-gaming-GetMotivated-listentothis-photoshopbattles-Music-history-Art-Documentaries-movies-pics-gifs-askscience-Showerthoughts-science-InternetIsBeautiful-TwoXChromosomes-Futurology-worldnews-dataisbeautiful-EarthPorn-newsmore » Guildwars2commentsrelatedwant to join? sign in or create an account in seconds|Englishlimit my search to /r/Guildwars2use the following search parameters to narrow your results:subreddit:subredditfind submissions in "subreddit"author:usernamefind submissions by "username"site:example.comfind submissions from "example.com"url:textsearch for "text" in urlselftext:textsearch for "text" in self post contentsself:yes (or self:no)include (or exclude) self postsnsfw:yes (or nsfw:no)include (or exclude) results marked as NSFWe.g. subreddit:aww site:imgur.com dogsee the search faq for details.advanced search: by author, subreddit...this post was submitted on 27 Nov 2012505 points (86% upvoted)shortlink: remember mereset passwordloginSubmit a new linkSubmit new contentGuildwars2subscribeunsubscribe102,737 readers1,310 users here now
created by Attunementa community for 5 yearsmessage the moderatorsMODERATORSAttunementSkuldTravUK/r/karmainitiativeAutoModeratorabout moderation team »504505506Thank you ArenaNet for not overpricing such awesome feature. (self.Guildwars2)submitted 2 years ago by Xangeon253 commentssharecancelsorry, this has been archived and can no longer be voted onloading...sorted by: bestbesttopnewhotcontroversialoldrandomyou are viewing a single comment's thread.view the rest of the comments →[–]DaleRojoDaleRojo/Dcf Sumatra 0 points1 point2 points 2 years ago (5 children)sorry, this has been archived and can no longer be voted onYikes...
I hardly pay at all for online games, can't imagine paying to change the look of a toon for that much. permalinkparent[–]likely_story1 10 points11 points12 points 2 years ago (3 children)sorry, this has been archived and can no longer be voted onto be fair, the point most haters are brushing over, is that you can change your hair style / color / accessories in WoW at any time for a trivial amount of in game currency.
In guild wars 2 you can't change anything without buying the full package.
permalinkparent[–]DaleRojoDaleRojo/Dcf Sumatra 1 point2 points3 points 2 years ago (2 children)sorry, this has been archived and can no longer be voted onAh, that's not as bad as I thought it would be. Were you able to access the looks from character creation or did it depend on the location you were at?
permalinkparent[–]likely_story1 3 points4 points5 points 2 years ago (1 child)sorry, this has been archived and can no longer be voted onWoW added barber shops in the major cities where you could go in, sit down, and then play with the hair style/color/accessory until your heart is content. They would then charge you a trivial amount of gold when you hit "complete" and you'd go about your merry way.
What options were available to you depended entirely on the race you chose.
permalinkparent[–]DaleRojoDaleRojo/Dcf Sumatra 4 points5 points6 points 2 years ago (0 children)sorry, this has been archived and can no longer be voted onThat sounds really fun and immersive. I really like the idea.
permalinkparent[–]Bonefield 4 points5 points6 points 2 years ago (0 children)sorry, this has been archived and can no longer be voted onI put a lot of money into appearance changes in WoW. Faction/race changes, too. Looking back on it, I think my wife and I probably spent at least $400 on extra stuff on top of the sub fee.
...I think I'm gonna stop being stingy and go drop another $10 on gems.
permalinkparentaboutblogaboutteamsource codeadvertisejobshelpwikiFAQreddiquetterulescontact ustoolsmobilefirefox extensionchrome extensionbuttonswidget<3reddit goldstoreredditgiftsreddit AMA appreddit.tvradio redditUse of this site constitutes acceptance of our User Agreement (updated) and Privacy Policy (updated). © 2015 reddit inc. All rights reserved.REDDIT and the ALIEN Logo are registered trademarks of reddit inc.create a new accountusername:password:verify password:email: (optional)remember mecreate accountsign inusername:password:remember mereset passwordsign inWe care about your privacy, and we never spam. By creating an account, you agree to reddit's User Agreement and Privacy Policy. We're proud of them, and you should read them.English [en]العربية [ar]Беларуская мова [be]български език [bg]Bosanski [bs]català [ca]česky [cs]dansk [da]Deutsch [de]Ελληνικά [el]English (Australia) [en-au]English (Canadian) [en-ca]English (Great Britain) [en-gb]English [en-us]Esperanto [eo]español [es]español [es-ar]eesti keel [et]Euskara [eu]فارسی [fa]suomi [fi]français [fr]Gàidhlig [gd]עברית [he]मानक हिन्दी [hi]hrvatski [hr]Magyar [hu]Հայերեն լեզու [hy]Bahasa Indonesia [id]íslenska [is] (*)italiano (Italy) [it]日本語 [ja]ಕನ್ನಡ [kn_IN]한국어 [ko]Latin [la]1337 [leet]LOL [lol]lietuvių kalba [lt]latviešu valoda [lv]Nederlands [nl]Nynorsk [nn]Norsk [no]Arrrrrrrr! [pir]polski [pl]português [pt] (*)português [pt-pt]português brasileiro [pt_BR]română [ro]русский [ru]slovenčina [sk]slovenščina [sl]српски језик [sr]Srpski [sr-la]Svenska [sv]தமிழ் [ta]ภาษาไทย [th]Türkçe [tr]українська мова [uk]Tiếng Việt [vi]中文 [zh] (*) incomplete volunteer to translateπ Rendered by PID 23595 on app-61 at 2015-01-26 00:56:27.891452+00:00 running dea44aa country code: US.


text:
Science PACE 1010, Grade 1, 4th Edition - Christianbook.com
Science PACE 1010, Grade 1, 4th Edition
CBD Stock No: WW6013460
$33.79 Score Key Set Grade 1 Science SCORE Keys 1001-1012 (4th Edition)
$33.79 1001 Science PACE 1001, Grade 1, 4th Edition
Science PACE 1012, Grade 1, 4th Edition
$2.90 4th Edition Social Studies PACE 1010
$2.90 Science PACE 1011, Grade 1, 4th Edition
$2.90 Science PACE 1009, Grade 1, 4th Edition
$2.70 4th Edition Social Studies PACE 1011
$2.90 4th Edition Social Studies PACE 1012
$2.90 English PACE 1011, Grade 1
$2.70 4th Edition Social Studies PACE 1009
$2.90 English PACE 1009, Grade 1
$2.70 Science PACE 1008, Grade 1, 4th Edition
$2.90 4th Edition Social Studies PACE 1008
$2.90 Math PACE 1010, Grade 1
Students will learn about the natural world as well as scientific properties & principles in ACE's Science curriculum. School of Tomorrow's Grade 1 Science workbooks focus on earth and space science. PACE 1010 covers learning new words; reading stories; answering questions; eyes; and perspective. Fill-in-the-blank and multiple-choice exercises help with review and retention. Full-color pictures. 4th Edition. 27 pages, paperback booklet. 1st Grade. PACE 1010. Answers are in the sold-separately PACE SCORE Key booklet. Accelerated Christian Education (ACE) curriculum has Scripture as its foundation, fully integrating biblical principles, wisdom, and character-building concepts into education. Students move at their own speed through the self-instructional "PACE" workbooks. Following the mastery approach, PACEs are formatted for students to complete the exercises found throughout the workbook, take a practice "self test," and conclude with a "final test" (removed from the center) to measure understanding.
Add To Wishlist Science PACE 1012, Grade 1, 4th Edition
Availability: In Stock CBD Stock No: WW6409012 Video Add To Cart
Availability: In Stock CBD Stock No: WW6013413 Video Add To Cart
Add To Wishlist Science PACE 1011, Grade 1, 4th Edition
Availability: In Stock CBD Stock No: WW6013461 Video Add To Cart
Add To Wishlist Science PACE 1009, Grade 1, 4th Edition
Availability: In Stock CBD Stock No: WW6409009 Video Related Products
I'm the author/artist and I want to review Science PACE 1010, Grade 1, 4th Edition. Start A New Search

type: global

value:
This website is a Christian catalog and internet retailer.
Christian Book Distributors was started in 1978 by Stephen Hendrickson, 19 years old and a sophomore at Central Bible College in Springfield, Missouri, out of his parents’ home in Lynn, Massachusetts.


text:
How to find dictionary duplicate values in C# - CodeProject ×
C#.NETASP.NETDictionary
27.8K views5 bookmarked
Sk. Saiful Alam, 29 Dec 2013
4.05/5 - 11 votes1 removedμ 3.88, σa 1.46 [?]
It is very simple and useful tip to find duplicate values from a dictionary.	IntroductionIn this tip I will show you how to find dictionary duplicate values in C#. An expert you know this is very simple code, but nonetheless it is a very useful tip for many beginners in C#.
Programmers like to create a dictionary for small data source to store key value type data. Keys are unique, but dictionary values may be duplicates.
Using the code Here I use a simple LINQ statement to find duplicate values from dictionary.//initialize a dictionary with keys and values.
Dictionary<int, string> plants = new Dictionary<int, string>() {
{1,"Speckled Alder"},
{2,"Apple of Sodom"},
{3,"Hairy Bittercress"},
{4,"Pennsylvania Blackberry"},
{5,"Apple of Sodom"},
{6,"Water Birch"},
{7,"Meadow Cabbage"},
{8,"Water Birch"}
Response.Write("dictionary elements........
");
//loop dictionary all elements
foreach (KeyValuePair<int, string> pair in plants)
Response.Write(pair.Key + "....."+ pair.Value+"
");
//find dictionary duplicate values.
var duplicateValues = plants.GroupBy(x => x.Value).Where(x => x.Count() > 1);
Response.Write("
dictionary duplicate values..........
");
//loop dictionary duplicate values only
foreach(var item in duplicateValues)
Response.Write(item.Key+"
");
Sk. Saiful Alam
Bangladesh I am a web developer. I develop web application using asp.net c# and coldfusion. I am a tech blogger since 2007. I published more than 3000 c# asp.net and coldfusion tutorials, examples in my blogs. I also owner and founder of many social bookmarking sites. Last 10 years i also worked on search engine optimization.
My vote of 4 Doug Domeny31-Dec-13 10:29
Doug Domeny31-Dec-13 10:29 Short, sweet and to the point. Nice tip for beginners of something that is not obvious.
Suggestion... Jason Vogel30-Dec-13 7:09
Jason Vogel30-Dec-13 7:09 It is a beginner article, everyone has to start somewhere. I disagree with a "2" for that reason alone.I think that you should have also provided a solution for retrieving only the distinct values.
var uniqueValues = myDict.GroupBy(pair => pair.Value)
.Select(group => group.First())
Re: Suggestion... Sk. Saiful Alam30-Dec-13 7:28
Sk. Saiful Alam30-Dec-13 7:28 Thanks a lot for your suggestion.
Re: Suggestion... johannesnestler9-Jan-14 4:56
johannesnestler9-Jan-14 4:56 No don't do it like this - you can just write:plants.Values.Distinct()modified 9-Jan-14 10:13am.
My vote of 2 leiyangge29-Dec-13 15:22
leiyangge29-Dec-13 15:22 really for beginners
Re: My vote of 2 Klaus Luedenscheidt29-Dec-13 19:20
Klaus Luedenscheidt29-Dec-13 19:20 formerly i vote the same for such articles. Meanwhile i came to the conclusion that it is not fair to vote low just because an article is for beginners. The article is short, precise and gives a good hint. So there is no reason (for me) to vote a 2.Best RegardsKlaus
Last Updated 29 Dec 2013	Article Copyright 2013 by Sk. Saiful AlamEverything else

value: This website is a community for computer programmers with articles on different topics and programming languages such as web development, software development, C++, Java, and other topics. Once a visitor registers a user account on the site, they can gain reputation which allows users to unlock different privileges such as the ability to store personal files in the user's account area, have live hyperlinks in their profile biography, and more.


text:
Patent US6717236 - Filling via with copper-rich copper-zinc alloy electroplated on copper ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign in<nobr>Advanced Patent Search</nobr>PatentsA method of reducing electromigration in a dual-inlaid copper interconnect line (3) by filling a via (6) with a Cu-rich Cu�Zn alloy (30) electroplated on a Cu surface (200 from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion...http://www.google.com/patents/US6717236?utm_source=gb-gplus-sharePatent US6717236 - Filling via with copper-rich copper-zinc alloy electroplated on copper surface from stable chemical solution, controlling zinc doping; improved interconnect reliability and corrosion resistanceAdvanced Patent SearchPublication numberUS6717236 B1Publication typeGrantApplication numberUS 10/084,563Publication dateApr 6, 2004Filing dateFeb 26, 2002Priority dateFeb 26, 2002Fee statusPaidPublication number084563, 10084563, US 6717236 B1, US 6717236B1, US-B1-6717236, US6717236 B1, US6717236B1InventorsSergey Lopatin, Alexander H. Nickel, Paul L. KingOriginal AssigneeAdvanced Micro Devices, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (7), Non-Patent Citations (5), Referenced by (6), Classifications (25), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetFilling via with copper-rich copper-zinc alloy electroplated on copper surface from stable chemical solution, controlling zinc doping; improved interconnect reliability and corrosion resistanceUS 6717236 B1Abstract A method of reducing electromigration in a dual-inlaid copper interconnect line (3) by filling a via (6) with a Cu-rich Cu�Zn alloy (30) electroplated on a Cu surface (200 from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a reduced-oxygen Cu�Zn alloy as fill (30) for the via (6) in forming the dual-inlaid interconnect structure (35). The alloy fill (30) is formed by electroplating the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the fill (30) on the Cu surface (20); and annealing the electroplated Cu�Zn alloy fill (30); and planarizing the Cu�Zn alloy fill (30), thereby forming the dual-inlaid copper interconnect line (35).
What is claimed: 1. A method of fabricating a semiconductor device, having a reduced-oxygen copper-zinc (Cu�Zn) alloy filled dual-inlaid interconnect structure formed on a copper (Cu) surface formed by electroplating the Cu surface in a chemical solution, comprising the steps of:
providing a semiconductor substrate having a Cu surface formed in a via; providing a chemical solution; electroplating the Cu surface in the chemical solution thereby forming said a Cu�Zn alloy fill in the via and on the Cu surface, wherein said electroplating comprises using an electroplating apparatus, wherein said electroplating apparatus comprises: (a) a cathode-wafer, (b) an anode, (c) electroplating vessel; and (d) a voltage source, and wherein the cathode-wafer comprises the Cu surface, rinsing the Cu�Zn alloy fill in a solvent; drying the Cu�Zn alloy fill under a gaseous flow; annoling the Cu�Zn alloy fill formed in the via and directly deposited on the Cu surface, thereby forming a reduced-oxygen Cu�Zn alloy fill having an alloy surface and an alloy thickness and having a uniform zinc distribution across said alloy surface and said alloy thickness; planarizing the reduced-oxygen Cu�Zn alloy fill and the Cu surface, thereby completing formation of a reduced-oxygen Cu�Zn alloy filled dual-inlaid interconnect structure; and completing formation of the semiconductor device. 2. A method, as recited in claim 1,
wherein the chemical solution is nontoxic and aqueous, and wherein the chemical solution comprises: at least one zinc (Zn) ion source for providing a plurality of Zn ions; at least one copper (Cu) ion source for providing a plurality of Cu ions; at least one complexing agent for complexing the plurality of Cu ions; at least one pH adjuster, at least out wetting agent for stabilizing the chemical solution, all being dissolved in a volume of deoinized (DI) water. 3. A method, as recited in claim 2,
wherein the at least one zinc (Zn) ion source comprises at least one zinc salt selected from a group consisting essentially of zinc acetate ((CH3CO2)2Zn), zinc bromide (ZnBr2), zinc carbonate hydroxide (ZnCO3.2Zn(OH)2), zinc dichloride (ZnCl2), zinc citrate ((O2CCH2C(OH)(CO2)CH2CO2)2Zn3 zinc iodide (ZnI2), zinc L-lactate ((CH3CH(OH)CO2)2Zn), zinc nitrate (Zn(NO3)2), zinc stearate ((CH3(CH2)16CO2)2Zn), zinc sulfate (ZnSO4), zinc sulfide (ZnS), zinc sulfite (ZnSO3), and their hydrates. 4. A method, as recited in claim 2,
wherein the at least one copper (Cu) ion source comprises at least one copper salt selected from a group consisting essentially of copper(I) acetate (CH3CO2Cu), copper(II) acetate ((CH3CO2)2Cu), copper(I) bromide (CuBr), copper(II) bromide (CuBr2), copper(II) hydroxide (Cu(OH2) copper(II) hydroxide phosphate (Cu2(OH)PO4), copper(I) iodide (CuI), copper(II) nitrate ((CuNO3)2), copper(II) sulfate (CuSO4), copper(I) sulfide (Cu2S), copper(II) sulfide (CuS), copper(II) tartrate ((CH(OH)CO2)2Cu), and their hydrates. 5. A method, as recited in claim 1,
wherein the anode comprises at least one marterial selected from a group consisting essentially of copper (Cu), a copper-platinum alloy (Cu�Pt), titanium (Ti), platinum (Pt), a titanium-platinum alloy (Ti�Pt), an anodized copper-zinc alloy (Cu�Zn, i.e., brass), a platinized titanium (Pt/Ti), and a platinized copper-zinc (Pt/Cu�Zn, i.e., platinized brass). 6. A method, as recited in claim 1,
wherein said semiconductor substrate further comprises a barrier layer formed in the via under said Cu surface, and wherein the barrier layer comprises at least one material selected from a group consisting essentially of titanium silicon nitride TixSiyNz), tantalum nitride (TaN), and tungsten nitride (WxNy). 7. A method, as recited in claim 6,
wherein said semiconductor substrate further comprises an underlayer formed on the barrier layer, wherein said underlayer comprises at least one material selected from a group consisting essentially of tin (Sn) and pallatium (Pd), end wherein said Cu surface is formed over said barrier layer and on said underlayer. 8. A method, as recited in claim 7,
wherein said underlayer comprises a thickness range of approximately 15 Å to approximately 50 Å, wherein said barrier layer comprises a thickness range of approximately 30 Å to approximately 50 Å, wherein said Cu surface comprises a thickness range of approximately 50 Å to approximately 70 Å, and wherein said Cu�Zn alloy fill comprises a thickness range of approximately 300 Å to approximately 700 Å. 9. A method, as recited in claim 1,
wherein the annealing steps are performed in a temperature range of approximately 150� C. to approximately 450� C., and wherein the annealing steps are performed for a duration range of approximately 0.5 minutes to approximately 60 minutes. 10. A semiconductor device, having a reduced-oxygen copper-zinc (Cu�Zn) alloy filled dual-inlaid interconnect structure formed on a copper(Cu) surface formed by electroplating the Cu surface in a chemical solution, fabricated by a method comprising the steps of:
providing a semiconductor substrate having a Cu surface formed in a via; providing a chemical solution; electroplating the Cu surface in the chemical solution, thereby forming a Cu�Zn alloy fill in the via and on the Cu surface; wherein said electroplating comprises using an electroplating apparatus, wherein said electroplating apparatus comprises: (a) a cathode-wafer, (b) an anode; (c) electroplating vessel; and (d) a voltage source, and wherein said cathode-wafer comprises the Cu surface, rinsing the Cu�ZN alloy fill in a solvent; drying the Cu�Zn alloy fill under a gaseous flow; annealing the Cu�Zn alloy fill formed in the via and directly deposited on the Cu surface, thereby forming a reduced-oxygen Cu�Zn alloy fill having an alloy surface and an alloy thickness and having a uniform zinc distribution across said alloy surface and said alloy thickness; planarizing the reduced-oxygen Cu�Zn alloy fill and the Cu surface, thereby completing formation of a reduced-oxygen Cu�Zn alloy filled dual-inlaid interconnect structure; and completing formation of the semiconductor device. 11. A device, as recited in claim 10,
wherein the chemical solution is nontoxic and aqueous, and wherein the chemical solution comprises: at least one zinc (Zn) ion source for providing a plurality of Zn ions; at least one copper (Cu) ion source for providing a plurality of Cu ions; at least one complexing agent for complexing the plurality of Cu ions; at least one pH adjuster; at least one wetting agent for stabilizing the chemical solution, all being dissolved in a volume of deionized (DI) water. 12. A device, as recited in claim 11,
wherein the at least one zinc (Zn) ion source comprises at least on zinc salt selected from a group consisting essentially of zinc acetate ((CH3CO2)Zn), zinc bromide (ZnBr2), zinc carbonate hydroxide (ZnCO3.2Zn(OH)2), zinc dichloride (ZnCl2) zinc citrate (O2CCH2C(OH)(CO2)CH2CO2)2Zn3), zinc iodide (ZnI2), zinc L-lactate ((CH3CH(OH)CO2)2Zn), zinc nitrate (Zn(NO3)2), zinc stearate ((CH3(CH2)16CO2)2Zn), zinc sulfate (ZnSO4), zinc sulfide (ZnS), zinc sulfite (ZnSO3) and their hydrates. 13. A device, as recited in claim 11,
wherein the at least one copper (Cu) ion source comprises at least one copper salt selected from a group consisting essentially of copper(I) acetate (CH3CO2Cu), copper(II) acetate ((CH3CO2Cu), copper(I) bromide (CuBr), copper(II) bromide (CuBr2), copper(II) hydroxide (Cu(OH)2), copper(II) hydride phosphate (Cu2(OH)PO4), copper(I) iodide (CuI), copper(II) nitrate hydrate ((CuNO3)2), copper(II) sulfate (CuSO4), copper(I) sulfide (Cu2S), copper(II) sulfide (CuS), copper(II) tartrate ((CH(OH)CO2)2Cu), and their hydrates. 14. A device, as recited in claim 10,
wherein the anode comprise at least one material selected from a group consisting essentially of copper (Cu), a copper-platinum alloy (Cu�Pt), titanium (Ti), platinum (Pt), a titanium-platinum alloy (Ti�Pt), and anodized copper-zinc alloy (Cu�Zn, i.e., brass), a platinized titanium (Pt/Ti), and a platinized copper-zinc (Pt/Cu�Zn, i.e., brass). 15. A device, as recited in claim 10,
wherein said semiconductor substrate further comprises a barrier layer formed in the via under said Cu surface, and wherein the barrier layer comprises at least one material selected from a group consisting essentially of titanium silicon nitride (TixSiyN2), tantalum nitride (TaN), and tungsten nitride (WxNy). 16. A device, as recited in claim 15,
wherein said semiconductor substrate further comprises an underlayer formed on the barrier layer, wherein said underlayer comprises at least one material selected from a group consisting essentially of tin (Sn) and palladium (Pd), and wherein said Cu surface is formed over said barrier layer and on said underlayer. 17. A device, as recited in claim 16;
wherein said underlayer comprises a thickness range of approximately 15 Å to approximately 50 Å, wherein said barrier layer comprises a thickness range of approximately 30 Å to approximately 50 Å, wherein said Cu surface comprises a thickness range of approximately 50 Å to approximately 70 Å, and wherein said Cu�Zn alloy fill comprises a thickness range of approximately 300 Å to approximately 700 Å. 18. A semiconductor device, having a first interim reduced-oxygen copper-zinc (Cu�Zn) alloy fill formed on a copper (Cu) surface and a second interim reduced-oxygen Cu�Zn alloy fill formed on a Cu-fill, both films being formed by electroplating the Cu surface and the Cu-fill, respectively, in a chemical solution, comprising:
a semiconductor substrate having a via; and an encapsulated dual-inlaid interconnect formed and disposed in said via, said interconnect structure comprising: at least one Cu surface formed in said via; a first interim reduced-oxygen Cu�Zn alloy fill formed and disposed on the at least one Cu surface; a Cu-fill formed and disposed on said interim reduced-oxygen Cu�Zn alloy fill; and a second interim reduced-oxygen Cu�Zn alloy fill formed and disposed on the Cu-fill. Description
(1) �Chemical Solution for Electroplating a Copper-Zinc Alloy Thin Film,� concurrently filed U.S. (10/081,074);
(2) �Method of Electroplating a Copper-Zinc Alloy Thin Film on a Copper Surface Using a Chemical Solution and a Semiconductor Device thereby Formed,� concurrently filed (U.S. 10/082,432);
(3) �Method of Controlling Zinc-Doping in a Copper-Zinc Alloy Thin Film Electroplated on a Copper Surface and a Semiconductor Device Thereby Formed,� concurrently filed (U.S. 10/082,433);
(4) �Method of Reducing Electromigration in a Copper Line by Electroplating an Interim Copper-Zinc Alloy Thin Film in a Copper Surface and a Semiconductor Sevice thereby Formed,� concurrently filed (U.S. 10/083,809);
(5) �Method of Reducing Electromigration in a Copper Line by Zinc-Doping of a Copper Surface from an Electroplated Copper-Zinc Alloy Thin Film and a Semiconductor Device thereby formed,� filed on Dec. 7, 2001, (U.S. 10/016,410; now issued as U.S. (6,515,368); and
(6) �Method of Reducing Electromigration by Ordering Zinc-Doping in an Electroplated Copper-Zinc Interconnect and a Semicinductor Device thereby Formed,� filed on Dec. 7, 2001, (U.S. 10/016,645).
FIELD OF THE INVETION The present invention relates to semiconductor devices and their methods of fabrication. More particularly, the present invention relates to the processing of copper interconnect material and the resultant device utilizing the same. Even more particularly, the present invention relates to reducing electromigration in copper interconnect lines by doping their surfaces with a barrier material using wet chemical methods.
However, some disadvantages of using Cu as an interconnect material include etching problems, corrosion, and diffusion into silicon.1 These problems have instigated further research into the formulation of barrier materials for preventing electromigration in both Al and Cu interconnect lines. In response to electromigration concerns relating to the fabrication of semiconductor devices particularly having aluminum copper alloy interconnect lines, the industry has been investigating the use of various barrier materials such as titanium-tungsten (TiW) and tanium nitride (TN) layers as well as refractory metals such as titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), and their silicides.2 Although the foregoing materials are adequate for Al interconnects and Al�Cu alloy interconnects, they have not been entirely effective with respect to all-Cu interconnects. Further, though CVD and PECVD have been conventionally used for depositing secondary metal(s) on a primary metal interconnect surface, neither technique provides a cost-effective method of forming a copper-zinc alloy on a Cu interconnect surface. Therefore, a need exists for a low cost and high throughput method of reducing electromigration in a dual-inlaid copper interconnect line by filling a via with a copper-zinc (Cu�Zn) alloy electroplated on a copper (Cu) surface from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance.
DISCLOSURE OF INVENTION Accordingly, the present invention provides a method of reducing electromigration in a dual-inlaid copper interconnect line by filling a via with a Cu-rich (e.g., approximately 99.8 at.% to approximately 98 at.%/o) copper-zinc (Cu�Zn) alloy electroplated on a copper (Cu) surface from a stable chemical solution, and by controlling the Zn-doping thereof (e.g., approximately 0.2 at.% to approximately 2.0 at.%), which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The present method involves filling the via by electroplating the Cu surface, such as a blanket Cu seed layer and a partial thickness plated Cu layer, in a unique nontoxic aqueous chemical electroplating solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants, thereby forming an electroplated Cu�Zn alloy fill having some degree of oxygen (O) concentration, wherein the Zn-doping is controllable by varying the electroplating conditions; and annealing the Cu�Zn alloy fill formed on the Cu surface in an environment such as vacuum, nitrogen (N2), hydrogen (H2), forming (N2H2), or mixtures thereof for reducing the O-concentration in the alloy fill, for modifying the grain structure of the Cu�Zn alloy fill as well as of the underlying Cu surface, and for forming a mixed Cu�Zn/Cu interface, thereby forming the dual-inlaid interconnect structure. The present invention further provides a particular electroplating method which controls the parameters of Zn concentration, pH, temperature, and time in order to form a uniform reduced-oxygen copper-zinc (Cu�Zn) alloy fill on a cathode-wafer surface such as a copper (Cu) surface for reducing electromigration in the device by deceasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate.
More specifically, the present invention provides a method of fabricating a semiconductor device, having a reduced-oxygen copper-zinc (Cu�Zn) alloy fill formed on a copper (Cu) surface by electroplating the Cu surface in a chemical solution, generally comprising the steps of: providing a semiconductor substrate having a Cu surface (e.g., seed layer), the Cu surface having been formed by CVD, PVD, PECVD, ALD, or electroplating, an optional barrier layer, and an optional underlayer formed in a via; providing a chemical solution; immersing the Cu surface in the chemical solution, thereby forming a Cu�Zn alloy fill on the Cu surface in the via; rinsing the Cu�Zn alloy fill in a solvent; drying the Cu�Zn alloy fill under a gaseous flow; annealing the Cu�Zn alloy fill formed on the Cu surface, thereby forming a reduced-oxygen Cu�Zn alloy fill; planarizing the reduced-oxygen Cu�Zn alloy fill, the Cu surface, the optional barrier layer, and the optional underlayer, thereby forming a Cu�Zn alloy dual-inlaid interconnect structure; and completing formation of the semiconductor device.
By electroplating this Cu�Zn alloy fill in the via and on the cathode-wafer surface, such as a Cu surface, using a stable chemical solution in the prescribed concentration ranges and subsequently annealing the Cu�Zn alloy fill electroplated on the Cu surface, the present invention improves Cu interconnect reliability, enhances electromigration resistance, improves corrosion resistance, and reduces manufacturing costs. In particular, the present invention chemical solution is advantageous in that it facilitates formation of an acceptable Cu�Zn alloy fill over a wide range of bath compositions while the subsequent annealing step removes undesirable oxygen impurities from the formed alloy fill. The desirable Zn concentration in the Cu�Zn alloy fill, preferably in a range of approximately 0.2 at% to approximately 2.0 at% determined by X-Ray Photoelectron Spectroscopy (XPS) or Auger Electron Spectroscopy (AES), is controllable by varying the electroplating conditions and/or the bath composition. By so controlling the Zn-doping, the present method balances high electromigration performance against low resistively requirements. Additionally, the Cu surface (e.g., seed layer), being formed by a technique such as electroless deposition, ion metal plasma (IMT), self-ionized plasma (SIP), hollow cathode magnetron (HCM), chemical vapor deposition (CVD), and atomic layer deposition (ALD), is enhanced by the Cu�Zn alloy fill layer and is prevented from etching by the high pH value (i.e., basic) of the chemical solution from which the alloy fill layer is formed.
Further advantages arise from the present invention's superior fill-characteristics. The present Cu�Zn electroplating solution facilitates better filling of the via on an interconnect, especially for feature sizes in a dimensional range of approximately 0.2 μm to approximately 0.05 μm, thereby lowering the resistance of the formed Cu�Zn alloy fill (e.g., in a resistance range of approximately 2.2 μΩ�cm to approximately 2.5 μΩ�cm for approximately 1 at.% Zn content in a Cu�Zn alloy fill, as deposited). Further, the filling capability is enhanced by three beneficial characteristics of the present invention: (1) the instant chemical solution does not etch copper or a copper alloy seed layer; (2) the introduction of Zn into the alloy fill as well as onto the Cu interconnect improves both step coverage and nucleation; and (3) a variety of organic additives, such as polyethylene glycol (PEG), organo-disulfides, and organo-chlorides, are compatible and may be included in the instant chemical solution for further enhancing the fill profile and grain structure. The present Cu�Zn electroplating solution provides a desirably low Zn content in a Cu alloy interconnect (e.g., in a concentration range of approximately 0.2 at.% to approximately 1.0 at%) which also imparts (1) a de minimis increase in resistance as well as (2) a maximum improvement in electromigration resistance. The present chemical solution can also provide a desirably low Zn content (e.g., in a range of <<approximately 0.1 at.% or <<approximately 0.2 at %, virtually undetectable by AES) in a Cu film, wherein the Zn content may be engineered by varying the deposition parameters as well as by modifying the bath composition.
(1) FIG. 1 is a crossectional view of a Cu interconnect line formed on a semiconductor substrate and acting as the bottom portion of a via, the via sidewalls comprising at least one low dielectric constant layer, the via having an optional barrier layer formed therein, an optional underlayer formed on the optional barrier layer, and a Cu surface (e.g., a seed layer) formed on the optional underlayer, and a Cu�Zn alloy fill formed and annealed on the Cu surface, in accordance with the present invention.
(2) FIG. 2 is a cross-sectional view of the features shown in FIG. 1, further having a Cu�Zn alloy fill formed and annealed in the via and on the Cu-surface, in accordance with the present invention.
(3) FIG. 3 is a cross-sectional view of the features shown in FIG. 2, further having been planarized to form a Cu�Zn alloy fill dual-inlaid interconnect structure, in accordance with the first embodiment of the present invention.
(4) FIG. 4 is a cross-sectional view of the features shown in FIG. 3, wherein the Cu�Zn alloy fill dual-inlaid interconnect structure also comprises a mixed layer, and wherein the mixed layer comprises the optional underlayer, the Cu surface, and the Cu�Zn�Sn�Pd alloy layer, in accordance with the present invention.
(5) FIG. 5 is a flowchart of a method for synthesizing a unique nontoxic aqueous Cu�Zn electroplating (chemical) solution, in accordance with the present invention.
(6) FIG. 6 is a flowchart of a method for forming a Cu�Zn alloy fill on a Cu surface, in accordance with the present invention.
(7) FIG. 7 is a perspective view of an electroplating apparatus using the unique nontoxic aqueous Cu�Zn chemical solution, in accordance with the present invention.
MODES FOR CARRYING OUT THE INVENTION FIG. 1 illustrates, by example only, in cross-section, a Cu interconnect line 3 formed on a semiconductor substrate 4 and acting as the bottom portion of a via 6, the via 6 sidewalls comprising at least one low dielectric constant layer 8, in a dielectric constant range of approximately 1.6 to approximately 2.3, the via 6 having an optional barrier layer 10 formed by a technique such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), comprising at least one material selected from a group consisting essentially of titanium silicon nitride (TixSiyN2), tantalum nitride (TaN), and tungsten nitride (WxNy) in a thickness range of approximately 30 Å to approximately 50 Å, formed therein, an optional underlayer 19, comprising at least one material selected from a group consisting essentially of tin (Sn) and palladium Ed) and having a thickness of range of approximately 15 Å to approximately 50 Å(preferably approximately 30 Å), formed on the optional barrier layer 10, and a Cu surface 20 (e.g., an electroless seed layer) in a thickness range of approximately 50 Å approximately 70 Å, formed on the optional underlayer 19, in accordance with the present invention.
FIG. 2 illustrates, in cross-section, the features as shown in FIG. 1, further having a Cu�Zn alloy fill 30 in a thickness range of approximately 0.3 μm to approximately 0.7 μm, the alloy fill 30 having a Zn-content in a range of approximately 0.2 at.% to approximately 2 at.% (preferably approximately 0.5 at.%), and the alloy fill 30 being formed and annealed, at a temperature range of approximately 150� C. to approximately 350� C., in the via 6 and on the Cu-surface 20, thereby extending the Cu�Zn alloy fill 30 through the Cu surface 20 via Zn-diffiusion, thereby intermixing the alloy fill 30 with Sn and/or Pd from the optional underlayer 19, and thereby forming very strong interfaces, especially with the optional barrier layer 10, in accordance with the present invention. These very strong interfacial layers are formed in the following configuration: Cu�Zn alloy layer in bulk comprising alloy fill 30; a Cu�Zn�Sn�Pd alloy layer 29 in a thickness range of approximately 50 Å to approximately 100 Å; and the optional barrier layer 10 in a thickness range of approximately 30 Å to approximately 50 Å.
FIG. 3 illustrates, in cross-section, the features as shown in FIG. 2, further having been planarized, by a technique such as chemical mechanical polishing (CMP) or electropolishing, thereby removing sufficient conductive material from the surface to form a Cu�Zn alloy fill dual-inlaid interconnect structure 35, in accordance with the present invention.
FIG. 4 illustrates, in cross-section, the features as shown in FIG. 3, wherein the Cu�Zn alloy fill dual-inlaid interconnect structure 35 also comprises a mixed layer 29′, and wherein the mixed layer 29′ comprises the optional underlayer 19, the Cu surface 20, and the Cu�Zn�Sn�Pd alloy layer 29, in accordance with the present invention.
FIG. 5 flowcharts, by example only, a method M1 for synthesizing a liter of a unique nontoxic aqueous Cu�Zn electroplating (chemical) solution, in accordance with the present invention:
(1) cleaning a mixing vessel (e.g. a beaker) with dilute nitric acid (HN0 3) for approximately 5 minutes, as indicated by block 1001;
(2) rinsing the mixing vessel in deionized (DI) water for approximately 5 minutes to approximately 10 minutes and subsequently dying the mixing vessel for instance, under a gaseous nitrogen (GN2) flow, as indicated by block 1002;
In addition, the present invention chemical solution may be formulated as follows: wherein the at least one zinc (Zn) ion source comprises at least one zinc salt selected from a group consisting essentially of zinc acetate ((CH3CO2)2Zn), zinc bromide (ZnBr2), zinc carbonate hydroxide (ZnCO3�2Zn(OH)2), zinc dichloride (ZnCI2), zinc citrate ((O2CCH2C(OH)CO2)CH2CO2)2Zn3), zinc iodide (ZnI2), zinc L-lactate ((CH3CH(OH)CO2)2Zn), zinc nitrate (Zn(NO3)2), zinc stearate ((CH3(CH2)16CO2)2Zn), zinc sulfate (ZnSO4), zinc sulfide (ZnS), zinc sulfite (ZnSO3), and their hydrates (preferably zinc chloride or zinc dichloride and zinc citrate), wherein the optional at least one complexing agent for complexing the plurality of Zn ions comprises tartric acid (HO2CCH(OH)CH(OH)CO2H), wherein the tartaric acid prevents precipitation of the plurality of Zn ions from the chemical solution, wherein the at least one copper (Cu) ion source comprises at least one copper salt selected from a group consisting essentially of copper(I) acetate (CH3CO2Cu), copper(II) acetate (CH3CO2Cu), copper(I) bromide (CUBr), copper(II) bromide (CuBr2), copper (II) hydroxide (CU(OH)2), copper(II) hydroxide phosphate (Cu2(OH)PO4), copper(I) iodide (CuI), copper(II) nitrate hydrate ((CuNO3)2), copper(II) sulfate (CuSO4), copper(I) sulfide (Cu2S), copper(II) sulfide (CuS), copper(II) tartrate ((CH(OH)CO2)2Cu), and their hydrates (preferably copper sulfate), wherein the at least one complexing agent for the plurality of Cu ions comprises at least one species selected from a group consisting essentially of ethylene diamine �EDA� (H2NCH2CH2NH2) and ethylenediaminetetraacetic acid �EDTA� ((HO2CCH2)2NCH2CH2N (CH2CO2H)2), wherein the EDTA prevents precipitation of the plurality of Cu ions from the chemical solution, wherein the at least one pH adjuster comprises at least one pH-adjusting compound selected from a group consisting essentially of ammonium hydroxide (NH4OH) and tetranethylammonium hydroxide �TMAH� ((CH3)4NOH), wherein the at least one wetting agent comprises a surfactant, and wherein the surfactant comprises at least one surfactant selected from a group consisting essentially of RE-610� and polyethylene glycol (PEG).
Also, the preferred embodiment involves the following process parameters ranges: wherein the at least one pH adjuster adjusts the chemical solution to a pH range of approximately 7 to approximately 14 (preferably in a pH range of approximately 10 to approximately 12), wherein the chemical solution may be maintained in a temperature range of approximately 16� C. to approximately 35� C. (preferably at a temperature of approximately 24� C.), wherein the Cu surface 20 is electroplated for a duration in a range of approximately 30 seconds to approximately 120 seconds (preferably for a duration of approximately 60 sec), wherein the Cu�Zn alloy fill 30 is formed having a thickness in a range of approximately 10 mn (100 Å) to approximately 200 nm (2000 Å) (preferably having a thickness of approximately 30 nm), and wherein the formed Cu-rich Cu�Zn alloy fill 30 has a low Zn content of approximately 10 at.% and a high Cu content of approximately 90 at.% (preferably approximately 0.2 at.% to approximately 2.0 at.% Zn and preferably approximately 98 at% to approximately 99.8 at.% Cu).
FIG. 6 flowcharts, by example only, a method M2 of fabricating a semiconductor device, having a reduced-oxygen copper-zinc (Cu�Zn) alloy fill 30 formed on a copper (Cu) surface 20, the Cu surface 20 having been formed by CVD, PVD, PECVD, electroless plating, or electroplating, the alloy fill 30 formed by electroplating the Cu surface 20 in a chemical solution, initially comprising the steps of: providing a semiconductor substrate 4 having a Cu surface 20, an optional barrier layer 10, and an optional underlayer 19 formed in a via 6, as indicated by block 2001; providing a chemical solution, the chemical solution comprising: at least one zinc (Zn) ion source for providing a plurality of Zn ions; at least one copper (Cu) ion source for providing a plurality of Cu ions; at least one complexing agent for complexing the plurality of Cu ions; at least one pH adjuster, at least one wetting agent for stabilizing the chemical solution, all being dissolved in a volume of deionized (DI) water, as shown by block 2002; electroplating the Cu surface 20 in the chemical solution, thereby forming a Cu�Zn alloy fill 30 in the via 6 and on the Cu surface 20, as indicated by block 2003; rinsing the Cu�Zn alloy fill 30 in a solvent, as indicated by block 2004; drying the Cu�Zn alloy fill 30 under a gaseous flow, for instance, under a gaseous nitrogen flow (GN2), as indicated by block 2005; annealing the Cu�Zn alloy fill 30 formed in the via 6 and on the Cu surface 20 in a temperature range such as 150� C. to 450� C. (preferably in a temperature of approximately 150� C. to approximately 350� C.), wherein the annealing step is performed for a duration range of approximately 0.5 minutes to approximately 60 minutes, thereby reducing the oxygen impurity concentration to a level less than that which is detectable (i.e.,�0.1 at.%) in the alloy thin film 30, thereby modifying the grain structure by increasing the grain size of both the alloy fill layer 30 as well as the Cu surface 20, and thereby forming a mixed interface comprising the Cu�Zn�Sn�Pd alloy layer 29, thereby forming a reduced-oxygen Cu�Zn alloy having a uniform zinc distribution, as indicated by block 2006; planarizing, by a technique such as chemical mechanical polishing (CMP), the reduced-oxygen Cu�Zn alloy fill 30, the Cu surface 20, the optional barrier layer 10, and the optional underlayer 19, thereby completing formation of a Cu�Zn filled dual-inlaid interconnect structure 35, as indicated by block 2007; and completing formation of the semiconductor device, as indicated by block 2008. The annealing step also facilitates doping of the interfaces of the Cu�Zn alloy fill 30 with desirable Sn and Pd impurities from the optional underlayer 19 which structurally stabilizes the film layers 29, 30 by internally increasing its bond strengths. The chemical solution may further comprise at least one complexing agent for complexing the plurality of Zn ions also being dissolved in the volume of DI water.
FIG. 7 illustrates, in perspective view, an electroplating apparatus using the unique nontoxic aqueous Cu�Zn chemical solution, in accordance with the present invention. In particular, the electroplating step (3) of FIG. 3 may be performed in this electroplating apparatus comprising: (a) a cathode-wafer 21; (b) an anode 22; (c) an electroplating vessel 23 such as a beaker, and (d) a voltage source 24. The cathode-wafer 21 may comprise a Cu surface 20. The anode 22 may comprise at least one material selected from a group consisting essentially of copper (Cu), a copper-platinum alloy (Cu�Pt), titanium (Ti), platinum (Pt), a titanium-platinum alloy (Ti�Pt), anodized copper-zinc alloy (Cu�Zn, i.e., brass), and platinized titanium (Pt/Ti), and platinized copper-zinc (Pt/Cu�Zn, i.e., platinized brass). The brass alloy may be anodized to form a thin oxide film in situ using the chemical solution 99 prior to electroplating the cathode-wafer 21. The anodized brass anode also provides the following benefits: (1) a uniform current density distribution on the cathode-wafer; (2) a uniform Cu�Zn alloy fill formation, (3) a uniform Zn distribution across the Cu�Zn alloy fill surface, and (4) a uniform Zn distribution across the Cu�Zn alloy fill thickness. The present invention electroplating method also comprises direct voltage in the range of approximately 1 V to approximately 4 V (preferably in a voltage range of approximately 1 V to approximately 2 V); and a direct current in the range of approximately 0.01 A to approximately 0.2 A (preferably in a current range of approximately 0.1 A to approximately 0.15 A). Differential pulse conditions selected from a group consisting essentially of forward pulses, reverse pulses, combinations of forward and reverse pulses, combinations of direct current, and combinations of direct voltage may also be applied.
Further, the Zn-doping in the resultant Cu�Zn alloy fill 30 may be controlled in the present invention by varying electroplating conditions. For example, increasing the at least one zinc (Zn) ion source concentration slowly increases Zn-doping, increasing the at least one copper (Cu) ion source concentration slowly decreases Zn-doping, increasing the solution flow rate increases Zn-doping, increasing the pH decreases cathodic efficiency with respect to Zn and thereby decreases Zn-doping, increasing the electroplating duration slowly decreases Zn-doping, using a Cu anode decreases Zn-doping, using a brass anode increases Zn-doping, increasing the voltage increases the Zn-doping, and increasing the current increases the Zn-doping.
INDUSTRIAL APPLICABILITY The present invention relates to the semiconductor device fabrication industry. More particularly, the present invention relates to reducing electromigration in copper interconnect lines by doping their surfaces with a barrier material using wet chemical methods. Specifically, the present invention provides a method of fabricating a semiconductor device, having a reduced-oxygen copper-zinc (Cu�Zn) alloy fill formed on a copper (Cu) surface by electroplating the Cu surface in a chemical solution, generally comprising the steps of providing a semiconductor substrate having a Cu surface (e.g., seed layer), the Cu surface having been formed by CVD, PVD, PECVD, ALD, or electroplating, an optional barrier layer, and an optional underlayer formed in a via; providing a chemical solution; inmmersing the Cu surface in the chemical solution, thereby forming a Cu�Zn alloy fill on the Cu surface in the via; rinsing the Cu�Zn alloy fill in a solvent; drying the Cu�Zn alloy fill under a gaseous flow; annealing the Cu�Zn alloy fill formed on the Cu surface, thereby forming a reduced-oxygen Cu�Zn alloy fill; planarizing the reduced-oxygen Cu�Zn alloy fill, the Cu surface, the optional barrier layer, and the optional underlayer, thereby forming a Cu�Zn alloy dual-inlaid interconnect structure; and completing formation of the semiconductor device.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS6022808Mar 16, 1998Feb 8, 2000Advanced Micro Devices, Inc.Filling hole with copper containing dope; annealing to diffuse dopeUS6197181Mar 20, 1998Mar 6, 2001Semitool, Inc.Apparatus and method for electrolytically depositing a metal on a microelectronic workpieceUS6313064 *Jun 25, 1999Nov 6, 2001Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Alloy having antibacterial effect and sterilizing effectUS6486533 *Nov 21, 2001Nov 26, 2002Semitool, Inc.Metallization structures for microelectronic applications and process for forming the structuresUS6515368 *Dec 7, 2001Feb 4, 2003Advanced Micro Devices, Inc.Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copperUS20020008034 *Dec 7, 2000Jan 24, 2002Chen LinlinApparatus and method for electrochemically depositing metal on a semiconductor workpieceUS20020084529 *Dec 28, 2000Jul 4, 2002Dubin Valery M.Interconnect structures and a method of electroless introduction of interconnect structures* Cited by examinerNon-Patent CitationsReference1A. Krishnamoorthy, D. Duquette and S. Murarka, "Electrochemical Codeposition and Electrical Characterization of a Copper-Zinc Alloy Metallization", in edited by Adricacos, et al., Electrochem Society Symposium Proceedings, vol. 99-9, May 3-6, Seattle, p. 212.2J. Cunningham, "Using Electrochemistry to Improve Copper Interconnect", in Semiconductor International, Spring 2000 (May).3L. Chen and T. Ritzdorf, "ECD Seed Layer for Inlaid Copper Metallization" in edited by Andricacos, et al., Electrochem Society Proceedings, vol. 99-9, May 3-6, Seattle, p. 122.4Peter Van Zant, "Microchip Fabrication: A Practical Guide to Semiconductor Processing", 3<rd >Ed., p. 392 and 397 (1997).5Peter Van Zant, "Microchip Fabrication: A Practical Guide to Semiconductor Processing", 3rd Ed., p. 392 and 397 (1997).Referenced byCiting PatentFiling datePublication dateApplicantTitleUS6936925 *Jul 23, 2003Aug 30, 2005Advanced Micro Devices, Inc.decreasing the drift velocityUS6979642 *Jul 28, 2003Dec 27, 2005Advanced Micro Devices, Inc.Method of self-annealing conductive lines that separates grain size effects from alloy mobilityUS7989338 *Jun 15, 2005Aug 2, 2011Globalfoundries Singapore Pte. Ltd.Grain boundary blocking for stress migration and electromigration improvement in CU interconnectsUS8101060 *Jan 14, 2010Jan 24, 2012Round Rock Research, LlcMethods and apparatuses for electrochemical-mechanical polishingUS8525339 *Jul 27, 2011Sep 3, 2013International Business Machines CorporationHybrid copper interconnect structure and method of fabricating sameUS20130026635 *Jul 27, 2011Jan 31, 2013International Business Machines CorporationHybrid Copper Interconnect Structure and Method of Fabricating Same* Cited by examinerClassifications U.S. Classification257/586, 257/E21.175, 257/750, 438/687, 438/677, 257/E21.585, 257/758, 438/643, 257/762, 438/652International ClassificationH01L21/288, H01L21/4763, H01L27/082, H01L27/102, C25D3/58, H01L21/768, C25D7/12Cooperative ClassificationC25D7/12, C25D3/58, H01L21/76877, H01L21/2885European ClassificationC25D7/12, C25D3/58, H01L21/768C4, H01L21/288ELegal EventsDateCodeEventDescriptionSep 7, 2011FPAYFee paymentYear of fee payment: 8Aug 18, 2009ASAssignmentOwner name: GLOBALFOUNDRIES INC., CAYMAN ISLANDSFree format text: AFFIRMATION OF PATENT ASSIGNMENT;ASSIGNOR:ADVANCED MICRO DEVICES, INC.;REEL/FRAME:023119/0083Effective date: 20090630Sep 14, 2007FPAYFee paymentYear of fee payment: 4Feb 26, 2002ASAssignmentOwner name: ADVANCED MICRO DEVICES, INC., CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LOPATIN, SERGEY;NICKEL, ALEXANDER H.;KING, PAUL L.;REEL/FRAME:012656/0900Effective date: 20020212Owner name: ADVANCED MICRO DEVICES, INC. P.O. BOX 3453 ONE AMDFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LOPATIN, SERGEY /AR;REEL/FRAME:012656/0900RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

value: This website is a search engine provided by Google. Handling over 3.5 billion searches per day, it has a 92% share of the global search engine market.


text:
Ministerial restraint urged as report says assessment and target culture hindering students' learning | Education | The Guardian
Ministers urged to 'back off'
An important new study says students in colleges are 'achieving more but learning less'
Further education has undergone more turbulence and change than any other sector in the education system, and now questions are being asked about the impact this has had on students.
A research project set up eight years ago, which has so far spent £15m looking at all aspects of education and training for school leavers and adults, concludes that an obsession with assessment and meeting goals and targets is "misconceived and damaging", and leads to students "achieving more but learning less".
Teachers and tutors should be given more scope to use their professional judgment to decide "what works", more freedom to innovate, and room to take the risks that encourage creativity, it recommends.
The Teaching and Learning Research Programme (TLRP) began in 2000 with the aim of studying every aspect of education and training in the UK. It set out to collect the evidence to inform politicians and policy-makers when making reforms, and has just released its findings.
A damning verdict on the state of further education in colleges is presented in one of the programme's research projects, led by Professor Kathryn Ecclestone of Oxford Brookes University.
Her team reports: "An emphasis on target setting and achievement, regulated through outcome-based assessment and qualification systems, has led to an impoverished curriculum for the majority of school leavers and adults."
The research finds there are too many government and non-governmental agencies and intermediaries, which create unacceptable burdens of bureaucracy for further education staff and managers. It says there is a need to trust teachers and lecturers in making professional judgments.
Professor Andrew Pollard of the Institute of Education, University of London, who leads the overall research effort, believes that it is now time for government to "back off a little and loosen control so their requirements become more enabling rather than constraining".
He says: "Successive governments have found it hard to know exactly what to do with further education. Is it to be purely for the economy or is it supposed to be more educational? This is the dilemma.
"There has been a massive investment in FE but it has also been a very controlled sector. People working in the sector, the lecturers, practitioners and tutors, have felt quite uncertain about their roles and feel they are not being supported by a well-meaning government."
The TLRP says further education is prone to constant turbulence in policy-making and changes of direction without any rigorous evidence to justify such changes.
Some potentially good ideas, such as the setting up of Centres of Vocational Excellence (CoVEs) were rushed and ill-thought-through: "It was surely never the aim, when creating CoVEs, to disempower local employers, or practitioners in colleges and other providing organisations."
The government spent £100m on establishing 400 CoVEs by 2006, and the initiative is now being replaced by a new quality mark for accrediting how well colleges and private training firms respond to employers and the quality of their training.
The TLRP states: "Far from being evidence-based, CoVEs were just one of the changes introduced into the sector at a time when there was confusion of purpose ... and were not rigorously evaluated."
Researchers also reveal: "Partly because colleges have traditionally been welcoming to second-chance students who have experienced little educational success and have a vocational emphasis, FE has traditionally had lower status than other sectors. This has left it open to more extreme forms of managerialism."
Pollard says the research carried out by the TLRP "wholeheartedly supports" a movement towards more self-regulation for colleges and the investment in more trust in teachers. "This will make it possible for teachers to respond to the particular needs of learners and we are suggesting that there will be better outcomes as a result."
Frank Coffield, a professor at the Institute of Education, agrees. "Staff in colleges speak about responding to the needs of Ofsted, the Learning and Skills Council, or awarding bodies, rather than responding to the needs of students," he says. "There is no doubt that this needs to change."
• This article was amended on Tuesday 27 January 2009. A quality mark, rather than a kitemark, is being used to accredit colleges and private training firms. Kitemark is a registered trademark for products and services approved by the British Standards Institution. This has been corrected.

value: This website is a British news and media website owned by the Guardian Media Group. It contains nearly all of the content of the newspapers The Guardian and The Observer, as well as a substantial body of web-only work produced by its own staff, including a rolling news service.


text:
Sierra Bullets | eBay Please enable JavaScript Our new search experience requires JavaScript to be enabled. Please enable JavaScript on your browser, then try again.
Related: reloading bullets reloading brass hornady bullets speer bullets rcbs reloading equipment reloading press 243 winchester reloading equipment reloading dies
results for Sierra Bullets
Follow Sierra Bullets to get e-mail alerts and updates on your eBay Feed.
Unfollow Sierra Bullets to stop getting updates on your eBay Feed.
Yay! You're now following Sierra Bullets in your eBay Feed.Email me new items that match this interest
Sierra Bullets: Items in search results
Sierra Bullets Reloading Manual Second Edition 700 Pages Rifle/Pistol Data
Bullet Swaging Bullet Jackets Sierra .22/.705" 500 ct.
Newly ListedVintage Empty Ammo Boxes-Hi Point 20G Shells,Ultramax 50,Sierra Bullets .30 Cal
Vintage Sierra Bullet / Advertising Board
Sierra Bullet Chart-Mat----- Counter Display ---- With Wall Poster
Vintage 60s SIERRA BULLETS Manual Catalog w/ Original Envelope Pricing List
Sierra Bullet Chart-Mat----- Counter Display ---- New WorldWide Shipping
Sierra Bullets Green Hunting Sticker Tactical Rifle Bullet Shooting Decal
25 BULLET LUG NUTS CHROME BULGE ACORN 14x1.5 CHEVROLET GMC (Fits: Sierra 1500)
Sierra Bullets Small Reverse Hunting Sticker Tactical Rifle Shooting Decal
Sierra Bullets Large Reverse Hunting Sticker Tactical Rifle Shooting Decal
VINTAGE Sierra Advertising Bullet Board, Nice Wood -Great Display!
Sierra Bullets Wimbledon Cup Vacaville CA Winner Ad
Sierra 3rd Edition Handgun Reloading Manuals ~ Bullets~ Balllistics ~ Data
Sierra Bullets Gold Medal & Wimbledon Cup Winners 1970 print Ad advertisement
Sierra Bullets Wimbledon Cup Shooting Match Winners 1970 print Ad advertisement
Bull Accessories 1001 Bullet In-Bed Tie Down Anchor Chevy/GMC (Set of 6) (Fits: More than one vehicle)
1970 Sierra Bullets Wimbledon Winners for 14 Years Print Ad
1969 Sierra Bullets 55 Bullet Calibers Price List Print Vintage Ad Time left:
Newly ListedPair of Die Stamped Rocker Panels with Correct Curve & Correctly Placed Bullets (Fits: More than one vehicle)
VINTAGE SIERRA BULLETS INC. 30 30 EMPTY BOX Nice Graphics, Solid Box- collector
Sierra Bullets Embroidered Patch Rifle Ammo Firearms Pistol Gun Hunting Hat
Sierra Bullets Embroidered Patch Rifle Ammo Firearms Pistol Gun Hunting Hat Vest
Sierra bullets ammo sticker decal 4.75" x 1.75"
Sierra Bullets Moorooka Australia Award Winning Boy Shooter 1966 print Ad
Sierra Bullets National Bench Rest Matches 200 Yd Champion 1966 Ad advertisement
Vintage SIERRA BULLETS reloading Manual 1974
Sierra Bullets Little Rock AR Bear Hunter Kodiak Island Kill 1966 print Ad
EMPTY SIERRA 2 BULLET BOXES
SIERRA BULLETS EMPTY BOX
1961 Ad Big Game Hunters Use Sierra Bullets List Hunters Record
1960 SIERRA BULLET AD "MOST DEPENDABLE & ACCURATE" : Vintage Advertising
Bull Accessories 1001 Bullet In-Bed Tie Down Anchor Chevy/GMC (Pair) (Fits: More than one vehicle)
1961 SIERRA BULLET AD BIG GAME HUNTERS USE : Vintage Advertising
Bullet Handbook 4Th Edition rifle pistol sierra cartridge casting lyman vintage
SIERRA BULLETS THE BULLETSMITHS GUN RIFLE PISTOL HUNTING PATCH BRAND NEW !
Newly ListedVintage Sierra Bullets Patch
SIERRA BULLETS THE BULLETSMITHS GUN RIFLE PISTOL HUNTING YELLOW PATCH NEW !
2 Sierra 270 Caliber Bullets,Ammo Boxes (Empty)
Bull Accessories 1001 Bullet In-Bed Tie Down Anchor Chevy/GMC (Set of 8) (Fits: More than one vehicle)
Sierra Bullets Reloading Manual 1st Edition
Newly ListedVintage Sierra Bullets Trucker hat. Awesome find. Excellent used condition
VINTAGE SIERRA 25 CALIBER AMMO / BULLET BOX
Newly ListedSierra Bullets - Handgun - Reloading Manual - Three Ring Binder - Book
Newly Listed1959 Dodge HUB CAPS 15" Set of 4 Bullet Wheel Covers Hot Street Rat Rod Custom (Fits: Sierra)

value: This website is an American multinational e-commerce corporation based in San Jose, California, that facilitates consumer-to-consumer and business-to-consumer sales through its website.


text:
Kentridge, William Filmography
Latest News for: william kentridge
By and large, this is a season of art for art's sake. Vivid color is in full force, especially in painting, but also in the eye-popping quilts of Mary Lee Bendolph of Gee's Bend, Ala., which have taken over Swarthmore College's List Gallery and McCabe Library ... Curiously, video, photography, and installation art are scarce this fall. One powerfully sobering exception is the multimedia exhibition "Legacy of Lynching ... William Kentridge ... ....
Desirable art pieces, once the status symbol of a wealthy few, are finding new homes in luxury and boutique hotels ... Art is an investment, and well selected can be worth more than the establishment itself one day ... Linking the past and present ... Picture. Nathan Adams ... Art and social media ... The art at Ellerman House span over two centuries, from the works of the famous Thomas Bowler to contemporary works from artists such as William Kentridge....
William Kentridge's drawings, prints, and animated films have surprised, elated, and disturbed gallery and museum-goers since the late 1990s, when the South African artist, who had previously studied acting and worked as an art director of television films, acquired an international reputation for his art ... According to a wall text, Kentridge began ......
As he has stated in public, most recently to William Kentridge in a talk at The Centre ......
Art installation The Refusal of Time, a collaboration with Philip Miller, Catherine Meyburgh and Peter Galison, which features as part of the William Kentridge exhibition Thick Time, showing from 21 September to 15 January at the Whitechapel Gallery in London....
CAPE TOWN. The Institute for Creative Arts Live Art Festival ... Details. From September 1-16 ... Street Food Festival ZA. The festival takes place in Johannesburg and Cape Town ... Details. From September 1-9 ... Bad Gallerist ... Details ... Shonibare will also be in conversation with William Kentridge and Hlonipha Mokoena ... His conversation with Kentridge is on September 4 at 7pm at the Centre for the Less Good Idea, Maboneng, 261-279 Fox Street, Johannesburg....
The work of South African artist William Kentridge has often seemed hard to classify, - he deals in a variety of drawings and animations, but The Head & the Load may be the least classifiable of the lot ... William Kentridge says the number of Africans deployed on African soil in 1914-18 by the combatant nations of Europe was huge ... William Kentridge says the real effect came well after the war....
The Head and the Load, William Kentridge's Epic Production On Imperial Indifference in WWI, Premieres in London
[Daily Maverick] An astounding work by SA's premier artist William Kentridge pays homage to the hundreds of thousands of African soldiers who fought and died in World War I. The survivors - about two million served - returned to their countries with their service and humanity unacknowledged by their colonial overlords ... ....
Exhibition of the Week. Emil Nolde. Colour is Life. A powerful and thought-provoking exhibition of a great pioneer of modern art who was also a card-carrying Nazi. • Scottish National Gallery of Modern Art, Edinburgh, to 21 October. Also showing. Liverpool Biennial ... • Various venues, Liverpool, 14 July to 28 October. Life in the Dark ... Yves Klein ... Sean Scully ... Twitter ... William Kentridge paid memorable homage to Africa’s first world war dead ... .......
Send items at least two weeks in advance of event or opening to tgif@staradvertiser.com. Photos welcome. Note ... OPENINGS/EVENTS. Moana Lani Festival ... 2-11 p.m ... 7-9 p.m ... Works from the museum’s contemporary art collection that address identity, ethnic inequality and the environment, with artists including Vito Acconci, Robert Arneson, Jennifer Bartlett, Geoff Chadsey, Lesley Dill, Edgar Heap of Birds, William Kentridge and Kara Walker ... ....
Sculpture, song, shadow play. William Kentridge’s performance work about Africans in the First World War is an electrifying collage of imagery and ideas ... Similarly, Kentridge and his composers Philip Miller and Thuthuka Sibisi layer voices ... ....

value: This website is a news aggregator founded in March 1995 and launched online in 1998. In 2003, Search Engine Watch praised the service for its "Special Reports", and called it "an interesting alternative" to other news aggregation services.


text:
Super Soft Zebra Print Microfiber Down Alternative 3-piece Comforter Set Today $64.99 (23) Sassy Patch 4-piece Queen-size Comforter Set Today $54.99 (1) Spot the Dot 7-piece Bed in a Bag with Sheet Set Add to cart to see special price (3) Zebra Hearts 3-piece Comforter Set Today $54.99 (3) Zebra 3-piece Full/ Queen-size Mini Comforter Set Today $32.31 Compare $46.03 Save 30% (61) Home Essence Reversible Zebra Full/ Queen-size 3-piece Down Alternative Comforter and Sham Set Today $44.99 Compare $52.59 Save 14% (55) McKenzie 3-piece Zebra Stripe Ruffle Comforter Set Today $39.99 (1) Zebra/Pink 30-piece Twin Extra Long Dorm Room Superset Today $129.98 Compare $197.90 Save 34% (5) Lush Decor Kenya Black/Blue 6-piece Comforter Set Today $91.31 Compare $166.60 Save 45% (18) Galaxy 8-piece Reversible Bed in a Bag with Sheet Set Today $64.99 (1) Neon Leopard 7-piece Bed in a Bag with Sheet Set Today $49.99 Compare $88.88 Save 44% (32) Comfort Classic Zebra Twin-size 2-piece Down Alternative Comforter and Sham Set Today $42.99 Compare $57.59 Save 25% (2) Luxury Zebra Microfiber 3-piece Duvet Cover Set Today $34.99 (57) Zebra 2-piece Twin-size Mini Comforter Set Today $31.99 Compare $46.03 Save 31% (30) Posh Purple 3-piece Comforter Set Today $74.99 Compare $89.99 Save 17% (9) Laken Zebra 8-piece Flock Comforter Set Today $71.57 Compare $99.87 Save 28% (5) Jackie Mcfee Opposites Attract 7-piece Bed in a Bag with Sheet Set Today $84.99 Compare $115.48 Save 26% (7) Home Essence Reversible Zebra King-size 3-piece Down Alternative Comforter and Sham Set Today $45.99 Compare $80.40 Save 43% (15) Next Sponsored Links What's This?
http://www.overstock.com/Bedding-Bath/Zebra-Black-White-7-piece-Bed-in-a-Bag-with-Sheet-Set/6814002/product.html?recSet=eafe4a83-28b5-4088-b52d-e441e55be7c6

value: This website is an American internet retailer selling primarily furniture headquartered in Midvale, Utah, near Salt Lake City.


text: Electronics TV & Video All TVs > Refine Price $ to $ Go Top brands Samsung LG Store availability Sort Best sellers Price: low to high Price: high to low Highest rating New $1,397.99 List price $1799.99 Save $402.00 SAMSUNG 65" 6500 Series - 4K Ultra HD Smart LED TV - 21600p,120MR (Model#:UN65KU6500) 5.0 stars (81) ratings Free shipping Free store pickup CHECKOUT See details in cart List Price: $1597.99 Samsung UN50JU7500 - 50-Inch Curved 4K 120hz Ultra HD Smart 3D LED HDTV 5.0 stars (158) ratings Sold & Shipped by Walts TV Free shipping CHECKOUT See details in cart List Price: $1658.00 Lg 55sm5kb-b Digital Signage Display - 55" Lcd - 1920 X 1080 - Direct Led - 450 Nit - 1080p Sold & Shipped by Beach Audio Inc CHECKOUT See details in cart List Price: $1688.00 Samsung Dm55e - Dm-e Series 55" Slim Direct-lit Led Display - 55" Lcd - Arm Cortex A9 1 Ghz - 1.50 Gb Ddr3 Sdram - 1920 X 1080 - Direct Led - 450 Nit - 1080p - Hdmi - Usb - Dvi - Serial - (dm55e) Sold & Shipped by Beach Audio Inc CHECKOUT See details in cart List Price: $1799.99 Samsung UN65KU6300 65-Inch 4K Ultra HD Smart LED TV Sold & Shipped by Beach Audio Inc 1 Showing 5 of 5 results Shipping & Pickup Show all Ship to Home Screen Size 50" - 59" 60" - 69" Brand Samsung LG Television Type LCD TVs LED TVs Price $ to $ Go $0 - $150 $150 - $200 $200 - $250 $250 - $300 $300 - $350 $350 - $400 $400 - $450 $450 - $500 $500 - $700 $700 - $1000 $1000+ See more prices Resolution 4K UHD Condition New Special Offers Special Buy Reduced Price New As Advertised Price Shown at Cart See more special offers Internet Connection Y Customer Rating 4.0 stars & Up Retailer Beach Audio Inc Walts TV Popular in All TVs Samsung TV Samsung 48" TV VIZIO 4K TV Top Rated Products in All TV 1080 TV VIZIO Smart TV LCD Samsung TV Streaming HDTV TVsThe best TV for you will depend on your available space and how you intend to use the set. Walmart carries a huge selection of TVs from top brands, so it's easy to find one that meets your needs.TVs come in a wide range of sizes, from less than 20 inches to more than 60. In addition to the space where you'll put your TV, it's important to consider where you'll sit while you watch it. You'll want a larger TV if you'll be viewing it from further away and a smaller one if you'll be sitting close up.If you're a TV or film buff, you'll probably get a lot of use out of a smart TV, which will allow you to stream content from providers like VUDU, YouTube, Netflix, Hulu and Vimeo. It will also be helpful to get a TV that offers lots of connectivity options for your Blu-ray player, Apple TV and other devices. If you're a sports fan, look for a TV that provides a wide viewing angle and offers a 1000:1 static contrast ratio for an ideal viewing experience. Gamers need TVs that can keep up with fast-paced games and have HD displays that make games look their best. For gaming, look for a TV with a response time under 6ms and a refresh rate of at least 120Hz as well as a high-resolution display.

value: This website is an American multinational retail corporation that operates a chain of hypermarkets , discount department stores, and grocery stores from the United States, headquartered in Bentonville, Arkansas.


text:
The wealth of networks : how social production transforms markets and freedom (圖書, 2006) [WorldCat.org]
題名： The wealth of networks : how social production transforms markets and freedom
作者： Yochai Benkler
出版商概要 "This deeply researched book documents the fundamental changes in the ways in which we produce and share ideas, information, and entertainment. Then, drawing widely on the literatures of philosophy, economics, and political theory, it shows why these changes should be welcomed, not resisted. The trends examined, if allowed to continue, will radically alter our lives and no other scholar describes them so clearly or champions them more effectively than Benkler." William W. Fisher III, Hale and Dorr Professor of Intellectual Property Law, Harvard University, Director, Berkman Center for Internet and Society --William W. Fisher III"
添加標籤 目的是為 "The wealth of networks : how social production transforms markets and freedom".
Data(99 資料)
Messaging for a New Economy(13 資料)
Home Library(24 資料)
crowdsourcing(28 資料)

value: This website is a union catalog that itemizes the collections of 15,637 libraries in 107 countries that participate in the OCLC global cooperative. It is operated by OCLC, Inc.


text:
The Latest: Man acquitted of harboring Paris attackers | Daily Mail Online
Published: 10:53 EDT, 14 February 2018 | Updated: 10:58 EDT, 14 February 2018

value: This website is the website of the Daily Mail, a newspaper in the United Kingdom, and of its sister paper The Mail on Sunday. MailOnline is a division of dmg media, which is owned by Daily Mail and General Trust plc.


text:
Related Citations for PubMed (Select 15826113) - PubMed - NCBI
Display Settings:Summary,20 per page,Sorted by Link RankingFormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListItems per page5102050100200Sort byLink RankingPub DateFirst AuthorLast AuthorJournalTitleRelevanceApplySend to:Choose DestinationFileClipboardCollectionsE-mailOrderMy BibliographyCitation managerFormatSummary (text)Abstract (text)MEDLINEXMLPMID ListCSVSort byLink RankingPub DateFirst AuthorLast AuthorJournalTitleRelevanceCreate FileRelated Citations for PubMed (Select 15826113)FormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListMeSH and Other DataSort byLink RankingPub DateFirst AuthorLast AuthorJournalTitleRelevanceNumber to send5102050100200Start from citationE-mailSubjectAdditional textE-mailDidn't get the message? Find out why...Add to ClipboardAdd to CollectionsOrder articlesAdd to My BibliographyGenerate a file for use with external citation management software.Number to send5102050100200Start from citationCreate File
Select item 158261131.Immunotargeted nanoshells for integrated cancer imaging and therapy.Loo C, Lowery A, Halas N, West J, Drezek R.Nano Lett. 2005 Apr;5(4):709-11.PMID: 15826113 [PubMed - indexed for MEDLINE] Related citations Select item 147508912.Nanoshell-enabled photonics-based imaging and therapy of cancer.Loo C, Lin A, Hirsch L, Lee MH, Barton J, Halas N, West J, Drezek R.Technol Cancer Res Treat. 2004 Feb;3(1):33-40.PMID: 14750891 [PubMed - indexed for MEDLINE] Related citations Select item 190532403.Nanoshell-enabled photothermal cancer therapy: impending clinical impact.Lal S, Clare SE, Halas NJ.Acc Chem Res. 2008 Dec;41(12):1842-51. doi: 10.1021/ar800150g.PMID: 19053240 [PubMed - indexed for MEDLINE] Related citations Select item 175502974.Near-infrared resonant nanoshells for combined optical imaging and photothermal cancer therapy.Gobin AM, Lee MH, Halas NJ, James WD, Drezek RA, West JL.Nano Lett. 2007 Jul;7(7):1929-34. Epub 2007 Jun 6.PMID: 17550297 [PubMed - indexed for MEDLINE] Related citations Select item 165286175.Metal nanoshells.Hirsch LR, Gobin AM, Lowery AR, Tam F, Drezek RA, Halas NJ, West JL.Ann Biomed Eng. 2006 Jan;34(1):15-22. Epub 2006 Mar 10. Review.PMID: 16528617 [PubMed - indexed for MEDLINE] Related citations Select item 165994936.Calculated absorption and scattering properties of gold nanoparticles of different size, shape, and composition: applications in biological imaging and biomedicine.Jain PK, Lee KS, El-Sayed IH, El-Sayed MA.J Phys Chem B. 2006 Apr 13;110(14):7238-48.PMID: 16599493 [PubMed - indexed for MEDLINE] Related citations Select item 178054887.Immunonanoshells for targeted photothermal ablation in medulloblastoma and glioma: an in vitro evaluation using human cell lines.Bernardi RJ, Lowery AR, Thompson PA, Blaney SM, West JL.J Neurooncol. 2008 Jan;86(2):165-72. Epub 2007 Sep 6.PMID: 17805488 [PubMed - indexed for MEDLINE] Related citations Select item 202175918.Nanoshells for photothermal cancer therapy.Morton JG, Day ES, Halas NJ, West JL.Methods Mol Biol. 2010;624:101-17. doi: 10.1007/978-1-60761-609-2_7.PMID: 20217591 [PubMed - indexed for MEDLINE] Related citations Select item 164091009.Optically tunable nanoparticle contrast agents for early cancer detection: model-based analysis of gold nanoshells.Lin AW, Lewinski NA, West JL, Halas NJ, Drezek RA.J Biomed Opt. 2005 Nov-Dec;10(6):064035.PMID: 16409100 [PubMed - indexed for MEDLINE] Related citations Select item 1772253010.Immunonanoshells for targeted photothermal ablation of tumor cells.Lowery AR, Gobin AM, Day ES, Halas NJ, West JL.Int J Nanomedicine. 2006;1(2):149-54.PMID: 17722530 [PubMed - indexed for MEDLINE] Free PMC ArticleRelated citations Select item 1844736611.Noble metals on the nanoscale: optical and photothermal properties and some applications in imaging, sensing, biology, and medicine.Jain PK, Huang X, El-Sayed IH, El-Sayed MA.Acc Chem Res. 2008 Dec;41(12):1578-86. doi: 10.1021/ar7002804.PMID: 18447366 [PubMed - indexed for MEDLINE] Related citations Select item 1646411412.Cancer cell imaging and photothermal therapy in the near-infrared region by using gold nanorods.Huang X, El-Sayed IH, Qian W, El-Sayed MA.J Am Chem Soc. 2006 Feb 15;128(6):2115-20.PMID: 16464114 [PubMed - indexed for MEDLINE] Related citations Select item 1796076213.The potential use of the enhanced nonlinear properties of gold nanospheres in photothermal cancer therapy.Huang X, Qian W, El-Sayed IH, El-Sayed MA.Lasers Surg Med. 2007 Oct;39(9):747-53.PMID: 17960762 [PubMed - indexed for MEDLINE] Related citations Select item 1983478814.In vitro photothermal study of gold nanoshells functionalized with small targeting peptides to liver cancer cells.Liu SY, Liang ZS, Gao F, Luo SF, Lu GQ.J Mater Sci Mater Med. 2010 Feb;21(2):665-74. doi: 10.1007/s10856-009-3895-x. Epub 2009 Oct 16.PMID: 19834788 [PubMed - indexed for MEDLINE] Related citations Select item 1992809815.Modeling of plasmonic heating from individual gold nanoshells for near-infrared laser-induced thermal therapy.Cheong SK, Krishnan S, Cho SH.Med Phys. 2009 Oct;36(10):4664-71.PMID: 19928098 [PubMed - indexed for MEDLINE] Related citations Select item 2021721516.Immunoconjugated gold nanoshell-mediated photothermal ablation of trastuzumab-resistant breast cancer cells.Carpin LB, Bickford LR, Agollah G, Yu TK, Schiff R, Li Y, Drezek RA.Breast Cancer Res Treat. 2011 Jan;125(1):27-34. doi: 10.1007/s10549-010-0811-5. Epub 2010 Mar 10.PMID: 20217215 [PubMed - indexed for MEDLINE] Related citations Select item 1604732917.Near infrared laser-tissue welding using nanoshells as an exogenous absorber.Gobin AM, O'Neal DP, Watkins DM, Halas NJ, Drezek RA, West JL.Lasers Surg Med. 2005 Aug;37(2):123-9.PMID: 16047329 [PubMed - indexed for MEDLINE] Related citations Select item 1877910118.Energy absorption of gold nanoshells in hyperthermia therapy.Liu C, Mi CC, Li BQ.IEEE Trans Nanobioscience. 2008 Sep;7(3):206-14. doi: 10.1109/TNB.2008.2002284.PMID: 18779101 [PubMed - indexed for MEDLINE] Related citations Select item 1786795819.Efficacy of laser-activated gold nanoshells in ablating prostate cancer cells in vitro.Stern JM, Stanfield J, Lotan Y, Park S, Hsieh JT, Cadeddu JA.J Endourol. 2007 Aug;21(8):939-43.PMID: 17867958 [PubMed - indexed for MEDLINE] Related citations Select item 1590698720.Gold nanoshell bioconjugates for molecular imaging in living cells.Loo C, Hirsch L, Lee MH, Chang E, West J, Halas N, Drezek R.Opt Lett. 2005 May 1;30(9):1012-4.PMID: 15906987 [PubMed - indexed for MEDLINE] Related citations << First< PrevPage of 8Next >Last >>

value: This website is part of the United States National Library of Medicine , a branch of the National Institutes of Health . It is approved and funded by the government of the United States.


text:
The Art of Cyber War: Cyber Security Strategies in a Rapidly Evolvin…
Is the world in the midst of a cyber-war? If so, what are the implications?
In this presentation Carl Herberger, Radware's VP of Security Solutions, explores some of the most notable recent cyber-attacks and how many of the findings correlate with the tenets of warfare as defined in The Art of War by Sun Tzu, the ancient military general, strategist and tactician. How should organizations be preparing for an information security landscape that is shaped by ideologically motivated cyber warfare rather than just opportunistic cyber-crime? Learn the techniques being employed to safeguard IT operations in a theatre that is witnessing ever more sophisticated attacks.
For more on how to help detect, mitigate and win this cyber war battle, visit here: http://www.radware.com/ert-report-2013/ to download the 2013 Global Application and Network Security Report.
, Team Lead at National Computer Emergency Respose Team
Glenn John Boquilon
, IT Manager at Owens Asia, Inc.
at Owens Asia, Inc. (formerly OwensBPO, Inc.)
© Radware, Inc. 2014
Strategies in a rapidly evolving theatre
2© Radware, Inc. 2014
4© Radware, Inc. 2014
entity trough indirect
as part of a Hacktivist
5© Radware, Inc. 2014
6© Radware, Inc. 2014
7© Radware, Inc. 2014
8© Radware, Inc. 2014
The good fighters of old first put themselves beyond the possibility of defeat
9© Radware, Inc. 2014
11© Radware, Inc. 2014
Battlefield: Columbia Government On-line Services
Cause: Columbian Independence
Battle: A large scale cyber attack held on July 20th - Columbian
Independence Day - against 30 Colombian government websites.
Result: Most web sites were either defaced or shut down completely
for the entire day of the attack.
行軍: Columbia
12© Radware, Inc. 2014
Attackers: Columbian Hackers
• A known hacker collective group suspected as being responsible
for several other cyber attacks in Colombia during 2012-13. The
group was supported by sympathizers use Twitter to communicate.
Motivation: Ideological
• Anti-government stance claiming to stand for “freedom, justice
and peace.” Mantra: “We are Colombian Hackers, to serve the
13© Radware, Inc. 2014
• Directory traversal – web application attack to get access to
password files that can be later cracked offline.
• Brute force attacks on pcAnywhere service – looking for weak
password protected accounts enables attackers to gain remote access
to victim servers.
• SQL Injection attacks – web application attacks to gain remote
• Web application vulnerability scanning
• Application attacks: we have mainly seen HTTP Flood attacks
Network DDoS attacks:
• SYN floods, UDP floods, ICMP floods
• Anomalous traffic (invalid TCP flags, source port zero, invalid
L3/L4 header)
• TCP port scans
14© Radware, Inc. 2014
15© Radware, Inc. 2014
• Purported Iranian state sponsored acktavist collective said to be acting
to defend Islam
Motivation: Religious Fundamentalism
• “Well, misters! The break's over and it's now time to pay off.
After a chance given to banks to rest awhile, now the Cyber Fighters of
Izz ad-Din al-Qassam will once again take hold of their destiny.
As we have said earlier, the Operation Ababil is performed because of
widespread and organized offends to Islamic spirituals and holy issues,
especially the great prophet of Islam(PBUH) and if the offended film is
eliminated from the Internet, the related attacks also will be stopped.
While the films exist, no one should expect this operation be fully
The new phase will be a bit different and you'll feel this in the coming
Mrt. Izz ad-Din al-Qassam Cyber Fighters”
16© Radware, Inc. 2014
• Cause web server resource starvation due to overwhelming number of page downloads.
• SSL based HTTPS GET requests generate a major load on the HTTP server by consuming 15x
more CPU in order to process the encrypted attack traffic.
17© Radware, Inc. 2014
18© Radware, Inc. 2014
Challenge & Response Escalations:
• Automatic Challenge mechanisms are employed by the Radware Attack
Mitigation System to discriminate between legitimate traffic and
• Phase 4 attackers implemented advanced mechanisms that emulated
normal web browser users in order to circumvent mitigation tools
• Necessitated the implementation of increasingly sophisticated
challenge mechanisms that could not be supported by attack tools
19© Radware, Inc. 2014
Battlefield: Spamhaus
Cause: Corporate Ideological Differences
Battle: A nine-day assault that resulted in the largest
recorded volumetric Distributed Denial of Service
attack that peaked at over 300Gbps.
Result: Spamhaus actually went down but claimed to have
withstood the attack but only with the assistance
from companies such as CloudFlare and Google.
Given the scale of the attack and the techniques
used, concerns were expressed that the very fabric
of the internet could be compromised.
行軍: Spamhaus
20© Radware, Inc. 2014
Attackers: CyberBunker?
• Provider of anonymous secure hosting services
Motivation: Retaliation against Spamhaus
• CyberBunker, a provider of secure and anonymous hosting services,
was blacklisted by Spamhaus, a non-profit anti-spamming
organization that advises ISPs. It was claimed that CyberBunker
was a 'rogue' host and a haven for cybercrime and spam
organizations. Spamhaus alleged that Cyberbunker, with the aid of
"criminal gangs" from Eastern Europe and Russia, launched a DDoS
attack against Spamhaus for “abusing its influence.”
21© Radware, Inc. 2014
• The attack started as an 10-80Gbps attack that was firstly
contained successfully, it started as a volumetric attack on
layer 3 and peaked to 75Gbps on March 20.
• During March 24-25 the attack grew to 100Gbps, peaking at
309Gbps.
• No Botnet in use. Attackers were using servers on networks that
allow IP spoofing in conjunction with open DNS resolvers.
• Miss-configured DNS resolvers – with no response rate limiting -
allow the amplification of the attack by the factor of 50!
• Nearly 25% of the networks are configured to allow spoofing
instead of employing BCP38…
• There are over 28 Million open resolvers in operation…
22© Radware, Inc. 2014
Battlefield: New York Times
Cause: Syrian Conflict
Battle: NYTimes Domain Name Server attack.
Result: New York Times website taken offline for almost
2 hours as domain was redirected to Syrian
Electronic Army servers.
行軍: New York Times
23© Radware, Inc. 2014
Attackers: Syrian Electronic Army
• Hackers aligned with Syrian President Bashar Assad. Mainly targets
political opposition groups and western websites, including news
Attacks: Spear Phishing & Directed DNS Attacks
• Phishing attacks on Melbourne IT, the New York Times DNS registrar.
• SEA hacked the NYT account and redirected the domain to its servers.
24© Radware, Inc. 2014
Firewall IPS/IDS Load Balancer
Being unconquerable lies with yourself
26© Radware, Inc. 2014
27© Radware, Inc. 2014
Proportion of businesses relying on CDNs for DDoS Protection
28© Radware, Inc. 2014
29© Radware, Inc. 2014
Cloud protection limitations
30© Radware, Inc. 2014
Threats: Universal DDoS Mitigation Bypass
Source: BlackHat USA 2013
Presenters: Nexusguard Ltd, NT-ISAC Bloodspear Labs
Goal: Defeat all known mechanisms for automatic
Authors: Tony T.N. Miu, Albert K.T. Hui, W.L. Lee, Daniel
X.P. Luo, Alan K.L. Chung, Judy W.S. Wong
or CAPTCHA-based authentications being the most effective by
far. However, in our research weaknesses were found in a
majority of these sort of techniques.
We rolled all our exploits into a proof-of-concept attack tool,
giving it near-perfect DDoS mitigation bypass capability
against almost every existing commercial DDoS mitigation
solutions. The ramifications are huge. For the vast majority of
web sites, these mitigation solutions stand as the last line of
defense. Breaching this defense can expose these web sites'
backend to devastating damages.
We have extensively surveyed DDoS mitigation technologies
available on the market today, uncovering the countermeasure
techniques they employ, how they work, and
31© Radware, Inc. 2014
32© Radware, Inc. 2014
34© Radware, Inc. 2014
Attacker has time to bypass automatic mitigation
Target does not possess required defensive skills
35© Radware, Inc. 2014
36© Radware, Inc. 2014
37© Radware, Inc. 2014
39© Radware, Inc. 2014
40© Radware, Inc. 2014
41© Radware, Inc. 2014
42© Radware, Inc. 2014
43© Radware, Inc. 2014
44© Radware, Inc. 2014
45© Radware, Inc. 2014
46© Radware, Inc. 2014
Don’t assume that you’re not a
47© Radware, Inc. 2014
Protecting your data is not the same
as protecting your business.
True security necessitates data
protection, system integrity and
operational availability.
48© Radware, Inc. 2014
49© Radware, Inc. 2014
You can’t defend against attacks you
can’t detect.
The battle prepared business
harnesses an intelligence network.
50© Radware, Inc. 2014
Don’t believe the DDoS protection
Understand the limitations of cloud-
based scrubbing solutions.
Not all networking and security
appliance solutions were created
51© Radware, Inc. 2014
Enlist forces that have expertise to
52© Radware, Inc. 2014
53© Radware, Inc. 2014
carl.herberger@radware.com

value: This website is an American hosting service, now owned by Scribd, for professional content including presentations, infographics, documents, and videos. Users can upload files privately or publicly in PowerPoint, Word, PDF, or OpenDocument format.


text:
Books Fiction Fantasy Contemporary A Stroke of Midnight
A Stroke of Midnight by
I am Meredith Gentry, P.I. and Princess Merry, heir to the throne of Fairie. I have departed the safe haven of Los Angeles to face the peril and deception of my first home, the Unseelie court. There, my enemies are many, and my guards may not be able to protect me from the treachery of the unseen foes that will stop at nothing to keep me from the ...
12604170903
12494385940
12469310194
12509832140
12617022859
12565045748
12537081532
12506643829
12525652080
12577269086
All Editions of A Stroke of Midnight 2010, Audiobook CD
9781596008137
9781593554248

value: This website is is an online store that sells new books, used books, out-of-print books, rare books, and other media through an online network of independent booksellers.


text:
G.R.Sharma was a Historian from Allahabad University who led the Kausambi excavations which added to original historical research in the country. The ruins of this ancient city were found on the left bank of the river Yamuna, 70 km south-west from Allahabad.[1] Thus commenced excavations of the site by the late Prof. G.R. Sharma of the Allahabad University in 1949 and again in 1951-1956.[2] Following these excavations numerous remains of the ancient city came to light.[2] He is among the historians who brought archeology in the mainstream of studying History.
Professor G.R. Sharma, had ventured to document archaeologically the destruction and burning of several settlements in the Ganges valley during the so-called invasion of the Indo-Greek king Menander (considered to be identical with Milinda of the Buddhist tradition) in the 2nd century BC.[3]
Professor G.R.Sharma had also discovered (in 1967) a prehistoric site near Khajuri on the river Belan, a tributary of the river Tons, in the Meja sub-division of Allahabad district of Uttar Pradesh.[4]
^ Rohan L. Jayetilleke (2007-12-05). "The Ghositarama of Kaushambi". Daily News. Retrieved 2008-10-29. ^ a b Rohan L. Jayetilleke (2007-12-05). "The Ghositarama of Kaushambi". Daily News. Retrieved 2008-10-29. ^ K.M.Shrimali (2003-10-11). "Whither Indian archaeology?". Frontline. Retrieved 2008-01-26. ^ Sankalia, H.D. (1985). Studies in Indian archaeology : professor H.D. Sankalia felicitation volume. Popular Prakashan. ISBN 978-0-86132-088-2. Further reading[edit]
Retrieved from "https://en.wikipedia.org/w/index.php?title=G._R._Sharma&oldid=774355594"	Categories: 20th-century Indian historiansIndian IndologistsScientists from Uttar Pradesh20th-century Indian archaeologistsAllahabad University facultyPeople from GhazipurHidden categories: Use Indian English from November 2015All Wikipedia articles written in Indian EnglishUse dmy dates from November 2015Year of death missingYear of birth missing	Navigation menu

value: This website is the English-language edition of the free online encyclopedia Wikipedia. It was founded on 15 January 2001 as Wikipedia's first edition and, as of October 2021, has the most articles of any edition, at 6,412,521.


text:
En Saga (feat. Sir Colin Davis & Boston Symphony Orchestra) - Jean Sibelius - BBC Music The BBC has updated its cookie policy. We use cookies to ensure that we give you the best experience on our website. This includes cookies from third party social media websites if you visit a page which contains embedded content from social media. Such third party cookies may track your use of the BBC website. We and our partners also use cookies to ensure we show you advertising that is relevant to you. If you continue without changing your settings, we'll assume that you are happy to receive all cookies on the BBC website. However, you can change your cookie settings at any time. Continue Change settings Find out more ]]> Accessibility links Skip to content Accessibility Help BBC iD Notifications
]]> Music Tracks Performances Playlists Artists More My Music Menu My Music Home Tracks Popular Find a Track Recommended Performances Popular All Recommended Playlists Featured All Recommended Artists Popular All Recommended More BBC Music News LIVE BBC Music My Generation BBC Introducing BBC Music in iPlayer BBC Proms Glastonbury BBC Performing Groups Sound Of 2017 My Music My Tracks My Performances My Interviews My Playlists My Artists En Saga (feat. Sir Colin Davis & Boston Symphony Orchestra) Share this track Share this with Digg Facebook Google LinkedIn Reddit StumbleUpon Twitter Copy this link http://www.bbc.co.uk/music/records/nngpn8 Read more about sharing. Add Artist Jean Sibelius Featured Artist Sir Colin Davis Boston Symphony Orchestra Languages:

value: This website is the BBC's online service. It is a large network of websites including such high-profile sites as BBC News and Sport, the on-demand video and radio services co-branded BBC iPlayer, the children's sites CBBC and CBeebies, and learning services such as Bitesize.