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Patent US8062260 - Trocar cannula device with retention feature - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA trocar cannula is disclosed. The trocar cannula comprises a cannula having at least one tab member formed therein. Each tab member is configured to provide a retention force between the cannula and tissue when the tab member is placed in a deformed position. The tab member is selectively moveable between...http://www.google.com/patents/US8062260?utm_source=gb-gplus-sharePatent US8062260 - Trocar cannula device with retention featureAdvanced Patent SearchTry the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents.Publication numberUS8062260 B2Publication typeGrantApplication numberUS 12/644,147Publication dateNov 22, 2011Filing dateDec 22, 2009Priority dateDec 22, 2009Fee statusPaidAlso published asUS20110152773Publication number12644147, 644147, US 8062260 B2, US 8062260B2, US-B2-8062260, US8062260 B2, US8062260B2InventorsMatthew D. McCawleyOriginal AssigneeAlcon Research, Ltd.Export CitationBiBTeX, EndNote, RefManPatent Citations (10), Non-Patent Citations (6), Classifications (13), Legal Events (2) External Links: USPTO, USPTO Assignment, EspacenetTrocar cannula device with retention feature
US 8062260 B2Abstract
A trocar cannula is disclosed. The trocar cannula comprises a cannula having at least one tab member formed therein. Each tab member is configured to provide a retention force between the cannula and tissue when the tab member is placed in a deformed position. The tab member is selectively moveable between a relaxed position, in which the cannula may be moved with respect to the tissue, and the deformed position, wherein the tab member frictionally engages the tissue.
1. A trocar cannula, comprising:
a cannula defined by a distal end and a proximal end; and
at least one tab member formed from a portion of a sidewall of the cannula;
wherein each tab member is configured to provide a retention force between the cannula and tissue, wherein the tab member is selectively moveable between a relaxed position in which the cannula can be moved with respect to the tissue and a deformed position wherein the tab member frictionally engages the tissue, and wherein the tab member is recessed inwardly of an outer surface of the cannula when the tab member is in the relaxed position.
2. The trocar cannula of claim 1, wherein the tab member is deflected upwardly from the outside surface of the cannula when in the deformed position.
3. The trocar cannula of claim 1, wherein the tab member further comprises a mechanical finger having an upwardly biased end.
4. The trocar cannula of claim 3, further comprising a crimp section that serves to bias the biased end upwardly.
5. The trocar cannula of claim 3, wherein an uppermost edge of the biased end is positioned a predetermined distance below an outside surface of the cannula.
6. The trocar cannula of claim 1, wherein the tab member is formed by a generally U-shaped cut-out that permits an end of the tab member to move with respect to the sidewall of the cannula.
7. The trocar cannula of claim 6, further comprising a bend area formed in the sidewall that is configured to bias the tab member inwardly with respect to an outside surface of the cannula, into the relaxed position.
8. The trocar cannula of claim 7, wherein the bend area is configured to permit selective upward deflection of tab member, above the outside surface of the cannula, into the deformed position when an instrument is inserted into the cannula.
9. A trocar cannula system, comprising:
a medical instrument selectively insertable within the cannula;
wherein the cannula further comprises at least one tab member formed from a portion of a sidewall of the cannula, each tab member being configured to provide a retention force between the cannula and tissue when the medical instrument is inserted within the cannula;
wherein the tab member is recessed inwardly of an outer surface of the cannula when the tab member is in a relaxed position;
and wherein the tab member is selectively moveable between the relaxed position in which the cannula can be moved with respect to the tissue and a deformed position wherein the tab member frictionally engages the tissue.
10. The trocar cannula system of claim 9, wherein the tab member further comprises a mechanical finger having crimp section and a biased end, wherein the crimp section biases the biased end upwardly.
11. The trocar cannula system of claim 10, wherein an uppermost edge of the biased end is positioned below an outside surface of the cannula when the tab member is in the relaxed position.
12. The trocar cannula system of claim 11, wherein the instrument contacts the crimp section to force the biased end upwardly from the outside surface of the cannula when the tab member is in the deflected position.
13. The trocar cannula system of claim 9, wherein the tab member is configured to return to the relaxed position from the deflected position when the instrument is removed from the cannula.
14. The trocar cannula system of claim 9, wherein the tab member is formed by a generally U-shaped cut-out that permits an end of the tab member to move with respect to the sidewall of the cannula.
15. The trocar cannula system of claim 14, further comprising a bend area formed in the sidewall that is configured to bias the tab member into the relaxed position wherein the tab member is positioned inwardly with respect to an outside surface of the cannula.
16. The trocar cannula system of claim 15, wherein the bend area is configured to permit selective upward deflection of the tab member, above the outside surface of the cannula, into the deformed position when the instrument is inserted into the cannula.
17. A trocar cannula system, comprising:
wherein the cannula further comprises at least one tab member formed therein, each tab member being formed by a generally U-shaped cut-out in the sidewall of the cannula, and wherein the tab member further comprises crimp section that biases an end of the tab member upwardly; wherein the tab member is selectively moveable between a relaxed position and a deformed position; wherein the relaxed position is one in which the medical instrument is removed from the cannula and the end of the tab member is biased so as to be disposed below an outside surface of the cannula such that the cannula may-can be moved with respect to the tissue, and wherein the deformed position is one in which the medical instrument is inserted into the cannula and contacts the crimp section to deform the tab member and deflect the end of the tab member upwardly past the outside surface of the cannula such that the end of the tab member frictionally engages the tissue to prevent the trocar cannula from moving with respect to the tissue. Description
The present disclosure generally pertains to microsurgical instruments. More particularly, but not by way of limitation, the present disclosure relates to microsurgical instruments used in posterior segment ophthalmic surgery.
Many microsurgical procedures require precision cutting and/or removal of various body tissues. For example, vitreoretinal surgery often requires the cutting, removal, dissection, delamination, coagulation, or other manipulation of delicate tissues such as the vitreous humor, traction bands, membranes, or the retina. The vitreous humor, or vitreous, is composed of numerous microscopic fibers that are often attached to the retina. Therefore, cutting, removal, or other manipulation of the vitreous must be done with great care to avoid traction on the retina, the separation of the retina from the choroid, a retinal tear, or, in the worst case, cutting and removal of the retina itself.
Microsurgical instruments, such as vitrectomy probes, fiber optic illuminators, infusion cannulas, aspiration probes, scissors, forceps, and lasers are typically utilized during vitreoretinal surgery. These devices are generally inserted through one or more surgical incisions in the sclera near the pars plana, which are called sclerotomies. To establish an entry through the sclera into the posterior segment of the eye, trocar cannulas are typically used. The trocar cannula generally serves as a pathway through which various microsurgical instruments may be delivered to the posterior segment of the eye.
Typically, a surgeon relies upon friction between an outer surface of the trocar cannula and the sclera of the eye to maintain the trocar cannula's position within the eye. However, during an exchange of the microsurgical instruments, there is a risk that the trocar cannula may be inadvertently moved, which may cause injury to the patient. To insure against inadvertent movement of the trocar cannula, in prior art systems a surgeon grasps a cannula hub with a pair of forceps during the instrument exchange to maintain the position of the trocar cannula. Such a practice requires an extra step in the surgical procedure, thereby increasing the length of surgery. In addition, this practice also requires an extra hand to hold the forceps. Therefore, a need remains for an improved retention mechanism for a trocar cannula.
A trocar cannula is disclosed. The trocar cannula comprises a cannula having a tab member formed therein. The tab member is configured to provide a retention force between the cannula and tissue when the tab member is placed in a deformed position. The tab member is selectively moveable between a relaxed position, in which the cannula may be moved with respect to the tissue, and the deformed position, wherein the tab member frictionally engages the tissue.
In one exemplary arrangement, the tab member is biased into the relaxed position, but may be selectively moved into the deformed position by introduction of a medical instrument into the cannula. Once in the deformed position, the tab member frictionally engages tissue to retain the cannula with respect to the tissue. Upon withdrawal of the medical instrument from the cannula, the tab member is automatically returned to the relaxed position whereby the cannula may be moved with respect to the tissue.
Embodiments of the present disclosure will now by described by way of example in greater detail with reference to the attached figures, in which:
FIG. 1 is a cross-sectional view of an embodiment of a trocar cannula device;
FIG. 2 is a is an enlarged cross-sectional view of area 2 of the trocar cannula device of FIG. 1;
FIG. 3 is a cross-sectional view of the trocar cannula device of FIG. 1 with a medical instrument positioned therein.
FIG. 4 is an end view of the trocar cannula device and medical instrument of FIG. 3.
FIG. 5 is a top view of the trocar cannula device and medical instrument of FIG. 3.
FIG. 6 is an enlarged cross-sectional view of area 6 of the trocar cannula device and medical instrument of FIG. 3.
FIG. 7 is an enlarged top view of area 7 of the trocar cannula device of FIG. 5.
FIG. 8 is an enlarged cross-sectional view of a portion of the trocar cannula device and medical instrument of FIG. 3, with a retaining tab engaged with tissue.
Referring now to the discussion that follows and also to the drawings, illustrative approaches to the disclosed devices and methods are shown in detail. Although the drawings represent some possible approaches, the drawings are not necessarily to scale and certain features may be exaggerated, removed, or partially sectioned to better illustrate and explain the present disclosure. Further the descriptions set forth herein are not intended to be exhaustive or otherwise limit or restrict the claims to the precise forms and configurations shown in the drawings and disclosed in the following detailed description.
FIG. 1 illustrates an exemplary embodiment of a trocar cannula device 10. Trocar cannula device 10 is generally defined by an open proximal end 12 and an open distal end 14 and comprises a cannula section 16 and an introduction section 18. Cannula section 16 includes a generally hollow bore 20 defined by an internal surface 22. Cannula section 16 opens into introduction section 18. In one exemplary arrangement, a transition section 24 connects cannula section 16 to introduction section 18.
Introduction section 18 has a generally hollow chamber 26 defined by an internal surface 28 and an opening 30 positioned at proximal end 12. Surrounding opening 30 is an optional flange member 32. Internal surface 28 may optionally be configured with a protrusion 31 (shown in phantom in FIG. 1) that mates with a corresponding well (not shown) disposed on an external surface of 52. Details of protrusion 31 are discussed in commonly owned U.S. patent application Ser. No. 11/624,485, the contents of which are incorporated by reference in its entirety.
Cannula section 16 is defined by a first internal diameter d1. Introduction section 18 is defined by a second internal diameter D2. In one exemplary arrangement, first internal diameter d1 is less than second internal diameter D2. In one exemplary arrangement, trocar cannula device 10 is formed as a unitary member such that cannula section 16 and introduction section 18 are integrally connected together. Trocar cannula device 10 may be constructed from surgical stainless steel or other materials suitable for surgical applications.
As discussed above, during surgical procedures, trocar cannula device 10 is positioned within the patient's eye to provide a pathway for delivery of surgical instruments. To insure that trocar cannula device 10 is prevented from inadvertent dislodgement during a surgical procedure, trocar cannula device 10 is provided with at least one cantilever tab member 34. In some embodiments, such as that shown in the accompanying drawing figures, trocar cannula device 10 is provided with multiple cantilever tab members 34. Each cantilever tab member 34 is configured to increase a retention force required to remove trocar cannula device 10 from the sclera 36 (see FIG. 8) of the eye.
Details of cantilever tab member 34 will now be discussed. Cantilever tab member 34 is formed from a portion of a sidewall 38 of cannula section 16 and comprises a mechanical finger 40 that includes an upwardly biased end 42. Tab member 34 is formed by a generally U-shaped cut-out 44 that permits end 42 to move with respect to side wall 38. As seen in FIG. 2, cantilever tab member 34 includes a crimp section 46 that separates mechanical finger 40 from the portion of sidewall 38. Crimp section 46 is formed so as to pre-bias end 42 upwardly. Referring to FIG. 5, a bend area 48 is formed in sidewall 38. Bend area 48 is configured to bias cantilever tab member 34 inwardly with respect to an outside surface 50 by a predetermined distance when trocar cannula member 10 is in a relaxed state (best seen in FIG. 2). More specifically, in the relaxed state, cantilever tab member 34 (including biased end 42) sits below outer surface 50, thereby permitting trocar cannula member 10 to be easily moved with respect to sclera 36. In one embodiment, a slight clearance C is provided between an uppermost edge of biased end 42 and outside surface 50 (see FIG. 2).
However, referring now to FIGS. 3-8, when an instrument 52 is positioned within trocar cannula device 10, mechanical finger 40 is deflected outwardly from outside surface 50 in the radial direction such that biased end 42 extends outwardly from outside surface 50. More specifically, instrument 52 contacts crimp section 46 as it is inserted into bore 20, forcing crimp section 46 upwardly, and consequently forcing biased end 42 upward into a deformed position (seen best in FIGS. 6 and 8) such that biased end 42 may grip sclera 36. The radial deflection of mechanical finger 40 creates a mechanical mechanism for increasing the retention force between trocar cannula 10 and sclera 36 as compared to a simple frictional engagement of outside surface 50 of trocar cannula 10 and sclera 36. The added retention force from mechanical finger 40 eliminates the need to have the surgeon retain trocar cannula 10 with forceps or other means during an instrument exchange. The elimination of this step serves to reduce procedure time, as well as provide the surgeon with a free hand for handling additional instruments.
Once a procedure is complete, and all instruments are removed from trocar cannula device 10, cantilever tab member 34 automatically returns to the relaxed position whereby mechanical finger 40 (including biased end 42) is disposed below outer surface 50. The return feature is due to the configuration of bend area 48. Once in this position, trocar cannula device 10 may be easily removed from the patient.
In one exemplary arrangement, the instrument 52 is an infusion cannula that permits irrigating fluid to enter the posterior segment of the eye to maintain a suitable intraocular pressure. However, it is understood that other microsurgical instruments may also be used with trocar cannula device 10.
It will be appreciated that the devices and methods described herein have broad applications. The foregoing embodiments were chosen and described in order to illustrate principles of the methods and apparatuses as well as some practical applications. The preceding description enables others skilled in the art to utilize methods and apparatuses in various embodiments and with various modifications as are suited to the particular use contemplated. In accordance with the provisions of the patent statutes, the principles and modes of operation of this invention have been explained and illustrated in exemplary embodiments.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS4963147 *Jul 14, 1989Oct 16, 1990John M. AgeeSurgical instrumentUS5997560 *Jul 17, 1998Dec 7, 1999Sdgi Holdings, Inc.Surgical cutting instrumentUS6149607 *Aug 4, 1998Nov 21, 2000Endonetics, Inc.Multiple sample biopsy deviceUS6551291Aug 4, 1999Apr 22, 2003Johns Hopkins UniversityNon-traumatic infusion cannula and treatment methods using sameUS6638233 *Aug 19, 1999Oct 28, 2003Fox Hollow Technologies, Inc.Apparatus and methods for material capture and removalUS7077848Mar 11, 2000Jul 18, 2006John Hopkins UniversitySutureless occular surgical methods and instruments for use in such methodsUS7377897 *Apr 30, 2003May 27, 2008Kunkel Sanford SPortal deviceUS20060217655Mar 8, 2005Sep 28, 2006Vitullo Jeffrey MPre-loaded lockable stimulating catheter for delivery of anaesthetic drugsUS20080172009 *Jan 11, 2007Jul 17, 2008Alcon, Inc.Self-Sealing CannulaUS20080177239Jan 18, 2007Jul 24, 2008Yong LiTrocar cannula system* Cited by examinerNon-Patent CitationsReference1"ACCURUS® Surgical System 25-Gauge Instruments Portfolio," ALCON, Inc., 2005; 6 pgs.2Charters, L.; "Tackling complex retinal surgery possible with smaller instrumentation," Ophthalmology Times; 31:8; Apr. 2006; 1 pg.3Groves, N.; "More surgeons adopting 25-gauge vitrectomy technique," Ophthalmology Times; Jun. 2005; 5 pgs.4Groves, N.; "Tools for 25-gauge vitrectomy open door for other procedures," Ophthalmology Times; 30:12; Jun. 2005; 2 pgs.5Reimann, C.; "Expanding the Options for 25-ga. Vitrectomy," Review of Ophthalmology; Feb. 2005; 3 pgs.6Roe, R.H. et al.; "Small-Gauge Vitrectomy: The Future is Now," Rev. of Ophthalmology; 14:06; Jun. 1, 2007; 4 pgs.Classifications U.S. Classification604/164.12, 606/167, 606/4, 604/164.01, 604/178, 604/294International ClassificationA61M5/178Cooperative ClassificationA61B2017/00345, A61B2017/3482, A61B17/3421, A61F9/007European ClassificationA61F9/007, A61B17/34G4Legal EventsDateCodeEventDescriptionJan 19, 2010ASAssignmentOwner name: ALCON RESEARCH, LTD., TEXASFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MCCAWLEY, MATTHEW D.;REEL/FRAME:023809/0265Effective date: 20100118May 6, 2015FPAYFee paymentYear of fee payment: 4RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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Patent US5665166 - Plasma processing apparatus - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsDisclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing...http://www.google.com/patents/US5665166?utm_source=gb-gplus-sharePatent US5665166 - Plasma processing apparatusAdvanced Patent SearchPublication numberUS5665166 APublication typeGrantApplication numberUS 08/735,489Publication dateSep 9, 1997Filing dateOct 23, 1996Priority dateJan 29, 1993Fee statusPaidPublication number08735489, 735489, US 5665166 A, US 5665166A, US-A-5665166, US5665166 A, US5665166AInventorsYouichi Deguchi, Satoru Kawakami, Yoichi Ueda, Mitsuaki KominoOriginal AssigneeTokyo Electron LimitedExport CitationBiBTeX, EndNote, RefManPatent Citations (7), Referenced by (93), Classifications (14), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetPlasma processing apparatus
US 5665166 AAbstract
Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.
1. A plasma processing apparatus, comprising:a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; bias potential detecting means for detecting the bias potential of the first electrode, said bias detecting means having a detecting terminal positioned in a plasma-processing space formed by supply of a high frequency power to said first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic checking means and said DC power supply. 2. The apparatus according to claim 1, wherein the upper end of said detecting terminal is positioned above said first electrode and below a plasma sheath generated within the region between the first and second electrodes.
In applying, for example, an etching process to a semiconductor wafer by generating a plasma, a sheath voltage VS, which is greatly dependent on the energy of the ion and is an important parameter of the etching, is determined by a plasma potential Vp and a negative potential VDC with which a negative electrode is biased. Since the negative potential VDC is more dominant than the plasma potential Vp, it is important to measure particularly the negative voltage VDC.
Let us describe how the negative voltage VDC is measured in the conventional technique with reference to FIG. 1 showing a general RIE type plasma etching apparatus 101. As shown in the drawing, an upper electrode 103 and a lower electrode 104 are arranged to face each other within a processing chamber 102. A semiconductor wafer 108 is electrostatically chucked by an electrostatic chuck 107 mounted on the upper surface of the lower electrode 104. Under this condition, a plasma-forming gas is introduced into the processing chamber 102 through a gas passageway 114 and a plurality of gas spurting ports 115 formed in the upper electrode 103. At the same time, a high frequency power is supplied from a high frequency power supply 105 to the lower electrode 104 through a matching circuit 113 and a blocking capacitor 106 so as to generate a plasma in the space between the upper electrode 103 and the lower electrode 104, with the result that a plasma etching is applied to the semiconductor wafer 108.
For monitoring the negative potential VDC in the plasma etching apparatus 101 of the construction described above, an appropriate lead wire 110 is connected to a power supply wire 109 extending between the lower electrode 104 and the blocking capacitor 106. As shown in FIG. 1, the lead wire 110 is connected to the power supply wire 109 outside of the processing chamber 102. Further, a VDC monitor 112 is connected to the lead wire 110 with an RF filter 111 interposed therebetween so as to permit the monitor 112 to monitor the negative potential VDC.
It should be noted, however, that an anodic oxidation treatment is applied to the surface of the lower electrode 104, with the result that an anodic oxide film 104a is formed on the surface of the lower electrode 104. Further, the electrostatic chuck 107 is formed of an insulating material. It follows that it is impossible to monitor accurately the negative potential VDC even if the lead wire 110 is directly connected to the lower electrode 104.
In the conventional apparatus, however, it is unavoidable to connect the VDC monitor 112 to the power supply wire 109 via the RF filter 111, as described previously, though it is impossible in this case to monitor accurately the negative potential VDC. The value obtained by the VDC monitor 112 thus connected is used as the negative potential VDC on the semiconductor wafer 108. In this case, however, the expected result of the plasma processing cannot be obtained in some cases even if the frequency and output of the high frequency power supply 105 are controlled on the basis of the VDC level monitored by the VDC monitor 112 because an accurate VDC level cannot be obtained in the prior art as pointed out above.
In the conventional technique, the abnormal discharge occurring within the processing chamber is detected by measuring the negative potential VDC as described above. To be more specific, the abnormal discharge is detected by observing the negative potential VDC monitored by the VDC monitor 112 shown in FIG. 1.
Where the negative potential VDC with which the lower electrode 104 is biased is measured by the conventional method described above, it is certainly possible to detect with some accuracy the abnormal discharge within the processing chamber 102 on the basis of the fluctuation in the detected VDC level. However, the VDC value monitored by the VDC monitor 112 is not necessarily accurate as described previously. In addition, it is not reasonable to determine that the fluctuation in the detected VDC value has been caused without fail by the abnormal discharge occurring within the processing chamber 102. For example, it is possible for an abnormality occurring in the power supply system of the high frequency power supply 105 to have caused the fluctuation in the detected VDC value. What should also be noted is that, even if occurrence of an abnormal discharge has been detected, it is impossible to detect the specific position within the processing chamber 102 where the abnormal discharge has taken place.
The present invention has been achieved in view of the situation described above, and its object is to provide a plasma processing apparatus, which permits measuring the negative potential VDC (bias potential) accurately.
Let us describe some preferred embodiments of the present invention with reference to the accompanying drawings.
A monitor terminal 41 for detecting the negative potential VDC is mounted on the upper surface of the susceptor 7. As shown in FIG. 2, the monitor terminal 41 is interposed between the electrostatic chuck 8 and the focusing ring 18.
FIG. 3 shows in detail the construction of the monitor terminal 41 for detecting the negative potential VDC. As shown in FIG. 3, the monitor terminal 41 comprises an electrode body 42 formed of a conductive material having a high resistance to plasma, i.e., a material which is unlikely to be sputtered under a plasma atmosphere. For example, the electrode body 42 is formed of SiC or a refractory metal. The monitor terminal 41 also comprises an insulating member 43 formed of, for example, quartz. The electrode body 42 is inserted into a recess of the insulating member 43 such that the top portion of the electrode body 42 is positioned in the vicinity of the semiconductor wafer W electrostatically chucked by the electrostatic chuck 8. To be more specific, it is desirable for the top portion of the electrode body 42 to be positioned above the susceptor 7 and below the plasma sheath. Most desirably, the top surface of the electrode body 42 is flush with the treating surface (upper surface) of the semiconductor wafer W held on the electrostatic chuck 8. Where the electrode body 42 is arranged in this fashion, the negative potential VDC (bias potential) can be monitored more accurately, as described herein later.
A lead wire 44 is connected to the electrode body 42. As shown in FIG. 3, the lead wire 44, which is covered with an insulating film 45, extends through the susceptor 7, the susceptor supporting member 3 and the insulating plate 2 so as to be connected to a VDC monitor 46 positioned outside the processing chamber 1. The VDC level detected by the electrode body 42 is measured by the VDC monitor 46.
The VDC monitor 46 is connected to a controller 47 serving to control the output and frequency of the high frequency power supply 11. Based on the result of detection performed by the VDC monitor 46, the output and frequency of the high frequency power supply 11 are controlled by means of, for example, the feed back control.
A processing gas, e.g., a CF4 gas, is introduced from a processing gas supply device into the processing chamber 1 through the gas inlet port 24 and the gas spurting ports 23 formed in the upper electrode 21. At the same time, the pressure within the processing chamber 1 is maintained at, for example, 0.5 Torr. Then, a high frequency power of, for example, 1 kW having a frequency of, for example, 13.56 MHz is applied from the high frequency power supply 11 to the susceptor 7, with the result that plasma is generated within the processing chamber 1 and, thus, the dummy wafer is subjected to etching. In this step, the negative potential VDC on the dummy wafer is detected by the monitor terminal 41 and monitored by the VDC monitor 46, making it possible to know the VDC level caused by the generated plasma on the real time basis.
The output and frequency of the high frequency power supply 11 are controlled by the controller 47 based on the output signal generated from the VDC monitor 46 so as to change the VDC level and, thus, to achieve a desired plasma state. It follows that, where the shifting amount of VDC is set at a predetermined value, the damage, which is to be done to the members within the processing chamber of the apparatus, can be prevented in advance by, for example, lowering the output of the high frequency power source 11.
As described above, the VDC monitor terminal 41 is arranged in the vicinity of the semiconductor wafer W in the apparatus of the present invention, making it possible to detect the VDC level highly accurately, compared with the conventional monitoring method. Further, where the monitor terminal 41 is arranged such that the top surface of the electrode body 42 is flush with the treating surface of the dummy wafer, the VDC level monitored by the VDC monitor 46 can be regarded as substantially equal to the VDC level on the actual dummy wafer, making it possible to detect the VDC level more accurately.
In the embodiment described above, the VDC monitor terminal 41 is arranged on the susceptor 7 and positioned between the focusing ring 18 and the electrostatic chuck 8. However, it is not absolutely necessary to arrange the VDC monitor terminal in the particular position noted above. In other words, a reasonable effect can be obtained as far as the VDC monitor terminal is arranged in the vicinity of the semiconductor wafer W. It should also be noted that the electrode body 42 is inserted into the recess of the insulating member 43 interposed between the focusing ring 18 and the electrostatic chuck 8. Alternatively, it is also possible to insert the electrode body 42 into the focusing ring 18, as shown in FIG. 4.
Further, only one monitor terminal 41 is used in the embodiment described above. However, it is also possible to arrange a plurality of monitor terminals in the vicinity of the semiconductor wafer W, as shown in FIG. 5. In this case, the actual state of plasma such as a plasma inclination can be grasped more accurately based on the VDC level detected by each monitor terminal. If the members of the monitor terminal such as the electrode body are adjusted on the basis of the actual state of plasma thus grasped, the plasma can be made more uniform. In this case, it is desirable to arrange the monitor terminals to surround the semiconductor wafer substantially equidistantly in the circumferential direction or substantially equidistantly in respect of the distance between the monitor terminal and the periphery of the semiconductor wafer. What should also be noted is that the VDC level detected by the VDC monitor 46 is substantially equal to the actual VDC level of the object to be processed, e.g., the wafer W, as described previously, making it possible to control the VDC level accurately to meet the actual situation.
In the embodiment described above, the monitor terminal 41 is constructed such that the electrode body 42 is inserted into and fixed to a recess made in the insulating member 43. Alternatively, the electrode body 42 itself can be mounted movable in the vertical direction or can be mounted detachably. In this case, the top surface of the electrode body can be made flush with the treating surface of the object to be treated without difficulty, making it possible to detect highly accurately the VDC level regardless of the height of the processing surface of the object to be treated.
Let us describe a plasma processing apparatus according to a second embodiment of the present invention with reference to FIG. 6. As apparent from FIG. 6, the apparatus according to the second embodiment is substantially equal in its basic construction to the plasma processing apparatus of the first embodiment shown in FIG. 2. In the second embodiment shown in FIG. 6, however, what is monitored is the current flowing through the electrostatic chuck, not the negative potential VDC as in the first embodiment.
Let us describe a plasma processing apparatus according to a third embodiment of the present invention with reference to FIG. 7 showing a cross section of the apparatus. The apparatus shown in FIG. 7 is equal in its basic construction to the plasma processing apparatus according to the second embodiment of the present invention shown in FIG. 6, except that both the negative potential VDC and the current flowing through the electrostatic chuck are monitored in the apparatus shown in FIG. 7. To be more specific, a monitoring lead wire 61 is branched from the power supply wire 14 of the high frequency power supply 11, and a VDC monitor 63 is connected via an RF filter 62 to the monitoring lead wire 61. As shown in FIG. 7, both the output signal generated from the VDC monitor 63 and the output signal generated from the current monitor 52 are kept supplied to the abnormality detecting device 53. The abnormal discharge occurrence during the etching process is detected within the detecting device 53 based on the signals supplied from both the current monitor 52 and the VDC monitor 63 as described in detail herein later. The result of the detection is displayed on the display device 54.
Where an etching process is being carried out normally as desired, a normal signal is supplied from the abnormality detecting device 53 to the display device 54. However, in the event of an abnormality during the etching treatment that a discharge takes place in the gas inlet pipe 10 through which flows a helium gas or in the pusher pin 32 extending within the hole 31, the VDC level monitored by the VDC monitor 63 is greatly changed. In this case, a monitored signal conforming With the change in the monitored VDC level is supplied to the abnormality detecting device 53. On the other hand, no change takes place in the DC current for operating the electrostatic chuck 8, said DC current being monitored by the current monitor 52. Of course, no change takes place in the monitored signal monitored by the current monitor 52, too.
For example, where a discharge has taken place in the electrostatic chuck 8 during the etching process, a significant change takes place in each of the VDC level monitored by the VDC monitor 63 and the DC current monitored by the current monitor 53, said DC current serving to operate the electrostatic chuck 8. In this case, the abnormality detecting device 53 detects a discharge occurrence in the electrostatic chuck 8 on the basis of each of the monitored signals which have been significantly changed. Then, the detected signal is supplied from the abnormality detecting device 53 to the display device 54, with the result that a warning is displayed on the display device 54 to the effect that an abnormality has taken place in the electrostatic chuck 8. In this fashion, the operator is enabled to know the discharge occurrence in the electrostatic chuck 8.
The apparatus shown in FIG. 7 also permits detecting a deviation of the semiconductor wafer W disposed on the electrostatic chuck 8. Specifically, where the semiconductor wafer W is disposed on the location somewhat deviant from the predetermined location on the surface of the electrostatic chuck 8, a width of fluctuation in the monitored signal emitted from the current monitor 52 is relatively small even if a high DC current is supplied from the high DC power supply 17 to the electrostatic chuck 8. On the other hand, where a high frequency power for the plasma generation is applied under the deviated state of the semiconductor wafer W, the electrostatic chuck 8 is partly exposed directly to the plasma, leading to a significant change in the VDC level monitored by the VDC monitor 63. It follows that the abnormality detecting device 53 also permits detecting a deviation of the semiconductor wafer W, i.e., an object to be processed, based on each of the monitored signals. The detected signal is supplied from the abnormality detecting device 53 to the display device 54, with the result that a warning is displayed on the display device 53 to the effect that the semiconductor wafer W disposed on the electrostatic chuck is deviated from the desired location. Of course, the operator is enabled to know the abnormality relating to the location of the semiconductor wafer W.
In the embodiment described above, the abnormal discharge and the abnormal location of the semiconductor wafer W are detected on the basis of monitored signals from two systems quite differing from each other, i.e., the VDC level of the high frequency power system and the current level in the high DC current system for the electrostatic chuck. It follows that the result of the detection is highly reliable.
As described previously, the DC current supplied from the high DC power source 17 is monitored by the current monitor 52. On the other hand, the VDC level of the plasma based on the high frequency power source is monitored by the VDC monitor 63. What should also be noted is that the current monitor 52 and the VDC monitor 63 permit independently monitoring and controlling the systems noted above, making it possible to detect an abnormality inherent in each of these systems.
FIG. 8 shows an additional modification in which the negative potential VDC is detected by a VDC monitor terminal 41 arranged in the vicinity of the object to be treated and monitored by a VDC monitor 46 as in the first embodiment. In this modification, the abnormal discharge and the deviation of the object from a desired location on the surface of the electrostatic chuck can be detected more accurately than in the apparatus shown in FIG. 7.
On the other hand, a plurality of gas supply holes 80, which vertically extend through the electrostatic chuck 8, are connected to the gas inlet passageway 10 extending through the susceptor supporting plate 3 and the susceptor 7. For example, a helium gas stored in a gas supply source (not shown) is supplied by a pump 81 so as to fill each of the gas inlet passageway 10 and the gas supply holes 80 with the helium gas. Naturally, the helium gas acts as a heat transfer medium so as to cool the semiconductor wafer W disposed on the electrostatic chuck 8 to a predetermined temperature, e.g., about -50� to -100� C.
Current also flows through the lead wire 16 in the case where a potential difference is brought about between the conductive layer 15 and the semiconductor wafer W. Such a potential difference is brought about when the semiconductor wafer W is electrostatically chucked onto the electrostatic chuck 8, and when a RF power is supplied to the system. Such being the situation, the current value detected by the ammeter 74 after the power supply to the electrostatic chuck 8 to electrostatically hold the semiconductor wafer W is compared with a predetermined current value stored in advance in the controller 75. It is determined by the controller 75 that a deviation of the semiconductor wafer W has taken place in the case where the detected current value arrives at a level higher than a predetermined value 10 as shown in FIG. 11A or where a predetermined current value I1 continues to be maintained for a predetermined period of time T as shown in FIG. 11B. In this case, the controller 75 generates a control signal which permits opening the switches 71 and 72. Also, the controller 75 supplies a stop signal to the pump 81 when or before the particular control signal is supplied to the switches 71 and 72. It follows that the switches 71 and 72 are opened so as to stop supply of the high frequency power from the high frequency power supply 11 and to stop application of the high voltage from the DC high voltage power supply 17. At the same time, supply of the helium gas acting as a heat transfer medium is also stopped.
As shown in FIG. 12, the heater 37, which comprises a heat generator 38 and an insulator 38a covering the heat generator 38, is in the shape of a disc having a thickness of several millimeters. The heat generator 38 is formed of, for example, tungsten, carbon or an Fe--Cr--Al alloy. On the other hand, the insulator 38a, which is intended to electrically insulate the heat generator 38 from a substrate 39, is generally formed of a ceramic material. Particularly, it is desirable to use aluminum nitride (AlN) for forming the insulator 38a. It should be noted that AlN exhibits a heat conductivity about 10 times as high as that of the ceramic material used in the past, e.g., Al2 O3. In addition, AlN is excellent in its resistance to thermal shock and, thus, is unlikely to be broken even when exposed to a rapid change in temperatures. For example, Al2 O3 exhibits such a high thermal expansion coefficient as 7.3�10-6 /� C. in contrast to only 5�10-6 /� C. for AlN. Also, the tensile strength of Al2 O3 is as low as only 24 to 26 kgf/mm2 in contrast to 40 to 50 kgf/mm2 for AlN. What should also be noted is that AlN is an electric insulator and, thus, heat is transmitted via phonons. Further, AlN exhibits the peak value of heat conductivity at a temperature markedly lower than room temperature, as shown in FIG. 13. It follows that the heat conductivity of the insulator 38a formed of AlN is greater at the cryogenic temperature at which the susceptor 7 is maintained during the plasma treatment than at room temperature. What should also be noted is that the heat conductivity is increased in the low temperature region, as apparent from FIG. 13. In addition, the heat capacity (specific heat) of AlN is lowered with decrease in temperature. Because of the synergetic effect produced by these properties, AlN exhibits highly excellent characteristics when used as an electric insulator included in a heater. Further, AlN exhibits satisfactory properties as a heat soaking plate.
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arrayUS8809747Apr 13, 2012Aug 19, 2014Lam Research CorporationCurrent peak spreading schemes for multiplexed heated arrayUS8884194Dec 10, 2013Nov 11, 2014Lam Research CorporationHeating plate with planar heater zones for semiconductor processingUS20090250202 *Oct 17, 2006Oct 8, 2009Markus EiblHybrid ChuckUS20100213047 *Mar 19, 2010Aug 26, 2010Canon Anelva CorporationHigh-frequency sputtering deviceUS20110139370 *Feb 22, 2011Jun 16, 2011Hitachi High-Technologies CorporationPlasma processing apparatusUS20110139399 *Nov 24, 2010Jun 16, 2011Sumitomo Electric Industries, Ltd.Heater unit, heating and cooling device, and apparatus comprising sameUS20130045604 *Sep 19, 2011Feb 21, 2013Kenji MaedaPlasma processing apparatus and plasma processing methodWO1999048148A1 *Mar 17, 1999Sep 23, 1999Applied Materials IncMethod and apparatus for predicting failure of an electrostatic chuckWO1999053520A1 *Apr 2, 1999Oct 21, 1999Applied Materials IncMethod and apparatus for igniting a plasma in a plasma processing chamberWO2000019520A1 *Sep 15, 1999Apr 6, 2000Lam Res CorpMethods and apparatus for determining an etch endpoint in a plasma processing systemWO2001024581A1 *Sep 18, 2000Apr 5, 2001Wayne L JohnsonMulti-zone resistance heaterWO2003105199A1 *May 19, 2003Dec 18, 2003Sumitomo Electric Industries, Ltd.Heater module for semiconductor production systemWO2012103294A2 *Jan 26, 2012Aug 2, 2012Applied Materials, Inc.Substrate support with heater and rapid temperature change* Cited by examinerClassifications U.S. Classification118/723.00E, 118/728, 118/724, 118/725International ClassificationH01J37/32, C23C16/509Cooperative ClassificationH01J37/32082, C23C16/5096, H01J37/32174, H01J37/32935European ClassificationH01J37/32M8, H01J37/32M8J, H01J37/32S4, C23C16/509DLegal EventsDateCodeEventDescriptionFeb 4, 2009FPAYFee paymentYear of fee payment: 12Feb 9, 2005FPAYFee paymentYear of fee payment: 8Feb 6, 2001FPAYFee paymentYear of fee payment: 4RotateOriginal ImageGoogle Home - Sitemap - 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How do you test an Android application across multiple Activities? - Stack Overflow
40 We are building a complex Android application consisting of many screens and workflows spread across many Activities. Our workflows are similar to what you might see on a Bank's ATM machine, for example, there is an Activity to login in that transitions to a main menu Activity which can transition to other activities based on the user's choices.
android automated-tests integration-testing android-testing share|improve this question edited Apr 4 '12 at 15:53
asked Nov 18 '09 at 22:30
As of Android 4.1, there is now a new testing framework from Android which enables testing across activities and indeed the entire system: developer.android.com/tools/testing/testing_ui.html
Robotium will suit this need too and in only a couple of lines.
share|improve this answer answered Nov 28 '09 at 5:22
You might try adding the FlakyTest annotation to repeat the test automatically when timing issues cause it to fail. Not a solution, really, but a viable workaround in some situations.
Thanks for writing this up! I was looking for something with the functionality of ActivityMonitors for my testing. I just couldn't find them.
As far as I know, nothing you did above cannot be done using ActivityInstrumentationTestCase2
Feb 25 '14 at 3:29
any idea, on what condition, 'getInstrumentation().waitForIdleSync();' would get into infinite loop? In android 4.4.2_r2 running processor board, I'm facing this issue, while executing the CTS Test.
– ArunJTS
I think my son @pajato1 found and fixed your timing problem. His fix solved my problem. Here's what he said: "I just noticed in the javadoc that Instrumentation.startActivitySync() was blocking until the new Activity was ready and then returning it, so it seems like the Monitor wasn't necessary. Removing it proved this was correct. My theory is that Monitor was causing the Activity created by startActivitySync() to be restarted in some cases due to a race condition. I did spend some time reading the android source code, but nothing jumped out at me as the cause of the race condition."
Take a look at Robotium 'a open-source test framework created to make automatic black-box testing of Android applications significantly faster and easier than what is possible with Android instrumentation tests out-of-the-box.'
Homepage: http://www.robotium.org/
http://github.com/jayway/robotium
Please note that the Robotium project is maintained by the company I work for
share|improve this answer answered Jan 26 '10 at 21:31
3,04522240
hi, Is there a recorder tool for this ? i checked many websites and found testdroid which records the scripts and runs it. Unfortunately it is not a freeware, do you know any freeware which do the recording process ?
@thndrkiss: I don't know of any such tool. If you place a questions on the Robotium forum you are likely to get a better answer.
Robotium is a life saver. It will make your test extremely easy to write (you're basically talking to it in plain english: click on this, press back button, etc.) You can test anything but you are not required to know the tiny details. It has at least two major benefits: you can test apps you don't have the source code of, and it relies on the UI which make it very robust (you change your controllers / models much more than your views...)
You could always use Robotium. It supports blackbox testing just like Selenium but for Android. You will find it at Robotium.org
share|improve this answer answered Jan 21 '10 at 20:30
1,71511016
Last time I checked Robotium could not be used across Activities. Has that been fixed now ? stackoverflow.com/questions/3840034/…
It has always worked across Activities as long as they belong to the same process.
First of all, use 'ActivityInstrumentationTestCase2', not 'InstrumentationTestCase', as your base class. I use Robotium and routinely test across multiple Activities. I found that I have to specify the login activity as the generic type (and class argument to the constructor).
The 'ActivityInstrumentationTestCase2' constructor ignores the package argument and does not require it. The constructor that takes the package is deprecated.
"ActivityInstrumentationTestCase2(String pkg, Class activityClass)
This constructor is deprecated. use ActivityInstrumentationTestCase2(Class) instead"
Using the recommended base class allows the framework to handle certain boilerplate, like starting your activity. That's done by the call to 'getActivity()', if necessary.
I'm surprised no one has mentioned some of the leading automated functional testing tools. Compared with Robotium, these don't require writing Java code.
MonkeyTalk: an open-source tool backed by the company Gorilla Logic. Pros: provides recording as well as a higher-level scripting language easier for non-technical users, and is cross-platform (includes iOS). Given those benefits as requirements, we've found this to be the best solution. It also allows customization beyond what can be done in their scripting language using Javascript. Calabash-Android: an open-source tool for Cucumber-style features. Pros: write features in the Gherkin language which is Business Readable, Domain Specific Language that lets you describe software’s behavior without detailing how that behavior is implemented. Similar but not exact support is available for iOS in cucumber-ios. Recording capabilities are not as good, as they produce a binary output.
Here are some additional comparisons between Robotium,
Monkeytalk and Calabash. It mentions TestDroid as another
possibility. This blog mentions the above plus NativeDriver and Bot-bot. share|improve this answer edited Jan 28 '13 at 19:50
1,9681727
I created a record-and-playback tool for Android and made it available on GitHub. It's easy to configure and use, requires no programming, runs against real devices (which do not have to be rooted) and automatically saves screenshots as it plays tests.
share|improve this answer edited Mar 13 '12 at 19:07
This looks promising. For those who don't see the point: this seems to be a pretty good solution to test gestures (tapping, dragging and other things)
you can do it like this to avoid the flake waiting times out of sync :
final Button btnLogin = (Button) getActivity().findViewById(R.id.button);
// Register we are interested in the authentication activity...
Instrumentation.ActivityMonitor aMonitor =       instrumentation.addMonitor(mynextActivity.class.getName(), null, false);
btnLogin.performClick();
assertTrue(getInstrumentation().checkMonitorHit(aMonitor, 1)); //check if we got at least one hit on the new activity
share|improve this answer edited Mar 12 '14 at 14:23
answered Nov 25 '12 at 17:10
Found this useful with a couple of modifications.
Firstly getInstrumentation().waitForIdleSync() will cure the flakiness SingleShot speaks of
and also InstrumentationTestCase has a lauchActivity function that can replace the start activity lines.
share|improve this answer edited Jul 3 '14 at 17:12
I'm working on pretty much the same thing, and I'll probably go with a variation on the accepted answer to this question, but I did come across Calculuon (gitHub) during my searches for a solution.
I haven't personally used it, but ApplicationTestCase looks like it might be what you're looking for.
1,74341520
Unfortunately there are no examples indicating that to be the case.
Nov 20 '09 at 7:20
Yea, looks like you're right...was tricked by the name. I can't figure this one out. Best approach I've got so far is to use positron's ActivityUnitTestCase to verify that the next activity is started, but that doesn't help you build coherent stories. Alternatively, InstrumentationTestCase.launchActivity might allow you to start an arbitrary number of activities, but I'm still trying to figure out the Instrumentation stuff.
Nov 21 '09 at 1:11
Will accepted approach work with different Activities from different Applications, signed by different certificates? If not, Robotium the best way to test activities within same application.
There is another way to do the multiple activity using ActivityInstrumentation Class..
Its a normal automation scenario...
First get the focus of what ever object you want and then send a key Simple as that
sample code button.requestFocus();
sendKeys(KeyEvent.KEYCODE_ENTER);
Only thing is understanding the every API calls will help us.
answered Dec 8 '09 at 6:06
This answer is based on the accepted answer but modified to solve the timing issue which for me became consistent after adding about a half dozen tests. @pajato1 gets the credit for solving the timing issue, as cited in the accepted answer comments.
* Creates a test Activity for a given fully qualified test class name.
* @param fullyQualifiedClassName The fully qualified name of test activity class.
* @return The test activity object or null if it could not be located.
protected AbstractTestActivity getTestActivity(final String fullyQualifiedClassName) {
AbstractTestActivity result = null;
// Register our interest in the given activity and start it.
Log.d(TAG, String.format("Running test (%s) with main class: %s.", getName(), fullyQualifiedClassName));
intent.setClassName(instrumentation.getTargetContext(), fullyQualifiedClassName);
// Wait for the activity to finish starting
Activity activity = instrumentation.startActivitySync(intent);
// Perform basic sanity checks.
assertTrue("The activity is null!  Aborting.", activity != null);
String format = "The test activity is of the wrong type (%s).";
assertTrue(String.format(format, activity.getClass().getName()), activity.getClass().getName().equals(fullyQualifiedClassName));
result = (AbstractTestActivity) activity;
1,85221223
add a comment | protected by Hans Olsson Apr 10 '11 at 10:16
Not the answer you're looking for?	Browse other questions tagged android automated-tests integration-testing android-testing or ask your own question.	asked
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text:
Words containing ecernenti | Words that contain ecernenti
Words containing ecernenti | Words that contain ecernenti http://www.thefreedictionary.com/words-containing-ecernentiPrinter Friendly
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Found 1 words containing ecernenti. Browse our Scrabble Word Finder, Words With Friends cheat dictionary, and WordHub word solver to find words that contain ecernenti. Or use our Unscramble word solver to find your best possible play!
11 letter words containing ecernentiSee also11 letter words containing ecernentisecernentiaSee also:2-letter words with QWords with the letter xWords that start with sWords that end in qWords that start with hWords that end in zWords containing ecernentWords containing ecernentia

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Words that end in chnines | Words ending in chnines
Words that end in chnines | Words ending in chnines http://www.thefreedictionary.com/words-that-end-in-chninesPrinter Friendly
9,763,593,797 visitors served
Found 1 words that end in chnines. Browse our Scrabble Word Finder, Words With Friends cheat dictionary, and WordHub word solver to find words that end with chnines. Or use our Unscramble word solver to find your best possible play! Related: Words containing chnines
11-letter words that end in chninesSee also11-letter words that end in chninesstrychninesSee also:Words with all vowelsWords that end in iWords that start with bWords that start with mWords that start with vWords that start with xWords that end in hninesWords that end in ychnines


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Car Rental Paterson: Get Cheap Rental Car Deals Now | Expedia
Top Cars Deals in Paterson
Last year, excursions to Paterson were a popular activity. In fact, Paterson is so nice that scores of people call it home. When you land in Paterson, you'll have your eye on new excursions and a thrilling itinerary in hand. And you might want to use public transport to get around after you check into your hotel. And yes, you could hop into a yellow cab at the airport curb. Plus, you might find getting aroundthe heart of the city is a job for your tennis shoes. We say you should bid farewell to memorizing the public transit schedule and howdy to the liberty of miles of pavement at your disposal. Having keys to a private vehicle unleashes the full potential of your getaway. When you're behind the wheel, you can visit all the attractions in Paterson on your desired timetable.
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If you're in the market for a great deal on car rentals in Paterson, Expedia has a selection of cars to suit any traveler. Our fleet includes cars and trucks for everyone from solo travelers to huge groups. Browse our inventory for a smaller car to make sure parking is easy, or turn the keys in a bigger car that has room for plenty of shopping bags in the back. When you book Paterson rental cars on Expedia, you can elect from:
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New Books Waterstones | eBay Please enable JavaScript Our new search experience requires JavaScript to be enabled. Please enable JavaScript on your browser, then try again.
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LSU concerned about Marshall, Astros - Lsu - Scout
LSU concerned about Marshall, AstrosHunter Paniagua07/11/2014LSU has "legitimate concern" when it comes to losing prized signee Mac Marshall to the Astros amidst recent developments with Houston's No. 1 overall draft pick.One week remains until the deadline for MLB Draft picks to sign with their respective clubs, and these final seven days may be a bit more stressful than LSU originally anticipated.
As recently as last week, the Tigers were extremely optimistic they’d retain 11 of their 12 high school signees (Bobby Bradley reached a deal with the Cleveland Indians shortly after being picked). But some new developments with the Houston Astros’ first overall selection have led to some “legitimate concerns” regarding the Tigers’ prized signee Mac Marshall, according to a source on the LSU side.
Houston selected Marshall in the 21st round, though at the time, LSU had little reason to believe they’d lose him. Marshall had told the staff he’d only consider going pro if he was taken in the first two rounds, and he was already in Baton Rouge by the time the Astros drafted him.
Houston has maintained consistent contact with both Marshall and his advisor throughout the summer, but our source was unable to provide an update on those talks from the last few days.
DISCUSS: Will LSU keep Marshall?
As of Friday, two of the Astros’ picks from the first 10 rounds remain unsigned — No. 1 overall pick Brady Aiken and fifth-round pick Jacob Nix. Shortly after the Astros selected Aiken with the first overall pick, reports surfaced the two sides had reached an agreement for $6.5 million, about $1.4 million below the slot value of $7,922,100. Aiken and his family traveled to Houston two weeks ago, supposedly to finalize the contract, but the group left two days later without a deal in place.
That’s because a physical discovered a ligament problem with Aiken’s throwing elbow. Now reports indicate the Astros are trying to offer Aiken a deal worth $5 million, almost $3 million below the slot value, which would free up a significant amount in the Astros’ draft pool should the two sides agree.
Now some of that extra money would have to go to Nix, a UCLA signee. Reports indicated Houston and Nix had agreed to a bonus of $1.5 million, a deal much larger than his pick’s slot value of $370,500. But even if the two sides stick with that figure, the Astros would still have more than $1 million left over to make a run at Marshall.
So that leaves a lot to be decided in the final seven days before the deadline, and it all revolves around what happens with Aiken. The best-case scenario from the LSU perspective would be for Aiken not to sign, but that would be unprecedented in the modern draft era. Not since 1971 has an MLB club failed to sign the No. 1 overall pick, a much different time in terms of how the draft was structured.
But if the Astros do not sign Aiken, they would forfeit the full amount of his draft slot — $7.9 million. Not only would that prevent them from making a serious run at Marshall, but it would likely mean them losing Nix as well. LSU does expect the Astros to eventually reach a deal with Aiken though, and the value of which will ultimately decide how much Houston can offer Marshall. The hard-throwing southpaw turned down significant offers from clubs early in the draft, giving LSU the impression it will take serious money to lure him away from Baton Rouge at this point. Marshall has been on campus since June for summer classes, but that won’t scare away the Astros from making a run at him.
This should make for an interesting and stressful week as LSU tries to cling on to its highly touted 2014 signing class. Marshall has a real chance of making the weekend rotation as a freshman, and losing him this late in the process would be a tough blow for the Tigers. So keep a close eye on what happens between Aiken and the Astros, as that will have a direct effect on LSU’s chances of keeping its top signee. Share on Facebook Share on TwitterTrending on ScoutLes Miles sounds off on Dan Patrick ShowEd Orgeron pushing the right buttons with LSUIs the U.S. Military the Most Powerful?WATCH: Former LSU Tiger Deion Jones pick-sixWATCH: Ed Orgeron and players meet with mediaShare & EmbedWATCH: Ed Orgeron and players meet with media Full StoryTiger Blitz Top StoriesEd Orgeron pushing the right buttons with LSULSU opened practice for the media for the first time in-season in years as interim coach Ed Orgeron took over. The team conducted a 30-minute, high-energy walk thru and Tiger Blitz…by Billy EmbodyTiger BlitzYesterday at 8:20 AMWATCH: Ed Orgeron and players meet with mediaLSU interim coach Ed Orgeron and some of the Tigers talked with the media on Monday. Watch them here!by Billy EmbodyTiger BlitzMonday at 4:24 PMPlayers talk about "energy jolt" with OrgeronLSU interim coach Ed Orgeron touched on the energy level of the team going up under his direction. Monday afternoon, his players echoed that.by Billy EmbodyTiger BlitzMonday at 1:51 PMKey Takeaways from Lunch with Coach OLSU introduced Ed Orgeron as its interim head football coach on Monday and Tiger Blitz has three key takeaways from his first press conference.by Billy EmbodyTiger BlitzMonday at 11:20 AMJoin Tiger Blitz with our 4-for-1 deal!Join Tiger Blitz by taking advantage of our four months for the price of one deal. Get the latest on LSU's coaching search, recruits' reactions and team coverage as LSU hits the…by Billy EmbodyTiger BlitzSunday at 6:04 PMWhat we're hearing on LSU's coaching searchLSU has already made overtures to potential coaches and Tiger Blitz has the latest.by Billy EmbodyTiger BlitzSunday at 2:28 PMWATCH: Former LSU Tiger Deion Jones pick-sixWatch former LSU Tiger and New Orleans native Deion Jones run a pick-six back against Drew Brees and the Saints to put the Falcons up 45-25 in the fourth quarter.by Billy EmbodyTiger BlitzMonday at 7:57 PMHarbaugh Hoping to Speak With Miles SoonMichigan coach Jim Harbaugh gave his thoughts on the firing of Les Miles at LSU.by Kyle BogenschutzThe Michigan InsiderMonday at 12:46 PMWho leads for Scout 100 linebacker?Before Les Miles was let go by LSU Sunday, Scout 100 linebacker Chris Allen had the Tigers on top. What does his leaderboard look like now?by Chad SimmonsScout FootballMonday at 12:39 PMUpdated Scout 300 Trend Meter For 2017The updated Scout 300 Trend Meter for the 2017 class takes a look at which schools are trending for each uncommitted member in the Scout 300.by StaffScout FootballMonday at 11:15 AMLes Miles sounds off on Dan Patrick ShowLes Miles joined the Dan Patrick Show to talk about his tenure at LSU and the decision by LSU to fire him.by Billy EmbodyTiger BlitzMonday at 7:57 AMBreaking NewsLes Miles, Cam Cameron fired at LSULSU has informed head coach Les Miles and offensive coordinator Cam Cameron that they've been let go. Ed Orgeron will take serve as interim coach.by Billy EmbodyTiger BlitzSunday at 1:46 PMLoad More

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Aural Knowledge Steve Dalachinsky Excerpt : Steve Dalachinsky : Free Download, Borrow, and Streaming : Internet Archive
Aural Knowledge Steve Dalachinsky Excerpt
[archiveorg AuralKnowledgeSteveDalachinskyExcpt width=560 height=384 frameborder=0 webkitallowfullscreen=true mozallowfullscreen=true]
Topics aural knowledge, NYC, Steve Dalachinsky, Keiko Uenishi, hearing, listening, gentrification
Excerpt of voice recording of Steve Dalachinsky (for project by Keiko Uenishi: Knowing/Relearning neighbor/hood(s) through hearing/sounds)
Identifier AuralKnowledgeSteveDalachinskyExcpt
Uploaded by o.blaat on February 29, 2016

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